Patents by Inventor Robert Haase

Robert Haase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10236352
    Abstract: A method for manufacturing a semiconductor device includes: providing a semiconductor substrate having a first side; forming a trench in the semiconductor substrate, the trench having a bottom and a sidewall extending from the bottom to the first side of the semiconductor substrate; forming an insulation structure including at least a first insulation layer and a second insulation layer on the sidewall and the bottom of the trench; forming a lower conductive structure in the lower portion of the trench; removing the second insulation layer in an upper portion of the trench while leaving the second insulation layer at least partially in a lower portion of the trench; and forming an upper conductive structure in the upper portion of the trench.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: March 19, 2019
    Assignee: Infineon Technologies Austria AG
    Inventors: Robert Haase, Martin Vielemeyer
  • Publication number: 20190035915
    Abstract: Disclosed is a transistor device. The transistor device includes: in a semiconductor body, a drift region, a body region adjoining the drift region, and a source region separated from the drift region by the body region; a gate electrode dielectrically insulated from the body region by a gate dielectric; a source electrode electrically connected to the source region; at least one field electrode dielectrically insulated from the drift region by a field electrode dielectric; and a rectifier element coupled between the source electrode and the field electrode. The field electrode and the field electrode dielectric are arranged in a first trench that extends from a first surface of the semiconductor body into the semiconductor body. The rectifier element is integrated in the first trench in a rectifier region that is adjacent at least one of the source region and the body region.
    Type: Application
    Filed: July 25, 2018
    Publication date: January 31, 2019
    Inventors: Ralf Siemieniec, Robert Haase, Gerhard Noebauer, Martin Poelzl
  • Patent number: 9991347
    Abstract: A power semiconductor device includes a semiconductor substrate having a drift region, a gate electrode trench in the semiconductor substrate and a field electrode needle trench in the semiconductor substrate. The gate electrode trench extends into the drift region and includes a gate electrode. The gate electrode is arranged in the gate electrode trench and electrically insulated from the drift region by a gate dielectric layer arranged between the gate electrode and the drift region. The field electrode needle trench is laterally spaced from the gate electrode trench and extends into the drift region. The field electrode needle trench includes a field electrode arranged in the field electrode needle trench and electrically insulated from the drift region by a cavity formed between the field electrode and the drift region.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: June 5, 2018
    Assignee: Infineon Technologies Americas Corp.
    Inventors: Robert Haase, Timothy Henson
  • Publication number: 20180151676
    Abstract: A method for manufacturing a semiconductor device includes: providing a semiconductor substrate having a first side; forming a trench in the semiconductor substrate, the trench having a bottom and a sidewall extending from the bottom to the first side of the semiconductor substrate; forming an insulation structure including at least a first insulation layer and a second insulation layer on the sidewall and the bottom of the trench; forming a lower conductive structure in the lower portion of the trench; removing the second insulation layer in an upper portion of the trench while leaving the second insulation layer at least partially in a lower portion of the trench; and forming an upper conductive structure in the upper portion of the trench.
    Type: Application
    Filed: October 5, 2017
    Publication date: May 31, 2018
    Inventors: Robert Haase, Martin Vielemeyer
  • Patent number: 9966464
    Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a source trench in a drift region, the source trench having a source trench dielectric liner and a source trench conductive filler surrounded by the source trench dielectric liner, a source region in a body region over the drift region. The semiconductor structure also includes a patterned source trench dielectric cap forming an insulated portion and an exposed portion of the source trench conductive filler, and a source contact layer coupling the source region to the exposed portion of the source trench conductive filler, the insulated portion of the source trench conductive filler increasing resistance between the source contact layer and the source trench conductive filler under the patterned source trench dielectric cap. The source trench is a serpentine source trench having a plurality of parallel portions connected by a plurality of curved portions.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: May 8, 2018
    Assignee: Infineon Technologies Americas Corp.
    Inventors: Kapil Kelkar, Timothy D. Henson, Ling Ma, Mary Bigglestone, Adam Amali, Hugo Burke, Robert Haase
  • Publication number: 20180075164
    Abstract: One embodiment of the present invention sets forth a method of selecting an entry in a database in an in-vehicle infotainment system. The method includes receiving a second single-character input after receiving a first single-character input, generating a multi-character search string in which the first character of the multi-character search string is the first single-character input and the second character of the multi-character search string is the second single-character input, searching a database stored in the in-vehicle infotainment system for entries that match the multi-character search string, and causing a number of entries that match the multi-character search string to be displayed by the in-vehicle infotainment system. An advantage of the disclosed embodiment is that a vehicle operator can effectively search through a large number of entries in an in-vehicle system with reduced distraction and without stopping the vehicle.
    Type: Application
    Filed: April 10, 2015
    Publication date: March 15, 2018
    Inventors: Robert HAASE, Steven Edward MONTEALEGRE, Lipka VOLKER
  • Publication number: 20170330943
    Abstract: A power semiconductor device includes a semiconductor substrate having a drift region, a gate electrode trench in the semiconductor substrate and a field electrode needle trench in the semiconductor substrate. The gate electrode trench extends into the drift region and includes a gate electrode. The gate electrode is arranged in the gate electrode trench and electrically insulated from the drift region by a gate dielectric layer arranged between the gate electrode and the drift region. The field electrode needle trench is laterally spaced from the gate electrode trench and extends into the drift region. The field electrode needle trench includes a field electrode arranged in the field electrode needle trench and electrically insulated from the drift region by a cavity formed between the field electrode and the drift region.
    Type: Application
    Filed: May 16, 2017
    Publication date: November 16, 2017
    Inventors: Robert Haase, Timothy Henson
  • Patent number: 9812535
    Abstract: A method for manufacturing a semiconductor device includes: providing a semiconductor substrate having a first side; forming a trench in the semiconductor substrate, the trench having a bottom and a sidewall extending from the bottom to the first side of the semiconductor substrate; forming an insulation structure including at least a first insulation layer and a second insulation layer on the sidewall and the bottom of the trench; forming a lower conductive structure in the lower portion of the trench; removing the second insulation layer in an upper portion of the trench while leaving the second insulation layer at least partially in a lower portion of the trench; and forming an upper conductive structure in the upper portion of the trench, wherein at least one of the lower conductive structure and the upper conductive structure comprises a metal, a metal alloy, a metal silicide, or a combination thereof.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: November 7, 2017
    Assignee: Infineon Technologies Austria AG
    Inventors: Robert Haase, Martin Vielemeyer
  • Publication number: 20170186861
    Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a source trench in a drift region, the source trench having a source trench dielectric liner and a source trench conductive filler surrounded by the source trench dielectric liner, a source region in a body region over the drift region. The semiconductor structure also includes a patterned source trench dielectric cap forming an insulated portion and an exposed portion of the source trench conductive filler, and a source contact layer coupling the source region to the exposed portion of the source trench conductive filler, the insulated portion of the source trench conductive filler increasing resistance between the source contact layer and the source trench conductive filler under the patterned source trench dielectric cap. The source trench is a serpentine source trench having a plurality of parallel portions connected by a plurality of curved portions.
    Type: Application
    Filed: March 13, 2017
    Publication date: June 29, 2017
    Inventors: Kapil Kelkar, Timothy D. Henson, Ling Ma, Mary Bigglestone, Adam Amali, Hugo Burke, Robert Haase
  • Patent number: 9691864
    Abstract: A method for manufacturing a semiconductor device includes: providing a semiconductor substrate; forming at least one recess in the semiconductor substrate; the recess having a bottom and a sidewall; forming an auxiliary structure on the sidewall and the bottom of the recess and forming a hollow space within the recess; filling the hollow space of the recess with a filling material for forming a filling structure in the recess; removing portions of the auxiliary structure from the sidewall of the recess so as to form at least one cavity between the filling structure and the sidewall of the recess; and sealing the cavity at the first side of the semiconductor substrate.
    Type: Grant
    Filed: May 13, 2016
    Date of Patent: June 27, 2017
    Assignee: Infineon Technologies Americas Corp.
    Inventors: Robert Haase, Timothy Henson
  • Patent number: 9627328
    Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a source trench in a drift region, the source trench having a source trench dielectric liner and a source trench conductive filler surrounded by the source trench dielectric liner, a source region in a body region over the drift region. The semiconductor structure also includes a patterned source trench dielectric cap forming an insulated portion and an exposed portion of the source trench conductive filler, and a source contact layer coupling the source region to the exposed portion of the source trench conductive filler, the insulated portion of the source trench conductive filler increasing resistance between the source contact layer and the source trench conductive filler under the patterned source trench dielectric cap. The source trench is a serpentine source trench having a plurality of parallel portions connected by a plurality of curved portions.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: April 18, 2017
    Assignee: Infineon Technologies Americas Corp.
    Inventors: Kapil Kelkar, Timothy D. Henson, Ling Ma, Mary Bigglestone, Adam Amali, Hugo Burke, Robert Haase
  • Patent number: 9620583
    Abstract: A power semiconductor device is disclosed. The power semiconductor device includes a source region in a body region, a gate trench adjacent to the source region, and a source trench electrically coupled to the source region. The source trench includes a source trench conductive filler surrounded by a source trench dielectric liner, and extends into a drift region. The power semiconductor device includes a source trench implant below the source trench and a drain region below the drift region, where the source trench implant has a conductivity type opposite that of the drift region. The power semiconductor device may also include a termination trench adjacent to the source trench, where the termination trench includes a termination trench conductive filler surrounded by a termination trench dielectric liner. The power semiconductor device may also include a termination trench implant below the termination trench.
    Type: Grant
    Filed: September 16, 2015
    Date of Patent: April 11, 2017
    Assignee: Infineon Technologies Americas Corp.
    Inventors: Kapil Kelkar, Timothy D. Henson, Ling Ma, Mary Bigglestone, Adam Amali, Hugo Burke, Robert Haase
  • Patent number: 9542241
    Abstract: A navigation system is provided with an application programming interface to enable efficient integration of a navigation solution into a navigation platform. The system includes a client-server architecture and the API is implemented with a standardized set of request and response functions defined in the client and server, respectively. The API includes a rapid prototyping interface component for enabling development of a navigation solution independent of a particular navigation platform. An information discovery and exchange interface component enables the navigation platform (client) to discover and retrieve the information available from the navigation solution (server) navigation solution.
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: January 10, 2017
    Assignee: HARMAN INTERNATIONAL INDUSTRIES, INCORPORATED
    Inventors: Robert Haase, Rainer Oder, Steven Montealegre, Rhita Boufelliga
  • Patent number: 9418397
    Abstract: Embodiments are disclosed for distributing processing tasks during a start up routine for a computing device between a central processing unit (CPU) and a graphics processing unit (GPU). In some embodiments, a method of loading an operating system for a computing device with a CPU includes receiving power from a power supply and locating a master boot record in a non-volatile storage device. The method further includes copying a first portion of a compressed operating system image from an address indicated by the master boot record to a location in a volatile storage device and instructing a GPU to decompress the first portion of the compressed operating system image in the volatile storage device.
    Type: Grant
    Filed: October 25, 2013
    Date of Patent: August 16, 2016
    Assignee: Harman International Industries, Incorporated
    Inventors: Robert Haase, Gregory Dale
  • Publication number: 20160104766
    Abstract: A power semiconductor device is disclosed. The power semiconductor device includes a source region in a body region, a gate trench adjacent to the source region, and a source trench electrically coupled to the source region. The source trench includes a source trench conductive filler surrounded by a source trench dielectric liner, and extends into a drift region. The power semiconductor device includes a source trench implant below the source trench and a drain region below the drift region, where the source trench implant has a conductivity type opposite that of the drift region. The power semiconductor device may also include a termination trench adjacent to the source trench, where the termination trench includes a termination trench conductive filler surrounded by a termination trench dielectric liner. The power semiconductor device may also include a termination trench implant below the termination trench.
    Type: Application
    Filed: September 16, 2015
    Publication date: April 14, 2016
    Inventors: Kapil Kelkar, Timothy D. Henson, Ling Ma, Mary Bigglestone, Adam Amali, Hugo Burke, Robert Haase
  • Publication number: 20160104773
    Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a source trench in a drift region, the source trench having a source trench dielectric liner and a source trench conductive filler surrounded by the source trench dielectric liner, a source region in a body region over the drift region. The semiconductor structure also includes a patterned source trench dielectric cap forming an insulated portion and an exposed portion of the source trench conductive filler, and a source contact layer coupling the source region to the exposed portion of the source trench conductive filler, the insulated portion of the source trench conductive filler increasing resistance between the source contact layer and the source trench conductive filler under the patterned source trench dielectric cap. The source trench is a serpentine source trench having a plurality of parallel portions connected by a plurality of curved portions.
    Type: Application
    Filed: September 30, 2015
    Publication date: April 14, 2016
    Inventors: Kapil Kelkar, Timothy D. Henson, Ling Ma, Mary Bigglestone, Adam Amali, Hugo Burke, Robert Haase
  • Publication number: 20150116342
    Abstract: Embodiments are disclosed for distributing processing tasks during a start up routine for a computing device between a central processing unit (CPU) and a graphics processing unit (GPU). In some embodiments, a method of loading an operating system for a computing device with a CPU includes receiving power from a power supply and locating a master boot record in a non-volatile storage device. The method further includes copying a first portion of a compressed operating system image from an address indicated by the master boot record to a location in a volatile storage device and instructing a GPU to decompress the first portion of the compressed operating system image in the volatile storage device.
    Type: Application
    Filed: October 25, 2013
    Publication date: April 30, 2015
    Applicant: Harman International Industries, Incorporated
    Inventors: Robert Haase, Gregory Dale
  • Patent number: 8668949
    Abstract: A fire pan provides a table-top or ground-supported pan or tray to hold a source of heat such as charcoal, burning wood, gas burner, and so forth. The pan places the heat source away from a surface, thus not damaging lawns, tabletops, parking lots, sidewalks, or other supporting surfaces. The pan may support one or more Dutch ovens, thus providing a “fire pit” of modest size, foldable into a very small envelope. Handles are extendible away from the pan for handling or moving, even when hot coals are present. The legs below are curved to fold up along the contour of the bottom surface of the pan.
    Type: Grant
    Filed: August 23, 2011
    Date of Patent: March 11, 2014
    Inventors: Todd G. Wilson, Andreas Robert Haase
  • Publication number: 20130019252
    Abstract: A navigation system is provided with an application programming interface to enable efficient integration of a navigation solution into a navigation platform. The system includes a client-server architecture and the API is implemented with a standardized set of request and response functions defined in the client and server, respectively. The API includes a rapid prototyping interface component for enabling development of a navigation solution independent of a particular navigation platform. An information discovery and exchange interface component enables the navigation platform (client) to discover and retrieve the information available from the navigation solution (server) navigation solution.
    Type: Application
    Filed: July 12, 2011
    Publication date: January 17, 2013
    Applicant: Harman International Industries, Incorporated
    Inventors: Robert Haase, Rainer Oder, Steven Montealegre, Rhita Boufelliga
  • Patent number: 8285485
    Abstract: A system and method is provided for identifying and generating a route that provides a driver with an exhilarating ride. In an example method, the navigation system obtains location data for routes between a starting and ending location. The location data is analyzed by identifying points of inflection of the curved road portion. At least one curved segment is identified as being road portions between the points of inflection. A linear distance, Llinear, is measured between the points of inflection of the at least one curved segment. A curve depth, H, is measured by identifying the maximum distance between the line between the points of inflection and any point on the curved segment along a perpendicular to the line between points of inflection. A curved segment degree of curviness=H/Llinear is calculated and used to determine the measure of curviness of the route.
    Type: Grant
    Filed: March 18, 2010
    Date of Patent: October 9, 2012
    Assignee: Harman International Industries, Incorporated
    Inventors: Steven Montealegre, Robert Haase, Rhita Boufelliga