Abstract: A light-emitting device includes a drive transistor for controlling the quantity of current supplied to a light-emitting element, a capacitor element electrically connected to a gate electrode of the drive transistor, and an electrical continuity portion for electrically connecting the drive transistor and the light-emitting element, these elements being disposed on a substrate. The electrical continuity portion is disposed on the side opposite to the capacitor element with the drive transistor disposed therebetween.

Abstract: An organic electroluminescent device includes a first transistor, a power supply line layer connected to one current terminal of the first transistor, a capacitive element including a first capacitive electrode connected to a gate of the first transistor, and a second capacitive electrode, a signal line, and a pixel electrode connected to the other current terminal of the first transistor, the first capacitive electrode is provided on a layer over the gate of the first transistor, and the power supply line layer is provided on a layer between the first capacitive electrode and the signal line.

Abstract: Subpixels of R, G, and B corresponding to a scanning line extended in a row direction and a data transfer line extended in a column direction are provided. A plurality of transistors in the subpixel of each of the colors is disposed along the column direction, and a reflective layer in the subpixel of at least one color is disposed along the row direction so as to overlap any transistor of subpixels of each display color. A power source wiring is disposed between the reflective layer and the transistor along the row direction, so as to overlap the transistor. Relay electrodes which connects the reflective layer and any transistor of subpixels of each display color are formed on a layer between a layer on which the power source wiring is formed, and the reflective layer.

Abstract: An organic electroluminescent device includes a first transistor, a power supply line layer connected to one current terminal of the first transistor, a capacitive element including a first capacitive electrode connected to a gate of the first transistor, and a second capacitive electrode, a signal line, and a pixel electrode connected to the other current terminal of the first transistor, the first capacitive electrode is provided on a layer over the gate of the first transistor, and the power supply line layer is provided on a layer between the first capacitive electrode and the signal line.

Abstract: Subpixels of R, G, and B corresponding to a scanning line as a first conductive layer extended in a row direction and a data transfer line as a second conductive layer extended in a column direction are provided. A plurality of transistors in the subpixel of each of the colors is disposed along the column direction, and a reflective layer in the subpixel of at least one color is disposed along the row direction so as to overlap any transistor of subpixels of each display color. A center position of a disposition region of a reflective layer in one pixel unit including the subpixels of R, G, and B is different from a center position of a disposition region of a transistor in one pixel unit.

Abstract: An organic EL device has at least a first pixel and a second pixel different in the optical path length, in which the first pixel and the second pixel have a reflective layer, a protective layer, an optical path length adjusting layer, a first electrode, a light emitting function layer, and a second electrode, and the optical path length adjusting layer is an insulating layer and has a refractive index higher than a refractive index of the protective layer.

Abstract: There is provided an organic EL apparatus as an electro-optic apparatus including: a substrate; a light-emitting element that is provided at a first area of the substrate; a guard line that is provided to surround the first area; and a sealing film or a sealing structure that covers the first area and reaches the guard line.

Abstract: Subpixels of R, G, and B corresponding to a scanning line extended in a row direction and a data transfer line extended in a column direction are provided. A plurality of transistors in the subpixel of each of the colors is disposed along the column direction, and a reflective layer in the subpixel of at least one color is disposed along the row direction so as to overlap any transistor of subpixels of each display color. A power source wiring is disposed between the reflective layer and the transistor along the row direction, so as to overlap the transistor. Relay electrodes which connects the reflective layer and any transistor of subpixels of each display color are formed on a layer between a layer on which the power source wiring is formed, and the reflective layer.

Abstract: Subpixels of R, G, and B corresponding to a scanning line as a first conductive layer extended in a row direction and a data transfer line as a second conductive layer extended in a column direction are provided. A plurality of transistors in the subpixel of each of the colors is disposed along the column direction, and a reflective layer in the subpixel of at least one color is disposed along the row direction so as to overlap any transistor of subpixels of each display color. A center position of a disposition region of a reflective layer in one pixel unit including the subpixels of R, G, and B is different from a center position of a disposition region of a transistor in one pixel unit.

Abstract: A first light-emitting element and a second light-emitting element that have a resonance structure that causes output light from a light-emission functional layer to resonate between a reflective layer and a semi-transmissive reflective layer, and a pixel definition layer, and in which an aperture part is formed to correspond to each of the first light-emitting element and the second light-emitting element, are formed on a base. A first interval between the reflective layer and the semi-transmissive reflective layer in the first light-emitting element and a second interval between the reflective layer and the semi-transmissive reflective layer in the second light-emitting element are different, and a film thickness of the pixel definition layer is less than a difference between the first interval and the second interval.

Abstract: There is provided a light emitting device including: a semiconductor substrate; a plurality of pixel circuits that is disposed in a display region of the semiconductor substrate; a first wiring that is formed of a conductive material so as to be supplied with a predetermined electric potential; and a plurality of first contact portions that is formed of a conductive material so as to connect the semiconductor substrate and the first wiring. The plurality of first contact portions and the first wiring are provided in the display region.

Abstract: An organic electroluminescent device includes a first transistor, a power supply line layer connected to one current terminal of the first transistor, a capacitive element including a first capacitive electrode connected to a gate of the first transistor, and a second capacitive electrode, a signal line, and a pixel electrode connected to the other current terminal of the first transistor, the first capacitive electrode is provided on a layer over the gate of the first transistor, and the power supply line layer is provided on a layer between the first capacitive electrode and the signal line.

Abstract: A light-emitting device includes a light-emitting element disposed in a display region and including a first electrode, a second electrode, and a light-emitting functional layer. The light-emitting device includes a wiring formed in a periphery of the display region and that is electrically connected to the second electrode, and a filter layer having a first color filter that overlaps the light-emitting element and a first layer that overlaps the peripheral wiring. The first color filter and the first layer are formed from a first colored layer that transmits light having a first wavelength.

Abstract: There is provided a light emitting device including: a semiconductor substrate; a plurality of pixel circuits that is disposed in a display region of the semiconductor substrate; a first wiring that is formed of a conductive material so as to be supplied with a predetermined electric potential; and a plurality of first contact portions that is formed of a conductive material so as to connect the semiconductor substrate and the first wiring. The plurality of first contact portions and the first wiring are provided in the display region.

Abstract: A first light-emitting element and a second light-emitting element that have a resonance structure that causes output light from a light-emission functional layer to resonate between a reflective layer and a semi-transmissive reflective layer, and a pixel definition layer, and in which an aperture part is formed to correspond to each of the first light-emitting element and the second light-emitting element, are formed on a base. A first interval between the reflective layer and the semi-transmissive reflective layer in the first light-emitting element and a second interval between the reflective layer and the semi-transmissive reflective layer in the second light-emitting element are different, and a film thickness of the pixel definition layer is less than a difference between the first interval and the second interval.

Abstract: A second data transfer line that is coupled to a gate layer of a drive transistor is formed in a layer higher than the gate layer, and a transfer capacitor is formed in a layer higher than a layer having the second data transfer line. A first data transfer line to which a data signal is supplied is formed in a layer higher than a layer having the transfer capacitor.

Abstract: An electro-optical device includes a first electrode that is coupled to a first data transfer line, a second electrode that is coupled to a second data transfer line. The first and second electrodes are respectively formed in different layers. A first capacitor is formed of the first electrode, the second electrode, and a dielectric film between the first electrode and the second electrode. In addition, a power supplying line and the first data transfer line are formed in a same layer. A second capacitor is formed of the power supplying line, the first data transfer line, and an insulating layer between the power supplying line and the first data transfer line.

Abstract: An electro-optical apparatus includes a first pixel and a second pixel. The first pixel and the second pixel include a reflective layer, an insulating layer, a functional layer, and an opposing electrode. The insulating layer includes a first insulating layer, a second insulating layer having a first opening, and a third insulating layer having a second opening. A first pixel electrode is provided on the first insulating layer in the first opening. A second pixel electrode is provided on the second insulating layer.

Abstract: An organic electroluminescent device includes a first transistor, a power supply line layer connected to one current terminal of the first transistor, a capacitive element including a first capacitive electrode connected to a gate of the first transistor, and a second capacitive electrode, a signal line, and a pixel electrode connected to the other current terminal of the first transistor, the first capacitive electrode is provided on a layer over the gate of the first transistor, and the power supply line layer is provided on a layer between the first capacitive electrode and the signal line.

Abstract: A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.