Abstract: A bank of nano electromechanical integrated circuit filters. The bank of integrated circuit filters comprising a silicon substrate; a sacrificial layer; a device layer including at least two resonators, wherein the at least two resonators include sub-micro excitable elements and wherein the at least two resonators posses a fundamental mode frequency as well as a collective mode frequency and wherein the collective mode frequency of the at least two resonators is determined by the fundamental frequency of the sub-micron elements. At least one switch connects to the bank of integrated circuit filters.

Abstract: A nano electromechanical integrated circuit filter and method of making. The filter comprises a silicon substrate; a sacrificial layer; a device layer including at least one resonator, wherein the resonator includes sub-micron excitable elements and wherein the at least one resonator possess a fundamental mode frequency as well as a collective mode frequency and wherein the collective mode frequency of the at least one resonator is determined by the fundamental frequency of the sub-micron elements.

Abstract: A mechanical oscillator has components with dimensions in a sub-micron range to produce resonance mode oscillations in a gigahertz range. A major element is coupled to a minor, sub-micron element to produce large amplitude gigahertz frequency oscillation that is detected with readily available techniques. The mechanical structure can be formed according to a number of geometries including beams and rings and is excited with electrostatic, magnetic and thermal related forces, as well as other excitation techniques. The mechanical structure can be arranged in arrays for applications such as amplification and mixing and is less sensitive to shock and radiative environments than electrical or optical counterparts.

Abstract: Electro-mechanical oscillating devices designed to convert the frequency of electrical signal(s) and methods associated with the same are described. One example of such a frequency converting device is a mixer.

Abstract: A bank of nano electromechanical integrated circuit filters. The bank of integrated circuit filters comprising a silicon substrate; a sacrificial layer; a device layer including at least two resonators, wherein the at least two resonators include sub-micro excitable elements and wherein the at least two resonators posses a fundamental mode frequency as well as a collective mode frequency and wherein the collective mode frequency of the at least two resonators is determined by the fundamental frequency of the sub-micron elements. At least one switch connects to the bank of integrated circuit filters.

Abstract: This energy contamination monitor has an ionization apparatus configured to ionize the neutral particles in an ion beam. Neutral particles are ionized, separated based at least in part upon different transit times over a distance, and measured with the Faraday electrode based at least in part upon the different transit times. The energy contamination monitor can distinguish between fast and slow neutral particles.

Abstract: A nano electromechanical integrated circuit filter and method of making. The filter comprises a silicon substrate; a sacrificial layer; a device layer including at least one resonator, wherein the resonator includes sub-micron excitable elements and wherein the at least one resonator possess a fundamental mode frequency as well as a collective mode frequency and wherein the collective mode frequency of the at least one resonator is determined by the fundamental frequency of the sub-micron elements.

Abstract: A memory device includes a mechanical element that exhibits distinct bistable states under amplitude modulation. The states are dynamically bistable or multi-stable with the application of a drive signal of a given frequency. The natural resonance of the element in conjunction with a hysteretic effect produces distinct states over a specific frequency range. Devices with multiple elements that respond to different frequency ranges provided on a common contact are formed with improved density. The devices may be excited and read with magnetomotive, capacitive, piezoelectric and/or optical methods. The devices may be planar oriented or out of plane oriented to permit three dimensional memory structures. DC biases may be used to shift frequency responses to permit an alternate method for differentiating states of the element.