Abstract: A photovoltaic module, having: a substrate, a plurality of photovoltaic structures that are electrically connected to one another and extend over the substrate, each of which comprises at least one photovoltaic cell, and a multilayer electrical connection structure sandwiched between the substrate and the plurality of photovoltaic structures, forming at least one bypass diode for each photovoltaic structure, each bypass diode having: two electrodes electrically connected to the terminals of opposite polarity of the corresponding photovoltaic structure, at least one of the two electrodes extending at least partially underneath the corresponding photovoltaic structure, and a semiconductor portion in contact with the two electrodes via two separate surfaces.

Abstract: A method is provided for fabricating and inspecting a photovoltaic assembly including a base, at least one photovoltaic module, and at least one adhesion layer based on a crosslinkable polymer material. The method includes depositing the at least one adhesion layer on the base; an assembly step; a partial crosslinking step; an electrical connection step; inspecting for mechanical and electrical functioning; in the event of correct functioning being detected, a crosslinking finalization step; in the event of incorrect functioning being detected removing at least one defective photovoltaic module.

Abstract: A photovoltaic module, having: a substrate, a plurality of photovoltaic structures that are electrically connected to one another and extend over the substrate, each of which comprises at least one photovoltaic cell, and a multilayer electrical connection structure sandwiched between the substrate and the plurality of photovoltaic structures, forming at least one bypass diode for each photovoltaic structure, each bypass diode having: two electrodes electrically connected to the terminals of opposite polarity of the corresponding photovoltaic structure, at least one of the two electrodes extending at least partially underneath the corresponding photovoltaic structure, and a semiconductor portion in contact with the two electrodes via two separate surfaces.

Abstract: The invention relates to a process for the preparation of a semiconductor material comprising at least one entirely monocrystalline semiconductor layer, said process comprising the steps of preparation of the surface of a first substrate to receive a monocrystalline silicon layer; deposition by Plasma-Enhanced Chemical Vapor Deposition (PECVD) of a layer of monocrystalline silicon by epitaxial growth with a growth rate gradient on the silicon layer monocrystalline obtained in step (i); and epitaxial growth of a monocrystalline layer of a semiconductor material on the monocrystalline silicon layer obtained in step (ii), to thus obtain a material comprising at least one entirely monocrystalline semiconductor layer. The invention also relates to a multilayer material comprising a monocrystalline layer of semiconductor material.

Abstract: A method is provided for fabricating and inspecting a photovoltaic assembly including a base, at least one photovoltaic module, and at least one adhesion layer based on a crosslinkable polymer material. The method includes depositing the at least one adhesion layer on the base; an assembly step; a partial crosslinking step; an electrical connection step; inspecting for mechanical and electrical functioning; in the event of correct functioning being detected, a crosslinking finalization step; in the event of incorrect functioning being detected removing at least one defective photovoltaic module.

Abstract: The invention relates to a process for the preparation of a semiconductor material comprising at least one entirely monocrystalline semiconductor layer, said process comprising the steps of preparation of the surface of a first substrate to receive a monocrystalline silicon layer; deposition by Plasma-Enhanced Chemical Vapor Deposition (PECVD) of a layer of monocrystalline silicon by epitaxial growth with a growth rate gradient on the silicon layer monocrystalline obtained in step (i); and epitaxial growth of a monocrystalline layer of a semiconductor material on the monocrystalline silicon layer obtained in step (ii), to thus obtain a material comprising at least one entirely monocrystalline semiconductor layer. The invention also relates to a multilayer material comprising a monocrystalline layer of semiconductor material.