Patents by Inventor Russell J. Low

Russell J. Low has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9863032
    Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.
    Type: Grant
    Filed: November 24, 2014
    Date of Patent: January 9, 2018
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kevin M. Daniels, Russell J. Low, Nicholas P. T. Bateman, Benjamin B. Riordon
  • Publication number: 20150102237
    Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.
    Type: Application
    Filed: November 24, 2014
    Publication date: April 16, 2015
    Inventors: Kevin M. Daniels, Russell J. Low, Nicholas P.T. Bateman, Benjamin B. Riordon
  • Patent number: 9006688
    Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise a first base; and a plurality of fingers spaced apart from one another to define one or more gaps.
    Type: Grant
    Filed: April 7, 2010
    Date of Patent: April 14, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kevin M. Daniels, Russell J. Low, Benjamin B. Riordon
  • Patent number: 8937004
    Abstract: A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
    Type: Grant
    Filed: April 19, 2013
    Date of Patent: January 20, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Anthony Renau, Ludovic Godet, Timothy J. Miller, Joseph C. Olson, Vikram Singh, James Buonodono, Deepak A. Ramappa, Russell J. Low, Atul Gupta, Kevin M. Daniels
  • Patent number: 8768040
    Abstract: A method of identifying individual silicon substrates, and particularly solar cells, is disclosed. Every solar cell possesses a unique set of optical properties. The method identifies these properties and stores them in a database, where they can be associated to a particular solar cell. Unlike conventional tracking techniques, the present method requires no dedicated space on the surface of the silicon substrate. This method allows substrates to be tracked through the manufacturing process, as well as throughout the life of the substrate.
    Type: Grant
    Filed: January 14, 2011
    Date of Patent: July 1, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Benjamin Riordon, Russell J. Low
  • Patent number: 8756021
    Abstract: A method of controlling operation of an indirectly-heated cathode (IHC) ion source includes a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method includes receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.
    Type: Grant
    Filed: October 26, 2010
    Date of Patent: June 17, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell J. Low, Kevin M. Daniels, Bon-Woong Koo, Richard M. White, James W. Blanchette
  • Patent number: 8685846
    Abstract: An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: April 1, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell J. Low, William T. Weaver, Nicholas P. T. Bateman, Atul Gupta
  • Patent number: 8598547
    Abstract: Glitches during ion implantation of a workpiece, such as a solar cell, can be compensated for. In one instance, a workpiece is implanted during a first pass at a first speed. This first pass results in a region of uneven dose in the workpiece. The workpiece is then implanted during a second pass at a second speed. This second speed is different from the first speed. The second speed may correspond to the entire workpiece or just the region of uneven dose in the workpiece.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: December 3, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell J. Low, Atul Gupta, William T. Weaver
  • Patent number: 8461556
    Abstract: Blockers in an ion beam blocker unit selectively block or trim an ion beam. In one instance, the ion beam has first current regions and second current regions. These current regions may be unequal. The ion beam is then implanted into a workpiece to form regions with different doses. The workpiece may be scanned so that the entirety of its surface is implanted.
    Type: Grant
    Filed: September 8, 2010
    Date of Patent: June 11, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Daniel Distaso, Russell J. Low
  • Patent number: 8461030
    Abstract: A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
    Type: Grant
    Filed: November 16, 2010
    Date of Patent: June 11, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Anthony Renau, Ludovic Godet, Timothy J. Miller, Joseph C. Olson, Vikram Singh, James Buonodono, Deepak A. Ramappa, Russell J. Low, Atul Gupta, Kevin M. Daniels
  • Patent number: 8455847
    Abstract: In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.
    Type: Grant
    Filed: March 23, 2012
    Date of Patent: June 4, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Benjamin B. Riordon, Nicholas P. T. Bateman, William T. Weaver, Russell J. Low
  • Patent number: 8455760
    Abstract: Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.
    Type: Grant
    Filed: January 3, 2011
    Date of Patent: June 4, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell J. Low, Kasegn Tekletsadik, Anthony Renau, Piotr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Doug E. May
  • Patent number: 8330127
    Abstract: Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level.
    Type: Grant
    Filed: March 31, 2008
    Date of Patent: December 11, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell J. Low, Jay T. Scheuer, Alexander S. Perel, Craig R. Chaney, Neil J. Bassom
  • Publication number: 20120181443
    Abstract: In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.
    Type: Application
    Filed: March 23, 2012
    Publication date: July 19, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.,
    Inventors: Benjamin B. RIORDON, Nicholas P.T. Bateman, William T. Weaver, Russell J. Low
  • Publication number: 20120101742
    Abstract: A method of controlling operation of an indirectly-heated cathode (IHC) ion source comprises a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method comprises receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.
    Type: Application
    Filed: October 26, 2010
    Publication date: April 26, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Russell J. Low, Kevin M. Daniels, Bon-Woong Koo, Richard M. White, James W. Blanchette
  • Patent number: 8164068
    Abstract: In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.
    Type: Grant
    Filed: July 28, 2010
    Date of Patent: April 24, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Benjamin B. Riordon, Nicholas P. T. Bateman, William T. Weaver, Russell J. Low
  • Patent number: 8153466
    Abstract: A method of fabricating a workpiece is disclosed. A material defining apertures is applied to a workpiece. A species is introduced to the workpiece through the apertures and the material is removed. For example, the material may be evaporated, may form a volatile product with a gas, or may dissolve when exposed to a solvent. The species may be introduced using, for example, ion implantation or gaseous diffusion.
    Type: Grant
    Filed: January 19, 2010
    Date of Patent: April 10, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell J. Low, Julian G. Blake, Frank Sinclair
  • Publication number: 20120056110
    Abstract: Blockers in an ion beam blocker unit selectively block or trim an ion beam. In one instance, the ion beam has first current regions and second current regions. These current regions may be unequal. The ion beam is then implanted into a workpiece to form regions with different doses. The workpiece may be scanned so that the entirety of its surface is implanted.
    Type: Application
    Filed: September 8, 2010
    Publication date: March 8, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATED, INC.
    Inventors: Daniel DISTASO, Russell J. Low
  • Publication number: 20120043712
    Abstract: A workpiece support is disclosed in which the platen, and thus the workpiece, can be tilted about at least two axis, which allows gravity to align the workpiece with a shadow mask in two orthogonal directions. In some embodiments, the workpiece support utilizes an axis of rotation that is orthogonal to the surface of the workpiece, in conjunction with a second axis that is parallel to the surface of the workpiece. Additionally, a method of aligning the workpiece using this workpiece support is also disclosed. Further, the workpiece support can be utilized to remove the workpiece from the support after implantation is completed.
    Type: Application
    Filed: August 17, 2010
    Publication date: February 23, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: William Weaver, Russell J. Low, Steven M. Anella, Robert J. Mitchell
  • Publication number: 20120017938
    Abstract: To achieve cost efficiency, solar cells must be processed at a high throughput. Breakages, which may leave debris on the clamping surface of the platen, adversely affect this throughput. A plurality of embodiments are disclosed which may be used to remove debris from the clamping surface without breaking the vacuum condition within the processing station. In some embodiments, a brush is used to sweep the debris from the surface of the platen. In other embodiments, an adhesive material is used to collect the debris. In some embodiments, the automation equipment used to handle masks may also be used to handle the platen cleaning mechanisms. In still other embodiments, stream of gas or ion beams are used to clean debris from the clamping surface of the platen.
    Type: Application
    Filed: July 20, 2011
    Publication date: January 26, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: William T. Weaver, Kevin M. Daniels, Dale K. Stone, Russell J. Low, Benjamin B. Riordon, Jeffrey Blahnik