Abstract: Provided herein are methods, systems, and devices incorporating use of materials to store, ship, and deliver process gases to micro-electronics fabrication processes and other critical process applications.

Abstract: Self-organizing patterns with micrometer-scale feature sizes are promising for the large area fabrication of photonic devices and scattering layers in optoelectronics. Pattern formation would ideally occur in the active semiconductor to avoid the need for further processing steps. The present disclosure includes approaches to form period patterns in single layers of organic semiconductors by an annealing process. When heated, a crystallization front propagates across the film, producing a sinusoidal surface structure with wavelengths comparable to that of near-infrared light. These surface features form initially in the amorphous region within a micron of the crystal growth front, likely due to competition between crystal growth and surface mass transport. The pattern wavelength can be tuned by varying film thickness and annealing temperature, millimeter scale domain sizes are obtained. Aspects of the disclosure can be exploited for self-assembly of microstructured organic optoelectronic devices, for example.

Abstract: Provided herein are methods, systems, and devices incorporating use of materials to store, ship, and deliver process gases to micro-electronics fabrication processes and other critical process applications.

Abstract: Provided herein are methods, systems, and devices incorporating use of materials to store, ship, and deliver process gases to micro-electronics fabrication processes and other critical process applications.

Abstract: Methods for the gas-phase delivery of gases, such as process gases, from the gas phase of a multicomponent source liquid are provided. The methods are generally directed to the generation of process gases having mass flow rates which are proportional to the input power delivered to the multicomponent source liquid containers. The methods may be used to deliver process gases to critical process applications.

Abstract: Provided herein are methods, systems, and devices incorporating use of materials to store, ship, and deliver process gases to micro-electronics fabrication processes and other critical process applications.

Abstract: Self-organizing patterns with micrometer-scale feature sizes are promising for the large area fabrication of photonic devices and scattering layers in optoelectronics. Pattern formation would ideally occur in the active semiconductor to avoid the need for further processing steps. The present disclosure includes approaches to form period patterns in single layers of organic semiconductors by an annealing process. When heated, a crystallization front propagates across the film, producing a sinusoidal surface structure with wavelengths comparable to that of near-infrared light. These surface features form initially in the amorphous region within a micron of the crystal growth front, likely due to competition between crystal growth and surface mass transport. The pattern wavelength can be tuned by varying film thickness and annealing temperature, millimeter scale domain sizes are obtained. Aspects of the disclosure can be exploited for self-assembly of microstructured organic optoelectronic devices, for example.

Abstract: Provided herein are methods, systems, and devices incorporating use of materials to store, ship, and deliver process gases to micro-electronics fabrication processes and other critical process applications.

Abstract: Provided herein are methods, systems, and devices incorporating use of materials to store, ship, and deliver process gases to micro-electronics fabrication processes and other critical process applications.

Abstract: A method and chemical delivery system are provided for low temperature atomic layer deposition. Thus, methods of forming nitrogen-containing thin films by atomic layer deposition using a substantially water free hydrazine gas and plasma treatment are provided.

Abstract: Provided herein is a device for removing residual hydrogen peroxide or hydrazine from an effluent gas stream which includes a metal oxide scrubber material configured to react with residual process gases under increased temperatures. Also provided are systems and methods of using the same.

Abstract: Provided herein are methods, systems, and devices for the vapor phase delivery of high purity process gases to a critical process or application.

Abstract: A method and chemical delivery system and device are provided. One method includes contacting a non-aqueous hydrazine solution with a carrier gas and/or vacuum and delivering a gas stream comprising hydrazine to a critical process or application. One chemical delivery system and device includes a non-aqueous hydrazine solution having a vapor phase that is in contact with a carrier gas and/or vacuum. One device includes a chamber for containing a liquid comprising at least one volatile process chemical, such as a non-aqueous hydrazine solution, a hydrogen peroxide solution, or another suitable process chemical, and a head space from which the volatile can be drawn using a carrier gas and/or vacuum. Another method useful in the present invention involves drawing a process chemical from a device as a disclosed herein using a carrier or vacuum and delivering the process chemical to a critical process or application.

Abstract: Methods and delivery systems for providing a gas phase of a multi-component liquid source for delivery to a critical process application are provided. The methods include concentration of a component of the liquid source which is less volatile than water for delivery of a gas stream comprising the less volatile component to a critical process application. Critical process applications include decontamination and microelectronic processing applications.

Abstract: Provided herein are methods, systems, and devices for the vapor phase delivery of high purity process gases to a critical process or application.

Abstract: Methods for the gas-phase delivery of gases, such as process gases, from the gas phase of a multicomponent source liquid are provided. The methods are generally directed to the generation of process gases having mass flow rates which are proportional to the input power delivered to the multicomponent source liquid containers. The methods may be used to deliver process gases to critical process applications.

Abstract: Methods, systems, and devices for decontaminating materials containing biological or biologically derived materials, such as microorganisms or DNA products, are provided. The methods, systems, and devices may be used for decontaminating or sterilizing materials, such as surfaces, including, but not limited to reducing the number of viable microorganisms on surfaces. The methods, systems, and devices may further be used for rendering DNA non-amplifiable in nucleic acid amplification reactions that synthesize DNA amplification products.

Abstract: A method and chemical delivery system and device are provided. One method includes contacting a non-aqueous hydrazine solution with a carrier gas and/or vacuum and delivering a gas stream comprising hydrazine to a critical process or application. One chemical delivery system and device includes a non-aqueous hydrazine solution having a vapor phase that is in contact with a carrier gas and/or vacuum. One device includes a chamber for containing a liquid comprising at least one volatile process chemical, such as a non-aqueous hydrazine solution, a hydrogen peroxide solution, or another suitable process chemical, and a head space from which the volatile can be drawn using a carrier gas and/or vacuum. Another method useful in the present invention involves drawing a process chemical from a device as a disclosed herein using a carrier or vacuum and delivering the process chemical to a critical process or application.

Abstract: Provided herein is a device for removing residual hydrogen peroxide or hydrazine from an effluent gas stream which includes a metal oxide scrubber material configured to react with residual process gases under increased temperatures. Also provided are systems and methods of using the same.

Abstract: Provided herein are methods, systems, and devices for the vapor phase delivery of high purity process gases to a critical process or application.