Patents by Inventor Ronald Cornelis Gerard Naber
Ronald Cornelis Gerard Naber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200279970Abstract: The method of manufacturing a passivated solar cell comprises the steps of: (1) providing an electrically conductive region at a first side of a semiconductor substrate provided with a textured surface, which comprises dopant atoms of p-type conductivity, and particularly boron; (2) providing a passivation by applying a tunnelling dielectric layer and a polysilicon layer and carrying out an anneal so as to diffuse dopant atoms from the electrically conductive region into the polysilicon layer. A hydrogenated silicon nitride or silicon oxynitride layer may be present on top of the polysilicon layer. The resulting solar cell has a significantly increased lifetime of charge carriers and therewith enhanced open-circuit voltage.Type: ApplicationFiled: February 12, 2018Publication date: September 3, 2020Inventors: Ronald Cornelis Gerard Naber, Johannes Reinder Marc Luchies, Martijn Lenes
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Publication number: 20180277693Abstract: The process for manufacturing a solar cell provides for so-called passivated contacts based on a layer of polysilicon layer onto a tunnel dielectric, such as a tunnel oxide. Herein, a treatment is carried out on the polysilicon layer as deposited by ion implantation so as to render to amorphized. This ion implantation simultaneously allows the provision of doped regions, particularly of phosphorus. Selectively recrystallized areas and untreated areas are then removed by etching, including unintentionally deposited polysilicon at the first side of the substrate. Further process steps may be carried out prior to or subsequent to this provision of a patterned and ion implanted polysilicon layer, so as to provide for instance a cell with an metal wrap-through (MWT) structure.Type: ApplicationFiled: September 30, 2016Publication date: September 27, 2018Inventor: Ronald Cornelis Gerard Naber
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Publication number: 20180277701Abstract: The method of manufacturing of a solar cell comprises the steps of: providing a semiconductor substrate (100) comprising an electrically conductive region (11) extending at a first side thereof; and providing a tunnelling oxide (13) by thermal oxidation followed by a boron doped polysilicon LPCVD deposited layer on the second side of the semiconductor substrate. Herein, the provision of the doped polysilicon layer (20) comprises depositing a multilayer stack of first sublayers (21, 22, 23) of silicon and second sublayers (31, 32) of boron dopant in alternation, and subsequent annealing. Thereafter the solar cell is finalized with passivation layers on at least the first side and suitable metallization layers on the emitter and base regions.Type: ApplicationFiled: September 28, 2016Publication date: September 27, 2018Applicant: Tempress IP B.V.Inventors: Martijn Lenes, Ronald Cornelis Gerard Naber, Johannes Reinder Marc Luchies, Albert Hasper
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Patent number: 9490387Abstract: Methods of manufacturing a solar cell are provided. Aspects of embodiments of the methods include introducing charge carriers into a substrate on a first side by ion implantation to produce an amorphized region followed by selectively recrystallizing material in part of the amorphized region to define a first recrystallized subregion and then at least partially removing recrystallized material from the first subregion. An apparatus for carrying out said method and a resulting solar cell having surface topology are also provided.Type: GrantFiled: May 3, 2013Date of Patent: November 8, 2016Assignee: Tempress IP B.V.Inventor: Ronald Cornelis Gerard Naber
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Patent number: 9224906Abstract: The invention relates to a method for manufacturing a solar cell from a semiconductor substrate of a first conductivity type, the semiconductor substrate having a front side and a back side, the method comprising in this sequence: creating by diffusion of a dopant of a second conductivity type a second conductivity-type doped layer in the front side and the back side, during diffusion forming of a dopant containing glassy layer on the front and back side; removing the second conductivity-type doped layer and the dopant containing glassy layer from the back side by a single sided etching process, while maintaining the dopant-containing glassy layer in the front side; creating a Back Surface Field (BSF) layer of the first conductivity type on the back side by implantation of a dopant of the first conductivity type into the back side; removing the dopant containing glassy layer from the front side of said substrate by an etching process; surface oxidation by heating said substrate for a predetermined period of tType: GrantFiled: March 18, 2013Date of Patent: December 29, 2015Assignee: Tempress IP B.V.Inventor: Ronald Cornelis Gerard Naber
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Patent number: 9112071Abstract: The manufacturing of the solar cell comprises the etching of a via hole (2) with a tapered shape such that the diameter (A) at a first side (1a) of the substrate (1), intended as a main side for capturing incident light, is larger than the diameter (B) at the second side (1b) of the substrate (1). The first doped region (3) extends to a first surface (11) in the via hole (2). The second doped region (5) is present at the second side (1b) of the substrate (1) and is suitably formed by ion implantation. The resulting solar cell has an appropriate isolation between first doped region (3) and second doped region (5) over a second surface (12) in the via hole (2) and is suitably provided with a deep junction between the first doped region (3) and dopant in the substrate (1).Type: GrantFiled: June 5, 2013Date of Patent: August 18, 2015Assignee: Tempress IP B.V.Inventors: Ronald Cornelis Gerard Naber, Johannes Reinder Marc Luchies
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Patent number: 9034670Abstract: A method (100; 100a; 100b; 100c) for manufacturing a solar cell from a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a front surface (2) and a back surface (3). The method includes in a sequence: texturing (102) the front surface to create a textured front surface (2a); creating (103) by diffusion of a dopant of the first conductivity type a first conductivity-type doped layer (2c) in the textured front surface and a back surface field layer (4) of the first conductivity type in the back surface; removing (105; 104a) the first conductivity-type doped layer from the textured front surface by an etching process adapted for retaining texture of the textured front surface; creating (106) a layer of a second conductivity type (6) on the textured front surface by diffusion of a dopant of the second conductivity type into the textured front surface.Type: GrantFiled: August 24, 2010Date of Patent: May 19, 2015Assignee: Stichting Energieonderzoek Centrum NederlandInventors: Paul Cornelis Barton, Ronald Cornelis Gerard Naber, Arno Ferdinand Stassen
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Publication number: 20150114462Abstract: The manufacturing of the solar cell comprises the etching of a via hole (2) with a tapered shape such that the diameter (A) at a first side (1a) of the substrate (1), intended as a main side for capturing incident light, is larger than the diameter (B) at the second side (1b) of the substrate (1). The first doped region (3) extends to a first surface (11) in the via hole (2). The second doped region (5) is present at the second side (1b) of the substrate (1) and is suitably formed by ion implantation. The resulting solar cell has an appropriate isolation between first doped region (3) and second doped region (5) over a second surface (12) in the via hole (2) and is suitably provided with a deep junction between the first doped region (3) and dopant in the substrate (1).Type: ApplicationFiled: June 5, 2013Publication date: April 30, 2015Inventors: Ronald Cornelis Gerard Naber, Johannes Reinder Marc Luchies
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Publication number: 20150040974Abstract: The method of manufacturing a solar cell, which comprises a semiconductor substrate (1) with a first side (1a) and an opposed second side (1b), at which first side an active region doped with charge carriers of a first conductivity type is defined selectively. The method comprises introducing said charge carriers into the substrate (1) on said first side (1a) by ion implantation in an implantation step at a dose level that induces surface amorphization, therewith forming an amorphized region. Thereafter, material in part of the amorphized region is selectively recrystallized to define a first, recrystallized subregion (5), a remaining part of the amorphized region defining a second subregion (15). Subsequently, the recrystallized material of the first subregion (5) is at least partially removed, therewith creating the selectively defined active region and inducing a surface topology between the at least partially removed first subregion (5) and the second subregion (15).Type: ApplicationFiled: May 3, 2013Publication date: February 12, 2015Inventor: Ronald Cornelis Gerard Naber
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Publication number: 20150011036Abstract: The invention relates to a method for manufacturing a solar cell from a semiconductor substrate of a first conductivity type, the semiconductor substrate having a front side and a back side, the method comprising in this sequence: creating by diffusion of a dopant of a second conductivity type a second conductivity-type doped layer in the front side and the back side, during diffusion forming of a dopant containing glassy layer on the front and back side; removing the second conductivity-type doped layer and the dopant containing glassy layer from the back side by a single sided etching process, while maintaining the dopant-containing glassy layer in the front side; creating a Back Surface Field (BSF) layer of the first conductivity type on the back side by implantation of a dopant of the first conductivity type into the back side; removing the dopant containing glassy layer from the front side of said substrate by an etching process; surface oxidation by heating said substrate for a predetermined period of tType: ApplicationFiled: March 18, 2013Publication date: January 8, 2015Inventor: Ronald Cornelis Gerard Naber
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Patent number: 8623688Abstract: A method for manufacturing a solar cell from a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a front surface (2) and a back surface (3). The method includes in a sequence: texturing (102) the front surface to create a textured front surface (2a); creating (103) by diffusion of a dopant of the first conductivity type a first conductivity-type doped layer (2c) in the textured front surface and a back surface field layer (4) of the first conductivity type in the back surface; removing (105; 104a) the first conductivity-type doped layer from the textured front surface by an etching process adapted for retaining texture of the textured front surface; creating (106) a layer of a second conductivity type (6) on the textured front surface by diffusion of a dopant of the second conductivity type into the textured front surface.Type: GrantFiled: August 24, 2010Date of Patent: January 7, 2014Assignee: Stichting Energieonderzoek Centrum NederlandInventors: Lambert Johan Geerligs, Gaofei Li, Paul Cornelis Barton, Ronald Cornelis Gerard Naber, Arno Ferdinand Stassen, Zhiyan Hu
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Publication number: 20120204948Abstract: A method (100; 100a; 100b; 100c) for manufacturing a solar cell from a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a front surface (2) and a back surface (3). The method includes in a sequence: texturing (102) the front surface to create a textured front surface (2a); creating (103) by diffusion of a dopant of the first conductivity type a first conductivity-type doped layer (2c) in the textured front surface and a back surface field layer (4) of the first conductivity type in the back surface; removing (105; 104a) the first conductivity-type doped layer from the textured front surface by an etching process adapted for retaining texture of the textured front surface; creating (106) a layer of a second conductivity type (6) on the textured front surface by diffusion of a dopant of the second conductivity type into the textured front surface.Type: ApplicationFiled: August 24, 2010Publication date: August 16, 2012Inventors: Paul Cornelis Barton, Ronald Cornelis Gerard Naber, Arno Ferdinand Stassen
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Publication number: 20120181667Abstract: A method for manufacturing a solar cell from a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a front surface (2) and a back surface (3). The method includes in a sequence: texturing (102) the front surface to create a textured front surface (2a); creating (103) by diffusion of a dopant of the first conductivity type a first conductivity-type doped layer (2c) in the textured front surface and a back surface field layer (4) of the first conductivity type in the back surface; removing (105; 104a) the first conductivity-type doped layer from the textured front surface by an etching process adapted for retaining texture of the textured front surface; creating (106) a layer of a second conductivity type (6) on the textured front surface by diffusion of a dopant of the second conductivity type into the textured front surface.Type: ApplicationFiled: August 24, 2010Publication date: July 19, 2012Applicant: STICHTING ENERGIEONDERZOEK CENTRUM NEDERLANDInventors: Lambert Johan Geerligs, Gaofei Li, Paul Cornelis Barton, Ronald Cornelis Gerard Naber, Arno Ferdinand Stassen, Zhiyan Hu