Patents by Inventor Ryo Kanda

Ryo Kanda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180358438
    Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate, a trench electrode provided in a trench, a trench insulating film provided between the trench electrode and the semiconductor substrate, a MOS electrode provided near the trench electrode, and a MOS insulating film provided between the MOS electrode and the semiconductor substrate, in which the semiconductor substrate includes a first semiconductor layer, a second semiconductor layer provided over the first semiconductor layer, a third semiconductor layer provided over the second semiconductor layer, a fourth semiconductor layer provided below the MOS electrode, and one and the other of fifth semiconductor layers provided on both sides of the fourth semiconductor layer, and in which the semiconductor device further includes a wiring layer that couples the one of the fifth semiconductor layers and the second semiconductor layer together.
    Type: Application
    Filed: April 18, 2018
    Publication date: December 13, 2018
    Inventor: Ryo KANDA
  • Publication number: 20180358437
    Abstract: According to an embodiment, a semiconductor device 1 includes a semiconductor substrate 50 including an upper surface, a trench electrode 22 provided inside a trench 20 formed on the upper surface, and a trench insulating film 21 provided between the trench electrode 22 and the semiconductor substrate 50. The semiconductor substrate 50 includes a first semiconductor layer of a first conductivity type, a lower end of the trench electrode 22 reaching the first semiconductor layer, a deep layer 19 of a second conductivity type partially provided on the first semiconductor layer in contact with the trench insulating film 21, a second semiconductor layer of the second conductivity type provided on the first semiconductor layer and on the deep layer 19 in contact with the trench insulating film 21, and a third semiconductor layer of the first conductivity type provided on the second semiconductor layer above the deep layer 19.
    Type: Application
    Filed: March 23, 2018
    Publication date: December 13, 2018
    Inventor: Ryo KANDA
  • Patent number: 10128200
    Abstract: A semiconductor device includes a first and second semiconductor chips, a resistive component, and a semiconductor chip including a first circuit coupled to electrodes on both ends of the resistive component. A sealing body has a first long side, a second side, a third short side, and a fourth short side. In a Y-direction, each of the first and second semiconductor chips is disposed at a position closer to the first side than to the second side, while the semiconductor chip is disposed at a position closer to the second side than to the first side. Also, in the Y-direction, the resistive component, the second semiconductor chips, and the first semiconductor chips are arranged in order of increasing distance from the third side toward the fourth side, while the semiconductor chip is disposed at a position closer to the third side than to the fourth side.
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: November 13, 2018
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Kuniharu Muto, Ryo Kanda
  • Patent number: 10086672
    Abstract: An air source device includes: a tank; a compressor; an intake valve; and an ECU configured to acquire an intake amount, which is an amount of air sucked from an outside and supplied to the tank by the compressor, based on an increasing amount of a tank pressure, which is a pressure of the air accommodated in the tank, the increasing amount being an increasing amount from a time point when the intake valve is estimated to be changed from a closed state to an opened state.
    Type: Grant
    Filed: November 25, 2016
    Date of Patent: October 2, 2018
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Hideki Ohashi, Ryo Kanda, Jun Tokumitsu, Shogo Tanaka, Kohtaroh Okimura
  • Patent number: 10081224
    Abstract: A suspension system includes: suspensions that respectively include vehicle height control actuators; a pressure medium supply-discharge device; and a vehicle height controller configured to control the pressure medium supply-discharge device to control vehicle height, wherein a magnitude of resistance that is generated during a change in the vehicle height at one or more of the suspensions is larger than a magnitude of resistance at another one or more of the suspensions, and the vehicle height controller is configured to execute vehicle height control for the wheel that corresponds to the one or more of the suspensions with the large magnitude of the resistance prior to vehicle height control for the wheel that corresponds to the other one or more of the suspensions with the small magnitude of the resistance.
    Type: Grant
    Filed: November 10, 2016
    Date of Patent: September 25, 2018
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Hideki Ohashi, Jun Tokumitsu, Ryo Kanda, Shogo Tanaka, Kohtaroh Okimura
  • Patent number: 10049968
    Abstract: To improve the reliability of a semiconductor device. A chip mounting portion TAB5 is arranged to be shifted to the +x direction side. Further, a gate electrode pad of a semiconductor chip CHP1 (LV) and a pad of a semiconductor chip CHP3 are electrically coupled by a wire W1a and a wire W1b through a relay lead RL1. Likewise, a gate electrode pad of a semiconductor chip CHP1 (LW) and the pad of the semiconductor chip CHP3 are electrically coupled by a wire W1c and a wire W1d through a relay lead RL2. At this time, the structures of parts of the relay leads RL1 and RL2, which are exposed from a sealing body MR are different from the structures of respective parts exposed from the sealing body MR, of a plurality of leads LD1 and LD2 which function as external terminals.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: August 14, 2018
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Yukihiro Sato, Akira Muto, Ryo Kanda, Takamitsu Kanazawa
  • Publication number: 20180182875
    Abstract: A high-performance trench gate IGBT is provided. A trench gate IGBT according to one embodiment includes: a semiconductor substrate (11); a channel layer (15) provided on the semiconductor substrate (11); two floating P-type layer (12) provided on both sides of the channel layer 15, the floating P-type layers (12) being deeper than the channel layer (15); two emitter trenches (13) disposed between the two floating P-type layers (12), the emitter trenches (13) being respectively in contact with the floating P-type layers (12); at least two gate trenches (14) disposed between the two emitter trenches (13); and a source diffusion layer (19) disposed between the two gate trenches 14, the source diffusion layer (19) being in contact with each of the gate trenches (14).
    Type: Application
    Filed: October 30, 2017
    Publication date: June 28, 2018
    Inventors: Ryo KANDA, Hitoshi MATSUURA, Shuichi KIKUCHI
  • Publication number: 20180182719
    Abstract: A semiconductor device includes a first and second semiconductor chips, a resistive component, and a semiconductor chip including a first circuit coupled to electrodes on both ends of the resistive component. A sealing body has a first long side, a second side, a third short side, and a fourth short side. In a Y-direction, each of the first and second semiconductor chips is disposed at a position closer to the first side than to the second side, while the semiconductor chip is disposed at a position closer to the second side than to the first side. Also, in the Y-direction, the resistive component, the second semiconductor chips, and the first semiconductor chips are arranged in order of increasing distance from the third side toward the fourth side, while the semiconductor chip is disposed at a position closer to the third side than to the fourth side.
    Type: Application
    Filed: December 6, 2017
    Publication date: June 28, 2018
    Inventors: Kuniharu MUTO, Ryo KANDA
  • Patent number: 10008561
    Abstract: A semiconductor device including a first circuit region in which a first circuit whose power supply potential is a first voltage is formed; a second circuit region in which a second circuit whose power supply potential is a second voltage lower than the first voltage is formed a separation region which separates the first circuit region from the second circuit region; and a transistor which is located in the separation region and couples the second circuit to the first circuit and whose source and drain are of a first conductivity type, the separation region including an element separation film; a first field plate which overlaps with the element separation film in plan view; a plurality of conductive films which are provided over the first field plate.
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: June 26, 2018
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Yoshinori Kaya, Yasushi Nakahara, Ryo Kanda, Tetsu Toda
  • Patent number: 10008919
    Abstract: A method of controlling a power supply to a semiconductor device including a first region having a high-side drive circuit, a second region having a signal processing circuit, a low-side drive circuit and a voltage control circuit, and a separation region formed between the first and second regions and having a rectifying element, includes turning on a first control signal to the voltage control circuit, turning off the first control signal to the voltage control circuit, and repeating the turning on of the first control signal and the turning off the first control signal.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: June 26, 2018
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Yoshinori Kaya, Yasushi Nakahara, Azuma Araya, Ryo Kanda, Tomonobu Kurihara, Tetsu Toda
  • Publication number: 20180138828
    Abstract: Reliability of a semiconductor device is improved. A third semiconductor chip on which a control circuit is formed, and a first semiconductor chip of a plurality of IGBT chips are electrically connected via a high-side relay board. That is, the first semiconductor chip and the third semiconductor chip are electrically connected via a first wire, a high-side relay board and a second wire. Similarly, the third semiconductor chip on which the control circuit is formed and a second semiconductor chip of a plurality of IGBT chips are electrically connected via a low-side relay board. That is, the second semiconductor chip and the third semiconductor chip are electrically connected via the first wire, the low-side relay board and the second wire.
    Type: Application
    Filed: January 11, 2018
    Publication date: May 17, 2018
    Inventors: Kuniharu MUTO, Koji BANDO, Takamitsu KANAZAWA, Ryo KANDA, Akihiro TAMURA, Hirobumi MINEGISHI
  • Publication number: 20180122727
    Abstract: To improve the reliability of a semiconductor device. A chip mounting portion TAB5 is arranged to be shifted to the +x direction side. Further, a gate electrode pad of a semiconductor chip CHP1 (LV) and a pad of a semiconductor chip CHP3 are electrically coupled by a wire W1a and a wire W1b through a relay lead RL1. Likewise, a gate electrode pad of a semiconductor chip CHP1 (LW) and the pad of the semiconductor chip CHP3 are electrically coupled by a wire W1c and a wire W1d through a relay lead RL2. At this time, the structures of parts of the relay leads RL1 and RL2, which are exposed from a sealing body MR are different from the structures of respective parts exposed from the sealing body MR, of a plurality of leads LD1 and LD2 which function as external terminals.
    Type: Application
    Filed: December 29, 2017
    Publication date: May 3, 2018
    Inventors: Yukihiro SATO, Akira MUTO, Ryo KANDA, Takamitsu KANAZAWA
  • Patent number: 9931900
    Abstract: An air suspension system includes a controller that controls opening/closing of normally-closed electromagnetic switching valves constituting a control valve, a first supply/discharge switching valve, a second supply/discharge switching valve, a first tank switching valve, and a second tank switching valve. The controller controls opening/closing of the electromagnetic switching valves in an order of first control, second control, and third control. In the first control, the control valve is opened. In the second control, the first supply/discharge switching valve and the second supply/discharge switching valve are opened in an opened state of the control valve. In the third control, the control valve, the first supply/discharge switching valve, and the second supply/discharge switching valve are closed.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: April 3, 2018
    Assignees: AISIN SEIKI KABUSHIKI KAISHA, TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masaaki Oishi, Hideki Ohashi, Jun Tokumitsu, Ryo Kanda
  • Publication number: 20180076614
    Abstract: To realize a reduction in the number of parts in a system including a driver IC (semiconductor device). A high potential side power supply voltage is applied to a power supply application area. A high side area is formed with a circuit which includes a driver driving a high side transistor and is operated at a boot power supply voltage with a floating voltage as a reference. A low side area is formed with a circuit operated at a power supply voltage with a low potential side power supply voltage as a reference. A first termination area is disposed in a ring form so as to surround the power supply application area. A second termination area is disposed in a ring form so as to surround the high side area.
    Type: Application
    Filed: September 12, 2017
    Publication date: March 15, 2018
    Inventors: Ryo KANDA, Hiroshi KUROIWA, Tetsu TODA, Yasushi NAKAHARA
  • Patent number: 9906165
    Abstract: Reliability of a semiconductor device is improved. A third semiconductor chip on which a control circuit is formed, and a first semiconductor chip of a plurality of IGBT chips are electrically connected via a high-side relay board. That is, the first semiconductor chip and the third semiconductor chip are electrically connected via a first wire, a high-side relay board and a second wire. Similarly, the third semiconductor chip on which the control circuit is formed and a second semiconductor chip of a plurality of IGBT chips are electrically connected via a low-side relay board. That is, the second semiconductor chip and the third semiconductor chip are electrically connected via the first wire, the low-side relay board and the second wire.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: February 27, 2018
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Kuniharu Muto, Koji Bando, Takamitsu Kanazawa, Ryo Kanda, Akihiro Tamura, Hirobumi Minegishi
  • Patent number: 9887151
    Abstract: To improve the reliability of a semiconductor device. A chip mounting portion TAB5 is arranged to be shifted to the +x direction side. Further, a gate electrode pad of a semiconductor chip CHP1 (LV) and a pad of a semiconductor chip CHP3 are electrically coupled by a wire W1a and a wire W1b through a relay lead RL1. Likewise, a gate electrode pad of a semiconductor chip CHP1 (LW) and the pad of the semiconductor chip CHP3 are electrically coupled by a wire W1c and a wire W1d through a relay lead RL2. At this time, the structures of parts of the relay leads RL1 and RL2, which are exposed from a sealing body MR are different from the structures of respective parts exposed from the sealing body MR, of a plurality of leads LD1 and LD2 which function as external terminals.
    Type: Grant
    Filed: June 6, 2016
    Date of Patent: February 6, 2018
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Yukihiro Sato, Akira Muto, Ryo Kanda, Takamitsu Kanazawa
  • Patent number: 9866207
    Abstract: A driver integrated circuit includes a bootstrap circuit (BSC) configured to output a boot power supply voltage (VB) based on a first power supply voltage, the boot power supply voltage being higher than the first power supply voltage; a level shift circuit (LSC) configured to output an output pulse signal based on an input pulse signal and the boot power supply voltage; a high side driving circuit (HSU) configured to output a high side driving voltage based on the boot power supply voltage and the output pulse signal, wherein the bootstrap circuit includes a sense metal oxide semiconductor (MOS) transistor and a boot MOS transistor, wherein the sense MOS transistor includes a depression-type transistor.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: January 9, 2018
    Assignee: Renesas Electronics Corporation
    Inventors: Ryo Kanda, Tetsu Toda, Junichi Nakamura, Kazuyuki Umezu, Tomonobu Kurihara, Takahiro Nagatsu, Yasushi Nakahara, Yoshinori Kaya
  • Publication number: 20170341480
    Abstract: An air suspension system includes a controller that controls opening/closing of normally-closed electromagnetic switching valves constituting a control valve, a first supply/discharge switching valve, a second supply/discharge switching valve, a first tank switching valve, and a second tank switching valve. The controller controls opening/closing of the electromagnetic switching valves in an order of first control, second control, and third control. In the first control, the control valve is opened. In the second control, the first supply/discharge switching valve and the second supply/discharge switching valve are opened in an opened state of the control valve. In the third control, the control valve, the first supply/discharge switching valve, and the second supply/discharge switching valve are closed.
    Type: Application
    Filed: May 25, 2017
    Publication date: November 30, 2017
    Applicants: AISIN SEIKI KABUSHIKI KAISHA, TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masaaki OISHI, Hideki OHASHI, Jun TOKUMITSU, Ryo KANDA
  • Patent number: 9821622
    Abstract: A vehicle-height adjusting system includes: vehicle-height adjusting actuators each for adjusting a vehicle height for a corresponding one of wheels; a pressure medium supplier for supplying a pressure medium from a tank to each of the vehicle-height adjusting actuators; and a vehicle height adjuster for adjusting the vehicle height for each wheel. The vehicle-height adjusting actuators include a left vehicle-height adjusting actuator and a right vehicle-height adjusting actuator. The vehicle height adjuster includes a supply amount controller configured to control the pressure medium supplier such that substantially the same amount of the pressure medium is to be supplied from the tank to the left vehicle-height adjusting actuator and the right vehicle-height adjusting actuator, when at least one of the wheels is in contact with an uneven road surface.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: November 21, 2017
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Hideki Ohashi, Kohtaroh Okimura, Ryo Kanda, Shogo Tanaka, Jun Tokumitsu
  • Publication number: 20170274720
    Abstract: A vehicle-height control system includes: a fluid supply and discharge device including a compressor device and a tank storing fluid pressurized by the compressor device; a vehicle-height control actuator corresponding to a wheel and connected to the fluid supply and discharge device; a vehicle height controller that controls a vehicle height for the wheel by controlling the fluid supply and discharge device to control supply and discharge of fluid to and from the vehicle-height control actuator; a tank pressure controller that controls a tank pressure; and a fluid supply controller that supplies the fluid to a low pressure portion by controlling the fluid supply and discharge device at start and/or termination of at least one of control executed by the vehicle height controller and control executed by the tank pressure controller. The low pressure portion is at least a portion of the fluid supply and discharge device.
    Type: Application
    Filed: February 17, 2017
    Publication date: September 28, 2017
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, AISIN SEIKI KABUSHIKI KAISHA
    Inventors: Ikuhide IYODA, Takayuki TACHI, Hideki OHASHI, Katsuyuki SANO, Jun TOKUMITSU, Ryo KANDA, Shogo TANAKA, Masao IKEYA, Masaaki OISHI