Patents by Inventor Ryota HORIIKE
Ryota HORIIKE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230170215Abstract: There is provided a technique that includes: (a) forming a silicon seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a1) supplying a first gas containing halogen and silicon to the substrate; and (a2) supplying a second gas containing hydrogen to the substrate; and (b) forming a film containing silicon on the silicon seed layer by supplying a third gas containing silicon to the substrate, wherein a pressure of a space in which the substrate is located in (a2) is set higher than a pressure of the space in which the substrate is located in (a1).Type: ApplicationFiled: January 13, 2023Publication date: June 1, 2023Applicant: KOKUSAI ELECTRIC CORPOTATIONInventors: Hideki HORITA, Ryota HORIIKE
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Patent number: 11587788Abstract: There is provided a technique that includes: (a) forming a silicon seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a1) supplying a first gas containing halogen and silicon to the substrate; and (a2) supplying a second gas containing hydrogen to the substrate; and (b) forming a film containing silicon on the silicon seed layer by supplying a third gas containing silicon to the substrate, wherein a pressure of a space in which the substrate is located in (a2) is set higher than a pressure of the space in which the substrate is located in (a1).Type: GrantFiled: September 23, 2020Date of Patent: February 21, 2023Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Hideki Horita, Ryota Horiike
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Publication number: 20210332477Abstract: There is included (a) modifying a film formed on a substrate in a process chamber set at a first pressure by supplying a gas containing hydrogen and oxygen to the film; (b) purging an interior of the process chamber by supplying an inert gas into the process chamber and exhausting the interior of the process chamber, at a second pressure at which the gas containing hydrogen and oxygen remaining in the process chamber after performing (a) is maintained in a gaseous state; and (c) vacuuming the interior of the process chamber so as to reduce a pressure of the interior of the process chamber after performing (b) to a third pressure lower than the second pressure.Type: ApplicationFiled: July 9, 2021Publication date: October 28, 2021Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Shin SONE, Ryota HORIIKE, Hiroki HATTA
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Publication number: 20210125828Abstract: There is provided a technique that includes: (a) forming a silicon seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a1) supplying a first gas containing halogen and silicon to the substrate; and (a2) supplying a second gas containing hydrogen to the substrate; and (b) forming a film containing silicon on the silicon seed layer by supplying a third gas containing silicon to the substrate, wherein a pressure of a space in which the substrate is located in (a2) is set higher than a pressure of the space in which the substrate is located in (a1).Type: ApplicationFiled: September 23, 2020Publication date: April 29, 2021Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Hideki HORITA, Ryota HORIIKE
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Patent number: 10497561Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.Type: GrantFiled: February 7, 2019Date of Patent: December 3, 2019Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Yoshinobu Nakamura, Kiyohiko Maeda, Yoshiro Hirose, Ryota Horiike, Yoshitomo Hashimoto
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Publication number: 20190189422Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.Type: ApplicationFiled: February 7, 2019Publication date: June 20, 2019Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Yoshinobu NAKAMURA, Kiyohiko MAEDA, Yoshiro HIROSE, Ryota HORIIKE, Yoshitomo HASHIMOTO
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Patent number: 10229829Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.Type: GrantFiled: April 11, 2018Date of Patent: March 12, 2019Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Yoshinobu Nakamura, Kiyohiko Maeda, Yoshiro Hirose, Ryota Horiike, Yoshitomo Hashimoto
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Patent number: 10199219Abstract: There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.Type: GrantFiled: June 12, 2017Date of Patent: February 5, 2019Assignee: Hitachi Kokusai Electric, Inc.Inventors: Satoshi Shimamoto, Yoshiro Hirose, Hajime Karasawa, Ryota Horiike, Naoharu Nakaiso, Yoshitomo Hashimoto
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Patent number: 10176988Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor to the substrate in a process chamber and exhausting the precursor from a first exhaust system; and supplying a reactant to the substrate in the process chamber and exhausting the reactant from a second exhaust system. In the forming of the film, when the precursor does not flow through the first exhaust system, a deactivator that is a material different from the reactant is directly supplied from a supply port provided in the first exhaust system into the first exhaust system.Type: GrantFiled: June 23, 2017Date of Patent: January 8, 2019Assignee: Kokusai Electric CorporationInventors: Ryota Horiike, Kenji Kameda
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Patent number: 10163625Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.Type: GrantFiled: December 21, 2016Date of Patent: December 25, 2018Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshinobu Nakamura, Kiyohiko Maeda, Yoshiro Hirose, Ryota Horiike, Yoshitomo Hashimoto
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Patent number: 10121654Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.Type: GrantFiled: December 21, 2016Date of Patent: November 6, 2018Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshinobu Nakamura, Kiyohiko Maeda, Yoshiro Hirose, Ryota Horiike, Yoshitomo Hashimoto
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Patent number: 10096463Abstract: A method of manufacturing a semiconductor device includes: forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor from a first nozzle to a substrate and exhausting the precursor from an exhaust port; supplying a first reactant from a second nozzle to the substrate and exhausting the first reactant from the exhaust port; and supplying a second reactant from a third nozzle to the substrate and exhausting the second reactant from the exhaust port. A substrate in-plane film thickness distribution of the film formed on the substrate is controlled by controlling a balance between a flow rate of an inert gas supplied from the second nozzle, a flow rate of an inert gas supplied from the third nozzle, and a flow rate of an inert gas supplied from the first nozzle in supplying the precursor.Type: GrantFiled: September 11, 2017Date of Patent: October 9, 2018Assignee: Hitachi Kokusai Electric, Inc.Inventors: Yoshitomo Hashimoto, Tatsuru Matsuoka, Masaya Nagato, Ryota Horiike, Shintaro Kogura
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Publication number: 20180233351Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.Type: ApplicationFiled: April 11, 2018Publication date: August 16, 2018Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshinobu NAKAMURA, Kiyohiko MAEDA, Yoshiro HIROSE, Ryota HORIIKE, Yoshitomo HASHIMOTO
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Publication number: 20180076017Abstract: A method of manufacturing a semiconductor device includes: forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor from a first nozzle to a substrate and exhausting the precursor from an exhaust port; supplying a first reactant from a second nozzle to the substrate and exhausting the first reactant from the exhaust port; and supplying a second reactant from a third nozzle to the substrate and exhausting the second reactant from the exhaust port. A substrate in-plane film thickness distribution of the film formed on the substrate is controlled by controlling a balance between a flow rate of an inert gas supplied from the second nozzle, a flow rate of an inert gas supplied from the third nozzle, and a flow rate of an inert gas supplied from the first nozzle in supplying the precursor.Type: ApplicationFiled: September 11, 2017Publication date: March 15, 2018Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshitomo HASHIMOTO, Tatsuru MATSUOKA, Masaya NAGATO, Ryota HORIIKE, Shintaro KOGURA
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Publication number: 20170372890Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor to the substrate in a process chamber and exhausting the precursor from a first exhaust system; and supplying a reactant to the substrate in the process chamber and exhausting the reactant from a second exhaust system. In the forming of the film, when the precursor does not flow through the first exhaust system, a deactivator that is a material different from the reactant is directly supplied from a supply port provided in the first exhaust system into the first exhaust system.Type: ApplicationFiled: June 23, 2017Publication date: December 28, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Ryota HORIIKE, Kenji KAMEDA
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Publication number: 20170365467Abstract: There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.Type: ApplicationFiled: June 12, 2017Publication date: December 21, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Satoshi SHIMAMOTO, Yoshiro HIROSE, Hajime KARASAWA, Ryota HORIIKE, Naoharu NAKAISO, Yoshitomo HASHIMOTO
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Publication number: 20170103885Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.Type: ApplicationFiled: December 21, 2016Publication date: April 13, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshinobu NAKAMURA, Kiyohiko MAEDA, Yoshiro HIROSE, Ryota HORIIKE, Yoshitomo HASHIMOTO