Abstract: A direction indicator circuit for controlling a direction indicator may include: a first terminal for connecting to a supply voltage terminal; a second terminal for connecting to a direction indicator switch and a lighting means; a third terminal for connecting to a capacitor; wherein the direction indicator circuit is designed to provide the lighting means with a current during an on state and with no current during an off state, wherein the duration of the on state and the duration of the off state are determined by a voltage at the capacitor; wherein the direction indicator circuit has a first and a second circuit, wherein the capacitor provides the supply voltage for the first and second circuits during the on state; wherein the current which flows through the first circuit has a negative temperature coefficient, and the current which flows through the second circuit has a positive temperature coefficient.

Abstract: An embodiment method for power switch temperature control comprises monitoring a power transistor for a delta-temperature fault, and monitoring the power transistor for an over-temperature fault. If a delta-temperature fault is detected, then the power transistor is commanded to turn off. If an over-temperature fault is detected, then the power transistor is commanded to turn off, and delta-temperature hysteresis cycling is disabled.

Abstract: In a method for operating a power semiconductor circuit a power semiconductor chip is provided which includes a power semiconductor switch with a first load terminal and with a second load terminal. Further, a first temperature sensor which is thermally coupled to the power semiconductor switch and a second temperature sensor are provided. The power semiconductor switch is switched OFF or kept switched OFF if the temperature difference between a first temperature of the first temperature sensor and a second temperature of the second temperature sensor is greater than or equal to a switching-OFF threshold temperature difference which depends, following an inconstant first function, on the voltage drop across the power semiconductor switch between the first load terminal and the second load terminal.

Abstract: A transistor monolithically integrated in a semiconductor body includes a first sub-transistor and a second sub-transistor that both include a first and second load contacts and a control contact for controlling an electric current through a load path. The first load contact of the first sub-transistor is electrically connected to the first load contact of the second sub-transistor and the second load contact of the first sub-transistor is electrically connected to the second load contact of the second sub-transistor. A control circuit is configured to cause the first sub-transistor to switch from a first state to a second state at a first point of time and to cause the second sub-transistor to switch from the first state to the second state at a second point of time subsequent to the first point of time.

Abstract: Power transistor cells are formed in a cell array of an integrated circuit. Contact vias may electrically connect a metal structure above the cell array and the power transistor cells. A connecting line electrically connects a first element arranged in the cell array and a second element arranged in a peripheral region. A portion of the connecting line is arranged between the metal structure and the cell array and runs between a first axis and a second axis which are arranged parallel and at a distance to each other. The distance is greater than a width of the connecting line portion. The connecting line portion is tangent to both the first axis and the second axis. Shear-induced material transport along the connecting line is reduced by shortening critical portions or by exploiting grain boundary effects. The reliability of an insulator structure covering the connecting line is increased.

Abstract: An integrated circuit includes a base element and a copper element over the base element, the copper element having a thickness of at least 5 ?m and a ratio of average grain size to thickness of less than 0.7.

Abstract: A method can be used for driving an electronic switch integrated in a semiconductor body. A first temperature is measured at a first position of the semiconductor body. A temperature propagation is detected in the semiconductor body. The electronic switch is switched off when the temperature at the first position rises above a first threshold that is set dependent on the detected temperature propagation.

Abstract: A semiconductor device includes a semiconductor chip including an active area. A temperature sensor arrangement provides a measurement signal dependent on the temperature in or close to the active area. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-temperature when the measurement signal exceeds the first threshold. The evaluation circuit is also configured to count the number of exceedances of the first threshold and to signal when a maximum number of exceedances is reached.

Abstract: In a method for operating a power semiconductor circuit a power semiconductor chip is provided which includes a power semiconductor switch with a first load terminal and with a second load terminal. Further, a first temperature sensor which is thermally coupled to the power semiconductor switch and a second temperature sensor are provided. The power semiconductor switch is switched OFF or kept switched OFF if the temperature difference between a first temperature of the first temperature sensor and a second temperature of the second temperature sensor is greater than or equal to a switching-OFF threshold temperature difference which depends, following an inconstant first function, on the voltage drop across the power semiconductor switch between the first load terminal and the second load terminal.

Abstract: In a method for operating a power semiconductor circuit a power semiconductor chip is provided which includes a power semiconductor switch with a first load terminal and with a second load terminal. Further, a first temperature sensor which is thermally coupled to the power semiconductor switch and a second temperature sensor are provided. The power semiconductor switch is switched OFF or kept switched OFF if the temperature difference between a first temperature of the first temperature sensor and a second temperature of the second temperature sensor is greater than or equal to a switching-OFF threshold temperature difference which depends, following an inconstant first function, on the voltage drop across the power semiconductor switch between the first load terminal and the second load terminal.

Abstract: A system and method for limiting current oscillation in power supplies. A method for operating a power supply comprises entering a current limitation mode, setting a current limit for a current flowing through a power switch of the power supply, and in response to determining a current limit has changed from a high value to a low value or detecting an occurrence of a fault condition, setting the current limit to the low value, and locking the current limit so that the current limit does not change. The method further comprises providing a current to a load coupled to the power supply.

Abstract: An embodiment method for power switch temperature control comprises monitoring a power transistor for a delta-temperature fault, and monitoring the power transistor for an over-temperature fault. If a delta-temperature fault is detected, then the power transistor is commanded to turn off. If an over-temperature fault is detected, then the power transistor is commanded to turn off, and delta-temperature hysteresis cycling is disabled.

Abstract: A semiconductor device with an over-current detection feature is disclosed. According to an example of the invention the device includes: a semiconductor chip including a load current path that conducts a load current in response to an input signal activating the load current flow. A current sensor arrangement provides a measurement signal representing the load current. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-current when the measurement signal exceeds the first threshold after a delay time period starting from the activation of the load current flow has elapsed.

Abstract: A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the active area, the measurement signal having a slope of a time-dependent steepness, and an evaluation circuit that is configured to provide an output signal that is representative of the steepness of the slope of the measurement signal and further configured to signal a steepness higher than a predefined threshold.

Abstract: A semiconductor device with an over-current detection feature is disclosed. According to an example of the invention the device includes: a semiconductor chip including a load current path that conducts a load current in response to an input signal activating the load current flow. A current sensor arrangement provides a measurement signal representing the load current. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-current when the measurement signal exceeds the first threshold after a delay time period starting from the activation of the load current flow has elapsed.

Abstract: A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the active area, the measurement signal having a slope of a time-dependent steepness, and an evaluation circuit that is configured to provide an output signal that is representative of the steepness of the slope of the measurement signal and further configured to signal a steepness higher than a predefined threshold.

Abstract: A semiconductor switch, is provided that comprises a semiconductor element having a control terminal and two load terminals forming switching contacts of the semiconductor switch, a temperature measuring device for measuring the temperatures of the semiconductor element at two measurement locations spaced apart from one another, and also a control circuit connected between the temperature measuring device and the control terminal of the semiconductor element and having a control input forming the control contact of the semiconductor element, wherein provision is made for: measuring the temperatures of the semiconductor element at two measurement locations spaced apart from one another; providing a signal representing the difference between the two temperatures; driving a driving current of specific intensity into the control terminal of the semiconductor element if a corresponding signal is present at the control input in order to control the semiconductor element in the conducting state between its load term

Abstract: A semiconductor switch, is provided that comprises a semiconductor element having a control terminal and two load terminals forming switching contacts of the semiconductor switch, a temperature measuring device for measuring the temperatures of the semiconductor element at two measurement locations spaced apart from one another, and also a control circuit connected between the temperature measuring device and the control terminal of the semiconductor element and having a control input forming the control contact of the semiconductor element, wherein provision is made for: measuring the temperatures of the semiconductor element at two measurement locations spaced apart from one another; providing a signal representing the difference between the two temperatures; driving a driving current of specific intensity into the control terminal of the semiconductor element if a corresponding signal is present at the control input in order to control the semiconductor element in the conducting state between its load term

Abstract: In a method for operating a power semiconductor circuit a power semiconductor chip is provided which includes a power semiconductor switch with a first load terminal and with a second load terminal. Further, a first temperature sensor which is thermally coupled to the power semiconductor switch and a second temperature sensor are provided. The power semiconductor switch is switched OFF or kept switched OFF if the temperature difference between a first temperature of the first temperature sensor and a second temperature of the second temperature sensor is greater than or equal to a switching-OFF threshold temperature difference which depends, following an inconstant first function, on the voltage drop across the power semiconductor switch between the first load terminal and the second load terminal.

Abstract: A system and method for limiting current oscillation in power supplies. A method for operating a power supply comprises entering a current limitation mode, setting a current limit for a current flowing through a power switch of the power supply, and in response to determining a current limit has changed from a high value to a low value or detecting an occurrence of a fault condition, setting the current limit to the low value, and locking the current limit so that the current limit does not change. The method further comprises providing a current to a load coupled to the power supply.