Patents by Inventor Rohan W. HOULDEN
Rohan W. HOULDEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11901880Abstract: An RF diplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The diplexer can include a pair of filter circuits, each with a plurality of series resonator devices and shunt resonator devices. In the ladder topology, the series resonator devices are connected in series while shunt resonator devices are coupled in parallel to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a plurality of series resonator devices, and a pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. A multiplexing device or inductor device can be configured to select between the signals coming through the first and second filter circuits.Type: GrantFiled: January 18, 2021Date of Patent: February 13, 2024Assignee: Akoustis, Inc.Inventors: Guillermo Moreno Granado, Rohan W. Houlden, David M. Aichele, Jeffrey B. Shealy
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Publication number: 20230336235Abstract: A front end module (FEM) for a 5.6/6.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6/6.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6/6.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6/6.6 GHz PA, a 5.6/6.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.Type: ApplicationFiled: June 22, 2023Publication date: October 19, 2023Inventors: Jeffrey B. SHEALY, Rohan W. HOULDEN, David M. ALCHELE
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Publication number: 20230327628Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL’s dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.Type: ApplicationFiled: June 8, 2023Publication date: October 12, 2023Inventors: Dae Ho KIM, Frank Zhiquang Bi, Mary Winters, Abhay Kochhar, Emad Mehdizadeh, Rohan W. Houlden, Jeffrey B. Shealy
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Publication number: 20230327649Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.Type: ApplicationFiled: June 13, 2023Publication date: October 12, 2023Inventors: Ya SHEN, Rohan W. HOULDEN, David M. AICHELE, Jeffrey B. SHEALY
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Patent number: 11736177Abstract: A front end module (FEM) for a 5.6/6.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6/6.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6/6.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6/6.6 GHz PA, a 5.6/6.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.Type: GrantFiled: December 7, 2021Date of Patent: August 22, 2023Assignee: Akoustis Inc.Inventors: Jeffrey B. Shealy, Rohan W. Houlden, David M. Aichele
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Patent number: 11689186Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.Type: GrantFiled: March 24, 2020Date of Patent: June 27, 2023Assignee: Akoustis, Inc.Inventors: Ya Shen, Rohan W. Houlden, David M. Aichele, Jeffrey B. Shealy
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Patent number: 11683021Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.Type: GrantFiled: December 9, 2019Date of Patent: June 20, 2023Assignee: Akoustis, Inc.Inventors: Jeffrey B. Shealy, Rohan W. Houlden, David M. Aichele
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Patent number: 11677372Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL's dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.Type: GrantFiled: April 14, 2021Date of Patent: June 13, 2023Assignee: Akoustis, Inc.Inventors: Dae Ho Kim, Frank Zhiquang Bi, Mary Winters, Abhay Saranswarup Kochhar, Emad Mehdizadeh, Rohan W. Houlden, Jeffrey B. Shealy
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Patent number: 11652469Abstract: An acoustic resonator device and method thereof. The device includes a substrate member having an air cavity region. A piezoelectric layer is coupled to and configured overlying the substrate member and the air cavity region. The piezoelectric layer is configured to be characterized by an x-ray rocking curve Full Width at Half Maximum (FWHM) ranging from 0 degrees to 2 degrees. A top electrode is coupled to and configured overlying the piezoelectric layer, while a bottom electrode coupled to and configured underlying the piezoelectric layer within the air cavity region. The configuration of the materials of the piezoelectric layer and the substrate member to achieve the specific FWHM range improves a power handling capability characteristic and a power durability characteristic.Type: GrantFiled: August 27, 2019Date of Patent: May 16, 2023Assignee: Akoustis, Inc.Inventors: Jeffrey B. Shealy, Shawn R. Gibb, Rohan W. Houlden, Joel M. Morgan
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Patent number: 11646717Abstract: An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.330 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.Type: GrantFiled: August 15, 2022Date of Patent: May 9, 2023Assignee: Akoustis, Inc.Inventors: Jeffrey B. Shealy, Michael D. Hodge, Rohan W. Houlden, Shawn R. Gibb, Mary Winters, Ramakrishna Vetury, David M. Aichele
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Patent number: 11646718Abstract: An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.855 GHz to 5.925 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.Type: GrantFiled: August 17, 2022Date of Patent: May 9, 2023Assignee: Akoustis, Inc.Inventors: Jeffrey B. Shealy, Michael D. Hodge, Rohan W. Houlden, Shawn R. Gibb, Mary Winters, Ramakrishna Vetury, David M. Aichele
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Patent number: 11646719Abstract: An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.835 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.Type: GrantFiled: August 11, 2022Date of Patent: May 9, 2023Assignee: AKOUSTIS, INC.Inventors: Jeffrey B. Shealy, Michael Hodge, Rohan W. Houlden, Shawn R. Gibb, Mary Winters, Ramakrishna Vetury, David M. Aichele
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Patent number: 11637545Abstract: An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.490 GHz to 5.835 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.Type: GrantFiled: August 11, 2022Date of Patent: April 25, 2023Assignee: AKOUSTIS, INC.Inventors: Jeffrey B. Shealy, Michael Hodge, Rohan W. Houlden, Shawn R. Gibb, Mary Winters, Ramakrishna Vetury, David M. Aichele
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Publication number: 20230112046Abstract: A resonator circuit device. The present invention provides for improved resonator shapes using egg-shaped, partial egg-shaped, and asymmetrical partial egg-shaped resonator structures. These resonator shapes are configured to give less spurious mode/noise below the resonant frequency (Fs) than rectangular, circular, and elliptical resonator shapes. These improved resonator shapes also provide filter layout flexibility, which allows for more compact resonator devices compared to resonator devices using conventionally shaped resonators.Type: ApplicationFiled: December 12, 2022Publication date: April 13, 2023Inventors: Zhiqiang BI, Dae Ho Kim, Pinal Patel, Kathy W. Davis, Rohan W. Houlden
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Patent number: 11621698Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.Type: GrantFiled: July 8, 2022Date of Patent: April 4, 2023Assignee: Akoustis, Inc.Inventors: Ya Shen, Rohan W. Houlden, David M. Aichele, Jeffrey B. Shealy
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Patent number: 11616490Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.Type: GrantFiled: July 6, 2022Date of Patent: March 28, 2023Assignee: Akoustis, Inc.Inventors: Dae Ho Kim, Mary Winters, Ramakrishna Vetury, Jeffrey B. Shealy, Rohan W. Houlden, David M. Aichele
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Patent number: 11611386Abstract: A front-end module (FEM) for a 6.1 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 6.1 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 6.1 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 6.1 GHz PA, a 6.1 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.Type: GrantFiled: June 15, 2022Date of Patent: March 21, 2023Assignee: Akoustis, Inc.Inventors: Jeffrey B. Shealy, Rohan W. Houlden, David M. Aichele
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Publication number: 20230034164Abstract: A multi-stage matching network filter circuit device. The device comprises bulk acoustic wave (BAW) resonator device having an input node, an output node, and a ground node. A first matching network circuit is coupled to the input node. A second matching network circuit is coupled to the output node. A ground connection network circuit coupled to the ground node. The first or second matching network circuit can include an inductive ladder network including a plurality of series inductors in a series configuration and a plurality of grounded inductors wherein each of the plurality of grounded inductors is coupled to the connection between each connected pair of series inductors. The inductive ladder network can include one or more LC tanks, wherein each of the one or more LC tanks is coupled between a connection between a series inductor and a subsequent series inductor, which is also coupled to a grounded inductor.Type: ApplicationFiled: October 6, 2022Publication date: February 2, 2023Inventors: Guillermo Moreno GRANADO, Rohan W. HOULDEN, David M. Aichele, Jeffrey B. SHEALY
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Patent number: 11552613Abstract: A resonator circuit device. The present invention provides for improved resonator shapes using egg-shaped, partial egg-shaped, and asymmetrical partial egg-shaped resonator structures. These resonator shapes are configured to give less spurious mode/noise below the resonant frequency (Fs) than rectangular, circular, and elliptical resonator shapes. These improved resonator shapes also provide filter layout flexibility, which allows for more compact resonator devices compared to resonator devices using conventionally shaped resonators.Type: GrantFiled: April 19, 2019Date of Patent: January 10, 2023Assignee: Akoustis, Inc.Inventors: Zhiqiang Bi, Dae Ho Kim, Pinal Patel, Kathy W Davis, Rohan W. Houlden
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Publication number: 20230006631Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.Type: ApplicationFiled: September 14, 2022Publication date: January 5, 2023Inventors: Rohan W. HOULDEN, Ya SHEN, David M. AICHELE, Jeffrey B. SHEALY