Patents by Inventor Robert J. McCoy

Robert J. McCoy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4414561
    Abstract: An ohmic contact to a semiconductor device comprising p-type InP is formed by sequentially depositing beryllium-gold and gold layers on InP and then heat-treating the device at a temperature less than 440 degrees C. An ohmic contact to p-type InGaAsP can be similarly formed.
    Type: Grant
    Filed: September 7, 1982
    Date of Patent: November 8, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Vassilis G. Keramidas, Robert J. McCoy, Henryk Temkin
  • Patent number: 4366186
    Abstract: An ohmic contact to a semiconductor device comprising p-type InP is formed by sequentially depositing beryllium-gold and gold layers on InP and then heat-treating the device at a temperature less than 440 degrees C. An ohmic contact to p-type InGaAsP can be similarly formed.
    Type: Grant
    Filed: September 27, 1979
    Date of Patent: December 28, 1982
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Vassilis G. Keramidas, Robert J. McCoy, Henryk Temkin
  • Patent number: 4179534
    Abstract: A semiconductor device with a low resistance ohmic contact, strongly adherent to the n-type surface of a body (11) of Group III-V compound semiconductor is obtained by a process including the sequential deposition of gold (13), tin (14) and gold (15) at a surface temperature of less than 200 degrees C followed by a heat treatment in a nonoxidizing atmosphere. This process has shown particular advantage when applied to aluminum containing compound semiconductors (e.g., gallium aluminum arsenide). For such use an initial deposition of aluminum (16) has proven particularly successful in producing consistently low resistance ohmic contacts. The invention has been used in the production of light emitting diodes.
    Type: Grant
    Filed: May 24, 1978
    Date of Patent: December 18, 1979
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Chuan C. Chang, Felix Ermanis, Robert J. McCoy, Shohei Nakahara, Tan T. Sheng