Abstract: The present invention provides a method for producing a cyclometalated iridium complex, the method including producing a cyclometalated iridium complex by reacting a cyclometalated iridium complex raw material including an organoiridium compound with an aromatic heterocyclic bidentate ligand capable of forming an iridium-carbon bond and an iridium-nitrogen bond, and using as the raw material an organoiridium compound including a substructure represented by the following General Formula (1). The present invention is capable of producing a cyclometalated iridium complex with a high yield without by-production of a halogen-crosslinked iridium dimer. (in General Formula (1), Ir represents an iridium atom, and O represents an oxygen atom).

Abstract: A method for producing a halogen-crosslinked iridium dimer with increased purity that is used as a precursor in production of a cyclometalated iridium complex useful as a phosphorescent material for organic electroluminescent devices, organic electrochemiluminescent devices, luminescent sensors, photosensitizing pigments, photocatalysts, luminescent probes, various light sources, and the like. The halogen-crosslinked iridium dimer is represented by the following formula: In this formula, each X represents a halogen atom, each CyA represents an optionally substituted five- or six-membered cyclic ring containing nitrogen atoms, and is linked to iridium via the nitrogen atoms, and each CyB represents an optionally substituted five- or six-membered ring containing carbon atoms, and is linked to iridium via the carbon atoms. CyA and CyB can be linked together to form an optionally substituted ring.

Abstract: The present invention provides a method for producing a cyclometalated iridium complex, the method including producing a cyclometalated iridium complex by reacting a cyclometalated iridium complex raw material including an organoiridium compound with an aromatic heterocyclic bidentate ligand capable of forming an iridium-carbon bond and an iridium-nitrogen bond, and using as the raw material an organoiridium compound including a substructure represented by the following General Formula (1). The present invention is capable of producing a cyclometalated iridium complex with a high yield without by-production of a halogen-crosslinked iridium dimer. (in General Formula (1), Ir represents an iridium atom, and O represents an oxygen atom).

Abstract: The present invention provides a method for producing a cyclometalated iridium complex, the method including producing a cyclometalated iridium complex by reacting a cyclometalated iridium complex raw material including an organoiridium material with an aromatic heterocyclic bidentate ligand capable of forming an iridium-carbon bond and an iridium-nitrogen bond, and using as the raw material an organoiridium material represented by the following general formula (1). The present invention allows a cyclometalated iridium complex to be produced with a high yield without by-production of a halogen-crosslinked iridium dimer.

Abstract: The present invention provides a method for producing a cyclometalated iridium complex by use of a non-chlorine iridium raw material. The method for producing a cyclometalated iridium complex includes producing a cyclometalated iridium complex by reacting a raw material including an iridium compound with an aromatic heterocyclic bidentate ligand capable of forming an iridium-carbon bond, the raw material being non-halogenated iridium having a conjugated base of a strong acid as a ligand. Here, the non-halogenated iridium is preferably one containing a conjugated base of a strong acid having a pKa of 3 or less as a ligand.

Abstract: The present invention provides an iridium compound useful as a raw material compound for producing a cyclometalated iridium complex, the iridium compound being represented by the following General Formula (1). The iridium compound of the present invention is particularly useful as a raw material for imidazole-based cyclometalated iridium complexes among cyclometalated iridium complexes. (In General Formula (1), Ir represents an iridium atom, O represents an oxygen atom, X represents a halogen atom, and Y represents a counter cation; and R1 and R2 each independently represent an alkyl group with a carbon number of 1 or more and 10 or less, with the proviso that only one of R1 and R2 is a branched alkyl group.

Abstract: An organoplatinum compound with the following formula for use as a raw material in the chemical deposition of platinum compound thin films. In the formula, n is 1 or more and 5 or less. Each of substituents R1 to R5 on the alkenyl amine is a hydrogen atom, an alkyl group or the like and has a carbon number of 4 or less. Each of alkyl anions R6 and R7 is an alkyl group having a carbon number of 1 or more and 3 or less. The vapor pressure of the organoplatinum compound is high enough to allow for the manufacturing of a platinum thin film at low temperature. It also has moderate thermal stability.

Abstract: The present invention provides a method for producing a cyclometalated iridium complex, the method including producing a cyclometalated iridium complex by reacting a cyclometalated iridium complex raw material including an organoiridium material with an aromatic heterocyclic bidentate ligand capable of forming an iridium-carbon bond and an iridium-nitrogen bond, and using as the raw material an organoiridium material represented by the following general formula (1). The present invention allows a cyclometalated iridium complex to be produced with a high yield without by-production of a halogen-crosslinked iridium dimer.

Abstract: Provided is a method for producing a halogen-crosslinked iridium dimer, including reacting an iridium compound represented by the general formula (1) with an aromatic bidentate ligand in a solvent to produce a halogen-crosslinked iridium dimer, the solvent having a boiling point of 50° C. or higher and lower than 350° C., the reaction being carried out at a reaction temperature of 50° C. or higher and lower than 300° C., and the aromatic bidentate ligand being added in an amount of 0.5 times or more and less than 10 times the molar amount of the iridium compound. The halogen-crosslinked iridium dimer is usable as a precursor of a cyclometalated iridium complex useful as a phosphorescent material.

Abstract: A method for producing a cyclometalated iridium complex by allowing an iridium compound and an aromatic bidentate ligand to react each other. In particular, the method is characterized by allowing a ?-diketonate salt represented by General Formula (4) to coexist in a reaction system for reaction. By adding the ?-diketonate salt into the reaction system, stability of a reaction intermediate product between the iridium compound and the aromatic bidentate ligand improves. Therefore, yield of the cyclometalated iridium complex can improve. The cyclometalated iridium complex produced in accordance with the present invention is useful as a phosphorescent material for use in an organic EL element, for example.

Abstract: The present invention provides a method for producing a cyclometalated iridium complex by use of a non-chlorine iridium raw material. The method for producing a cyclometalated iridium complex includes producing a cyclometalated iridium complex by reacting a raw material including an iridium compound with an aromatic heterocyclic bidentate ligand capable of forming an iridium-carbon bond, the raw material being non-halogenated iridium having a conjugated base of a strong acid as a ligand. Here, the non-halogenated iridium is preferably one containing a conjugated base of a strong acid having a pKa of 3 or less as a ligand.

Abstract: The present invention relates to a raw material for chemical deposition in a formula shown below and including an organoplatinum compound in which an alkenyl amine and an alkyl anion are coordinated to divalent platinum. In the formula, n is 1 or more and 5 or less. Each of substituents R1 to R5 on the alkenyl amine is a hydrogen atom, an alkyl group or the like and has a carbon number of 4 or less. Each of alkyl anions R6 and R7 is an alkyl group having a carbon number of 1 or more and 3 or less. The raw material has high vapor pressure enough to make possible the manufacturing of a platinum thin film at low temperature and also has moderate thermal stability.

Abstract: Provided is a radio communication system which enables optimal cell switching. A broker femtocell base station is installed in an entrance of the buildings, and sub-femtocell base stations are installed in the buildings. An adjacent cell list and broker femtocell priority selection setting information are set as system information notified from a macro cell, the adjacent cell list including a broker PSC of the broker femtocell base station and PSCs of adjacent macro cells, the broker femtocell priority selection setting information being the information for preferentially selecting the broker femtocell base station. An adjacent cell list and sub-femtocell priority selection setting information are set as system information of the broker femtocell, the adjacent cell list including a PSC of a macro cell, and a sub PSC of an adjacent femtocell, the sub-femtocell priority selection setting information being the information for preferentially selecting the sub-femtocell base station.

Abstract: Provided is a radio communication system which enables optimal cell switching. A broker femtocell base station is installed in an entrance of the buildings, and sub-femtocell base stations are installed in the buildings. An adjacent cell list and broker femtocell priority selection setting information are set as system information notified from a macro cell, the adjacent cell list including a broker PSC of the broker femtocell base station and PSCs of adjacent macro cells, the broker femtocell priority selection setting information being the information for preferentially selecting the broker femtocell base station. An adjacent cell list and sub-femtocell priority selection setting information are set as system information of the broker femtocell, the adjacent cell list including a PSC of a macro cell, and a sub PSC, of an adjacent femtocell, the sub-femtocell priority selection setting information being the information for preferentially selecting the sub-femtocell base station.