Patents by Inventor Ru-Liang Lee

Ru-Liang Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11916022
    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor processing system including an overlay (OVL) shift measurement device. The OVL shift measurement device is configured to determine an OVL shift between a first wafer and a second wafer, where the second wafer overlies the first wafer. A photolithography device is configured to perform one or more photolithography processes on the second wafer. A controller is configured to perform an alignment process on the photolithography device according to the determined OVL shift. The photolithography device performs the one or more photolithography processes based on the OVL shift.
    Type: Grant
    Filed: June 7, 2022
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yeong-Jyh Lin, Ching I Li, De-Yang Chiou, Sz-Fan Chen, Han-Jui Hu, Ching-Hung Wang, Ru-Liang Lee, Chung-Yi Yu
  • Publication number: 20240021719
    Abstract: A semiconductor device includes a substrate and a seed layer over the substrate. The seed layer includes a first seed sublayer having a first lattice structure, wherein the first seed sublayer includes AlN, and the first seed sublayer is doped with carbon, and a second seed sublayer over the first seed layer, wherein the second seed layer has a second lattice structure different from the first lattice structure, and a thickness of the second seed sublayer ranges from about 50 nanometers (nm) to about 200 nm. The semiconductor device further includes a graded layer over the seed layer. The graded layer includes a first graded sublayer including AlGaN, having a first Al:Ga ratio; and a second graded sublayer over the first graded sublayer, wherein the second graded sublayer includes AlGaN having a second Al:Ga ratio. The semiconductor device further includes a two-dimensional electron gas (2-DEG) over the graded layer.
    Type: Application
    Filed: July 19, 2023
    Publication date: January 18, 2024
    Inventors: Chi-Ming CHEN, Po-Chun LIU, Chung-Yi YU, Chia-Shiung TSAI, Ru-Liang LEE
  • Publication number: 20230369433
    Abstract: A method of forming a semiconductor device includes: forming an etch stop layer over a substrate; forming a first diffusion barrier layer over the etch stop layer; forming a semiconductor device layer over the first diffusion barrier layer, the semiconductor device layer including a transistor; forming a first interconnect structure over the semiconductor device layer at a front side of the semiconductor device layer, the first interconnect structure electrically coupled to the transistor; attaching the first interconnect structure to a carrier; removing the substrate, the etch stop layer, and the first diffusion barrier layer after the attaching; and forming a second interconnect structure at a backside of the semiconductor device layer after the removing.
    Type: Application
    Filed: July 24, 2023
    Publication date: November 16, 2023
    Inventors: Eugene I-Chun Chen, Ru-Liang Lee, Chia-Shiung Tsai, Chen-Hao Chiang
  • Patent number: 11804531
    Abstract: A method of forming a semiconductor device includes: forming an etch stop layer over a substrate; forming a first diffusion barrier layer over the etch stop layer; forming a semiconductor device layer over the first diffusion barrier layer, the semiconductor device layer including a transistor; forming a first interconnect structure over the semiconductor device layer at a front side of the semiconductor device layer, the first interconnect structure electrically coupled to the transistor; attaching the first interconnect structure to a carrier; removing the substrate, the etch stop layer, and the first diffusion barrier layer after the attaching; and forming a second interconnect structure at a backside of the semiconductor device layer after the removing.
    Type: Grant
    Filed: December 30, 2020
    Date of Patent: October 31, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Eugene I-Chun Chen, Ru-Liang Lee, Chia-Shiung Tsai, Chen-Hao Chiang
  • Publication number: 20230343817
    Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric stack disposed over a substrate. The dielectric stack has a first plurality of layers interleaved between a second plurality of layers. The dielectric stack has one or more surfaces that define a plurality of indentations recessed into a side of the dielectric stack at different vertical heights corresponding to the second plurality of layers. A capacitor structure lines the one or more surfaces of the dielectric stack. The capacitor structure includes conductive electrodes separated by a capacitor dielectric.
    Type: Application
    Filed: June 28, 2023
    Publication date: October 26, 2023
    Inventors: Alexander Kalnitsky, Ru-Liang Lee, Ming Chyi Liu, Sheng-Chan Li, Sheng-Chau Chen
  • Publication number: 20230326787
    Abstract: Deep trench isolation structures for high voltage semiconductor-on-insulator devices are disclosed herein. An exemplary deep trench isolation structure surrounds an active region of a semiconductor-on-insulator substrate. The deep trench isolation structure includes a first insulator sidewall spacer, a second insulator sidewall spacer, and a multilayer silicon-comprising isolation structure disposed between the first insulator sidewall spacer and the second insulator sidewall spacer. The multilayer silicon-comprising isolation structure includes a top polysilicon portion disposed over a bottom silicon portion. The bottom polysilicon portion is formed by a selective deposition process, while the top polysilicon portion is formed by a non-selective deposition process. In some embodiments, the bottom silicon portion is doped with boron.
    Type: Application
    Filed: June 16, 2023
    Publication date: October 12, 2023
    Inventors: Yu-Hung Cheng, Yu-Chun Chang, Ching I Li, Ru-Liang Lee
  • Patent number: 11735624
    Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric stack disposed over a substrate. The dielectric stack has a first plurality of layers interleaved between a second plurality of layers. The dielectric stack has one or more surfaces that define a plurality of indentations recessed into a side of the dielectric stack at different vertical heights corresponding to the second plurality of layers. A capacitor structure lines the one or more surfaces of the dielectric stack. The capacitor structure includes conductive electrodes separated by a capacitor dielectric.
    Type: Grant
    Filed: June 29, 2021
    Date of Patent: August 22, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Alexander Kalnitsky, Ru-Liang Lee, Ming Chyi Liu, Sheng-Chan Li, Sheng-Chau Chen
  • Patent number: 11721752
    Abstract: A semiconductor device includes a doped substrate and a seed layer in direct contact with the substrate. The seed layer includes a first seed sublayer having a first lattice structure. The first seed layer is doped with carbon. The seed layer further includes a second seed sublayer over the first see layer, wherein the second seed layer has a second lattice structure. The semiconductor device further includes a graded layer in direct contact with the seed layer. The graded layer includes a first graded sublayer including AlGaN having a first Al:Ga ratio; a second graded sublayer including AlGaN having a second Al:Ga ratio different from the first Al:Ga ratio; and a third graded sublayer over including AlGaN having a third Al:Ga ratio different from the second Al:Ga ratio. The semiconductor device includes a channel layer over the graded layer. The semiconductor device includes an active layer over the channel layer.
    Type: Grant
    Filed: October 20, 2020
    Date of Patent: August 8, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi-Ming Chen, Po-Chun Liu, Chung-Yi Yu, Chia-Shiung Tsai, Ru-Liang Lee
  • Patent number: 11682578
    Abstract: Deep trench isolation structures for high voltage semiconductor-on-insulator devices are disclosed herein. An exemplary deep trench isolation structure surrounds an active region of a semiconductor-on-insulator substrate. The deep trench isolation structure includes a first insulator sidewall spacer, a second insulator sidewall spacer, and a multilayer silicon-comprising isolation structure disposed between the first insulator sidewall spacer and the second insulator sidewall spacer. The multilayer silicon-comprising isolation structure includes a top polysilicon portion disposed over a bottom silicon portion. The bottom polysilicon portion is formed by a selective deposition process, while the top polysilicon portion is formed by a non-selective deposition process. In some embodiments, the bottom silicon portion is doped with boron.
    Type: Grant
    Filed: April 16, 2021
    Date of Patent: June 20, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Hung Cheng, Yu-Chun Chang, Ching I Li, Ru-Liang Lee
  • Publication number: 20230062974
    Abstract: In some embodiments, the present disclosure relates to a process tool that includes a chamber housing defining a processing chamber. Within the processing chamber is a wafer chuck configured to hold a substrate. Further, a bell jar structure is arranged over the wafer chuck such that an opening of the bell jar structure faces the wafer chuck. A plasma coil is arranged over the bell jar structure. An oxygen source coupled to the processing chamber and configured to input oxygen gas into the processing chamber.
    Type: Application
    Filed: August 27, 2021
    Publication date: March 2, 2023
    Inventors: Yen-Liang Lin, Chia-Wen Zhong, Yao-Wen Chang, Min-Chang Ching, Kuo Liang Lu, Cheng-Yuan Tsai, Ru-Liang Lee
  • Patent number: 11532642
    Abstract: The present disclosure relates an integrated chip. The integrated chip includes a polysilicon layer arranged on an upper surface of a base substrate. A dielectric layer is arranged over the polysilicon layer, and an active semiconductor layer is arranged over the dielectric layer. A semiconductor material is arranged vertically on the upper surface of the base substrate and laterally beside the active semiconductor layer.
    Type: Grant
    Filed: March 2, 2021
    Date of Patent: December 20, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Eugene I-Chun Chen, Kuan-Liang Liu, Szu-Yu Wang, Chia-Shiung Tsai, Ru-Liang Lee, Chih-Ping Chao, Alexander Kalnitsky
  • Publication number: 20220352211
    Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a polysilicon layer arranged on an upper surface of a base substrate. A dielectric layer is arranged over the polysilicon layer, and an active semiconductor layer is arranged over the dielectric layer. A semiconductor material is arranged vertically on the upper surface of the base substrate and laterally beside the active semiconductor layer.
    Type: Application
    Filed: July 21, 2022
    Publication date: November 3, 2022
    Inventors: Eugene I-Chun Chen, Kuan-Liang Liu, Szu-Yu Wang, Chia-Shiung Tsai, Ru-Liang Lee, Chih-Ping Chao, Alexander Kalnitsky
  • Publication number: 20220328538
    Abstract: Photodetectors, transistors, and metal interconnect structures may be formed on a front side of the semiconductor substrate. A trench is formed through a backside surface of the semiconductor substrate toward the front side by an anisotropic etch process, which provides a vertical or tapered surface with a first root-mean-square surface roughness greater than 0.5 nm. A single crystalline semiconductor liner is deposited by performing an epitaxial growth process at a growth temperature less than 500 degrees Celsius on the vertical or tapered surface of the trench. A physically exposed side surface of the single crystalline semiconductor liner may have a second root-mean-square surface roughness less than 0.5 nm. At least one dielectric metal oxide liner having a uniform thickness may be formed on the physically exposed side surface to provide a uniform negatively charged film, which may be advantageously used to reduce dark current and white pixels.
    Type: Application
    Filed: June 29, 2022
    Publication date: October 13, 2022
    Inventors: Ru-Liang LEE, Yu-Hung CHENG, Yeur-Luen TU
  • Publication number: 20220328419
    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor processing system including an overlay (OVL) shift measurement device. The OVL shift measurement device is configured to determine an OVL shift between a first wafer and a second wafer, where the second wafer overlies the first wafer. A photolithography device is configured to perform one or more photolithography processes on the second wafer. A controller is configured to perform an alignment process on the photolithography device according to the determined OVL shift. The photolithography device performs the one or more photolithography processes based on the OVL shift.
    Type: Application
    Filed: June 7, 2022
    Publication date: October 13, 2022
    Inventors: Yeong-Jyh Lin, Ching I. Li, De-Yang Chiou, Sz-Fan Chen, Han-Jui Hu, Ching-Hung Wang, Ru-Liang Lee, Chung-Yi Yu
  • Publication number: 20220285480
    Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric stack disposed over a substrate. The dielectric stack has a first plurality of layers interleaved between a second plurality of layers. The dielectric stack has one or more surfaces that define a plurality of indentations recessed into a side of the dielectric stack at different vertical heights corresponding to the second plurality of layers. A capacitor structure lines the one or more surfaces of the dielectric stack. The capacitor structure includes conductive electrodes separated by a capacitor dielectric.
    Type: Application
    Filed: June 29, 2021
    Publication date: September 8, 2022
    Inventors: Alexander Kalnitsky, Ru-Liang Lee, Ming Chyi Liu, Sheng-Chan Li, Sheng-Chau Chen
  • Patent number: 11404465
    Abstract: Photodetectors, transistors, and metal interconnect structures may be formed on a front side of the semiconductor substrate. A trench is formed through a backside surface of the semiconductor substrate toward the front side by an anisotropic etch process, which provides a vertical or tapered surface with a first root-mean-square surface roughness greater than 0.5 nm. A single crystalline semiconductor liner is deposited by performing an epitaxial growth process at a growth temperature less than 500 degrees Celsius on the vertical or tapered surface of the trench. A physically exposed side surface of the single crystalline semiconductor liner may have a second root-mean-square surface roughness less than 0.5 nm. At least one dielectric metal oxide liner having a uniform thickness may be formed on the physically exposed side surface to provide a uniform negatively charged film, which may be advantageously used to reduce dark current and white pixels.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: August 2, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Ru-Liang Lee, Yu-Hung Cheng, Yeur-Luen Tu
  • Patent number: 11374000
    Abstract: Various embodiments of the present application are directed towards a semiconductor device comprising a trench capacitor, the trench capacitor comprising a plurality of lateral protrusions. In some embodiments, the trench capacitor comprises a dielectric structure over a substrate. The dielectric structure may comprise a plurality of dielectric layers overlying the substrate. The dielectric structure may comprise a plurality of lateral recesses. In some embodiments, the plurality of lateral protrusions extend toward and fill the plurality of lateral recesses. By forming the trench capacitor with the plurality of lateral protrusions filling the plurality of lateral recesses, the surface area of the capacitor is increased without increasing the depth of the trench. As a result, greater capacitance values may be achieved without necessarily increasing the depth of the trench and thus, without necessarily increasing the size of the semiconductor device.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: June 28, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ru-Liang Lee, Ming Chyi Liu, Shih-Chang Liu
  • Publication number: 20220189997
    Abstract: The present disclosure relates an integrated chip. The integrated chip includes a polysilicon layer arranged on an upper surface of a base substrate. A dielectric layer is arranged over the polysilicon layer, and an active semiconductor layer is arranged over the dielectric layer. A semiconductor material is arranged vertically on the upper surface of the base substrate and laterally beside the active semiconductor layer.
    Type: Application
    Filed: March 2, 2021
    Publication date: June 16, 2022
    Inventors: Eugene I-Chun Chen, Kuan-Liang Liu, Szu-Yu Wang, Chia-Shiung Tsai, Ru-Liang Lee, Chih-Ping Chao, Alexander Kalnitsky
  • Patent number: 11362038
    Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a plurality of upper alignment marks on a semiconductor wafer. A plurality of lower alignment marks is formed on a handle wafer and correspond to the upper alignment marks. The semiconductor wafer is bonded to the handle wafer such that centers of the upper alignment marks are laterally offset from centers of corresponding lower alignment marks. An overlay (OVL) shift is measured between the handle wafer and the semiconductor wafer by detecting the plurality of upper alignment marks and the plurality of lower alignment marks. A photolithography process is performed by a photolithography tool to partially form an integrated circuit (IC) structure over the semiconductor wafer. During the photolithography process the photolithography tool is compensatively aligned according to the OVL shift.
    Type: Grant
    Filed: October 5, 2020
    Date of Patent: June 14, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yeong-Jyh Lin, Ching I Li, De-Yang Chiou, Sz-Fan Chen, Han-Jui Hu, Ching-Hung Wang, Ru-Liang Lee, Chung-Yi Yu
  • Patent number: 11329148
    Abstract: A semiconductor device includes a substrate. The semiconductor device includes an AlN seed layer in direct contact with the substrate. The AlN seed layer includes an AlN first seed sublayer, and an AlN second seed sublayer, wherein a portion of the AlN seed layer closest to the substrate includes carbon dopants and has a different lattice structure from a substrate lattice structure. The semiconductor device includes a graded layer in direct contact with the AlN seed layer. The graded layer includes a first graded sublayer including AlGaN, a second graded sublayer including AlGaN, and a third graded sublayer including AlGaN. The semiconductor device includes a channel layer over the graded layer. The semiconductor device includes an active layer over the channel layer, wherein the active layer has a band gap discontinuity with the channel layer.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: May 10, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi-Ming Chen, Po-Chun Liu, Chung-Yi Yu, Chia-Shiung Tsai, Ru-Liang Lee