Patents by Inventor Ryoichi Takayama

Ryoichi Takayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6105225
    Abstract: A method of manufacturing a small, light, highly accurate and inexpensive thin film sensor element is disclosed. The thin film sensor element comprises a sensor holding substrate having an opening part and a multilayer film structure adhered thereon. The multilayer film structure comprises a first electrode film, a second electrode film, and a piezoelectric dielectric oxide film present between the first and second electrode films. The method of manufacturing the thin film sensor element comprises the steps of: forming the multilayer film structure by forming the first electrode film having a (100) plane orientation on a surface of an alkali halide substrate, forming the piezoelectric dielectric oxide thereon, and forming the second electrode film on the piezoelectric dielectric oxide; adhering the multilayer film structure on the surface of the sensor holding substrate having the opening part; and dissolving and removing the alkali halide substrate with water.
    Type: Grant
    Filed: February 9, 1996
    Date of Patent: August 22, 2000
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hideo Torii, Takeshi Kamada, Shigenori Hayashi, Ryoichi Takayama, Takashi Hirao, Masumi Hattori
  • Patent number: 6081182
    Abstract: The present invention provides a temperature sensor element having excellent heat resistance, quick heat response, stable resistance, and high reliability with a less variation in resistance against time. The temperature sensor element includes a thermo-sensitive film mainly composed of a heat sensitive material having electrical resistance varies depending on the temperature; a pair of electrode films arranged to measure the electrical resistance in the direction of the thickness of the thermo-sensitive film, a base plate mainly composed of a heat-resistant insulating material for supporting the thermo-sensitive film and the electrode films, an anti-diffusion film interposed between the thermo-sensitive film and the electrode film in the vicinity of the base plate, and a film mainly composed of a heat-resistant insulating material for covering the thermo-sensitive film and the electrode films except the lead-connecting terminals of the electrode films.
    Type: Grant
    Filed: November 14, 1997
    Date of Patent: June 27, 2000
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Atsushi Tomozawa, Eiji Fujii, Hideo Torii, Ryoichi Takayama
  • Patent number: 6014073
    Abstract: A temperature sensor element for measuring the temperature of exhaust gas from car engines comprises a metallic support having a shape of a flat board, a first electric-insulating film existing on the support, a first temperature sensitive film existing on the first electric-insulating film and having a pair of electrodes, and a second electric-insulating film existing on the temperature sensitive film. The element is superior in thermal shock resistance. The element needs no heat-resistant cap. The element is superior in heat-response since the element has a small heat capacity.
    Type: Grant
    Filed: January 10, 1997
    Date of Patent: January 11, 2000
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hideo Torii, Takeshi Kamada, Atsushi Tomozawa, Eiji Fujii, Ryoichi Takayama, Hiroki Moriwake
  • Patent number: 5989395
    Abstract: A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, [(1-x).Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.
    Type: Grant
    Filed: October 11, 1996
    Date of Patent: November 23, 1999
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Atsushi Tomozawa, Satoru Fujii, Eiji Fujii, Ryoichi Takayama, Masafumi Kobune, Satoshi Fujii
  • Patent number: 5876504
    Abstract: The present invention relates to a process for producing crystallographic oriented oxide thin films having an NaCl-type structure, a spinel structure or a Wurtzite structure used as a buffer layer to obtain a functional oxide thin film such as a superconductive oxide thin film and a ferroelectric thin film, and a chemical vapor deposition apparatus used therefor. A rotatable substrate holder is provided in a reaction chamber. The substrate holder, which holds substrates thereunder, includes a substrate heater. The substrate holder is grounded to provide an electrode. Another electrode, which is connected to a high frequency power source, is located opposing the substrate holder in the reaction chamber. At a side wall of the reaction chamber, an exhaust is arranged. In a plasma electric discharge area formed between the substrate holder and the electrode, a material gas supplier is located, having a predetermined tilt angle .theta. with respect to the substrate holder.
    Type: Grant
    Filed: September 17, 1997
    Date of Patent: March 2, 1999
    Assignee: Matsushita Electric Industrial Co., Ltd
    Inventors: Eiji Fuji, Atsushi Tomozawa, Hideo Torii, Ryoichi Takayama
  • Patent number: 5868948
    Abstract: A method for fabricating a dielectric device including a capacitor, a pyroelectric infrared detector, and the like is disclosed. The method comprises the steps of etching a dielectric substance film formed on a substrate to form a predetermined pattern with an etchant comprised of hydrofluoric acid and an oxidizing agent, and removing residues resulting from the etching by treating the etched layer with a first treating solution containing a reducing agent and subsequently with a second treating solution containing an acid.
    Type: Grant
    Filed: October 1, 1996
    Date of Patent: February 9, 1999
    Assignee: Matsushita Electric Industrial Co. Ltd.
    Inventors: Satoru Fujii, Ryoichi Takayama, Takeshi Kamada, Atsushi Tomozawa
  • Patent number: 5866238
    Abstract: A first ferroelectric thin film device is provided with a first substrate consisting of polycrystal, amorphous material or metal material and a first ferroelectric thin film formed on the first substrate. The average of thermal expansion coefficients of the substrate from room temperature to temperature for forming the ferroelectric thin film is 70.times.10.sup.-7 /.degree.C. or more. At least 75% of crystal axes of the first ferroelectric thin film are oriented in <001>-direction. A second ferroelectric thin film device is provided with a second substrate consisting of amorphous material and a second ferroelectric thin film formed on the second substrate. The average of thermal expansion coefficients of the substrate from room temperature to temperature for forming the ferroelectric thin film is 50.times.10.sup.-7 /.degree.C. or less. At least 75% of crystal axes of the second ferroelectric thin film are oriented in <100>direction.
    Type: Grant
    Filed: March 4, 1997
    Date of Patent: February 2, 1999
    Assignee: Minolta Co., Ltd.
    Inventors: Ryoichi Takayama, Yoshihiro Tomita, Satoru Fujii, Masayuki Okano, Hideo Torii, Eiji Fujii, Atsushi Tomozawa
  • Patent number: 5844347
    Abstract: A SAW device comprising an inter-digital electrode capable of withstanding application of excessive electric power, while preventing an increase of insertion loss. The SAW device has an inter-digital electrode formed by alternating layers of aluminum films and conductive films, where the conductive films have an elastic constant greater than that of the aluminum films.
    Type: Grant
    Filed: August 29, 1996
    Date of Patent: December 1, 1998
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Ryoichi Takayama, Keizaburo Kuramasu, Toshio Sugawa
  • Patent number: 5755888
    Abstract: An apparatus of forming thin films, which is small and requires a short thin-film formation time, is provided which comprises at least one physical vapor deposition device and at least one chemical vapor deposition device, wherein said physical vapor deposition device and said chemical vapor deposition device are provided with an exhaust pipe respectively for connection with a common exhaust means and an exhaust switching means. A method of forming thin films using this apparatus is also provided. According to the configuration in which the exhaust switching means is connected via exhaust pipes to the physical vapor deposition device, to the chemical vapor deposition device, and to the exhaust means, this apparatus can be accomplished in a small size which has at least two chambers and one exhaust means.
    Type: Grant
    Filed: August 23, 1995
    Date of Patent: May 26, 1998
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hideo Torii, Eiji Fujii, Shigenori Hayashi, Ryoichi Takayama
  • Patent number: 5717157
    Abstract: A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, ?(1-x).multidot.Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.
    Type: Grant
    Filed: November 30, 1994
    Date of Patent: February 10, 1998
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Atsushi Tomozawa, Satoru Fujii, Eiji Fujii, Ryoichi Takayama, Masafumi Kobune, Satoshi Fujii
  • Patent number: 5712001
    Abstract: The present invention relates to a process for producing crystallographic oriented oxide thin films having an NaCl-type structure, a spinel structure or a Wurtzite structure used as a buffer layer to obtain a functional oxide thin film such as a superconductive oxide thin film and a ferroelectric thin film, and a chemical vapor deposition apparatus used therefor. A rotatable substrate holder is provided in a reaction chamber. The substrate holder, which holds substrates thereunder, includes a substrate heater. The substrate holder is grounded to provide an electrode. Another electrode, which is connected to a high frequency power source, is located opposing the substrate holder in the reaction chamber. At a side wall of the reaction chamber, an exhaust is arranged. In a plasma electric discharge area formed between the substrate holder and the electrode, a material gas supplier is located, having a predetermined tilt angle .theta. with respect to the substrate holder.
    Type: Grant
    Filed: March 20, 1996
    Date of Patent: January 27, 1998
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Eiji Fujii, Atsushi Tomozawa, Hideo Torii, Ryoichi Takayama
  • Patent number: 5674366
    Abstract: A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: October 7, 1997
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shigenori Hayashi, Kazuki Komaki, Takeshi Kamada, Masatoshi Kitagawa, Takashi Deguchi, Ryoichi Takayama, Takashi Hirao
  • Patent number: 5672252
    Abstract: A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.
    Type: Grant
    Filed: June 15, 1995
    Date of Patent: September 30, 1997
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shigenori Hayashi, Kazuki Komaki, Takeshi Kamada, Masatoshi Kitagawa, Takashi Deguchi, Ryoichi Takayama, Takashi Hirao
  • Patent number: 5663089
    Abstract: A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: September 2, 1997
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Atsushi Tomozawa, Eiji Fujii, Hideo Torii, Masumi Hattori, Satoru Fujii, Ryoichi Takayama
  • Patent number: 5612536
    Abstract: A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element. On the surface of a flat plate KBr substrate, a rock-salt crystal structure oxide of a conductive NiO is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to <100> direction against the substrate surface. By means of a sputtering method, a PZT film is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film is formed thereon.
    Type: Grant
    Filed: January 19, 1995
    Date of Patent: March 18, 1997
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hideo Torii, Takeshi Kamada, Shigenori Hayashi, Ryoichi Takayama, Takashi Hirao, Masumi Hattori
  • Patent number: 5521454
    Abstract: A surface wave filter element includes a portion on which elastic surface waves propagate. This portion includes a piezoelectric material, an amorphous boron layer or plate and IDT electrodes for inputting and outputting signals. The piezoelectric material is a film made of ZnO, LiNbO.sub.3 or LiTaO.sub.3 formed by sputtering, ion beam deposition or chemical vapor deposition. The amorphous boron layer or boron plate may be formed on a substrate made of an inorganic material. The boron material is formed using electron beam deposition, ion beam deposition or chemical vapor deposition.
    Type: Grant
    Filed: September 9, 1994
    Date of Patent: May 28, 1996
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Masumi Hattori, Hideo Torii, Masaki Aoki, Eiji Fujii, Atsushi Tomozawa, Ryoichi Takayama, Ken Kamata, Yasuhiko Horio
  • Patent number: 5488770
    Abstract: A vehicle such as a railroad car is constructed by connecting together side and roof blocks, each equipped with interior components, in a manner to improve the outer appearance of the connections between the side and roof blocks. Longitudinal beams of the side blocks are in contact with the under surfaces of gutters formed by the outer plate of the roof block. The side and roof blocks, equipped with the interior components, are connected together at the gutter portions by a welding which can be conducted solely outside the vehicle. Inside the vehicle, the longitudinal beams and joints secured to the side blocks are connected to lateral beams of the roof block by rivets. Thereafter, a third interior plate is provided between interior plates of the side and roof blocks. Since the connections are formed at the gutter portions, the connecting operations can easily be conducted outside the vehicle and in a manner to assure a good outer appearance.
    Type: Grant
    Filed: June 1, 1994
    Date of Patent: February 6, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Toshihisa Yamada, Toshiharu Miyamoto, Kazuo Hayashi, Ryoichi Takayama, Shinji Kobayashi, Keizi Ohmura
  • Patent number: 5483067
    Abstract: A pyroelectric infrared detector includes a substrate having a recess. A pyroelectric portion substantially aligns with the recess. A resin film is located between the substrate and the pyroelectric portion. The recess faces the resin film. First and second electrodes are connected to first and second surfaces of the pyroelectric portion respectively. The pyroelectric portion may include a pyroelectric film of Pb.sub.x La.sub.y Ti.sub.z Zr.sub.w O.sub.3 where atomic fractions "w", "x", "y", and "z" satisfy one of following conditions a), b), and c):a) 0.7.ltoreq.x.ltoreq.1, x+y=1, 0.925.ltoreq.z.ltoreq.1, w=0b) x=1, y=0, 0.45.ltoreq.z<1, z+w=1c) 0.75.ltoreq.x<1, x+y=1, 0.5.ltoreq.
    Type: Grant
    Filed: January 17, 1995
    Date of Patent: January 9, 1996
    Assignee: Matsuhita Electric Industrial Co., Ltd.
    Inventors: Satoru Fujii, Ryoichi Takayama, Yoshihiro Tomita, Masayuki Okano, Hideo Torii
  • Patent number: 5459635
    Abstract: A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.
    Type: Grant
    Filed: March 22, 1994
    Date of Patent: October 17, 1995
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Atsushi Tomozawa, Eiji Fujii, Hideo Torii, Masumi Hattori, Satoru Fujii, Ryoichi Takayama
  • Patent number: 5413667
    Abstract: A pyroelectric infrared detector includes a substrate having a recess. A pyroelectric portion substantially aligns with the recess. A resin film is located between the substrate and the pyroelectric portion. The recess faces the resin film. First and second electrodes are connected to first and second surfaces of the pyroelectric portion respectively. The pyroelectric portion may include a pyroelectric film of Pb.sub.x La.sub.y Ti.sub.z Zr.sub.w O.sub.3 where atomic fractions "w", "x", "y", and "z" satisfy one of following conditions a), b), and c):a) 0.7.ltoreq.x.ltoreq.1, x+y=1, 0.925.ltoreq.z.ltoreq.1, w=0b) x=1, y=0, 0.45.ltoreq.z<1, z+w=1c) 0.75.ltoreq.x<1, x+y=1, 0.5.ltoreq.z<1, z+w=1.
    Type: Grant
    Filed: October 13, 1993
    Date of Patent: May 9, 1995
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Satoru Fujii, Ryoichi Takayama, Yoshihiro Tomita, Masayuki Okano, Hideo Torii