Patents by Inventor Roch Espiau De Lamaestre
Roch Espiau De Lamaestre has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240063245Abstract: An optoelectronic device includes at least one pixel, each pixel comprising an optical resonator comprising a photodetecting structure confined between a reflective metal layer and a second reflective metal layer; and a readout integrated circuit arranged on a substrate and comprising at least one buried readout electrode dedicated to the pixel and at least one metal or dielectric outer layer. The assembly comprising at least the reflective metal layer and the outer layer of the readout integrated circuit is called a planar assembly structure. The first metal layer is connected to the readout electrode by way of a metal via passing through the optical resonator structure and the planar assembly structure. The metal via is electrically isolated from the photodetecting structure and from the planar assembly structure.Type: ApplicationFiled: December 21, 2021Publication date: February 22, 2024Inventors: Alexandre DELGA, Roch ESPIAU DE LAMAESTRE
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Publication number: 20230054679Abstract: An optoelectronic device manufacturing method, including the following successive steps: transferring an active inorganic photosensitive diode stack on an integrated control circuit previously formed inside and on top of a semiconductor substrate; and forming a plurality of organic light-emitting diodes on the active photosensitive diode stack.Type: ApplicationFiled: August 16, 2022Publication date: February 23, 2023Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: François Templier, Roch Espiau de Lamaestre, Tony Maindron
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Patent number: 10461211Abstract: The invention pertains to a process for producing an array (1) of mesa-structured photodiodes (2), including at least the following steps: a) producing a useful layer (3); b) producing an etch mask formed of a plurality of etch pads (20); c) wet-etching part of the useful layer (3) located between the etch pads (20), forming a plurality of mesa-structured photodiodes (2), producing a recess (21); d) conformally depositing a passivation layer (14); e) removing the etch pads (20) by chemical dissolution; f) producing conductive pads (11).Type: GrantFiled: April 23, 2018Date of Patent: October 29, 2019Assignee: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Giacomo Badano, Clement Lobre, Roch Espiau de Lamaestre, Jean-Paul Chamonal
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Patent number: 10128386Abstract: A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.Type: GrantFiled: June 19, 2013Date of Patent: November 13, 2018Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Francois Boulard, Roch Espiau De Lamaestre, David Fowler, Olivier Gravrand, Johan Rothman
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Publication number: 20180309016Abstract: The invention pertains to a process for producing an array (1) of mesa-structured photodiodes (2), including at least the following steps: a) producing a useful layer (3); b) producing an etch mask formed of a plurality of etch pads (20); c) wet-etching part of the useful layer (3) located between the etch pads (20), forming a plurality of mesa-structured photodiodes (2), producing a recess (21); d) conformally depositing a passivation layer (14); e) removing the etch pads (20) by chemical dissolution; f) producing conductive pads (11).Type: ApplicationFiled: April 23, 2018Publication date: October 25, 2018Applicant: Commissariat a l'energie atomique et aux energies alternativesInventors: Giacomo BADANO, Clement LOBRE, Roch ESPIAU DE LAMAESTRE, Jean-Paul CHAMONAL
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Patent number: 9244207Abstract: An optical frequency filter comprises a support layer having reflective elements formed thereon, the reflective elements defining at least one periodic grid of substantially parallel slits, the period P, the height, and the width of the slits being selected in such a manner that the reflective elements form a wavelength-selective structure for a wavelength lying in a determined range of wavelengths. The support layer material has a refractive index nh and includes inclusions of a material of refractive index nb, where nb is strictly less than nh. The inclusions are flush with the surface of the support layer opposite from its surface on which the reflective elements are formed, and present height hbwherein 0.5hh?hb?1hh, hh being the support layer height, and width lbwhere 0.05P?lb?0.75P. Each inclusion is situated at least in part between two reflective elements.Type: GrantFiled: December 18, 2013Date of Patent: January 26, 2016Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventor: Roch Espiau De Lamaestre
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Patent number: 9224891Abstract: The invention relates to a photodetector for infrared light radiation having a given wavelength (?), including a stack of layers consisting of: a continuous layer (11) of a partially absorbent semiconductor material, which constitutes the photodetection area; a spacer layer (12) of a material that is transparent to said wavelength and has an index ne; and a structured metal mirror (13), the distance (g) between the top of said mirror and the semiconductor layer being less than (?)/ne and the mirror surface having a profile corresponding to the periodic repetition, according to period (P), of a basic pattern defined by the alternating series of raised surfaces (131, 132) and slots (133, 134) having the widths (L1, L2) and (L3, L4), respectively, the widths (L1) to (L4) being such that none are equal to zero, and that the sum thereof is equal to P and at least L1?L2 or L3?L4.Type: GrantFiled: January 4, 2013Date of Patent: December 29, 2015Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Daivid Fowler, Roch Espiau de Lamaestre
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Publication number: 20150340395Abstract: A photodetector element for infrared light radiation of a given wavelength, in a medium that is at least partially transparent to the infrared light radiation to be detected. The photodetector includes a layer of a partially absorbent semiconductor and a periodic structure placed at a distance from and in the near field of the semiconductor layer and exciting propagation modes parallel to the semiconductor layer, of the infrared light radiation to be detected. There is a perimetric electrical contact that frames the outline of the photodetector element and extends perpendicularly relative to the planes defined by the semiconductor layer and the periodic structure, which makes contact with said semiconductor layer, and that also forms an optical mirror for the modes excited by the periodic structure.Type: ApplicationFiled: June 19, 2013Publication date: November 26, 2015Inventors: Matthieu Duperron, Roch Espiau de Lamaestre, Olivier Gravrand
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Publication number: 20150303320Abstract: A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.Type: ApplicationFiled: June 19, 2013Publication date: October 22, 2015Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Francois BOULARD, Roch ESPIAU DE LAMAESTRE, David FOWLER, Olivier GRAVRAND, Johan ROTHMAN
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Patent number: 8884271Abstract: The present invention relates to a photodetector for detecting an infrared-light emission having a given wavelength (?) comprising a multilayer with: a layer (11) of a partially absorbent semiconductor; a spacer layer (12) made of a material that is transparent to said wavelength; and a structured metallic mirror (13), the distance (g) between the top of said mirror and said spacer layer being smaller than ? and said mirror comprising a network of holes defining an array of metallic reliefs with a pitch P of between 0.5 ?/nSC and 1.5 ?/nSC, where nSC is the real part of the refractive index of the semiconductor, a relief width L of between 9P/10 and P/2 and a hole depth h of between ?/100 and ?/15.Type: GrantFiled: December 16, 2011Date of Patent: November 11, 2014Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Roch Espiau De Lamaestre, Christophe Largeron
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Publication number: 20140319465Abstract: The invention relates to a photodetector for infrared light radiation having a given wavelength (?), including a stack of layers consisting of: a continuous layer (11) of a partially absorbent semiconductor material, which constitutes the photodetection area; a spacer layer (12) of a material that is transparent to said wavelength and has an index ne; and a structured metal mirror (13), the distance (g) between the top of said mirror and the semiconductor layer being less than (?)/ne and the mirror surface having a profile corresponding to the periodic repetition, according to period (P), of a basic pattern defined by the alternating series of raised surfaces (131, 132) and slots (133, 134) having the widths (L1, L2) and (L3, L4), respectively, the widths (L1) to (L4) being such that none are equal to zero, and that the sum thereof is equal to P and at least L1?L2 or L3?L4.Type: ApplicationFiled: January 4, 2013Publication date: October 30, 2014Inventors: Daivid Fowler, Roch Espiau De Lamaestre
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Publication number: 20140175282Abstract: An optical frequency filter comprises a support layer having reflective elements formed thereon, the reflective elements defining at least one periodic grid of substantially parallel slits, the period P, the height, and the width of the slits being selected in such a manner that the reflective elements form a wavelength-selective structure for a wavelength lying in a determined range of wavelengths. The support layer material has a refractive index nh and includes inclusions of a material of refractive index nb, where nb is strictly less than nh. The inclusions are flush with the surface of the support layer opposite from its surface on which the reflective elements are formed, and present height hbwherein 0.5h?hb?1hh, hh being the support layer height, and width lbwhere 0.05P?lb?0.75P. Each inclusion is situated at least in part between two reflective elements.Type: ApplicationFiled: December 18, 2013Publication date: June 26, 2014Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventor: Roch ESPIAU DE LAMAESTRE
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Publication number: 20140061832Abstract: The electro-optical device includes a semiconductor layer, a first metal layer and an electrical insulator layer disposed between the semiconductor layer and the first metal layer. The electrical insulator layer includes a silicon nitride layer so as to provide an interface between the first metal layer and the silicon nitride layer. The electro-optical device is configured to carry a plasmonic wave.Type: ApplicationFiled: May 2, 2011Publication date: March 6, 2014Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Alexandros Emboras, Roch Espiau De Lamaestre
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Patent number: 8618622Abstract: Backlit detector for the detection of electromagnetic radiation around a predetermined wavelength, including a semiconductor absorption layer, formed above a transparent medium, capable of transmitting at least some of said radiation, and a mirror above the semiconductor layer, and placed between the mirror and the semiconductor layer, a periodic grating of metallic patterns, the mirror and the grating being included in a layer of material transparent to said radiation and formed on the semiconductor layer.Type: GrantFiled: December 13, 2011Date of Patent: December 31, 2013Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Roch Espiau De Lamaestre, Salim Boutami, Olivier Gravrand, Jérôme Le Perchec
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Publication number: 20130264543Abstract: The present invention relates to a photodetector for detecting an infrared-light emission having a given wavelength (?) comprising a multilayer with: a layer (11) of a partially absorbent semiconductor; a spacer layer (12) made of a material that is transparent to said wavelength; and a structured metallic mirror (13), the distance (g) between the top of said mirror and said spacer layer being smaller than ? and said mirror comprising a network of holes defining an array of metallic reliefs with a pitch P of between 0.5 ?/nSC and 1.5 ?/nSC, where nSC is the real part of the refractive index of the semiconductor, a relief width L of between 9P/10 and P/2 and a hole depth h of between ?/100 and ?/15.Type: ApplicationFiled: December 16, 2011Publication date: October 10, 2013Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Roch Espiau De Lamaestre, Christophe Largeron
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Patent number: 8541791Abstract: A source of photons resulting from a recombination of localized excitons, including a semiconductor layer having a central portion surrounded with heavily-doped regions; above said central portion, a layer portion containing elements capable of being activated by excitons, coated with a first metallization; and under the semiconductor layer, a second metallization of greater extension than the first metallization. The distance between the first and second metallizations is on the order of from 10 to 60 nm; and the lateral extension of the first metallization is on the order of from ?0/10*ne to ?0/2*ne, where ?0 is the wavelength in vacuum of the emitted light and ne is the effective refractive index of the mode formed in the cavity created by the two metallizations.Type: GrantFiled: December 15, 2010Date of Patent: September 24, 2013Assignees: STMicroelectronics (Grenoble) SAS, Commissariat à l'Énergie Atomique et aux Énergies Alternatives Centre National de la Recherche ScientifiqueInventors: Roch Espiau de Lamaestre, Jean-Jacques Greffet, Bernard Guillaumot, Ruben Esteban Llorente
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Patent number: 8498503Abstract: An integrated optical coupler including in the medium separating a first integrated waveguide from a second substantially parallel integrated waveguide, a succession of strips parallel to one another and orthogonal to the general direction of the waveguides, said strips being made of a material having an absorption preventing the propagation of an electromagnetic wave across its volume, and having: a length H equal to k?/2nmedium, where k is an integer, ? is the central wavelength used, and nmedium is the optical index of the medium between the waveguides; a period P smaller than ?/2nmedium; and ends at a distance shorter than ?/10 from the waveguides.Type: GrantFiled: February 9, 2011Date of Patent: July 30, 2013Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Alexandre Mary, Salim Boutami, Roch Espiau De Lamaestre, Jérôme Le Perchec
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Publication number: 20120181645Abstract: Backlit detector for the detection of electromagnetic radiation around a predetermined wavelength, including a semiconductor absorption layer, formed above a transparent medium, capable of transmitting at least some of said radiation, and a minor above the semiconductor layer, and placed between the minor and the semiconductor layer, a periodic grating of metallic patterns, the minor and the grating being included in a layer of material transparent to said radiation and formed on the semiconductor layer.Type: ApplicationFiled: December 13, 2011Publication date: July 19, 2012Applicant: Commissariat A L'Energie Atomique Et Aux Energies AlternativesInventors: Roch Espiau De Lamaestre, Salim Boutami Boutami, Olivier Gravrand, Jérôme Le Perchec
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Patent number: 8125043Abstract: An element of photodetection of a radiation having a wavelength in vacuum close to a value ?0, including: a semiconductor layer of index ns and of a thickness ranging between ?0/4 ns and ?0/20 ns; on one side of the semiconductor layer, a first medium of index n1 smaller than ns, transparent to said wavelength; on the other side of the semiconductor layer: a region of a second medium of index n2 smaller than ns, having a width L substantially equal to ?0/ns and, on either side of said region, a third medium, of index n3 greater than index n2, forming a reflective interface with the second medium.Type: GrantFiled: July 13, 2010Date of Patent: February 28, 2012Assignee: Commissariat a l'Energie Atomique et Aux Energies AlternativesInventors: Salim Boutami, Roch Espiau De Lamaestre, Jérôme Le Perchec
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Publication number: 20110204323Abstract: A source of photons resulting from a recombination of localized excitons, including a semiconductor layer having a central portion surrounded with heavily-doped regions; above said central portion, a layer portion containing elements capable of being activated by excitons, coated with a first metallization; and under the semiconductor layer, a second metallization of greater extension than the first metallization. The distance between the first and second metallizations is on the order of from 10 to 60 nm; and the lateral extension of the first metallization is on the order of from ?0/10*ne to ?0/2*ne, where ?0 is the wavelength in vacuum of the emitted light and ne is the effective refractive index of the mode formed in the cavity created by the two metallizations.Type: ApplicationFiled: December 15, 2010Publication date: August 25, 2011Applicants: Commissariat à I'Energie Atomique et aux Energies Alternatives, Centre National de la Recherche Scientifique, STMicroelectronics (Grenoble) SASInventors: Roch Espiau de Lamaestre, Jean-Jacques Greffet, Bernard Guillaumot, Ruben Esteban Llorente