Abstract: Lasers, such as in laser structures, can include two or more semiconductor structures that are substantially identical or that include the same semiconductor material and have substantially the same geometry, such as in closely spaced dual-spot two-beam or quad-spot four-beam lasers. The lasers can also include differently structured current flow or contact structures or different wavelength control structures. For example, current flow or contact structures can be differently structured to prevent or otherwise affect phase locking, such as by causing different threshold currents and different operating temperatures.

Abstract: A display apparatus includes an emissive screen having luminescent pixels that are addressed solely by a laser addressing system. Each pixel includes a luminescent region located next to a photocathode. When struck by the laser beam, free electrons are created that are accelerated by an applied high voltage field from the photocathode to the luminescent region, thereby causing the luminescent region to emit visible light with a brightness (energy) that is substantially higher than the energy of the addressing beam. Apertures are optionally provided in hexagonal luminescent regions to relax beam-scanning requirements. Optional millichannel plates (crude versions of 2nd generation night vision system Microchannel plates) are provided to enhance photon multiplication. A position sensitive device is implemented using the photocathode or photoanode (luminescent) material to facilitate the scanning and modulating process.

Abstract: A display apparatus includes a luminescent screen having pixels formed from blue, green and red luminescent material that are selectively activated by a laser beam to generate a full color image. The display utilizes a closed loop laser scanning/modulating arrangement in which a Position Sensitive Device (PSD) located next to the screen is used to determine the location of the impinging beam, and to transmit timing/location data to the laser addressing system. The laser addressing system uses the timing/location data to adjust and/or modulate the laser beam, thereby generating high-energy beam pulses that activate the selected pixels. The PSD includes vertical strips located along the side edges of the screen, or a sheet that is located behind the screen and accessed, for example, by way of slits or apertures formed in the screen material. The PSD sheet is coupled to an optional power source to form a photon-multiplication device.

Abstract: A microlens assembly is automatically aligned (positioned) to facilitate optimal light beam transmission between two spaced-apart subsystems (e.g., two printed circuit boards) supported within a larger system (e.g., a server system). The microlens assembly is controlled by the first subsystem, which also includes a light source (e.g., an emitter array) that generates the light beams by converting data signals. The second subsystem is provided with a receiver capable of receiving the light beams from the light source. The microlens assembly manipulates the microlens according to a raster light beams over a wide area surrounding the second subsystem. The optimal position of the microlens is determined by measuring a strength of each light signal, and by identifying an optimal strength light signal. The microlens assembly is then locked into the position associated with the optimal light signal.

Abstract: A microlens assembly is automatically aligned (positioned) to facilitate optimal light beam transmission between two spaced-apart subsystems (e.g., two printed circuit boards) supported within a larger system (e.g., a server system). The microlens assembly is controlled by the first subsystem, which also includes a light source (e.g., an emitter array) that generates the light beams by converting data signals. The second subsystem is provided with a receiver capable of receiving the light beams from the light source. The microlens assembly manipulates the microlens according to a raster light beams over a wide area surrounding the second subsystem. The optimal position of the microlens is determined by measuring a strength of each light signal, and by identifying an optimal strength light signal. The microlens assembly is then locked into the position associated with the optimal light signal.

Abstract: A III-V compound light emitter is integrated with Si-based actuators. The proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser.

Abstract: A micro-machined movable light emitting assembly is formed on or from an undoped or pure III-V substrate or formed on or from a doped III-V substrate. The movable light emitting assemblies are to be actuated using force generators, to generate the various mechanical degrees of freedom depending on the type of stage suspension and actuation.

Abstract: A monolithic laser structure has an infrared laser structure side by side with a red laser structure. The infrared and red laser structures share the same substrate and have the same material for the cladding layers and for the cap and barrier reduction layers. The red and infrared laser structures can have native oxide confined or metal confined ridge waveguides.

Abstract: The present invention is a method and system for lithographic printing by controlling the surface energy of a printing plate to affect the hydrophilic and hydrophobic properties of the printing plate. These properties enable the ink to be applied to the printing plate in an image-wise manner and provides for rapid production of images on a recording medium. The lithographic printing plate may be rewritten repeatedly between printing jobs or may even be rewritten between individual recording media.

Abstract: This invention relates to a multiple wavelength laser structure, and more particularly, to a multiple wavelength laser array structure fabricated by flip-chip bonding from laser structures on two different substrates. A side by side red/IR laser structure is flip-chip bonded to a blue laser structure to form a red/blue/IR hybrid integrated laser structure.

Abstract: A solid state laser array is multiplexed using an array of micromirrors to permit high resolution printing in a wide format. Each laser in the laser array and each micromirror in the mirror array is individually controlled. The laser array may be an array of VCSELs produced on a GaAs substrate.

Abstract: A micro-machined movable light emitting assembly is formed on or from an undoped or pure III-V substrate or formed on or from a doped III-V substrate. The movable light emitting assemblies are to be actuated using force generators, to generate the various mechanical degrees of freedom depending on the type of stage suspension and actuation.

Abstract: A micro-machined movable microlens assembly is formed on undoped or pure a semiconductor substrate. The movable microlens assemblies are to be actuated using force generators which cause various mechanical degrees of freedom depending upon the type of stage suspension and actuation used.

Abstract: A single layer of atoms of a selected valence is deposited between a substrate and a group III-V nitride film to improve the quality of the nitride film and of subsequently deposited nitride films on the substrate. The interlayer provides local charge neutrality at the interface, thereby promoting two-dimensional growth of the nitride film and reduced dislocation densities. When the substrate is sapphire, the interlayer should include atoms of group II elements and possibly group III elements. The structure can include a group III-V nitride buffer layer on the interlayer to further enhance the quality of the group III-V nitride films. The structures can be used in blue light emitting optoelectronic devices.

Abstract: A monolithic laser structure has an infrared laser structure side by side with a red laser structure. The infrared and red laser structures share the same substrate and have the same material for the cladding layers and for the cap and barrier reduction layers. The red and infrared laser structures can have native oxide confined or metal confined ridge waveguides.

Abstract: A III-V compound light emitter is integrated with Si-based actuators. The Proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser. Electro or magnetic based actuation from Si-based actuators provides linear or angular movement of the light emitter.

Abstract: A multiple-wavelength laser diode array is described. A wavelength span of several tens of nanometers is achieved through band-filling of a quantum well active region. A multiple-wavelength array is formed by selectively introducing different amounts of optical loss into the array elements, to affect the threshold current density. With minimum losses, the laser oscillates at a long wavelength, while an element with high loss will undergo more bandfilling and be forced to emit at a shorter wavelength. To illustrate the structures which incorporate these additional, selective losses, a 2-red-wavelength AlGaInP laser array is described. In preferred embodiments, increased optical loss is achieved in an SBR type laser by narrowing the ridge region, or by reducing its thickness. In another type of laser, increased optical loss is achieved by a very thin upper cladding layer causing increased optical absorption in a close overlying cap or metal layer.

Abstract: The present invention relates to electronic devices formed in crystallites of III-V nitride materials. Specifically, the present invention simplifies the processing technology required for the fabrication of high-performance electronic devices in III-V nitride materials.

Abstract: Methods for defect-free impurity-induced laser disordering (IILD) of AlGaInP and AlGaAs heterostructures. Phosphorus-doped or As-doped films are used in which silicon serves as a diffusion source and silicon nitride acts as a barrier for selective IILD. High-performance, index-guided (AlGa).sub.0.5 In.sub.0.5 P lasers may be fabricated with this technique, analogous to those made in the AlGaAs material system. The deposition of the diffusion source films preferably is carried out in a low pressure reactor. Also disclosed is a scheme for reducing or eliminating phosphorus overpressure during silicon diffusion into III-V semiconducting material by adding a pre-diffusion anneal step. Defects produced during intermixing are also reduced using a GaInP or GaInP/GaAs cap.

Abstract: An index-guided semiconductor laser diode made by impurity-induced layer disordering (IILD) of AlInP, GaInP and AlGaInP heterostructures. Several techniques for reducing parasitic leakage current via the n-type IILD regions, are described. These include removing the upper portions of the material outside the laser stripe, which can be accomplished by wet or dry etching of the material in a self-aligned manner. As an alternative, after formation of the waveguide, appropriately doped layers are grown over the disordered and as-grown regions of the structure to contact the active waveguide and simultaneously block parasitic shunt current from the disordered regions. Another method provides shallow inset insulating regions to replace the n-type disordered regions at the vicinity of a cap layer used to reduce a current barrier.