Abstract: New ionic thermal acid generator compounds are provided. Also provided are photoresist compositions, antireflective coating compositions, and chemical trim overcoat compositions, and methods of using the compositions.

Abstract: A chrome-free acidic aqueous solution of sulfuric acid and one or more organic acids and manganese (II) and (III) ions is applied to an organic polymer surface to etch the surface. The etched surface is then plated with metal.

Abstract: Acid generator compounds are provided that comprise an oxo-1,3-dioxolane moiety and/or an oxo-1,3-dioxane moiety. The acid generators are particularly useful as a photoresist composition component.

Abstract: The methods inhibit or reduce dimpling and voids during copper electroplating of through-holes with flash copper layers in substrates such as printed circuit boards. An acid solution containing reaction products of aromatic heterocyclic nitrogen compounds and epoxy-containing compounds is applied to the through-holes of the substrate followed by filling the through-holes with copper using a copper electroplating bath which includes additives such as brighteners and levelers.

Abstract: The invention provides a composition comprising at least the following A and B: A) a polymer comprising, in polymerized from, at least one “monomer that comprises at least one hydroxyl group;” and B) an organometal compound comprising at least one metal selected from Ti, Zr, Hf, Co, Mn, Zn, or combinations thereof, and wherein the organometal compound is present in an amount greater than 5 weight percent, based on the sum weight of A and B.

Abstract: Nano-sized particles of carbon black and various metal ions are mixed to form substantially homogenous solutions or dispersions. The nano-sized particles of carbon black and metal ions are electroplated on various types of substrates as composites of one or more metals and substantially uniformly dispersed nano-sized particles of carbon black within the metals.

Abstract: A thin indium metal layer is electroplated onto silver to prevent silver tarnishing. The indium and silver composite has high electrical conductivity.

Abstract: Native oxide removing and activating solutions containing fluoride ions and organic acids are used in the formation of metal layers on semiconductor wafers. The method may also be used in the formation of silicides and for preparing the metal silicides for additional metal plating and build-up. The solutions and methods may be used in the manufacture of photovoltaic devices and other electronic devices and components.

Abstract: A flux composition which includes one or more organic compounds including one or more sulfonic acid groups, salts or anhydrides thereof is applied to tin or tin alloy deposits. The flux composition is then homogenized on the tin or tin alloy to inhibit tin or tin alloy oxidation and improve brightness of the tin or tin alloy.

Abstract: A catalyst solution includes a precious metal nanoparticle and a polymer having a carboxyl group and a nitrogen atom. The catalyst solution is useful for a catalyzing an electroless process for plating metal on non-conductive surfaces.

Abstract: A solution including a precious metal nanoparticle and a polymer polymerized from a monomer comprising at least a monomer having two or more carboxyl groups or carboxylic acid salt groups. The solution is useful for a catalyst for a process of electroless plating of a metal on non-conductive surface.

Abstract: A monomer has the Formula I: wherein R1, R2, and R3 are each independently a C1-30 monovalent organic group, and R1, R2, and R3 are each independently unsubstituted or include a halogen, nitrile, ether, ester, ketone, alcohol, or a combination comprising at least one of the foregoing functional groups; R4 includes H, F, C1-4 alkyl, or C1-4 fluoroalkyl; A is a single bond or a divalent linker group, wherein A is unsubstituted or substituted to include a halogen, nitrile, ether, ester, ketone, alcohol, or a combination comprising at least one of the foregoing functional groups; m and n are each independently an integer of 1 to 8; and x is 0 to 2n+2, and y is 0 to 2m+2.

Abstract: Provided are methods of trimming photoresist patterns. The methods involve coating a photoresist trimming composition over a photoresist pattern, wherein the trimming composition includes a matrix polymer, a thermal acid generator and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to generate an acid in the trimming composition from the thermal acid generator, thereby causing a change in polarity of the matrix polymer in a surface region of the photoresist pattern. The photoresist pattern is contacted with a developing solution to remove the surface region of the photoresist pattern. The methods find particular applicability in the formation of very fine lithographic features in the manufacture of semiconductor devices.

Abstract: A monomer has the Formula I: wherein R1, R2, and R3 are each independently a C1-30 monovalent organic group, and R1, R2, and R3 are each independently unsubstituted or include a halogen, nitrile, ether, ester, ketone, alcohol, or a combination comprising at least one of the foregoing functional groups; R4 includes H, F, C1-4 alkyl, or C1-4 fluoroalkyl; A is a single bond or a divalent linker group, wherein A is unsubstituted or substituted to include a halogen, nitrile, ether, ester, ketone, alcohol, or a combination comprising at least one of the foregoing functional groups; m and n are each independently an integer of 1 to 8; and x is 0 to 2n+2, and y is 0 to 2m+2.

Abstract: A photoacid generator includes those of formula (I): wherein each Ra in formula 1 is independently H, F, a C1-10 nonfluorinated organic group, C1-10 fluorinated organic group, or a combination comprising at least one of the foregoing, provided at least one Ra is F or a C1-10 fluorinated organic group, the C1-10 fluorinated and nonfluorinated organic groups each optionally comprising O, S, N, or a combination comprising at least one of the foregoing heteroatoms; L1 is a linking group comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing; G+ is an onium salt of the formula (II): wherein in formula (II), X is S or I, each R0 is independently C1-30 alkyl group; a polycyclic or monocyclic C3-30 cycloalkyl group; a polycyclic or monocyclic C4-30 aryl group; or a combination comprising at least one of the foregoing, provided at least one R0 is substituted where each R0 is a C6 monocyclic aryl group, and wherein when X is I, a is 2, and where X is S, a is 3,

Abstract: Provided are methods of trimming photoresist patterns. The methods involve coating a photoresist trimming composition over a photoresist pattern, wherein the trimming composition includes a matrix polymer, a free acid having fluorine substitution and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to cause a change in polarity of the resist polymer in a surface region of the photoresist pattern. The photoresist pattern is contacted with a developing solution to remove the surface region of the photoresist pattern. The methods find particular applicability in the formation of very fine lithographic features in the manufacture of semiconductor devices.

Abstract: A composition comprising the following: A) a cure catalyst selected from Formula A: [NR1?R2?R3?R4?]+X???(Formula A), R1?, R2?, R3?, R4? are each independently selected from hydrogen, alkyl, substituted alkyl, aryl, or substituted aryl; X is a monovalent anion, and wherein at least one of R1?, R2?, R3? or R4? is a methyl; and B) a prepolymer formed from a first composition comprising: Ra comprises one or more multiple bonds, provided that, if Ra comprises more than one multiple bond, these multiple bonds are not in a conjugated configuration; R1, R2, R3 are described herein; Rb is selected from H or a saturated group comprising alkyl, alkylene, or alkylidene; R4, R5, R6 are described herein; Rc comprises more than one multiple bond, and these multiple bonds are in a conjugated configuration; R7, R8, R9 described herein; and R10, R11, R12, R13 described herein.

Abstract: A molecular glass compound includes (A) a tetrameric reaction product of a specific aromatic compound having at least one hydroxy group, and a specific polycyclic or fused polycyclic aromatic aldehyde; and (B) an acid-removable protecting group as an adduct with the hydroxy group of the aromatic compound and/or a hydroxy group of the polycyclic or fused polycyclic aromatic aldehyde. A photoresist composition including the molecular glass compound, and a coated substrate including a layer of the photoresist composition are also disclosed.

Abstract: A method for depositing gallium using a gallium ink, comprising, as initial components: a gallium component comprising gallium; a stabilizing component; an additive; and, a liquid carrier; is provided comprising applying the gallium ink on the substrate; heating the applied gallium ink to eliminate the additive and the liquid carrier, depositing gallium on the substrate; and, optionally, annealing the deposited gallium.

Abstract: Provided are methods of forming photolithographic patterns by negative tone development. The methods employ a photoresist composition that includes a polymer having a unit of the following general formula (I): wherein: R1 represents hydrogen or a C1 to C3 alkyl group; a represents an integer from 1 to 3; and b represents 0 or 1. The methods find particular applicability in the manufacture of semiconductor devices.