Patents by Inventor Russell B. Rogenski

Russell B. Rogenski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam
    Patent number: 6461948
    Abstract: A method of doping silicon that involves placing a silicon wafer in spaced relationship to a solid phosphorus dopant source at a first temperature for a time sufficient to deposit a phosphorus-containing layer on the surface of the wafer and subsequently oxidizing the doped silicon wafer with wet oxygen or pyrogenic steam at a second temperature lower than the first temperature. The silicon wafer is maintained in spaced relationship to the solid phosphorus dopant source during the oxidizing step. The temperatures are selected such that the solid phosphorus dopant source evolves P2O5 at the first temperature and the second temperature is sufficiently lower than the first temperature to decrease evolution of P2O5 from the solid phosphorus dopant source during the oxidizing step.
    Type: Grant
    Filed: March 29, 2000
    Date of Patent: October 8, 2002
    Assignee: Techneglas, Inc.
    Inventors: James E. Rapp, Russell B. Rogenski