Abstract: Backside conductive layers with increased conductive efficiency can be provided for thermally developable materials by formulating hydrophilic metal oxide clusters in a hydrophobic environment using low shear mixing conditions. The dry thickness and coating weight of the conductive layer are thereby reduced.

Abstract: Thermally developable materials including photothermographic and thermographic materials have an outermost backside layer that includes a combination of a polysiloxane and a smectite clay that has been modified with a quaternary ammonium compound. The resulting outermost backside layers exhibit improved abrasion resistance. The materials can also include conductive layers underneath the outermost backside layer.

Abstract: The use of metal antimonates at high metal antimonate to binder ratios in buried backside conductive layers of thermographic and photothermographic materials allows the use of thin backside overcoat layers. The combination provides antistatic constructions having excellent antistatic properties that show less change in resistivity with changes in humidity. The thin backside overcoat layer serves to protect the buried antistatic layer.

Abstract: Thermally developable materials including photothermographic and thermographic materials having an outermost backside layer that includes amorphous silica particles having a narrow particle size distribution. The narrower particle size distribution provides reduced haze and increased surface roughness that reduces blocking and machine feeding at comparable weight percent. The materials can also include conductive layers underneath the outermost backside layer.

Abstract: The use of metal antimonates at high metal antimonate to binder ratios in buried backside conductive layers of thermographic and photothermographic materials allows the use of thin backside overcoat layers. The combination provides antistatic constructions having excellent antistatic properties that show less change in resistivity with changes in humidity. The thin backside overcoat layer serves to protect the buried antistatic layer.

Abstract: Backside conductive layers with increased conductive efficiency can be provided for thermally developable materials by formulating hydrophilic metal oxide clusters in a hydrophobic environment using low shear mixing conditions. The dry thickness and coating weight of the conductive layer are thereby reduced.

Abstract: Backside conductive layers with increased conductive efficiency can be provided for thermally developable materials by providing a buried conductive coating containing a lower molecular weight polyvinyl acetal binder (that is, a molecular weight of at least 8,000 and less than 30,000).

Abstract: Disclosed is an integral film comprising a transparent polymeric substrate having a surface bearing polymeric beads, wherein the swell ratio, the size, and the laydown of the beads are selected so as to provide both a one sided static friction coefficient of not more than 0.68 and an internal haze value of not more than 0.1. The film provides an improved combination of slip and optical properties.

Abstract: Disclosed is an integral film comprising a transparent polymeric substrate having a surface bearing polymeric beads, wherein the swell ratio, the size, and the laydown of the beads are selected so as to provide both a one sided static friction coefficient of not more than 0.68 and an internal haze value of not more than 0.1. The film provides an improved combination of slip and optical properties.

Abstract: A method is taught for debubbling a liquid composition containing entrained gas bubbles that increases the effectiveness of ultrasonic debubbling apparatus employed. The method comprises the steps of immersing an ultrasonic horn in water, the horn being contained within a vessel and coupled to a pair of transducers; adjusting an RF generator connected to the pair of transducers to produce a signal at or near a parallel resonance frequency of the pair of transducers; fixing the RF generator at a constant voltage level; and flowing the liquid composition to be debubbled through the vessel with the RF generator operating at constant voltage level and at a variable operating power level that varies with the viscosity of the liquid composition.

Abstract: A method is taught for debubbling a liquid composition containing entrained gas bubbles that increases the effectiveness of ultrasonic debubbling apparatus employed. The method comprises the steps of immersing an ultrasonic horn in water, the horn being contained within a vessel and coupled to a pair of transducers; adjusting an RF generator connected to the pair of transducers to produce a signal at or near a parallel resonance frequency of the pair of transducers; fixing the RF generator at a constant voltage level; and flowing the liquid composition to be debubbled through the vessel with the RF generator operating at constant voltage level and at a variable operating power level that varies with the viscosity of the liquid composition.

Abstract: A method and apparatus for evaluating the end cap round transducer horn assemblies used in debubbling operations wherein the ECR THA can be evaluated off-line at both high and low power and on-line by making electrical measurements on the ECR THA. The electrical measurements are used to characterize the physical condition of the piezoelectric ceramics of the THA. A test box is employed to practice the method. The test box is connected between the THA and a signal analyzer. Power is supplied to the THA and the electrical signals across the THA are sampled. The sampled electrical signals are transmitted to the signal analyzer while maintaining the amplitude and phase relationship thereof. The sampled electrical signals are used to generate an impedance trace for the particular THA. That impedance trace is compared to a model impedance trace. In such manner, it can be determined whether the ECR THA is operational.

Abstract: A method and apparatus for evaluating the end cap round transducer horn assemblies used in debubbling operations wherein the ECR THA can be evaluated off-line at both high and low power and on-line by making electrical measurements on the ECR THA. The electrical measurements are used to characterize the physical condition of the piezoelectric ceramics of the THA. A test box is employed to practice the method. The test box is connected between the THA and a signal analyzer. Power is supplied to the THA and the electrical signals across the THA are sampled. The sampled electrical signals are transmitted to the signal analyzer while maintaining the amplitude and phase relationship thereof. The sampled electrical signals are used to generate an impedance trace for the particular THA. That impedance trace is compared to a model impedance trace. In such manner, it can be determined whether the ECR THA is operational.

Abstract: A method and apparatus for evaluating the end cap round transducer horn assemblies used in debubbling operations wherein the ECR THA can be evaluated off-line at both high and low power and on-line by making electrical measurements on the ECR THA. The electrical measurements are used to characterize the physical condition of the piezoelectric ceramics of the THA. A test box is employed to practice the method. The test box is connected between the THA and a signal analyzer. Power is supplied to the THA and the electrical signals across the THA are sampled. The sampled electrical signals are transmitted to the signal analyzer while maintaining the amplitude and phase relationship thereof. The sampled electrical signals are used to generate an impedance trace for the particular THA. That impedance trace is compared to a model impedance trace. In such manner, it can be determined whether the ECR THA is operational.

Abstract: A method and apparatus for evaluating the end cap round transducer horn assemblies used in debubbling operations wherein the ECR THA can be evaluated off-line at both high and low power and on-line by making electrical measurements on the ECR THA. The electrical measurements are used to characterize the physical condition of the piezoelectric ceramics of the THA. A test box is employed to practice the method. The test box is connected between the THA and a signal analyzer. Power is supplied to the THA and the electrical signals across the THA are sampled. The sampled electrical signals are transmitted to the signal analyzer while maintaining the amplitude and phase relationship thereof. The sampled electrical signals are used to generate an impedance trace for the particular THA. That impedance trace is compared to a model impedance trace. In such manner, it can be determined whether the ECR THA is operational.

Abstract: A method and apparatus for evaluating the end cap round transducer horn assemblies used in debubbling operations wherein the ECR THA can be evaluated off-line at both high and low power and on-line by making electrical measurements on the ECR THA. The electrical measurements are used to characterize the physical condition of the piezoelectric ceramics of the THA. A test box is employed to practice the method. The test box is connected between the THA and a signal analyzer. Power is supplied to the THA and the electrical signals across the THA are sampled. The sampled electrical signals are transmitted to the signal analyzer while maintaining the amplitude and phase relationship thereof. The sampled electrical signals are used to generate an impedance trace for the particular THA. That impedance trace is compared to a model impedance trace. In such manner, it can be determined whether the ECR THA is operational.

Abstract: A method and apparatus for evaluating the end cap round transducer horn assemblies used in debubbling operations wherein the ECR THA can be evaluated off-line at both high and low power and on-line by making electrical measurements on the ECR THA. The electrical measurements are used to characterize the physical condition of the piezoelectric ceramics of the THA. A test box is employed to practice the method. The test box is connected between the THA and a signal analyzer. Power is supplied to the THA and the electrical signals across the THA are sampled. The sampled electrical signals are transmitted to the signal analyzer while maintaining the amplitude and phase relationship thereof. The sampled electrical signals are used to generate an impedance trace for the particular THA. That impedance trace is compared to a model impedance trace. In such manner, it can be determined whether the ECR THA is operational.

Abstract: Group II-VI thin film transistors, a method of making same and a monolithic device containing a detector array as well as transistors coupled thereto wherein, according to a first embodiment, there is provided a group II-VI insulating substrate, a doped layer of a group II-VI semiconductor material disposed over the substrate, an insulating gate region disposed over the doped layer, a pair of spaced contacts on the doped layer providing source and drain contacts, a gate contact disposed over the insulating gate region, an insulating layer disposed over exposed regions of the substrate, doped layer, insulating gate region and contacts and metallization disposed on the insulating layer and extending through the insulating layer to the contacts. The thickness of the doped layer is less than the maximum depletion region thickness thereof.

Abstract: Group II-VI thin film transistors, a method of making same and a monolithic device containing a detector array as well as transistors coupled thereto wherein, according to a first embodiment, there is provided a group II-VI insulating substrate, a doped layer of a group II-VI semiconductor material disposed over the substrate, an insulating gate region disposed over the doped layer, a pair of spaced contacts on the doped layer providing source and drain contacts, a gate contact disposed over the insulating gate region, an insulating layer disposed over exposed regions of the substrate, doped layer, insulating gate region and contacts and metallization disposed on the insulating layer and extending through the insulating layer to the contacts. The thickness of the doped layer is less than the maximum depletion region thickness thereof.

Abstract: Films of Hg.sub.1-x Cd.sub.x Te grown at low temperatures by MBE or MOCVD are homogenized by annealing at about 350.degree. C. for 1.25 to 3 hours.