Patents by Inventor Robert Gruenberger
Robert Gruenberger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11505450Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.Type: GrantFiled: October 21, 2020Date of Patent: November 22, 2022Assignee: Infineon Technologies AGInventors: Florian Brandl, Christian Geissler, Robert Gruenberger, Claus Waechter, Bernhard Winkler
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Patent number: 11247895Abstract: A semiconductor device includes a first region; a second region that is peripheral to the first region; a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed in the first region at the first surface of the substrate; a back end of line (BEOL) stack disposed on the first surface of the semiconductor chip that extends laterally from the MEMS element, in the first region, into the second region; a first cavity formed in the BEOL stack that exposes the sensitive area of the stress-sensitive sensor, wherein the first cavity extends entirely through the BEOL stack over the first region thereby exposing a sensitive area of the stress-sensitive sensor; and at least one stress-decoupling trench laterally spaced from the stress-sensitive sensor and laterally spaced from the first cavity with a portion of the BEOL stack interposed between.Type: GrantFiled: July 15, 2020Date of Patent: February 15, 2022Inventors: Florian Brandl, Robert Gruenberger, Wolfram Langheinrich
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Publication number: 20210032097Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.Type: ApplicationFiled: October 21, 2020Publication date: February 4, 2021Applicant: Infineon Technologies AGInventors: Florian BRANDL, Christian GEISSLER, Robert GRUENBERGER, Claus WAECHTER, Bernhard WINKLER
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Patent number: 10899604Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.Type: GrantFiled: April 18, 2019Date of Patent: January 26, 2021Inventors: Florian Brandl, Christian Geissler, Robert Gruenberger, Claus Waechter, Bernhard Winkler
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Patent number: 10843916Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; at least one stress-decoupling trench that extends from the first surface into the substrate, where the at least one stress-decoupling trench extends partially into the substrate towards the second surface although not completely to the second surface; a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate and laterally spaced from the at least one stress-decoupling trench; and a stress-decoupling material that fills the at least one stress-decoupling trench and covers the sensitive area of the MEMS element.Type: GrantFiled: March 4, 2019Date of Patent: November 24, 2020Inventors: Dirk Meinhold, Florian Brandl, Robert Gruenberger, Wolfram Langheinrich, Sebastian Luber, Roland Meier, Bernhard Winkler
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Publication number: 20200346922Abstract: A semiconductor device includes a first region; a second region that is peripheral to the first region; a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed in the first region at the first surface of the substrate; a back end of line (BEOL) stack disposed on the first surface of the semiconductor chip that extends laterally from the MEMS element, in the first region, into the second region; a first cavity formed in the BEOL stack that exposes the sensitive area of the stress-sensitive sensor, wherein the first cavity extends entirely through the BEOL stack over the first region thereby exposing a sensitive area of the stress-sensitive sensor; and at least one stress-decoupling trench laterally spaced from the stress-sensitive sensor and laterally spaced from the first cavity with a portion of the BEOL stack interposed between.Type: ApplicationFiled: July 15, 2020Publication date: November 5, 2020Applicant: Infineon Technologies AGInventors: Florian BRANDL, Robert GRUENBERGER, Wolfram LANGHEINRICH
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Publication number: 20200331748Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.Type: ApplicationFiled: April 18, 2019Publication date: October 22, 2020Applicant: Infineon Technologies AGInventors: Florian BRANDL, Christian GEISSLER, Robert GRUENBERGER, Claus WAECHTER, Bernhard WINKLER
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Patent number: 10807862Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, wherein the stress-sensitive sensor is sensitive to mechanical stress; a first pair of adjacent stress-decoupling trenches arranged laterally from a first lateral side of the stress-sensitive sensor, where each stress-decoupling trench of the first pair of adjacent stress-decoupling trenches extends partially from the first surface into the substrate towards the second surface although not completely to the second surface; and a first spring structure formed between the first pair of adjacent stress-decoupling trenches such that the first spring structure is arranged laterally from the stress-sensitive sensor and is configured to absorb external stress from an environment.Type: GrantFiled: April 3, 2019Date of Patent: October 20, 2020Assignee: Infineon Technologies AGInventors: Florian Brandl, Robert Gruenberger, Wolfram Langheinrich
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Publication number: 20200317508Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, wherein the stress-sensitive sensor is sensitive to mechanical stress; a first pair of adjacent stress-decoupling trenches arranged laterally from a first lateral side of the stress-sensitive sensor, where each stress-decoupling trench of the first pair of adjacent stress-decoupling trenches extends partially from the first surface into the substrate towards the second surface although not completely to the second surface; and a first spring structure formed between the first pair of adjacent stress-decoupling trenches such that the first spring structure is arranged laterally from the stress-sensitive sensor and is configured to absorb external stress from an environment.Type: ApplicationFiled: April 3, 2019Publication date: October 8, 2020Applicant: Infineon Technologies AGInventors: Florian BRANDL, Robert GRUENBERGER, Wolfram LANGHEINRICH
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Publication number: 20200283286Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; at least one stress-decoupling trench that extends from the first surface into the substrate, where the at least one stress-decoupling trench extends partially into the substrate towards the second surface although not completely to the second surface; a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate and laterally spaced from the at least one stress-decoupling trench; and a stress-decoupling material that fills the at least one stress-decoupling trench and covers the sensitive area of the MEMS element.Type: ApplicationFiled: March 4, 2019Publication date: September 10, 2020Applicant: Infineon Technologies AGInventors: Dirk MEINHOLD, Florian BRANDL, Robert GRUENBERGER, Wolfram LANGHEINRICH, Sebastian LUBER, Roland MEIER, Bernhard WINKLER
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Patent number: 9013890Abstract: In one embodiment, a semiconductor package includes an isolating container having a recess, which forms an inner membrane portion and an outer rim portion. The rim portion is thicker than the membrane portion. The package includes a semiconductor chip disposed in the recess and a backplane disposed under the membrane portion of the isolating container.Type: GrantFiled: January 11, 2012Date of Patent: April 21, 2015Assignee: Infineon Technologies AGInventors: Udo Ausserlechner, Carsten von Koblinski, Sigrid Wabnig, Volker Strutz, Robert Grünberger
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Patent number: 8993394Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.Type: GrantFiled: November 26, 2012Date of Patent: March 31, 2015Assignee: Infineon Technologies AGInventors: Karlheinz Mueller, Robert Gruenberger, Bernhard Winkler
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Publication number: 20130330870Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.Type: ApplicationFiled: November 26, 2012Publication date: December 12, 2013Applicant: INFINEON TECHNOLOGIES AGInventors: Karlheinz Mueller, Robert GRUENBERGER, WINKLER Bernhard
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Patent number: 8318581Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.Type: GrantFiled: November 18, 2011Date of Patent: November 27, 2012Assignee: Infineon Technologies AGInventors: Karl-Heinz Mueller, Bernhard Winkler, Robert Gruenberger
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Publication number: 20120112365Abstract: In one embodiment, a semiconductor package includes an isolating container having a recess, which forms an inner membrane portion and an outer rim portion. The rim portion is thicker than the membrane portion. The package includes a semiconductor chip disposed in the recess and a backplane disposed under the membrane portion of the isolating container.Type: ApplicationFiled: January 11, 2012Publication date: May 10, 2012Applicant: Infineon Technologies AGInventors: Udo Ausserlechner, Carsten von Koblinski, Sigrid Wabnig, Volker Strutz, Robert Grünberger
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Publication number: 20120061734Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.Type: ApplicationFiled: November 18, 2011Publication date: March 15, 2012Applicant: Infineon Technologies AGInventors: Karl-Heinz Mueller, Bernhard Winkler, Robert Gruenberger
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Patent number: 8125046Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.Type: GrantFiled: June 4, 2008Date of Patent: February 28, 2012Assignee: Infineon Technologies AGInventors: Karl-Heinz Mueller, Bernhard Winkler, Robert Gruenberger
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Patent number: 7889030Abstract: The invention relates to MEMS devices. In one embodiment, a micro-electromechanical system (MEMS) device comprises a resonator element comprising a semiconducting material, and at least one trench formed in the resonator element and filled with a material comprising oxide. Further embodiments comprise additional devices, systems and methods.Type: GrantFiled: August 7, 2008Date of Patent: February 15, 2011Assignee: Infineon Technologies AGInventors: Florian Schoen, Robert Gruenberger, Mohsin Nawaz, Bernhard Winkler
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Publication number: 20100032789Abstract: The invention relates to MEMS devices. In one embodiment, a micro-electromechanical system (MEMS) device comprises a resonator element comprising a semiconducting material, and at least one trench formed in the resonator element and filled with a material comprising oxide. Further embodiments comprise additional devices, systems and methods.Type: ApplicationFiled: August 7, 2008Publication date: February 11, 2010Applicant: INFINEON TECHNOLOGIES AGInventors: Florian Schoen, Robert Gruenberger, Mohsin Nawaz, Bernhard Winkler
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Publication number: 20090302415Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.Type: ApplicationFiled: June 4, 2008Publication date: December 10, 2009Inventors: Karl-Heinz Mueller, Bernhard Winkler, Robert Gruenberger