Abstract: An electro-optical device is provided. The device comprises an optical signal source, which is configured to generate a modulated optical signal having a first extinction ratio. The device further comprises an absorber configured to receive the modulated signal and generate an optical output signal from the modulated signal, wherein the output optical signal has a second extinction ratio, which is larger than the first extinction ratio.

Abstract: A dummy light module includes a dual semiconductor optical amplifier (SOA) light source configured to emit two substantially identical light emissions. The two light emissions include a first light emission and a second light emission, both having a first polarization. The dummy light module further includes a polarization rotator configured to rotate the second light emission to a second polarization, and a polarization beam combiner configured to generate dummy light by combining the first light emission with the first polarization and the second light emission with the second polarization.

Abstract: This application describes a wavelength-tunable laser apparatus, which reduces complexity of wavelength tuning of a laser. The laser includes a reflective gain unit, an optical phase shifter, a coupler, and a passive filter unit array. Furthermore, an output port of the reflective gain unit is connected to an input port of the optical phase shifter, an output port of the optical phase shifter is connected to an input port of the coupler, a first output port of the coupler is connected to an input port of the passive filter unit array, and a second output port of the coupler is an output port of the laser. The passive filter unit array includes a plurality of passive filter units, where any two of the plurality of passive filter units have different wavelength tuning ranges, and each filter unit has a linearly tunable wavelength.

Abstract: A laser system is provided that includes a modulated laser, which is configured to generate an amplitude modulated laser signal, comprising a first amplitude modulation. The first amplitude modulation is based on a data signal. Moreover, the laser system includes an optical modulator, which is configured to receive the amplitude modulated laser signal as an input signal, and modulate the amplitude modulated laser signal with a second amplitude modulation, based on the data signal, resulting in an amplitude modulated output laser signal.

Abstract: The optoelectronic device includes a matrix of optoelectronic components including semiconductor optical amplifiers SOAs, the semiconductor optical amplifiers SOAs containing an active layer of gallium nitride GaN having multiple InGaN/GaAsN or InGaN/AlGaN quantum wells on a substrate of p-doped gallium nitride and covered with a layer of n-doped gallium nitride. The p-doped gallium nitride GaN substrate forms a column of p-GaN covered with a layer of an insulator in biocompatible material. The device can include a matrix having multiple electronic components of different heights. The optoelectronic component can be a photodiode or a semiconductor optical amplifier SOA. This optoelectronic device can be used in epiretinal or subretinal prostheses. A single epiretinal or subretinal prosthesis can include a matrix of photodiodes and a matrix of semiconductor optical amplifiers SOAs.

Abstract: This application describes a wavelength-tunable laser apparatus, which reduces complexity of wavelength tuning of a laser. The laser includes a reflective gain unit, an optical phase shifter, a coupler, and a passive filter unit array. Furthermore, an output port of the reflective gain unit is connected to an input port of the optical phase shifter, an output port of the optical phase shifter is connected to an input port of the coupler, a first output port of the coupler is connected to an input port of the passive filter unit array, and a second output port of the coupler is an output port of the laser. The passive filter unit array includes a plurality of passive filter units, where any two of the plurality of passive filter units have different wavelength tuning ranges, and each filter unit has a linearly tunable wavelength.

Abstract: The optoelectronic device includes a matrix of optoelectronic components including semiconductor optical amplifiers SOAs, the semiconductor optical amplifiers SOAs containing an active layer of gallium nitride GaN having multiple InGaN/GaAsN or InGaN/AlGaN quantum wells on a substrate of p-doped gallium nitride and covered with a layer of n-doped gallium nitride. The p-doped gallium nitride GaN substrate forms a column of p-GaN covered with a layer of an insulator in biocompatible material. The device can include a matrix having multiple electronic components of different heights. The optoelectronic component can be a photodiode or a semiconductor optical amplifier SOA. This optoelectronic device can be used in epiretinal or subretinal prostheses. A single epiretinal or subretinal prosthesis can include a matrix of photodiodes and a matrix of semiconductor optical amplifiers SOAs.

Abstract: An amplification device includes an element for splitting an input optical signal into first and second optical signals having first and second polarization modes, first and second amplification stages each including polarized SOAs for amplifying the first and second optical signals depending on driving currents, an intermediate processing stage for compensating optical characteristics of the optical gain bandwidth of the first amplification stage depending on driving currents, an element for combining the first and second optical signals outputted by the second amplification stage to produce an output optical signal, and a control means producing the driving currents depending on information representative of powers of the first and second optical signals before the polarized SOAs of each amplification stage and on a targeted power of the output optical signal.

Abstract: An amplification device includes an element for splitting an input optical signal into first and second optical signals having first and second polarization modes, first and second amplification stages each including polarized SOAs for amplifying the first and second optical signals depending on driving currents, an intermediate processing stage for compensating optical characteristics of the optical gain bandwidth of the first amplification stage depending on driving currents, an element for combining the first and second optical signals outputted by the second amplification stage to produce an output optical signal, and a control means producing the driving currents depending on information representative of powers of the first and second optical signals before the polarized SOAs of each amplification stage and on a targeted power of the output optical signal.

Abstract: The optoelectronic device includes a matrix of optoelectronic components including semiconductor optical amplifiers SOAs, the semiconductor optical amplifiers SOAs containing an active layer of gallium nitride GaN having multiple InGaN/GaAsN or InGaN/AlGaN quantum wells on a substrate of p-doped gallium nitride and covered with a layer of n-doped gallium nitride. The p-doped gallium nitride GaN substrate forms a column of p-GaN covered with a layer of an insulator in biocompatible material. The device can include a matrix having multiple electronic components of different heights. The optoelectronic component can be a photodiode or a semiconductor optical amplifier SOA. This optoelectronic device can be used in epiretinal or subretinal prostheses. A single epiretinal or subretinal prosthesis can include a matrix of photodiodes and a matrix of semiconductor optical amplifiers SOAs.

Abstract: This application relates to a laser assembly displaying self-heating mitigation. The laser assembly comprises a semiconductor laser and a drive unit for driving the semiconductor laser. The semiconductor laser includes a first semiconductor region for generating or modulating an optical signal in response to a first drive current that is applied to the first semiconductor region, and a heating region that is arranged in proximity to the first semiconductor region and electrically insulated from the first semiconductor region. The drive unit is configured to generate the first drive current and a second drive current, apply the first drive current to the first semiconductor region during respective transmission periods of the semiconductor laser, and apply the second drive current to the heating region in intervals between successive transmission periods.

Abstract: The telecommunications network node linking a metropolitan area network, including at least one optical link connecting the nodes, with at least one access network, includes an electronic card that enables the aggregation of traffic from multiple access networks, a transmitter capable of receiving an electrical signal from the electronic card and of transmitting an optical packet to the metropolitan area network, a circulator capable of extracting a stream of multiplexed optical packets from the optical link and of inserting a stream of multiplexed optical packets into the optical link, and a reflective switching matrix receiving a stream of multiplexed optical packets from among which it selects and detects those intended for the access network.

Abstract: The present invention concerns a method for controlling the emitting wavelength of a laser source (10) for a passive optical network, the laser source (10) comprising: a first Bragg mirror (12), a second Bragg mirror (14), a cavity (16) delimited by both Bragg mirrors (12, 14), the cavity (16) comprising an optical filter (18) and an active medium (20), the method comprising the steps of: measuring the temperature of the active medium (20), setting the temperature of the optical filter (18) in accordance with the measured temperature of the active medium (20), the temperature of the optical filter (18) being higher than the measured temperature.

Abstract: An optical device includes a first semiconductor optical amplifier having an active region embedded into a waveguide and including a first section intended for amplifying optical signals when it is crossed by a first current smaller than a chosen value inducing amplification over a large optical bandwidth, and a second section intended for amplifying the optical signals amplified by the first section when it is crossed by a second current greater than this chosen value, to deliver output optical signals with a large power.

Abstract: The telecommunications network node linking a metropolitan area network, including at least one optical link connecting the nodes, with at least one access network, includes an electronic card that enables the aggregation of traffic from multiple access networks, a transmitter capable of receiving an electrical signal from the electronic card and of transmitting an optical packet to the metropolitan area network, a circulator capable of extracting a stream of multiplexed optical packets from the optical link and of inserting a stream of multiplexed optical packets into the optical link, and a reflective switching matrix receiving a stream of multiplexed optical packets from among which it selects and detects those intended for the access network.

Abstract: An optical transceiver (1) comprises: a ring resonator (6), a first waveguide (2) comprising, in succession, an input-output section (22), a coupling section (20) coupled to a first portion of the ring resonator and an amplification section (21) coupled to a first optical reflector (4) suitable for reflecting light toward the coupling section, a second waveguide (5) comprising, in succession, a reception section (52), a coupling section (50) coupled to a second portion of the ring resonator and a reflection section coupled to a second optical reflector (4) suitable for reflecting light toward the coupling section, a gain medium (7) arranged in the amplification section of the first waveguide and suitable for producing a stimulated light transmission, and an optical detector (8) coupled to the reception section of the second waveguide.

Abstract: The present invention concerns a method for controlling the emitting wavelength of a laser source (10) for a passive optical network, the laser source (10) comprising: a first Bragg mirror (12), a second Bragg mirror (14), a cavity (16) delimited by both Bragg mirrors (12, 14), the cavity (16) comprising an optical filter (18) and an active medium (20), the method comprising the steps of: measuring the temperature of the active medium (20), setting the temperature of the optical filter (18) in accordance with the measured temperature of the active medium (20), the temperature of the optical filter (18) being higher than the measured temperature.

Abstract: A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a deep ridge optical receiver comprising such structure are disclosed.

Abstract: The present document relates to passive optical networks (PON). More particularly but not exclusively, it relates to the use of a reflective semiconductor optical amplifier (RSOA) for amplifying signals in a Gigabit PON (GPON) or WDM-PON. An apparatus configured to amplify light at different wavelengths in an optical network is described. The apparatus comprises a first active material configured to amplify light at a first wavelength and a second active material configured to amplify light at a second wavelength. Furthermore, the apparatus comprises a first reflector which separates the first and second active materials and which is configured to reflect light at the first wavelength and which is configured to be substantially transparent to light at the second wavelength. In addition, the apparatus comprises a second reflector adjacent the second active material opposite to the first reflector which is configured to reflect light at the second wavelength.

Abstract: An optical transceiver (1) comprises: a ring resonator (6), a first waveguide (2) comprising, in succession, an input-output section (22), a coupling section (20) coupled to a first portion of the ring resonator and an amplification section (21) coupled to a first optical reflector (4) suitable for reflecting light toward the coupling section, a second waveguide (5) comprising, in succession, a reception section (52), a coupling section (50) coupled to a second portion of the ring resonator and a reflection section coupled to a second optical reflector (4) suitable for reflecting light toward the coupling section, a gain medium (7) arranged in the amplification section of the first waveguide and suitable for producing a stimulated light transmission, and an optical detector (8) coupled to the reception section of the second waveguide.