Patents by Inventor Robert Okojie

Robert Okojie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Diffusion barrier systems (DBS) for high temperature semiconductor electrical contacts
    Patent number: 10381455
    Abstract: A diffusion barrier system may prevent migration of gold, oxygen, or both on a plurality of ohmic contacts. The diffusion barrier system may include a first barrier system or a second barrier system. Each barrier system may include a first metallization layer, a second metallization layer, and a third metallization layer.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: August 13, 2019
    Assignee: United States of America as Represented by the Administrator of National Aeronautics and Space Administration
    Inventor: Robert Okojie
  • Material damage system and method for determining same
    Patent number: 9766053
    Abstract: A system and method for determining a change in a thickness and temperature of a surface of a material are disclosed herein. The system and the method are usable in a thermal protection system of a space vehicle, such as an aeroshell of a space vehicle. The system and method may incorporate micro electric sensors arranged in a ladder network and capacitor strip sensors. Corrosion or ablation causes a change in an electrical property of the sensors. An amount of or rate of the corrosion or the ablation and a temperature of the material is determined based on the change of the electrical property of the sensors.
    Type: Grant
    Filed: November 21, 2011
    Date of Patent: September 19, 2017
    Assignee: The United States of America as Represented by the Administrator of NASA
    Inventor: Robert Okojie
  • Dopant selective reactive ion etching of silicon carbide
    Patent number: 9452926
    Abstract: A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.
    Type: Grant
    Filed: July 30, 2012
    Date of Patent: September 27, 2016
    Assignee: The United States of America as Represented by the Administrator of National Aeronautics and Space Administration
    Inventor: Robert Okojie