Patents by Inventor Ryota IFUKU

Ryota IFUKU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220223407
    Abstract: A method of forming a graphene structure, includes: providing a substrate; performing a preprocessing by supplying a first processing gas including a carbon-containing gas to the substrate while heating the substrate, without using plasma; and after the preprocessing, forming the graphene structure on a surface of the substrate through a plasma CVD using plasma of a second processing gas including a carbon-containing gas.
    Type: Application
    Filed: February 26, 2020
    Publication date: July 14, 2022
    Inventors: Ryota IFUKU, Takashi MATSUMOTO, Masahito SUGIURA
  • Publication number: 20220185673
    Abstract: A method for detecting abnormal growth of graphene includes: measuring, through spectroscopic ellipsometry, a reflection spectrum of a measurement object having a graphene film formed through CVD on a substrate; creating a film structure model, calculating polarization parameters, and matching calculated values of the polarization parameters to measured values through fitting; and detecting abnormal growth of the graphene based on a value of goodness of fit obtained when fitting the polarization parameters.
    Type: Application
    Filed: March 5, 2020
    Publication date: June 16, 2022
    Inventors: Ryota IFUKU, Takashi MATSUMOTO, Akira FUJIO, Shin KONO
  • Publication number: 20220178031
    Abstract: A film formation method includes: adsorbing a precursor of a film-forming raw material gas onto a surface of a substrate on which a film is to be formed by irradiating an interior of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bond of the raw material gas while supplying the raw material gas into the processing container in which the substrate is disposed; and forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.
    Type: Application
    Filed: April 6, 2020
    Publication date: June 9, 2022
    Inventors: Michitaka AITA, Ken ITABASHI, Ryota IFUKU, Takaaki KATO, Kazuki YAMADA
  • Publication number: 20220165568
    Abstract: A method for forming a hexagonal boron nitride film comprises: providing a substrate; and generating plasma of a boron-containing gas and a nitrogen-containing gas in a plasma generation region located at a position apart from the substrate to form the hexagonal boron nitride film on the surface of the substrate by plasma CVD using plasma diffused from the plasma generation region.
    Type: Application
    Filed: February 19, 2020
    Publication date: May 26, 2022
    Inventors: Nobutake KABUKI, Masahito SUGIURA, Takashi MATSUMOTO, Kenjiro KOIZUMI, Ryota IFUKU
  • Publication number: 20220155242
    Abstract: A method of detecting an abnormal growth of graphene includes: preparing an inspection target having a graphene film formed on a substrate by CVD; receiving light from the graphene film by using a dark field optical system; and inspecting the received light, thereby detecting the abnormal growth of the graphene.
    Type: Application
    Filed: February 26, 2020
    Publication date: May 19, 2022
    Inventors: Ryota IFUKU, Takashi MATSUMOTO, Akira FUJIO, Kousaku SAITO
  • Patent number: 11302576
    Abstract: There is provided a semiconductor device including a first conductive layer formed on a substrate; a second conductive layer serving as a wiring layer and a barrier layer provided between the first conductive layer and the second conductive layer, wherein the barrier layer is made of a graphene film, and the second conductive layer includes a metal silicide compound, the metal silicide compound being provided so as to be in contact with the graphene film constituting the barrier layer.
    Type: Grant
    Filed: March 18, 2020
    Date of Patent: April 12, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Makoto Wada, Takashi Matsumoto, Masahito Sugiura, Ryota Ifuku
  • Patent number: 11091836
    Abstract: A graphene structure forming method for forming a graphene structure is provided. The method comprises preparing a target substrate, and forming the graphene structure on a surface of the target substrate by remote microwave plasma CVD using a carbon-containing gas as a film-forming raw material gas in a state in which the surface of the target substrate has no catalytic function.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: August 17, 2021
    Assignee: TOKYO ELECTRONICS LIMITED
    Inventors: Ryota Ifuku, Takashi Matsumoto
  • Publication number: 20210164103
    Abstract: There is provided a film forming method of forming a carbon-containing film by a microwave plasma from a microwave source, the film forming method including: a dummy step of performing a dummy process by generating plasma of a first carbon-containing gas within a processing container; a placement step of placing a substrate on a stage within the processing container; and a film forming step of forming the carbon-containing film on the substrate using plasma of a second carbon-containing gas.
    Type: Application
    Filed: November 30, 2020
    Publication date: June 3, 2021
    Inventors: Ryota IFUKU, Takashi MATSUMOTO, Masahito SUGIURA, Makoto WADA
  • Publication number: 20210047186
    Abstract: A method of forming a graphene structure includes providing a substrate to be processed and forming a graphene structure on a surface of the substrate to be processed through a plasma CVD using plasma of a processing gas including a carbon-containing gas and an oxidizing gas in a state in which the surface of the substrate to be processed does not have a catalytic function.
    Type: Application
    Filed: March 1, 2019
    Publication date: February 18, 2021
    Inventors: Ryota IFUKU, Takashi MATSUMOTO
  • Publication number: 20200303251
    Abstract: There is provided a semiconductor device including a first conductive layer formed on a substrate; a second conductive layer serving as a wiring layer and a barrier layer provided between the first conductive layer and the second conductive layer, wherein the barrier layer is made of a graphene film, and the second conductive layer includes a metal silicide compound, the metal silicide compound being provided so as to be in contact with the graphene film constituting the barrier layer.
    Type: Application
    Filed: March 18, 2020
    Publication date: September 24, 2020
    Inventors: Makoto WADA, Takashi MATSUMOTO, Masahito SUGIURA, Ryota IFUKU
  • Patent number: 10700006
    Abstract: There is provided a method for manufacturing Ni wiring. The method includes forming an Ni film on a surface of a substrate having a recess formed thereon by CVD or ALD by using an Ni compound as a film forming material and NH3 gas and H2 gas as reduction gases to partially fill the recess. The method further includes annealing the substrate to make the Ni film on the surface of the substrate and on a side surface of the recess reflow into the recess.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: June 30, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hiroaki Kawasaki, Takashi Matsumoto, Hiroyuki Nagai, Ryota Ifuku
  • Publication number: 20190085457
    Abstract: A graphene structure forming method for forming a graphene structure is provided. The method comprises preparing a target substrate, and forming the graphene structure on a surface of the target substrate by remote microwave plasma CVD using a carbon-containing gas as a film-forming raw material gas in a state in which the surface of the target substrate has no catalytic function.
    Type: Application
    Filed: September 14, 2018
    Publication date: March 21, 2019
    Inventors: Ryota IFUKU, Takashi MATSUMOTO
  • Publication number: 20180226261
    Abstract: A method for anisotropically etching graphene includes generating hydrogen plasma by microwave plasma, and anisotropically etching graphene by the generated hydrogen plasma.
    Type: Application
    Filed: February 5, 2018
    Publication date: August 9, 2018
    Inventors: Ryota IFUKU, Takashi MATSUMOTO
  • Publication number: 20180226252
    Abstract: There is provided a method for planarizing irregularities in a surface of a grapheme layer formed on a substrate, including: planarizing the grapheme layer by removing graphene constituting a convex portion in the surface of the grapheme layer by anisotropically etching the grapheme layer using a plasma etching in an in-plane direction from an edge portion of the graphene.
    Type: Application
    Filed: February 5, 2018
    Publication date: August 9, 2018
    Inventors: Ryota IFUKU, Hisashi HIGUCHI, Takashi MATSUMOTO
  • Publication number: 20180090446
    Abstract: There is provided a method for manufacturing Ni wiring. The method includes forming an Ni film on a surface of a substrate having a recess formed thereon by CVD or ALD by using an Ni compound as a film forming material and NH3gas and H2 gas as reduction gases to partially fill the recess. The method further includes annealing the substrate to make the Ni film on the surface of the substrate and on a side surface of the recess reflow into the recess.
    Type: Application
    Filed: September 25, 2017
    Publication date: March 29, 2018
    Inventors: Hiroaki KAWASAKI, Takashi MATSUMOTO, Hiroyuki NAGAI, Ryota IFUKU
  • Publication number: 20180076030
    Abstract: There is provided a SiC film forming method for forming a SiC film on a workpiece, including: a first step of forming a carbon film on the workpiece; and a second step of exposing the carbon film to a silicon-containing gas and causing silicon to be combined into the carbon film.
    Type: Application
    Filed: September 6, 2017
    Publication date: March 15, 2018
    Inventors: Kazuki YAMADA, Masatoshi YAMATO, Ryota IFUKU, Shuji AZUMO, Takashi FUSE
  • Publication number: 20180057933
    Abstract: There is provided a method for producing graphene which includes a first growth step of supplying a carbon-containing gas into a chamber in which a metal catalyst is disposed to grow graphene on a surface of the metal catalyst, an activation step of supplying a process gas containing an oxygen gas or a hydrogen gas into the chamber in which the metal catalyst having the graphene grown on the surface thereof is disposed to reactivate the metal catalyst, and a second growth step of supplying the carbon-containing gas into the chamber in which the reactivated metal catalyst is disposed to regrow the graphene on the surface of the metal catalyst.
    Type: Application
    Filed: August 29, 2017
    Publication date: March 1, 2018
    Inventors: Ryota IFUKU, Takashi MATSUMOTO
  • Publication number: 20170268103
    Abstract: A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.
    Type: Application
    Filed: June 5, 2017
    Publication date: September 21, 2017
    Inventors: Daisuke NISHIDE, Takashi MATSUMOTO, Munehito KAGAYA, Ryota IFUKU
  • Patent number: 9702039
    Abstract: A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.
    Type: Grant
    Filed: August 5, 2015
    Date of Patent: July 11, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Daisuke Nishide, Takashi Matsumoto, Munehito Kagaya, Ryota Ifuku
  • Publication number: 20170016116
    Abstract: There is provided a graphene production method including: forming a catalyst metal film on a surface of a substrate; heating the catalyst metal film; and cooling the heated catalyst metal film, wherein the forming a catalyst metal film includes introducing carbons into the catalyst metal film.
    Type: Application
    Filed: July 6, 2016
    Publication date: January 19, 2017
    Inventors: Daisuke NISHIDE, Takashi MATSUMOTO, Ryota IFUKU