Patents by Inventor Ryosuke Taniguchi
Ryosuke Taniguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9221742Abstract: A caboxylic acid sulfonium salt having formula (1) is provided wherein R0 is hydrogen or a monovalent hydrocarbon group, R01 and R02 are hydrogen or a monovalent hydrocarbon group, at least one of R0, R01 and R02 has a cyclic structure, L is a single bond or forms an ester, sulfonate, carbonate or carbamate bond with the vicinal oxygen atom, R2, R3 and R4 are monovalent hydrocarbon groups. The sulfonium salt functions as a quencher in a resist composition, enabling to form a pattern of good profile with minimal LWR, rectangularity, and high resolution.Type: GrantFiled: September 9, 2014Date of Patent: December 29, 2015Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Masaki Ohashi, Masahiro Fukushima, Tomohiro Kobayashi, Ryosuke Taniguchi
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Publication number: 20150322027Abstract: A monomer (1) is prepared by reacting a compound (9) with a base or metal to form a metal enolate reagent, and reacting the metal enolate reagent with an acyloxyketone compound (8). A polymer derived from the monomer is used as base resin to formulate a resist composition, which is shelf stable and displays a high dissolution contrast, controlled acid diffusion and low roughness in forming positive pattern via alkaline development and in forming negative pattern via organic solvent development.Type: ApplicationFiled: April 17, 2015Publication date: November 12, 2015Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takayuki Fujiwara, Masayoshi Sagehashi, Koji Hasegawa, Ryosuke Taniguchi
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Publication number: 20150323865Abstract: A polymer for resist use is obtainable from a monomer having formula (1) wherein R1 is H, CH3 or CF3, R2 and R3 each are H or a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, k1=0 or 1, and Z forms a 5 or 6-membered alicyclic ring. A resist composition comprising the polymer is shelf stable and displays a high dissolution contrast, controlled acid diffusion and low roughness during both alkaline development and organic solvent development.Type: ApplicationFiled: April 28, 2015Publication date: November 12, 2015Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Masayoshi Sagehashi, Takayuki Fujiwara, Koji Hasegawa, Ryosuke Taniguchi
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Publication number: 20150086926Abstract: A carboxylic acid sulfonium salt having formula (1) is provided wherein R0 is hydrogen or a monovalent hydrocarbon group, R01 and R02 are hydrogen or a monovalent hydrocarbon group, at least one of R0, R01, and R02 has a cyclic structure, L is a single bond or forms an ester, sulfonate, carbonate or carbamate bond with the vicinal oxygen atom, R2, R3 and R4 are monovalent hydrocarbon groups. The sulfonium salt functions as a quencher in a resist composition, enabling to form a pattern of good profile with minimal LWR, rectangularity, and high resolution.Type: ApplicationFiled: September 9, 2014Publication date: March 26, 2015Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Masaki Ohashi, Masahiro Fukushima, Tomohiro Kobayashi, Ryosuke Taniguchi
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Patent number: 8871427Abstract: There is disclosed a positive resist composition comprising (A) a resin having repeating units shown by the following general formulae (1) and (2) as repeating units that contain acid labile groups and being capable of increasing its alkaline solubility by an acid, (B) a photoacid generator, (C) a compound shown by the following general formula (3), and (D) a solvent. There can be a positive resist composition having high resolution, and at the same time giving an excellent pattern profile; and a patterning process in which an immersion lithography is carried out using a formed top coat.Type: GrantFiled: June 18, 2012Date of Patent: October 28, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Ryosuke Taniguchi, Akihiro Seki, Kenji Funatsu, Katsuhiro Kobayashi
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Patent number: 8795942Abstract: There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).Type: GrantFiled: December 11, 2007Date of Patent: August 5, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Tomohiro Kobayashi, Youichi Ohsawa, Ryosuke Taniguchi
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Patent number: 8748076Abstract: There is disclosed a resist composition comprising at least: (A) a polymer containing one or more repeating units having a structure shown by the following general formula (1) and/or (2), an alkaline-solubility of the polymer being increased by an acid, (B) a photo acid generator generating, with responding to a high energy beam, a sulfonic acid shown by the following general formula (3), and (C) an onium sulfonate shown by the following general formula (4). There can be a resist composition showing not only excellent LWR and pattern profile but also extremely good performance in pattern-fall resistance, and to provide a patterning process using the same.Type: GrantFiled: January 6, 2012Date of Patent: June 10, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Takayuki Nagasawa, Tomohiro Kobayashi, Ryosuke Taniguchi, Masaki Ohashi
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Patent number: 8703384Abstract: A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.Type: GrantFiled: November 23, 2011Date of Patent: April 22, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Tomohiro Kobayashi, Eiji Fukuda, Takayuki Nagasawa, Ryosuke Taniguchi, Youichi Ohsawa, Masayoshi Sagehashi, Yoshio Kawai
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Patent number: 8628908Abstract: A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.Type: GrantFiled: February 28, 2012Date of Patent: January 14, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Takeru Watanabe, Tomohiro Kobayashi, Masayoshi Sagehashi, Takeshi Nagata, Youichi Ohsawa, Ryosuke Taniguchi
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Publication number: 20130236832Abstract: There is disclosed an acid generator generating a sulfonic acid represented by the following general formula (1) in response to high-energy beam or heat: As a result, there is provided a novel acid generator which is suitably used as an acid generator for a resist composition, which solves the problems of exposure margin and MEF particularly without degradation of resolution and can be effectively and widely used, a chemically amplified resist composition using the same, and a patterning process.Type: ApplicationFiled: February 19, 2013Publication date: September 12, 2013Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Masaki OHASHI, Takayuki NAGASAWA, Ryosuke TANIGUCHI
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Publication number: 20130101936Abstract: A positive resist composition comprising (A) a polymer comprising recurring units containing an acid labile group, recurring units having a lactone ring, and recurring units having an oxirane ring, the polymer being adapted to increase alkaline dissolution under the action of an acid, (B) a photoacid generator, and (C) a solvent forms a fine pattern with improved LWR, improved MEF, rectangular profile, and collapse resistance.Type: ApplicationFiled: September 14, 2012Publication date: April 25, 2013Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Ryosuke Taniguchi, Tomohiro Kobayashi, Jun Hatakeyama, Kenji Funatsu, Masahiro Kanayama
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Publication number: 20130065179Abstract: There is disclosed a positive resist composition comprising (A) a specific resin (B) a photo acid generator, (C) a basic compound, and (D) a solvent. There can be a positive resist composition having, in a photolithography using a high energy beam such as an ArF excimer laser beam as a light source, an excellent resolution, especially excellent depth of focus (DOF) characteristics with an excellent pattern profile, and in addition, in formation of a contact hole pattern, giving a pattern having excellent circularity and high rectangularity; and a patterning process using this positive resist composition.Type: ApplicationFiled: September 5, 2012Publication date: March 14, 2013Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Kazunori MAEDA, Ryosuke TANIGUCHI, Seiichiro TACHIBANA
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Publication number: 20130045444Abstract: There is disclosed a positive resist composition comprising (A) a resin having repeating units shown by the following general formulae (1) and (2) as repeating units that contain acid labile groups and being capable of increasing its alkaline solubility by an acid, (B) a photoacid generator, (C) a compound shown by the following general formula (3), and (D) a solvent. There can be a positive resist composition having high resolution, and at the same time giving an excellent pattern profile; and a patterning process in which an immersion lithography is carried out using a formed top coat.Type: ApplicationFiled: June 18, 2012Publication date: February 21, 2013Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Ryosuke TANIGUCHI, Akihiro SEKI, Kenji FUNATSU, Katsuhiro KOBAYASHI
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Publication number: 20120225386Abstract: A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.Type: ApplicationFiled: February 28, 2012Publication date: September 6, 2012Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takeru Watanabe, Tomohiro Kobayashi, Masayoshi Sagehashi, Takeshi Nagata, Youichi Ohsawa, Ryosuke Taniguchi
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Publication number: 20120196228Abstract: There is disclosed a resist composition comprising at least: (A) a polymer containing one or more repeating units having a structure shown by the following general formula (1) and/or (2), an alkaline-solubility of the polymer being increased by an acid, (B) a photo acid generator generating, with responding to a high energy beam, a sulfonic acid shown by the following general formula (3), and (C) an onium sulfonate shown by the following general formula (4). There can be a resist composition showing not only excellent LWR and pattern profile but also extremely good performance in pattern-fall resistance, and to provide a patterning process using the same.Type: ApplicationFiled: January 6, 2012Publication date: August 2, 2012Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takayuki NAGASAWA, Tomohiro KOBAYASHI, Ryosuke TANIGUCHI, Masaki OHASHI
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Publication number: 20120164577Abstract: A positive resist composition includes at least: (A) a polymer containing a repeating unit (a1) and an acid labile repeating unit (a2), wherein the repeating unit (a1) generates an acid of a structure represented by general formula (1) as a result that the repeating unit (a1) is sensed to a high-energy radiation, the polymer being changed in solubility in alkali by the acid; and (B) an onium sulfonate represented by general formula (2). Also, a positive resist composition, which simultaneously establishes a lower acid diffusing characteristic and a higher dissolution contrast, and which suppresses volatilization of components originated from the resist composition such as a generated acid, a quencher, and the like, to suppress a chemical flare, thereby improving a DOF, a circularity, an LWR, and the like of a hole pattern, trench pattern, and the like; and a patterning process using the positive resist composition.Type: ApplicationFiled: December 1, 2011Publication date: June 28, 2012Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Ryosuke TANIGUCHI, Tomohiro KOBAYASHI, Takayuki NAGASAWA, Masaki OHASHI
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Publication number: 20120135350Abstract: A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.Type: ApplicationFiled: November 23, 2011Publication date: May 31, 2012Inventors: Tomohiro Kobayashi, Eiji Fukuda, Takayuki Nagasawa, Ryosuke Taniguchi, Youichi Ohsawa, Masayoshi Sagehashi, Yoshio Kawai
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Publication number: 20120135357Abstract: A positive resist composition comprising a polymer comprising recurring units of a specific structure adapted to generate an acid upon exposure to high-energy radiation, recurring units of a lactone ring-containing structure, and acid labile units, all the recurring units being free of hydroxyl, can form a fine size pattern having a rectangular profile and improved collapse resistance.Type: ApplicationFiled: November 23, 2011Publication date: May 31, 2012Inventors: Tomohiro KOBAYASHI, Takayuki Nagasawa, Ryosuke Taniguchi, Youichi Ohsawa, Kenji Funatsu, Seiichiro Tachibana
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Patent number: 7727704Abstract: In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.Type: GrantFiled: July 5, 2007Date of Patent: June 1, 2010Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Ryosuke Taniguchi, Tsunehiro Nishi, Tomohiro Kobayashi
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Patent number: 7691561Abstract: In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.Type: GrantFiled: July 5, 2007Date of Patent: April 6, 2010Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Ryosuke Taniguchi, Tsunehiro Nishi, Tomohiro Kobayashi