Patents by Inventor Ronald Patrick Huemoeller

Ronald Patrick Huemoeller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11901335
    Abstract: Methods and systems for a semiconductor package with high routing density routing patch are disclosed and may include a semiconductor die bonded to a substrate and a high routing density patch bonded to the substrate and to the semiconductor die, wherein the high routing density patch comprises a denser trace line density than the substrate. The high routing density patch can be a silicon-less-integrated module (SLIM) patch, comprising a BEOL portion, and can be TSV-less. Metal contacts may be formed on a second surface of the substrate. A second semiconductor die may be bonded to the substrate and to the high routing density patch. The high routing density patch may provide electrical interconnection between the semiconductor die. The substrate may be bonded to a silicon interposer. The high routing density patch may have a thickness of 10 microns or less. The substrate may have a thickness of 10 microns or less.
    Type: Grant
    Filed: March 29, 2022
    Date of Patent: February 13, 2024
    Assignee: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.
    Inventors: Michael Kelly, Ronald Patrick Huemoeller, David Jon Hiner
  • Publication number: 20240021571
    Abstract: Methods for bonding semiconductor surfaces leverage hybrid bonding processes to enable heterogeneous integration architectures. In some embodiments, the methods may comprise forming a semiconductor structure on a silicon-based substrate with a first set of exposed conductive connections on a top surface of the semiconductor structure. The first set of exposed conductive connections having a pitch of less than approximately 10 microns. Forming an advanced rectangular substrate panel with a second set of exposed conductive connections. The second set of exposed conductive connections having a pitch of less than approximately 10 microns. Bonding a top surface of the semiconductor structure to a top surface of the advanced rectangular substrate panel using a hybrid bonding process to bond the semiconductor structure to the advanced rectangular substrate panel.
    Type: Application
    Filed: July 18, 2022
    Publication date: January 18, 2024
    Inventors: Anup PANCHOLI, Marvin Louis BERNT, Ronald Patrick HUEMOELLER, Avinash SHANTARAM, Vincent DICAPRIO
  • Patent number: 11848214
    Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.
    Type: Grant
    Filed: July 27, 2021
    Date of Patent: December 19, 2023
    Assignee: Amkor Technology Singapore Holding Pte. Ltd.
    Inventors: Ronald Patrick Huemoeller, Sukianto Rusli, David Jon Hiner
  • Publication number: 20230040553
    Abstract: Methods and systems for a semiconductor device package with a die to interposer wafer first bond are disclosed and may include bonding a plurality of semiconductor die comprising electronic devices to an interposer wafer, and applying an underfill material between the die and the interposer wafer. Methods and systems for a semiconductor device package with a die-to-packing substrate first bond are disclosed and may include bonding a first semiconductor die to a packaging substrate, applying an underfill material between the first semiconductor die and the packaging substrate, and bonding one or more additional die to the first semiconductor die. Methods and systems for a semiconductor device package with a die-to-die first bond are disclosed and may include bonding one or more semiconductor die comprising electronic devices to an interposer die.
    Type: Application
    Filed: August 19, 2022
    Publication date: February 9, 2023
    Inventors: Michael G. Kelly, Ronald Patrick Huemoeller, Won Chul Do, David Jon Hiner
  • Patent number: 11545405
    Abstract: A fingerprint sensor package, including a sensing side for sensing fingerprint information and a separate connection side for electrically connecting the fingerprint sensor package to a host device, is disclosed. The fingerprint sensor package can also include a sensor integrated circuit facing the sensing side and substantially surrounded by a fill material. The fill material includes vias at peripheral locations around the sensor integrated circuit. The fingerprint sensor package can further include a redistribution layer on the sensing side which redistributes connections of the sensor integrated circuit to the vias. The connections can further be directed through the vias to a ball grid array on the connection side. Some aspects also include electrostatic discharge traces positioned at least partially around a perimeter of the connection side. Methods of manufacturing are also disclosed.
    Type: Grant
    Filed: April 24, 2020
    Date of Patent: January 3, 2023
    Assignee: Amkor Technology Singapore Holding Pte. Ltd.
    Inventors: Ronald Patrick Huemoeller, David Bolognia, Robert Francis Darveaux, Brett Arnold Dunlap
  • Patent number: 11424155
    Abstract: Methods and systems for a semiconductor device package with a die to interposer wafer first bond are disclosed and may include bonding a plurality of semiconductor die comprising electronic devices to an interposer wafer, and applying an underfill material between the die and the interposer wafer. Methods and systems for a semiconductor device package with a die-to-packing substrate first bond are disclosed and may include bonding a first semiconductor die to a packaging substrate, applying an underfill material between the first semiconductor die and the packaging substrate, and bonding one or more additional die to the first semiconductor die. Methods and systems for a semiconductor device package with a die-to-die first bond are disclosed and may include bonding one or more semiconductor die comprising electronic devices to an interposer die.
    Type: Grant
    Filed: July 10, 2020
    Date of Patent: August 23, 2022
    Assignee: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.
    Inventors: Michael G. Kelly, Ronald Patrick Huemoeller, Won Chul Do, David Jon Hiner
  • Publication number: 20220223563
    Abstract: Methods and systems for a semiconductor package with high routing density routing patch are disclosed and may include a semiconductor die bonded to a substrate and a high routing density patch bonded to the substrate and to the semiconductor die, wherein the high routing density patch comprises a denser trace line density than the substrate. The high routing density patch can be a silicon-less-integrated module (SLIM) patch, comprising a BEOL portion, and can be TSV-less. Metal contacts may be formed on a second surface of the substrate. A second semiconductor die may be bonded to the substrate and to the high routing density patch. The high routing density patch may provide electrical interconnection between the semiconductor die. The substrate may be bonded to a silicon interposer. The high routing density patch may have a thickness of 10 microns or less. The substrate may have a thickness of 10 microns or less.
    Type: Application
    Filed: March 29, 2022
    Publication date: July 14, 2022
    Inventors: Michael Kelly, Ronald Patrick Huemoeller, David Jon Hiner
  • Patent number: 11289451
    Abstract: Methods and systems for a semiconductor package with high routing density routing patch are disclosed and may include a semiconductor die bonded to a substrate and a high routing density patch bonded to the substrate and to the semiconductor die, wherein the high routing density patch comprises a denser trace line density than the substrate. The high routing density patch can be a silicon-less-integrated module (SLIM) patch, comprising a BEOL portion, and can be TSV-less. Metal contacts may be formed on a second surface of the substrate. A second semiconductor die may be bonded to the substrate and to the high routing density patch. The high routing density patch may provide electrical interconnection between the semiconductor die. The substrate may be bonded to a silicon interposer. The high routing density patch may have a thickness of 10 microns or less. The substrate may have a thickness of 10 microns or less.
    Type: Grant
    Filed: June 2, 2020
    Date of Patent: March 29, 2022
    Assignee: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.
    Inventors: Michael Kelly, Ronald Patrick Huemoeller, David Jon Hiner
  • Publication number: 20210358770
    Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.
    Type: Application
    Filed: July 27, 2021
    Publication date: November 18, 2021
    Inventors: Ronald Patrick Huemoeller, Sukianto Rusli, David Jon Hiner
  • Publication number: 20210296139
    Abstract: A semiconductor device having one or more tiered pillars and methods of manufacturing such a semiconductor device are disclosed. The semiconductor device may include redistribution layers, a semiconductor die, and a plurality of interconnection structures that operatively couple a bottom surface of the semiconductor die to the redistribution layers. The semiconductor device may further include one or more conductive pillars about a periphery of the semiconductor die. The one or more conductive pillars may be electrically connected to the redistribution layers and may each comprise a plurality of stacked tiers.
    Type: Application
    Filed: June 7, 2021
    Publication date: September 23, 2021
    Inventors: Ronald Patrick Huemoeller, Michael G. Kelly, Curtis Zwenger
  • Patent number: 11094560
    Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: August 17, 2021
    Assignee: Amkor Technology Singapore Holding Pte. Ltd.
    Inventors: Ronald Patrick Huemoeller, Sukianto Rusli, David Jon Hiner
  • Patent number: 11081370
    Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.
    Type: Grant
    Filed: October 28, 2019
    Date of Patent: August 3, 2021
    Assignee: Amkor Technology Singapore Holding Pte. Ltd.
    Inventors: Ronald Patrick Huemoeller, Sukianto Rusli, David Jon Hiner
  • Patent number: 11031256
    Abstract: A semiconductor device having one or more tiered pillars and methods of manufacturing such a semiconductor device are disclosed. The semiconductor device may include redistribution layers, a semiconductor die, and a plurality of interconnection structures that operatively couple a bottom surface of the semiconductor die to the redistribution layers. The semiconductor device may further include one or more conductive pillars about a periphery of the semiconductor die. The one or more conductive pillars may be electrically connected to the redistribution layers and may each comprise a plurality of stacked tiers.
    Type: Grant
    Filed: May 29, 2020
    Date of Patent: June 8, 2021
    Assignee: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.
    Inventors: Ronald Patrick Huemoeller, Michael G. Kelly, Curtis Zwenger
  • Publication number: 20200411475
    Abstract: Methods and systems for a semiconductor package with high routing density routing patch are disclosed and may include a semiconductor die bonded to a substrate and a high routing density patch bonded to the substrate and to the semiconductor die, wherein the high routing density patch comprises a denser trace line density than the substrate. The high routing density patch can be a silicon-less-integrated module (SLIM) patch, comprising a BEOL portion, and can be TSV-less. Metal contacts may be formed on a second surface of the substrate. A second semiconductor die may be bonded to the substrate and to the high routing density patch. The high routing density patch may provide electrical interconnection between the semiconductor die. The substrate may be bonded to a silicon interposer. The high routing density patch may have a thickness of 10 microns or less. The substrate may have a thickness of 10 microns or less.
    Type: Application
    Filed: June 2, 2020
    Publication date: December 31, 2020
    Inventors: Michael Kelly, Ronald Patrick Huemoeller, David Jon Hiner
  • Publication number: 20200365480
    Abstract: A fingerprint sensor package, including a sensing side for sensing fingerprint information and a separate connection side for electrically connecting the fingerprint sensor package to a host device, is disclosed. The fingerprint sensor package can also include a sensor integrated circuit facing the sensing side and substantially surrounded by a fill material. The fill material includes vias at peripheral locations around the sensor integrated circuit. The fingerprint sensor package can further include a redistribution layer on the sensing side which redistributes connections of the sensor integrated circuit to the vias. The connections can further be directed through the vias to a ball grid array on the connection side. Some aspects also include electrostatic discharge traces positioned at least partially around a perimeter of the connection side. Methods of manufacturing are also disclosed.
    Type: Application
    Filed: April 24, 2020
    Publication date: November 19, 2020
    Inventors: Ronald Patrick Huemoeller, David Bolognia, Robert Francis Darveaux, Brett Arnold Dunlap
  • Publication number: 20200343129
    Abstract: Methods and systems for a semiconductor device package with a die to interposer wafer first bond are disclosed and may include bonding a plurality of semiconductor die comprising electronic devices to an interposer wafer, and applying an underfill material between the die and the interposer wafer. Methods and systems for a semiconductor device package with a die-to-packing substrate first bond are disclosed and may include bonding a first semiconductor die to a packaging substrate, applying an underfill material between the first semiconductor die and the packaging substrate, and bonding one or more additional die to the first semiconductor die. Methods and systems for a semiconductor device package with a die-to-die first bond are disclosed and may include bonding one or more semiconductor die comprising electronic devices to an interposer die.
    Type: Application
    Filed: July 10, 2020
    Publication date: October 29, 2020
    Inventors: Michael G. Kelly, Ronald Patrick Huemoeller, Won Chul Do, David Jon Hiner
  • Patent number: 10811277
    Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: October 20, 2020
    Assignee: Amkor Technology, Inc.
    Inventors: Ronald Patrick Huemoeller, Sukianto Rusli, David Jon Hiner
  • Publication number: 20200294815
    Abstract: A semiconductor device having one or more tiered pillars and methods of manufacturing such a semiconductor device are disclosed. The semiconductor device may include redistribution layers, a semiconductor die, and a plurality of interconnection structures that operatively couple a bottom surface of the semiconductor die to the redistribution layers. The semiconductor device may further include one or more conductive pillars about a periphery of the semiconductor die. The one or more conductive pillars may be electrically connected to the redistribution layers and may each comprise a plurality of stacked tiers.
    Type: Application
    Filed: May 29, 2020
    Publication date: September 17, 2020
    Inventors: Ronald Patrick Huemoeller, Michael G. Kelly, Curtis Zwenger
  • Patent number: 10748786
    Abstract: A semiconductor device having one or more tiered pillars and methods of manufacturing such a semiconductor device are disclosed. The semiconductor device may include redistribution layers, a semiconductor die, and a plurality of interconnection structures that operatively couple a bottom surface of the semiconductor die to the redistribution layers. The semiconductor device may further include one or more conductive pillars about a periphery of the semiconductor die. The one or more conductive pillars may be electrically connected to the redistribution layers and may each comprise a plurality of stacked tiers.
    Type: Grant
    Filed: April 9, 2019
    Date of Patent: August 18, 2020
    Assignee: AMKOR TECHNOLOGY, INC.
    Inventors: Ronald Patrick Huemoeller, Michael G. Kelly, Curtis Zwenger
  • Patent number: 10714378
    Abstract: Methods and systems for a semiconductor device package with a die to interposer wafer first bond are disclosed and may include bonding a plurality of semiconductor die comprising electronic devices to an interposer wafer, and applying an underfill material between the die and the interposer wafer. Methods and systems for a semiconductor device package with a die-to-packing substrate first bond are disclosed and may include bonding a first semiconductor die to a packaging substrate, applying an underfill material between the first semiconductor die and the packaging substrate, and bonding one or more additional die to the first semiconductor die. Methods and systems for a semiconductor device package with a die-to-die first bond are disclosed and may include bonding one or more semiconductor die comprising electronic devices to an interposer die.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: July 14, 2020
    Assignee: AMKOR TECHNOLOGY, INC.
    Inventors: Michael G. Kelly, Ronald Patrick Huemoeller, Won Chul Do, David Jon Hiner