Abstract: A priming device for a fluid cartridge, a fluid dispense device configured for priming the fluid cartridge, and a method for priming a fluid cartridge. The priming device includes an impact mechanism for a fluid cartridge, wherein the fluid cartridge is devoid of a backpressure device and has a fluid reservoir and an ejection head chip in fluid flow communication with the fluid reservoir.

Abstract: A priming device for a fluid cartridge, a fluid dispense device configured for priming the fluid cartridge, and a method for priming a fluid cartridge. The priming device includes an impact mechanism for a fluid cartridge, wherein the fluid cartridge is devoid of a backpressure device and has a fluid reservoir and an ejection head chip in fluid flow communication with the fluid reservoir.

Abstract: A pharmaceutical drug delivery device. The drug delivery device includes a device body, a fluid outlet nose cone attached to the drug delivery device body, and a fluid jet ejection cartridge containing a liquid pharmaceutical drug is disposed in the drug delivery device body. A fluid ejection head is attached to the fluid jet ejection cartridge and the fluid ejection head is in fluid flow communication with the fluid outlet nose cone. The fluid outlet nose cone has a plurality of air flow channels open to an ambient atmosphere for providing a pressure differential between an inner area of the fluid outlet nose cone adjacent to the fluid ejection head and the ambient atmosphere.

Abstract: A drug delivery device and method of using the device. The device includes a cartridge body; a fluid outlet nozzle attached to the cartridge body; and a cartridge disposed in the cartridge body. A fluid ejection head is attached to the cartridge and is in fluid flow communication with the fluid outlet nozzle. The cartridge contains a liquid pharmaceutical drug. A logic board is disposed in cartridge body and is electrically connected to the ejection head on the ejection cartridge. A processor is disposed on the logic board or on the fluid ejection head for executing a control algorithm to control the ejection head to modify plume characteristics of fluid ejected from the ejection head by controlling one or more operating parameters selected from (a) a number of fluid ejectors fired per ejection burst, (b) a position of fluid ejectors fired per ejection burst, and (c) both (a) and (b).

Abstract: A pharmaceutical drug delivery device and method of using the pharmaceutical drug delivery device. The pharmaceutical drug delivery device includes a cartridge body; a fluid outlet nozzle attached to the cartridge body; and a fluid jet ejection cartridge disposed in the cartridge body, wherein the cartridge contains a liquid pharmaceutical drug and a fluid ejection head containing a plurality of fluid ejection nozzles and associated fluid ejectors. A processor disposed on a logic board or fluid ejection head is provided for executing a control algorithm to control the ejection head to modify plume characteristics of fluid ejected from the ejection head by controlling one or more of fluid jet firing frequency, burst length, and fluid jet firing burst delay.

Abstract: Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition.

Abstract: The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases (F or Cl), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources.

Abstract: Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics.

Abstract: A vapor delivery system for delivering a steady flow of sublimated vapor to a vacuum chamber comprises a vaporizer of solid material, a mechanical throttling valve, and a pressure gauge, followed by a vapor conduit to the vacuum chamber. The vapor flow rate is determined by both the temperature of the vaporizer and the setting of the conductance of the mechanical throttle valve located between the vaporizer and the vacuum chamber. The temperature of the vaporizer is determined by closed-loop control to a set-point temperature. The mechanical throttle valve is electrically controlled, e.g. the valve position is under closed-loop control to the output of the pressure gauge. In this way the vapor flow rate can be generally proportional to the pressure gauge output. All surfaces exposed to the vapor from the vaporizer to the vacuum chamber are heated to prevent condensation.

Abstract: Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics.

Abstract: The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources.

Abstract: A processing system for processing a substrate with a plasma comprises a processing chamber defining a process space including a support structure for supporting a substrate within the process space. A gas inlet in the chamber introduces a process gas into the chamber and a showerhead positioned within the chamber disperses process gas from the inlet. A supply of electrical energy biases the showerhead to form a plasma with process gas dispersed by the showerhead. First and second electrical insulator elements are positioned between the showerhead and the processing chamber, and are operable to electrically insulate the showerhead from the processing chamber. The first and second electrical insulator elements each have a passage therethrough for passing a process gas from the gas inlet through the insulator element and the respective passages of the insulator elements are laterally spaced from each other.

Abstract: Controlled, low-turbulence venting of a semiconductor processing vacuum chamber is provided by a venting system including sensing elements for sensing gas conditions, including pressure, in the chamber during venting, and vent rate control elements, including a flow rate regulator valve, responsive to the sensing elements for attaining a venting rate approaching a selected maximal venting rate threshold of sonically choked flow, thereby attaining enhanced non-sonically-choked venting.

Abstract: Apparatus for positioning a semiconductor wafer with respect to a localized vacuum envelope so as to maintain a prescribed gap between the tip of the vacuum envelope and the wafer includes an x-y table, a stage assembly movable along the z-axis for holding the wafer and a z-axis actuator assembly. The z-axis actuator assembly includes a plurality of fluid-containing bellows coupled between the x-y table and the stage assembly and a hydraulic controller operated by a linear stepper motor for varying the fluid volume in each of the bellows in response to an actuator control signal so as to move the stage assembly along the z-axis. The z-axis actuator assembly can further include a flexible disk positioned in the plane of x-y movement and coupled between the x-y table and the stage assembly for preventing lateral and rotational movement of the stage assembly relative to the x-y table. The positioning apparatus is suitable for use in an electron beam lithography system.