Abstract: An ultra-violet light-emitting diode (LED) array, 12, and method for fabricating same with an AlInGaN multiple-quantum-well active region, 500, exhibiting stable cw-powers. The LED includes a template, 10, with an ultraviolet light-emitting array structure on it. The template includes a first buffer layer, 321, then a second buffer layer, 421, on the first preferably with a strain-relieving layer in both buffer layers. Next there is a semiconductor layer having a first type of conductivity, 500, followed by a layer providing a quantum-well region, 600, with an emission spectrum ranging from 190 nm to 369 nm. Another semiconductor layer having a second type of conductivity is applied next, 800. A first metal contact, 980, is a charge spreading layer in electrical contact with the first layer and between the array of LED's. A second contact, 990, is applied to the semiconductor layer having the second type of conductivity, to complete the LED.

Abstract: An ultra-violet light-emitting diode (LED) array, 12, and method for fabricating same with an AlInGaN multiple-quantum-well active region, 500, exhibiting stable cw-powers. The LED includes a template, 10, with an ultraviolet light-emitting array structure on it. The template includes a first buffer layer, 321, then a second buffer layer, 421, on the first preferably with a strain-relieving layer in both buffer layers. Next there is a semiconductor layer having a first type of conductivity, 500, followed by a layer providing a quantum-well region, 600, with an emission spectrum ranging from 190 nm to 369 nm. Another semiconductor layer having a second type of conductivity is applied next, 800. A first metal contact, 980, is a charge spreading layer in electrical contact with the first layer and between the array of LED's. A second contact, 990, is applied to the semiconductor layer having the second type of conductivity, to complete the LED.