Patents by Inventor Robert Gruenberger

Robert Gruenberger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11505450
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.
    Type: Grant
    Filed: October 21, 2020
    Date of Patent: November 22, 2022
    Assignee: Infineon Technologies AG
    Inventors: Florian Brandl, Christian Geissler, Robert Gruenberger, Claus Waechter, Bernhard Winkler
  • Patent number: 11247895
    Abstract: A semiconductor device includes a first region; a second region that is peripheral to the first region; a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed in the first region at the first surface of the substrate; a back end of line (BEOL) stack disposed on the first surface of the semiconductor chip that extends laterally from the MEMS element, in the first region, into the second region; a first cavity formed in the BEOL stack that exposes the sensitive area of the stress-sensitive sensor, wherein the first cavity extends entirely through the BEOL stack over the first region thereby exposing a sensitive area of the stress-sensitive sensor; and at least one stress-decoupling trench laterally spaced from the stress-sensitive sensor and laterally spaced from the first cavity with a portion of the BEOL stack interposed between.
    Type: Grant
    Filed: July 15, 2020
    Date of Patent: February 15, 2022
    Inventors: Florian Brandl, Robert Gruenberger, Wolfram Langheinrich
  • Publication number: 20210032097
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.
    Type: Application
    Filed: October 21, 2020
    Publication date: February 4, 2021
    Applicant: Infineon Technologies AG
    Inventors: Florian BRANDL, Christian GEISSLER, Robert GRUENBERGER, Claus WAECHTER, Bernhard WINKLER
  • Patent number: 10899604
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: January 26, 2021
    Inventors: Florian Brandl, Christian Geissler, Robert Gruenberger, Claus Waechter, Bernhard Winkler
  • Patent number: 10843916
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; at least one stress-decoupling trench that extends from the first surface into the substrate, where the at least one stress-decoupling trench extends partially into the substrate towards the second surface although not completely to the second surface; a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate and laterally spaced from the at least one stress-decoupling trench; and a stress-decoupling material that fills the at least one stress-decoupling trench and covers the sensitive area of the MEMS element.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: November 24, 2020
    Inventors: Dirk Meinhold, Florian Brandl, Robert Gruenberger, Wolfram Langheinrich, Sebastian Luber, Roland Meier, Bernhard Winkler
  • Publication number: 20200346922
    Abstract: A semiconductor device includes a first region; a second region that is peripheral to the first region; a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed in the first region at the first surface of the substrate; a back end of line (BEOL) stack disposed on the first surface of the semiconductor chip that extends laterally from the MEMS element, in the first region, into the second region; a first cavity formed in the BEOL stack that exposes the sensitive area of the stress-sensitive sensor, wherein the first cavity extends entirely through the BEOL stack over the first region thereby exposing a sensitive area of the stress-sensitive sensor; and at least one stress-decoupling trench laterally spaced from the stress-sensitive sensor and laterally spaced from the first cavity with a portion of the BEOL stack interposed between.
    Type: Application
    Filed: July 15, 2020
    Publication date: November 5, 2020
    Applicant: Infineon Technologies AG
    Inventors: Florian BRANDL, Robert GRUENBERGER, Wolfram LANGHEINRICH
  • Publication number: 20200331748
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.
    Type: Application
    Filed: April 18, 2019
    Publication date: October 22, 2020
    Applicant: Infineon Technologies AG
    Inventors: Florian BRANDL, Christian GEISSLER, Robert GRUENBERGER, Claus WAECHTER, Bernhard WINKLER
  • Patent number: 10807862
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, wherein the stress-sensitive sensor is sensitive to mechanical stress; a first pair of adjacent stress-decoupling trenches arranged laterally from a first lateral side of the stress-sensitive sensor, where each stress-decoupling trench of the first pair of adjacent stress-decoupling trenches extends partially from the first surface into the substrate towards the second surface although not completely to the second surface; and a first spring structure formed between the first pair of adjacent stress-decoupling trenches such that the first spring structure is arranged laterally from the stress-sensitive sensor and is configured to absorb external stress from an environment.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: October 20, 2020
    Assignee: Infineon Technologies AG
    Inventors: Florian Brandl, Robert Gruenberger, Wolfram Langheinrich
  • Publication number: 20200317508
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, wherein the stress-sensitive sensor is sensitive to mechanical stress; a first pair of adjacent stress-decoupling trenches arranged laterally from a first lateral side of the stress-sensitive sensor, where each stress-decoupling trench of the first pair of adjacent stress-decoupling trenches extends partially from the first surface into the substrate towards the second surface although not completely to the second surface; and a first spring structure formed between the first pair of adjacent stress-decoupling trenches such that the first spring structure is arranged laterally from the stress-sensitive sensor and is configured to absorb external stress from an environment.
    Type: Application
    Filed: April 3, 2019
    Publication date: October 8, 2020
    Applicant: Infineon Technologies AG
    Inventors: Florian BRANDL, Robert GRUENBERGER, Wolfram LANGHEINRICH
  • Publication number: 20200283286
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; at least one stress-decoupling trench that extends from the first surface into the substrate, where the at least one stress-decoupling trench extends partially into the substrate towards the second surface although not completely to the second surface; a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate and laterally spaced from the at least one stress-decoupling trench; and a stress-decoupling material that fills the at least one stress-decoupling trench and covers the sensitive area of the MEMS element.
    Type: Application
    Filed: March 4, 2019
    Publication date: September 10, 2020
    Applicant: Infineon Technologies AG
    Inventors: Dirk MEINHOLD, Florian BRANDL, Robert GRUENBERGER, Wolfram LANGHEINRICH, Sebastian LUBER, Roland MEIER, Bernhard WINKLER
  • Patent number: 9013890
    Abstract: In one embodiment, a semiconductor package includes an isolating container having a recess, which forms an inner membrane portion and an outer rim portion. The rim portion is thicker than the membrane portion. The package includes a semiconductor chip disposed in the recess and a backplane disposed under the membrane portion of the isolating container.
    Type: Grant
    Filed: January 11, 2012
    Date of Patent: April 21, 2015
    Assignee: Infineon Technologies AG
    Inventors: Udo Ausserlechner, Carsten von Koblinski, Sigrid Wabnig, Volker Strutz, Robert Grünberger
  • Patent number: 8993394
    Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.
    Type: Grant
    Filed: November 26, 2012
    Date of Patent: March 31, 2015
    Assignee: Infineon Technologies AG
    Inventors: Karlheinz Mueller, Robert Gruenberger, Bernhard Winkler
  • Publication number: 20130330870
    Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.
    Type: Application
    Filed: November 26, 2012
    Publication date: December 12, 2013
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Karlheinz Mueller, Robert GRUENBERGER, WINKLER Bernhard
  • Patent number: 8318581
    Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.
    Type: Grant
    Filed: November 18, 2011
    Date of Patent: November 27, 2012
    Assignee: Infineon Technologies AG
    Inventors: Karl-Heinz Mueller, Bernhard Winkler, Robert Gruenberger
  • Publication number: 20120112365
    Abstract: In one embodiment, a semiconductor package includes an isolating container having a recess, which forms an inner membrane portion and an outer rim portion. The rim portion is thicker than the membrane portion. The package includes a semiconductor chip disposed in the recess and a backplane disposed under the membrane portion of the isolating container.
    Type: Application
    Filed: January 11, 2012
    Publication date: May 10, 2012
    Applicant: Infineon Technologies AG
    Inventors: Udo Ausserlechner, Carsten von Koblinski, Sigrid Wabnig, Volker Strutz, Robert Grünberger
  • Publication number: 20120061734
    Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.
    Type: Application
    Filed: November 18, 2011
    Publication date: March 15, 2012
    Applicant: Infineon Technologies AG
    Inventors: Karl-Heinz Mueller, Bernhard Winkler, Robert Gruenberger
  • Patent number: 8125046
    Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.
    Type: Grant
    Filed: June 4, 2008
    Date of Patent: February 28, 2012
    Assignee: Infineon Technologies AG
    Inventors: Karl-Heinz Mueller, Bernhard Winkler, Robert Gruenberger
  • Patent number: 7889030
    Abstract: The invention relates to MEMS devices. In one embodiment, a micro-electromechanical system (MEMS) device comprises a resonator element comprising a semiconducting material, and at least one trench formed in the resonator element and filled with a material comprising oxide. Further embodiments comprise additional devices, systems and methods.
    Type: Grant
    Filed: August 7, 2008
    Date of Patent: February 15, 2011
    Assignee: Infineon Technologies AG
    Inventors: Florian Schoen, Robert Gruenberger, Mohsin Nawaz, Bernhard Winkler
  • Publication number: 20100032789
    Abstract: The invention relates to MEMS devices. In one embodiment, a micro-electromechanical system (MEMS) device comprises a resonator element comprising a semiconducting material, and at least one trench formed in the resonator element and filled with a material comprising oxide. Further embodiments comprise additional devices, systems and methods.
    Type: Application
    Filed: August 7, 2008
    Publication date: February 11, 2010
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Florian Schoen, Robert Gruenberger, Mohsin Nawaz, Bernhard Winkler
  • Publication number: 20090302415
    Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.
    Type: Application
    Filed: June 4, 2008
    Publication date: December 10, 2009
    Inventors: Karl-Heinz Mueller, Bernhard Winkler, Robert Gruenberger