Patents by Inventor Robert McCormick

Robert McCormick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6468601
    Abstract: An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber.
    Type: Grant
    Filed: March 10, 2000
    Date of Patent: October 22, 2002
    Assignee: Applied Komatsu Technology, Inc.
    Inventors: Quanyuan Shang, Robert McCormick Robertson, Kam S. Law, Dan Maydan
  • Publication number: 20020018862
    Abstract: A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature sufficiently higher than the first temperature to substantially reduce the hydrogen concentration in the precursor layer. The preheating and annealing steps can occur in the same thermal processing chamber. Then the precursor layer is converted to a polycrystaline silicon layer by laser annealing.
    Type: Application
    Filed: September 10, 2001
    Publication date: February 14, 2002
    Applicant: Applied Kamatsu Technology, Inc.
    Inventors: Chuang-Chuang Tsai, Takako Takehara, Regina Qiu, Yvonne LeGrice, William Reid Harshbarger, Robert McCormick Robertson
  • Patent number: 6294219
    Abstract: A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature sufficiently higher than the first temperature to substantially reduce the hydrogen concentration in the precursor layer. The preheating and annealing steps can occur in the same thermal processing chamber. Then the precursor layer is converted to a polycrystaline silicon layer by laser annealing.
    Type: Grant
    Filed: March 3, 1998
    Date of Patent: September 25, 2001
    Assignee: Applied Komatsu Technology, Inc.
    Inventors: Chuang-Chuang Tsai, Takako Takehara, Regina Qiu, Yvonne LeGrice, William Reid Harshbarger, Robert McCormick Robertson
  • Patent number: 6177023
    Abstract: An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support layer, introducing a plasma in the processing chamber, lowering the substrate to a point where the substrate engages the support layer, and maintaining the plasma for a predetermined time. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. Means are provided for moving each lift pin relative to the support layer. Means are also provided for producing a plasma within the processing chamber.
    Type: Grant
    Filed: July 11, 1997
    Date of Patent: January 23, 2001
    Assignee: Applied Komatsu Technology, Inc.
    Inventors: Quanyuan Shang, Robert McCormick Robertson, Kam S. Law, James T. Gardner
  • Patent number: 6172322
    Abstract: A system and method for annealing a film on a substrate in a processing chamber, including a microwave generator disposed to provide microwaves to an area within the interior of the chamber. The microwaves have a frequency such that the film is substantially absorptive at the frequency but the substrate is not substantially absorptive at the frequency. A waveguide distributes the microwaves over the surface of the film to provide a substantially uniform dosage of microwaves over the surface of the film. The method includes depositing a film on a substrate in the processing chamber. During at least a portion of the time of the depositing step, microwaves are generated having a frequency such that the film has an absorption peak at the frequency but the substrate lacks a substantial absorption peak at the frequency. The microwaves are directed towards the film.
    Type: Grant
    Filed: November 7, 1997
    Date of Patent: January 9, 2001
    Assignee: Applied Technology, Inc.
    Inventors: Quanyuan Shang, Robert McCormick Robertson, Kam S. Law, Takako Takehara, Taekyung Won, Sheng Sun
  • Patent number: 6055927
    Abstract: An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber.
    Type: Grant
    Filed: January 14, 1997
    Date of Patent: May 2, 2000
    Assignee: Applied Komatsu Technology, Inc.
    Inventors: Quanyuan Shang, Robert McCormick Robertson, Kam S. Law, Dan Maydan
  • Patent number: 5469188
    Abstract: A method of pre-analyzing video signals obtained from a digital image stores the digital image in a frame buffer store in a specified video digital format. The amplitude, saturation and frequency of the stored digital image when converted into another video format, such as RGB or composite broadcast video, are each analyzed independently to identify areas of the stored digital image that might produce distortions in the final video format when displayed. Amplitude analysis is accomplished by converting the stored digital image into an RGB image, and each component is compared with predetermined limits to detect amplitude errors. Saturation analysis is accomplished by generating a saturation signal from the chrominance components of the stored digital image, and then comparing a function of the saturation signal with predetermined limits to detect oversaturation errors.
    Type: Grant
    Filed: April 27, 1992
    Date of Patent: November 21, 1995
    Assignee: Tektronix, Inc.
    Inventors: Suresh Krishnamurthy, Robert A. McCormick, Kenneth F. Cone, Gary L. Brown, Ronald W. Bryant
  • Patent number: 4743962
    Abstract: A visible representation of a colored image is created on a print-receiving area by resolving the colored image into p raster lines and resolving each raster line into q pixels, and creating a succession of sequences of digital words such that each word is associated with a pixel of the image and has one of n possible values, representing the color of the pixel. Consecutive words in each sequence of digital words are associated with adjacent pixels in a raster line of the image and consecutive sequences in the succession of sequences are associated with adjacent raster lines. First, for each of the n possible values of each digital word, a measure of the number of words that have that value is determined. Second, a set of the n possible values is selected, such that the number yielded in the first step for each value is not zero. Third, a subset of the selected set is identified such that pixels having the colors represented by the values in the subset do not appear adjacent each other in the image.
    Type: Grant
    Filed: June 8, 1987
    Date of Patent: May 10, 1988
    Assignee: Tektronix, Inc.
    Inventor: Robert A. McCormick