Patents by Inventor Robert W. Milgate, III

Robert W. Milgate, III has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220296829
    Abstract: A pharmaceutical drug delivery device. The drug delivery device includes a device body, a fluid outlet nose cone attached to the drug delivery device body, and a fluid jet ejection cartridge containing a liquid pharmaceutical drug is disposed in the drug delivery device body. A fluid ejection head is attached to the fluid jet ejection cartridge and the fluid ejection head is in fluid flow communication with the fluid outlet nose cone. The fluid outlet nose cone has a plurality of air flow channels open to an ambient atmosphere for providing a pressure differential between an inner area of the fluid outlet nose cone adjacent to the fluid ejection head and the ambient atmosphere.
    Type: Application
    Filed: October 22, 2021
    Publication date: September 22, 2022
    Applicant: FUNAI ELECTRIC CO., LTD.
    Inventors: James D. ANDERSON, JR., Bruce D. GIBSON, Brian T. JONES, Robert W. MILGATE, III, Tetsuya SHIHARA
  • Patent number: 8368309
    Abstract: Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition.
    Type: Grant
    Filed: December 29, 2006
    Date of Patent: February 5, 2013
    Assignee: SemEquip, Inc.
    Inventors: Thomas N. Horsky, Robert W. Milgate, III, George P. Sacco, Jr., Dale Conrad Jacobson, Wade Allen Krull
  • Patent number: 7820981
    Abstract: The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases (F or Cl), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources.
    Type: Grant
    Filed: December 9, 2004
    Date of Patent: October 26, 2010
    Assignee: Semequip, Inc.
    Inventors: Thomas N. Horsky, Robert W. Milgate, III, George P. Sacco, Jr., Dale C. Jacobson, Wade A. Krull
  • Patent number: 7791047
    Abstract: Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics.
    Type: Grant
    Filed: June 12, 2006
    Date of Patent: September 7, 2010
    Assignee: Semequip, Inc.
    Inventors: Thomas N. Horsky, Robert W. Milgate, III, George P. Sacco, Jr., Dale Conrad Jacobson, Wade Allen Krull
  • Patent number: 7723700
    Abstract: A vapor delivery system for delivering a steady flow of sublimated vapor to a vacuum chamber comprises a vaporizer of solid material, a mechanical throttling valve, and a pressure gauge, followed by a vapor conduit to the vacuum chamber. The vapor flow rate is determined by both the temperature of the vaporizer and the setting of the conductance of the mechanical throttle valve located between the vaporizer and the vacuum chamber. The temperature of the vaporizer is determined by closed-loop control to a set-point temperature. The mechanical throttle valve is electrically controlled, e.g. the valve position is under closed-loop control to the output of the pressure gauge. In this way the vapor flow rate can be generally proportional to the pressure gauge output. All surfaces exposed to the vapor from the vaporizer to the vacuum chamber are heated to prevent condensation.
    Type: Grant
    Filed: December 9, 2004
    Date of Patent: May 25, 2010
    Assignee: Semequip, Inc.
    Inventors: Thomas N. Horsky, Robert W. Milgate, III
  • Publication number: 20100107980
    Abstract: Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics.
    Type: Application
    Filed: December 29, 2006
    Publication date: May 6, 2010
    Inventors: Thomas N. Horsky, Robert W. Milgate, III, George P. Sacco, JR., Dale Conrad Jacobson, Wade Allen Krull
  • Patent number: 7629590
    Abstract: The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources.
    Type: Grant
    Filed: December 29, 2006
    Date of Patent: December 8, 2009
    Assignee: Semequip, Inc.
    Inventors: Thomas N. Horsky, Robert W. Milgate, III, George P. Sacco, Jr., Dale C. Jacobson, Wade A. Krull
  • Patent number: 6173673
    Abstract: A processing system for processing a substrate with a plasma comprises a processing chamber defining a process space including a support structure for supporting a substrate within the process space. A gas inlet in the chamber introduces a process gas into the chamber and a showerhead positioned within the chamber disperses process gas from the inlet. A supply of electrical energy biases the showerhead to form a plasma with process gas dispersed by the showerhead. First and second electrical insulator elements are positioned between the showerhead and the processing chamber, and are operable to electrically insulate the showerhead from the processing chamber. The first and second electrical insulator elements each have a passage therethrough for passing a process gas from the gas inlet through the insulator element and the respective passages of the insulator elements are laterally spaced from each other.
    Type: Grant
    Filed: March 31, 1999
    Date of Patent: January 16, 2001
    Assignee: Tokyo Electron Limited
    Inventors: Stephen N. Golovato, Robert W. Milgate, III, Paul Louis Consoli
  • Patent number: 4836233
    Abstract: Controlled, low-turbulence venting of a semiconductor processing vacuum chamber is provided by a venting system including sensing elements for sensing gas conditions, including pressure, in the chamber during venting, and vent rate control elements, including a flow rate regulator valve, responsive to the sensing elements for attaining a venting rate approaching a selected maximal venting rate threshold of sonically choked flow, thereby attaining enhanced non-sonically-choked venting.
    Type: Grant
    Filed: June 6, 1988
    Date of Patent: June 6, 1989
    Assignee: Eclipse Ion Technology, Inc.
    Inventor: Robert W. Milgate, III
  • Patent number: 4560880
    Abstract: Apparatus for positioning a semiconductor wafer with respect to a localized vacuum envelope so as to maintain a prescribed gap between the tip of the vacuum envelope and the wafer includes an x-y table, a stage assembly movable along the z-axis for holding the wafer and a z-axis actuator assembly. The z-axis actuator assembly includes a plurality of fluid-containing bellows coupled between the x-y table and the stage assembly and a hydraulic controller operated by a linear stepper motor for varying the fluid volume in each of the bellows in response to an actuator control signal so as to move the stage assembly along the z-axis. The z-axis actuator assembly can further include a flexible disk positioned in the plane of x-y movement and coupled between the x-y table and the stage assembly for preventing lateral and rotational movement of the stage assembly relative to the x-y table. The positioning apparatus is suitable for use in an electron beam lithography system.
    Type: Grant
    Filed: September 19, 1983
    Date of Patent: December 24, 1985
    Assignee: Varian Associates, Inc.
    Inventors: Paul F. Petric, Michael S. Foley, John J. Waz, Robert W. Milgate, III