Abstract: Embodiments of wafer bonding method and structures thereof are disclosed. The wafer bonding method can include performing a plasma activation treatment on a front surface of a first and a front surface of a second wafer; performing a silica sol treatment on the front surfaces of the first and the second wafers; performing a preliminary bonding process of the first and second wafer; and performing a heat treatment of the first and the second wafers to bond the front surface of the first wafer to the front surface of the second wafers.

Abstract: A packaged semiconductor includes a substrate and a first component disposed on the substrate. The package includes an underfill that is dispensed under and around the first component. The package also includes a second component disposed on the substrate adjacent to the first component that provides a border to the underfill.

Abstract: Embodiments of apparatus for flipping a semiconductor device and method of using the same are disclosed. In an example, an apparatus for flipping a semiconductor device includes at least one fixture and a rotation unit connected to the at least one fixture. The at least one fixture is configured to hold the semiconductor device by simultaneously pressing a first surface and a second surface of the semiconductor device. The first surface is opposite to the second surface. The rotation unit is configured to rotate the at least one fixture to flip the semiconductor device held by the at least one fixture.

Abstract: A high-performance triple-crosslinked polymer and a preparation method thereof are provided. The polymer is obtained by curing and cross-linking a monomer having two epoxy groups, a cross-linking monomer and a functional monomer. The polymer contains a cross-linking network formed by covalent bonds and two types of multi-level hydrogen bonds with different strengths. The interaction strength between the covalent bonds and the two types of hydrogen bonds decreases in a gradient. The dilemma of the strength-ductility tradeoff in a high-performance polymer is overcome by forming a triple-crosslinked network with covalent bonds and multi-level hydrogen bonds with different strengths in the polymer. The dynamic and hierarchical hydrogen bonds are broken and recombined timely and continuously to concurrently maintain the complete structure of the polymer network and enable the polymer network to quickly respond to the transmission and dissipation of the external environment.

Abstract: A method for adjusting height of a 3d printer nozzle. In an embodiment, the method uses a fully wavy line as a reference line. The method includes the following steps. Determining an initial value of a height difference between the nozzle and a bottom of a probe by using a feeler gauge. Moving the nozzle vertically to adjust the height based on the initial value, obtaining a printing height of a first line, and printing the first line. Determining whether the first line is a fully wavy line. Adjusting the height of the nozzle for N times according to a preset step value, and printing N lines with corresponding heights. Determining whether the N lines have a fully wavy line. Calculating the height difference between the nozzle and the bottom of the probe by an equation. Adjusting the height of the nozzle.

Abstract: Some embodiments of the disclosure provide a flatness detection device. In an embodiment, the flatness detection device includes a back plate, an electromagnet, a cross beam, a probe, and a limiting frame. The limiting frame and the electromagnet are provided side by side on the back plate. The cross beam is located above the limiting frame and the electromagnet. The probe vertically penetrates the cross beam and the limiting frame. A spring is provided between the cross beam and the electromagnet. The spring is movable in a vertical direction by a guide, the movement being at least one of compression and extension.

Abstract: The present invention provides methods and devices for specific detection of nucleic acids using an integrated circuit of two independent enzyme-DNA nanostructures—an easily adjustable recognition element and a sensitive universal signaling element—to decouple target recognition and visual signal amplification. The recognition element comprises a DNA polymerase enzyme, a DNA polymerase enzyme-specific DNA aptamer and an inverter oligonucleotide. In the presence of a target nucleic acid, the inverter oligonucleotide binds to the target nucleic acid and releases the DNA polymerase enzyme from inhibition by the DNA aptamer.

Abstract: Embodiments of the present invention relate to methods, systems, and computer program products for file management in a distributed file cache system. In some embodiments, a method is disclosed. According to the method, responsive to determining that at least one client node is obtaining a file of a first version stored at a storage node, one or more processors generate contact information indicating that the file of the first version is accessible from the storage node and the at least one client node and recorded the contact information into a distributed hash table. The storage node and the at least one client node are included in a plurality of nodes associated with the distributed hash table. Further, one or more processors generate first version information indicating that the file is of the first version and record the first version information into a blockchain associated with the plurality of nodes.

Abstract: Embodiments of this application disclose a method for updating a network RTK reference station network including: if there is a newly added node in a current reference station network, determining a position relationship between the newly added node and each node in the current reference station network; determining N target nodes in the current reference station network according to a preset rule based on the position relationship; determining, based on the N target nodes, M nodes connected to each of the N target nodes, where the M nodes belong to the current reference station network; and performing network construction on the M nodes and the newly added node according to a Delaunay triangulated network construction rule. According to the method for updating a network RTK reference station network, fast networking can be implemented and efficiency can be improved.

Abstract: Embodiments of wafer bonding methods are disclosed. In an example, a first plasma activation treatment based on oxygen or an inert gas is performed on a front surface of a first wafer and a front surface of a second wafer. After the first plasma activation treatment, a second plasma activation treatment based on water molecules is performed on the front surface of the first wafer and the front surface of the second wafer. After the second plasma activation treatment, the first wafer and the second wafer are bonded such that the treated front surface of the first wafer is in physical contact with the treated front surface of the second wafer.

Abstract: A poppet valve has an elongated stem that is configured to extend along a longitudinal axis. The poppet valve further includes a valve body that is disposed laterally with respect to the longitudinal axis and located in a spaced apart relation with an end of the elongated stem. The valve body has a pair of opposing faces disposed co-axial with the longitudinal axis of the elongated stem. The poppet valve also includes at least two arcuately shaped appendages depending downwardly from the end of the elongated stem and extending away from the longitudinal axis of the elongated stem. An end of each appendage is disposed in abutment with an annular region defined on one of the opposing faces of the valve body, a perimeter of the annular region being larger than a perimeter of the elongated stem measured about the longitudinal axis.

Abstract: Embodiments of wafer bonding method and structures thereof are disclosed. The wafer bonding method can include performing a plasma activation treatment on a front surface of a first and a front surface of a second wafer; performing a silica sol treatment on the front surfaces of the first and the second wafers; performing a preliminary bonding process of the first and second wafer; and performing a heat treatment of the first and the second wafers to bond the front surface of the first wafer to the front surface of the second wafers.

Abstract: Embodiments of wafer bonding methods are disclosed. In an example, a first plasma activation treatment based on oxygen or an inert gas is performed on a front surface of a first wafer and a front surface of a second wafer. After the first plasma activation treatment, a second plasma activation treatment based on water molecules is performed on the front surface of the first wafer and the front surface of the second wafer. After the second plasma activation treatment, the first wafer and the second wafer are bonded such that the treated front surface of the first wafer is in physical contact with the treated front surface of the second wafer.

Abstract: Embodiments of wafer bonding method and structures thereof are disclosed. The wafer bonding method can include performing a plasma activation treatment on a front surface of a first and a front surface of a second wafer; performing a silica sol treatment on the front surfaces of the first and the second wafers; performing a preliminary bonding process of the first and second wafer; and performing a heat treatment of the first and the second wafers to bond the front surface of the first wafer to the front surface of the second wafers.

Abstract: Embodiments of apparatus for flipping a semiconductor device and method of using the same are disclosed. In an example, an apparatus for flipping a semiconductor device includes at least one fixture and a rotation unit connected to the at least one fixture. The at least one fixture is configured to hold the semiconductor device by simultaneously pressing a first surface and a second surface of the semiconductor device. The first surface is opposite to the second surface. The rotation unit is configured to rotate the at least one fixture to flip the semiconductor device held by the at least one fixture.

Abstract: Embodiments of this application provide a positioning method and apparatus. The method may include setting an ambiguity adjustment parameter for a mobile device, where the ambiguity adjustment parameter is used to record an ambiguity change status used to determine a virtual station observation value for the mobile device. The method may also include adjusting an observation value of a first primary datum station based on a first ambiguity adjustment parameter of the mobile device in a first serving cell to generate a first virtual station observation value, where the first primary datum station is a primary datum station of the first serving cell, and the first virtual station observation value is used to position the mobile device in the first serving cell; and sending the first virtual station observation value to the mobile device.

Abstract: Embodiments of this application disclose a method for updating a network RTK reference station network including: if there is a newly added node in a current reference station network, determining a position relationship between the newly added node and each node in the current reference station network; determining N target nodes in the current reference station network according to a preset rule based on the position relationship; determining, based on the N target nodes, M nodes connected to each of the N target nodes, where the M nodes belong to the current reference station network; and performing network construction on the M nodes and the newly added node according to a Delaunay triangulated network construction rule. According to the method for updating a network RTK reference station network, fast networking can be implemented and efficiency can be improved.

Abstract: Embodiments of wafer bonding method and structures thereof are disclosed. The wafer bonding method can include performing a plasma activation treatment on a front surface of a first and a front surface of a second wafer; performing a silica sol treatment on the front surfaces of the first and the second wafers; performing a preliminary bonding process of the first and second wafer; and performing a heat treatment of the first and the second wafers to bond the front surface of the first wafer to the front surface of the second wafers.

Abstract: A poppet valve has an elongated stem that is configured to extend along a longitudinal axis. The poppet valve further includes a valve body that is disposed laterally with respect to the longitudinal axis and located in a spaced apart relation with an end of the elongated stem. The valve body has a pair of opposing faces disposed co-axial with the longitudinal axis of the elongated stem. The poppet valve also includes at least two arcuately shaped appendages depending downwardly from the end of the elongated stem and extending away from the longitudinal axis of the elongated stem. An end of each appendage is disposed in abutment with an annular region defined on one of the opposing faces of the valve body, a perimeter of the annular region being larger than a perimeter of the elongated stem measured about the longitudinal axis.