Patents by Inventor Russell J. Hemley

Russell J. Hemley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9023307
    Abstract: The invention relates to single crystal diamond with high optical quality and methods of making the same. The diamond possesses an intensity ratio of the second-order Raman peak to the fluorescence background of around 5 or greater.
    Type: Grant
    Filed: May 17, 2011
    Date of Patent: May 5, 2015
    Assignee: Carnegie Institution of Washington
    Inventors: Russell J. Hemley, Yu-fei Meng, Chih-Shiue Yan, Ho-kwang Mao
  • Patent number: 9023306
    Abstract: The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 ?m/h.
    Type: Grant
    Filed: May 5, 2009
    Date of Patent: May 5, 2015
    Assignee: Carnegie Institution of Washington
    Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-Shiue Yan, Qi Liang
  • Patent number: 8246746
    Abstract: The present invention is directed to new laser-related uses for single-crystal diamonds produced by chemical vapor deposition. One such use is as a heat sink for a laser; another such use is as a frequency converter. The invention is also directed to a ?(3) nonlinear crystalline material for Raman laser converters comprising single crystal diamond.
    Type: Grant
    Filed: January 28, 2008
    Date of Patent: August 21, 2012
    Assignee: Carnegie Institution of Washington
    Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-Shiue Yan
  • Publication number: 20110280790
    Abstract: The invention relates to single crystal diamond with optical quality and methods of making the same. The diamond possesses an intensity ratio of the second-order. Raman peak to the fluorescence background of around 5 or greater.
    Type: Application
    Filed: May 17, 2011
    Publication date: November 17, 2011
    Applicant: Carnegie Institution of Washington
    Inventors: Russell J. Hemley, Yu-fei Meng, Chih-Shiue Yan, Ho-kwang Mao
  • Patent number: 7883684
    Abstract: The present invention relates to a method for producing colorless, single-crystal diamonds at a rapid growth rate. The method for diamond production includes controlling temperature of a growth surface of the diamond such that all temperature gradients across the growth surface of the diamond are less than about 20° C., and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond at a growth temperature in a deposition chamber having an atmosphere, wherein the atmosphere comprises from about 8% to about 20% CH4 per unit of H2 and from about 5 to about 25% O2 per unit of CH4. The method of the invention can produce diamonds larger than 10 carats. Growth rates using the method of the invention can be greater than 50 ?m/hour.
    Type: Grant
    Filed: May 23, 2006
    Date of Patent: February 8, 2011
    Assignee: Carnegie Institution of Washington
    Inventors: Russell J. Hemley, Ho-kwang Mao, Chih-shiue Yan
  • Patent number: 7820131
    Abstract: The present invention is directed to new uses and applications for colorless, single-crystal diamonds produced at a rapid growth rate. The present invention is also directed to methods for producing single crystal diamonds of varying color at a rapid growth rate and new uses and applications for such single-crystal, colored diamonds.
    Type: Grant
    Filed: September 14, 2009
    Date of Patent: October 26, 2010
    Assignee: Carnegie Institution of Washington
    Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-Shiue Yan
  • Patent number: 7754180
    Abstract: A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
    Type: Grant
    Filed: November 7, 2007
    Date of Patent: July 13, 2010
    Assignee: Carnegie Institution of Washington
    Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-shiue Yan
  • Publication number: 20100126406
    Abstract: In a method of producing diamonds by microwave plasma-assisted chemical vapor deposition which comprises providing a substrate and establishing a microwave plasma ball in an atmosphere comprising hydrogen, a carbon source and oxygen at a pressure and temperature sufficient to cause the deposition of diamond on said substrate, the improvement wherein the diamond is deposited under a pressure greater than 400 torr at a growth rate of at least 200 ?m/hr. from an atmosphere which is either essentially free of nitrogen or includes a small amount of nitrogen.
    Type: Application
    Filed: November 24, 2009
    Publication date: May 27, 2010
    Inventors: Chih-Shiue YAN, Ho-kwang MAO, Russell J. HEMLEY, Qi LIANG, Yufei MENG
  • Publication number: 20100123098
    Abstract: The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 ?m/h.
    Type: Application
    Filed: May 5, 2009
    Publication date: May 20, 2010
    Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-Shiue Yan, Qi Liang
  • Patent number: 7713507
    Abstract: A single crystal diamond grown by microwave plasma chemical vapor deposition has a hardness of 50-90 GPa and a fracture toughness of 11-20 MPa m1/2. A method for growing a single crystal diamond includes placing a seed diamond in a holder; and growing single crystal diamond at a temperature of about 1000° C. to about 1100° C. such that the single crystal diamond has a fracture toughness of 11-20 MPa m1/2.
    Type: Grant
    Filed: November 21, 2006
    Date of Patent: May 11, 2010
    Assignee: Carnegie Institution of Washington
    Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-shiue Yan
  • Publication number: 20100104494
    Abstract: The method of improving the optical properties of single crystal CVD diamond which comprises annealing the crystals at a temperature of up to 2200° C. and a pressure below 300 torr.
    Type: Application
    Filed: October 26, 2009
    Publication date: April 29, 2010
    Inventors: Yu-fei MENG, Chih-Shiue YAN, Ho-kwang MAO, Russell J. HEMLEY
  • Publication number: 20100012022
    Abstract: The present invention is directed to new uses and applications for colorless, single-crystal diamonds produced at a rapid growth rate. The present invention is also directed to methods for producing single crystal diamonds of varying color at a rapid growth rate and new uses and applications for such single-crystal, colored diamonds.
    Type: Application
    Filed: September 14, 2009
    Publication date: January 21, 2010
    Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-Shiue Yan
  • Patent number: 7594968
    Abstract: The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.
    Type: Grant
    Filed: September 9, 2005
    Date of Patent: September 29, 2009
    Assignee: Carnegie Institution of Washington
    Inventors: Russell J. Hemley, Ho-kwang Mao, Chih-shiue Yan
  • Publication number: 20090110626
    Abstract: The present invention relates to method of improving the optical properties of diamond at low pressures and more specifically to a method of producing a CVD diamond of a desired optical quality which includes growing CVD diamond and raising the temperature of the CVD diamond from about 1400° C. to about 2200° C. at a pressure of from about 1 to about 760 torr outside the diamond stability field in a reducing atmosphere for a time period of from about 5 seconds to about 3 hours.
    Type: Application
    Filed: October 2, 2008
    Publication date: April 30, 2009
    Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-Shiue Yan, Yufei Meng
  • Publication number: 20090038934
    Abstract: An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C.
    Type: Application
    Filed: October 17, 2008
    Publication date: February 12, 2009
    Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-shiue Yan, Yogesh K. Vohra
  • Patent number: 7452420
    Abstract: An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C.
    Type: Grant
    Filed: April 23, 2007
    Date of Patent: November 18, 2008
    Assignees: Carnegie Institution of Washington, The UAB Research Foundation
    Inventors: Russell J. Hemley, Ho-kwang Mao, Chih-shiue Yan, Yogesh K. Vohra
  • Publication number: 20080241049
    Abstract: A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
    Type: Application
    Filed: November 7, 2007
    Publication date: October 2, 2008
    Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-shiue Yan
  • Publication number: 20080205456
    Abstract: The present invention is directed to new laser-related uses for single-crystal diamonds produced by chemical vapor deposition. One such use is as a heat sink for a laser; another such use is as a frequency converter. The invention is also directed to a ?(3) nonlinear crystalline material for Raman laser converters comprising single crystal diamond.
    Type: Application
    Filed: January 28, 2008
    Publication date: August 28, 2008
    Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-Shiue Yan
  • Patent number: 7309477
    Abstract: A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
    Type: Grant
    Filed: April 11, 2006
    Date of Patent: December 18, 2007
    Assignee: Carnegie Institution of Washington
    Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-shiue Yan
  • Patent number: RE41189
    Abstract: Single crystal CVD diamond is heated to temperatures of 1500° C. to 2900° C. under a pressure that prevents significant graphitization. The result is a CVD diamond with improved optical properties.
    Type: Grant
    Filed: January 30, 2009
    Date of Patent: April 6, 2010
    Assignee: Carnegie Institution of Washington
    Inventors: Wei Li, Russell J. Hemley, Ho-kwang Mao, Chih-shiue Yan