Patents by Inventor Ryoji Abe

Ryoji Abe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4541399
    Abstract: A V-type internal combustion engine having cam shafts respectively provided in first spaces defined between cylinder heads and head covers of a pair of upwardly diverging cylinder banks and a breather arrangement which includes a pressure buffer chamber provided between the cylinder banks of a cylinder block and having side walls constituted by cylinder block walls of said cylinder banks so as to be closed at its upper portion and communicated with an interior of a crankcase, and a communicating passage for communicating said pressure buffer chamber with an intake passage at a downstream of a throttle valve, and a baffle plate provided in said pressure buffer chamber to confront the open end of said communicating passage.
    Type: Grant
    Filed: February 29, 1984
    Date of Patent: September 17, 1985
    Assignee: Mazda Motor Corporation
    Inventors: Toshimitsu Tanaka, Ryoji Abe, Koji Asanomi
  • Patent number: 4343080
    Abstract: In a case where a semiconductor device is produced comprising at least one semiconductor element, an isolation region surrounding the semiconductor element and a thick silicon oxide layer lying on and around the semiconductor element, the thick oxide layer is formed by thermally-oxidizing the epitaxial layer having a buried layer and, at the same time, the isolation region is formed in the epitaxial layer by heating for thermal oxidation. Prior to a step of introducing impurities into the epitaxial layer, a patterned thin silicon oxide layer is formed. This thin silicon oxide layer is varied into the thick oxide layer by the thermal-oxidation treatment.
    Type: Grant
    Filed: May 30, 1980
    Date of Patent: August 10, 1982
    Assignee: Fijitsu Limited
    Inventors: Osamu Hataishi, Yoshinobu Momma, Ryoji Abe
  • Patent number: 4305974
    Abstract: A semiconductor device with multilayer wirings can be produced with high yield by applying a liquid source for silicate film to a surface of a chemically vapor deposited insulating layer placed on a surface of the semiconductor substrate in order to provide a smoothed surface. After solidification of the liquid source, the substrate is subjected to a controlled etching to leave the same contour as the one of the smoothed surface on the resultant surface. An upper wiring layer is placed on the resultant smoothed surface in contact with a lower wiring layer through the insulating layer thereby decreasing disconnections in the upper wiring layer which could easily be caused by steep edges existing on an insulating surface layer of a conventional device.
    Type: Grant
    Filed: August 8, 1980
    Date of Patent: December 15, 1981
    Assignee: Fujitsu Limited
    Inventors: Ryoji Abe, Makoto Serigano, Shuji Tabuchi
  • Patent number: RE31652
    Abstract: In a case where a semiconductor device is produced comprising at least one semiconductor element, an isolation region surrounding the semiconductor element and a thick silicon oxide layer lying on and around the semiconductor element, the thick oxide layer is formed by thermally-oxidizing the epitaxial layer having a buried layer and, at the same time, the isolation region is formed in the epitaxial layer by heating for thermal oxidation. Prior to a step of introducing impurities into the epitaxial layer, a patterned thin silicon oxide layer is formed. This thin silicon oxide layer is varied into the thick oxide layer by the thermal-oxidation treatment.
    Type: Grant
    Filed: August 29, 1983
    Date of Patent: August 28, 1984
    Assignee: Fujitsu Limited
    Inventors: Osamu Hataishi, Yoshinobu Momma, Ryoji Abe