Abstract: A vacuum coating system has a processing station (2) designed as a sputter-etching station, in which a high-frequency input electrode (25) is mounted between two substrate holders (23, 24), which carry the substrates (5, 6). Between the substrate holders (23, 24) and the high-frequency input electrode (25), a distance (a) is provided, which is smaller than the dark space distance.

Abstract: The invention relates to a microwave-enhanced sputtering configuration. In this sputtering configuration a magnetron cathode is disposed in a housing whose target opposes a substrate. At both sides of the target is provided in each instance a microwave inlet comprising a waveguide coupled with a cavity resonator. The waveguide is implemented so that the microwave extends parallel to the target surface. Around the target is looped a first magnet coil generating a first magnetic field, while around an L-shaped end of the waveguide is looped a second magnet coil.

Abstract: A crucible is situated in a vacuum chamber and provided with a feeder for granulate material, heating elements for melting the material, and a crystal puller above the crucible. Measuring elements provide signals for a controller including a fuzzy processor utilizing an empirically determined data field to output a signal for the material feeder.

Abstract: The invention relates to a device for generating a plasma by means of cathode sputtering and microwave irradiation. This device comprises a magnetron cathode over which is placed a microwave cavity resonator at the atmosphere side. At the vacuum side the device comprises laterally delimiting shielding sheets which on their inside are provided with a magnet which generates a magnetic field perpendicular to the surface of the target of the magnetron cathode.

Abstract: Apparatus for thin-coating processes for the treatment of substrates (8) of large surface area using a plasma (6) which is excited by microwaves (M) and the latter are coupled from a source by means of a waveguide (1) consisting of at least one hollow conductor (1), as well as by means of a horn antenna, into a plasma chamber (5), the waveguide (W) having a substantially rectangular aperture, an area is provided at the end of the hollow conductor (Q) with a slit-like constriction (Q), a rectangular horn (2) adjoins this area, and a compensation area (3) is provided between the largest aperture of the rectangular horn (2), as well as of the plasma chamber (5).

Abstract: The invention relates to a device for the generation of a plasma by means of circularly polarized high frequency waves. These high frequency waves are generated by means of voltages having a phase rotation of 90.degree..

Abstract: A circuit for adjusting the impedance of a plasma section to a high-frequency generator wherein three capacitors are connected in series between the high-frequency generator and an electrode of the plasma section; located between the generator and the electrode are two parallel oscillatory circuits.

Abstract: An apparatus for the generation of an inductively excited ion or plasma source includes an amplification system and a high frequency excitation coil which are coupled to form a self-starting free-running excitation oscillator.

Abstract: The invention concerns an on-off switch (1) for high-frequency currents. This switch (1) comprises a housing (2) made of an electrically non-conducting plastic and sealed at both its upper and its lower sides by electrically conducting contact parts (3,4). A metal bellows (14) is present in the housing (2) and is connected at one end to one of the contact parts, (4) and at its other end to a contact head (25). Using compressed air, the contact head (25) can be moved to make contact with the other contact part (3) or be removed away from it.

Abstract: The invention relates to a circuit configuration for the automatic tuning of a matching network (2) disposed between an electrical energy source (1) and a load (3). Herein two measured signals (U.sub.E, U.sub.1) are received from which are formed the magnitudes of three signals (U.sub.E, U.sub.1, I.sub.E) from which, in turn, the control values x.sub.1, x.sub.2 are determined for the setting of the matching network (2).

Abstract: The invention relates to a cooling device for circuit configurations in which high electrical energies are converted and specifically for electrical matching circuits with which the impedance of a plasma path is matched to a high frequency generator. Herein one or several coils are provided with a water cooling system in such a way that the cooling water is completely separated from the electromagnetic fields through metallic material. These coils consist of two tubes slid one into the other, wherein the cooling water is fed and drawn through the internal tube and between the two tubes so that it is completely within the field-free region.

Abstract: The invention concerns an electrical reversing switch, which is especially suited for switching of high-frequency electrodes. This switch has an over mounted pneumatic cylinder, which moves on pistons arranged on both sides, and thus produces electric contacts.

Abstract: The invention relates to a circuit configuration for the recognition of a plasma which is supplied with energy by means of an ac current of preset frequency. This ac current is detected by way of a suitable sensor and feeds to a highpass filter. This highpass filter permits those frequencies to pass through which lie above the preset frequency. The output signal of the highpass filter is rectified through a rectifier, freed of its residual ripple through a lowpass filter, and supplied to an evaluation device.