Patents by Inventor Ryosuke Taniguchi

Ryosuke Taniguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8795942
    Abstract: There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).
    Type: Grant
    Filed: December 11, 2007
    Date of Patent: August 5, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tomohiro Kobayashi, Youichi Ohsawa, Ryosuke Taniguchi
  • Patent number: 8748076
    Abstract: There is disclosed a resist composition comprising at least: (A) a polymer containing one or more repeating units having a structure shown by the following general formula (1) and/or (2), an alkaline-solubility of the polymer being increased by an acid, (B) a photo acid generator generating, with responding to a high energy beam, a sulfonic acid shown by the following general formula (3), and (C) an onium sulfonate shown by the following general formula (4). There can be a resist composition showing not only excellent LWR and pattern profile but also extremely good performance in pattern-fall resistance, and to provide a patterning process using the same.
    Type: Grant
    Filed: January 6, 2012
    Date of Patent: June 10, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takayuki Nagasawa, Tomohiro Kobayashi, Ryosuke Taniguchi, Masaki Ohashi
  • Patent number: 8703384
    Abstract: A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.
    Type: Grant
    Filed: November 23, 2011
    Date of Patent: April 22, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tomohiro Kobayashi, Eiji Fukuda, Takayuki Nagasawa, Ryosuke Taniguchi, Youichi Ohsawa, Masayoshi Sagehashi, Yoshio Kawai
  • Patent number: 8628908
    Abstract: A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: January 14, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takeru Watanabe, Tomohiro Kobayashi, Masayoshi Sagehashi, Takeshi Nagata, Youichi Ohsawa, Ryosuke Taniguchi
  • Publication number: 20130236832
    Abstract: There is disclosed an acid generator generating a sulfonic acid represented by the following general formula (1) in response to high-energy beam or heat: As a result, there is provided a novel acid generator which is suitably used as an acid generator for a resist composition, which solves the problems of exposure margin and MEF particularly without degradation of resolution and can be effectively and widely used, a chemically amplified resist composition using the same, and a patterning process.
    Type: Application
    Filed: February 19, 2013
    Publication date: September 12, 2013
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masaki OHASHI, Takayuki NAGASAWA, Ryosuke TANIGUCHI
  • Publication number: 20130101936
    Abstract: A positive resist composition comprising (A) a polymer comprising recurring units containing an acid labile group, recurring units having a lactone ring, and recurring units having an oxirane ring, the polymer being adapted to increase alkaline dissolution under the action of an acid, (B) a photoacid generator, and (C) a solvent forms a fine pattern with improved LWR, improved MEF, rectangular profile, and collapse resistance.
    Type: Application
    Filed: September 14, 2012
    Publication date: April 25, 2013
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Ryosuke Taniguchi, Tomohiro Kobayashi, Jun Hatakeyama, Kenji Funatsu, Masahiro Kanayama
  • Publication number: 20130065179
    Abstract: There is disclosed a positive resist composition comprising (A) a specific resin (B) a photo acid generator, (C) a basic compound, and (D) a solvent. There can be a positive resist composition having, in a photolithography using a high energy beam such as an ArF excimer laser beam as a light source, an excellent resolution, especially excellent depth of focus (DOF) characteristics with an excellent pattern profile, and in addition, in formation of a contact hole pattern, giving a pattern having excellent circularity and high rectangularity; and a patterning process using this positive resist composition.
    Type: Application
    Filed: September 5, 2012
    Publication date: March 14, 2013
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Kazunori MAEDA, Ryosuke TANIGUCHI, Seiichiro TACHIBANA
  • Publication number: 20130045444
    Abstract: There is disclosed a positive resist composition comprising (A) a resin having repeating units shown by the following general formulae (1) and (2) as repeating units that contain acid labile groups and being capable of increasing its alkaline solubility by an acid, (B) a photoacid generator, (C) a compound shown by the following general formula (3), and (D) a solvent. There can be a positive resist composition having high resolution, and at the same time giving an excellent pattern profile; and a patterning process in which an immersion lithography is carried out using a formed top coat.
    Type: Application
    Filed: June 18, 2012
    Publication date: February 21, 2013
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Ryosuke TANIGUCHI, Akihiro SEKI, Kenji FUNATSU, Katsuhiro KOBAYASHI
  • Publication number: 20120225386
    Abstract: A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.
    Type: Application
    Filed: February 28, 2012
    Publication date: September 6, 2012
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takeru Watanabe, Tomohiro Kobayashi, Masayoshi Sagehashi, Takeshi Nagata, Youichi Ohsawa, Ryosuke Taniguchi
  • Publication number: 20120196228
    Abstract: There is disclosed a resist composition comprising at least: (A) a polymer containing one or more repeating units having a structure shown by the following general formula (1) and/or (2), an alkaline-solubility of the polymer being increased by an acid, (B) a photo acid generator generating, with responding to a high energy beam, a sulfonic acid shown by the following general formula (3), and (C) an onium sulfonate shown by the following general formula (4). There can be a resist composition showing not only excellent LWR and pattern profile but also extremely good performance in pattern-fall resistance, and to provide a patterning process using the same.
    Type: Application
    Filed: January 6, 2012
    Publication date: August 2, 2012
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takayuki NAGASAWA, Tomohiro KOBAYASHI, Ryosuke TANIGUCHI, Masaki OHASHI
  • Publication number: 20120164577
    Abstract: A positive resist composition includes at least: (A) a polymer containing a repeating unit (a1) and an acid labile repeating unit (a2), wherein the repeating unit (a1) generates an acid of a structure represented by general formula (1) as a result that the repeating unit (a1) is sensed to a high-energy radiation, the polymer being changed in solubility in alkali by the acid; and (B) an onium sulfonate represented by general formula (2). Also, a positive resist composition, which simultaneously establishes a lower acid diffusing characteristic and a higher dissolution contrast, and which suppresses volatilization of components originated from the resist composition such as a generated acid, a quencher, and the like, to suppress a chemical flare, thereby improving a DOF, a circularity, an LWR, and the like of a hole pattern, trench pattern, and the like; and a patterning process using the positive resist composition.
    Type: Application
    Filed: December 1, 2011
    Publication date: June 28, 2012
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Ryosuke TANIGUCHI, Tomohiro KOBAYASHI, Takayuki NAGASAWA, Masaki OHASHI
  • Publication number: 20120135350
    Abstract: A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.
    Type: Application
    Filed: November 23, 2011
    Publication date: May 31, 2012
    Inventors: Tomohiro Kobayashi, Eiji Fukuda, Takayuki Nagasawa, Ryosuke Taniguchi, Youichi Ohsawa, Masayoshi Sagehashi, Yoshio Kawai
  • Publication number: 20120135357
    Abstract: A positive resist composition comprising a polymer comprising recurring units of a specific structure adapted to generate an acid upon exposure to high-energy radiation, recurring units of a lactone ring-containing structure, and acid labile units, all the recurring units being free of hydroxyl, can form a fine size pattern having a rectangular profile and improved collapse resistance.
    Type: Application
    Filed: November 23, 2011
    Publication date: May 31, 2012
    Inventors: Tomohiro KOBAYASHI, Takayuki Nagasawa, Ryosuke Taniguchi, Youichi Ohsawa, Kenji Funatsu, Seiichiro Tachibana
  • Patent number: 7727704
    Abstract: In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
    Type: Grant
    Filed: July 5, 2007
    Date of Patent: June 1, 2010
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Ryosuke Taniguchi, Tsunehiro Nishi, Tomohiro Kobayashi
  • Patent number: 7691561
    Abstract: In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
    Type: Grant
    Filed: July 5, 2007
    Date of Patent: April 6, 2010
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Ryosuke Taniguchi, Tsunehiro Nishi, Tomohiro Kobayashi
  • Publication number: 20080153030
    Abstract: There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).
    Type: Application
    Filed: December 11, 2007
    Publication date: June 26, 2008
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Tomohiro Kobayashi, Youichi Ohsawa, Ryosuke Taniguchi
  • Publication number: 20080008960
    Abstract: In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
    Type: Application
    Filed: July 5, 2007
    Publication date: January 10, 2008
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Ryosuke TANIGUCHI, Tsunehiro NISHI, Tomohiro KOBAYASHI
  • Publication number: 20080008959
    Abstract: In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
    Type: Application
    Filed: July 5, 2007
    Publication date: January 10, 2008
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Ryosuke TANIGUCHI, Tsunehiro NISHI, Tomohiro KOBAYASHI
  • Patent number: 7167579
    Abstract: An accuracy of the sex determination which is visually inspected by human based on a reference drawing of an egg shape prepared for every parent chicken is insufficient and it takes much time to perform such a determination. Thus, the sex of the fertilized egg is determined by using parameters representing features developed on a surface shape of the above described fertilized egg which are quantified based on contour image data of the above described fertilized egg obtained by taking an image of the fertilized egg which is placed on a setting stand.
    Type: Grant
    Filed: August 30, 2002
    Date of Patent: January 23, 2007
    Assignees: Kabusiki Kaisya Horiuchi, Towa Sangyo Kabusiki Kaisya
    Inventor: Ryosuke Taniguchi
  • Patent number: 6804875
    Abstract: An elastic wave generator includes an excitation coil, a magnetostriction oscillator around which the excitation coil is wound and an oscillator support. The excitation coil is wound around the oscillator, which is made of laminated magnetostriction sheets having a positive strain characteristic, in which length varies directionally upon magnetic excitation. The oscillator support has a first support surface bearing against a first end surface of the magnetostriction oscillator, intersecting the direction along which the length of the magnetostriction oscillator changes and a second support surface shrink-fit against a second end surface of the magnetostriction oscillator, intersecting the direction along which the length of the magnetostriction oscillator changes. Thus, the changes in the length of the magnetostriction oscillator due to the magnetic excitation of the excitation coil appearing at the first and second end surfaces is directly supported by the first and second support surfaces.
    Type: Grant
    Filed: April 11, 2003
    Date of Patent: October 19, 2004
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Matsuhashi Techno Research Co., Ltd.
    Inventors: Ryosuke Taniguchi, Shinichi Hattori, Takahiro Sakamoto, Takashi Shimada, Kanji Matsuhashi