Patents by Inventor Ryota Sasajima

Ryota Sasajima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10287680
    Abstract: There is provided a technique that includes: forming a film on a substrate in a process chamber by performing: supplying a precursor gas to the substrate through a first nozzle; and supplying at least one selected from a group consisting of an oxygen-containing gas and a nitrogen-and-hydrogen-containing gas to the substrate through a second nozzle that is configured such that gas stagnation on a surface of the second nozzle caused by the second nozzle is less than gas stagnation on a surface of the first nozzle caused by the first nozzle, or such that contact of the second nozzle with gas staying on the surface of the second nozzle is less than contact of the first nozzle with gas staying on the surface of the first nozzle.
    Type: Grant
    Filed: March 19, 2018
    Date of Patent: May 14, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Shintaro Kogura, Ryota Sasajima, Kosuke Takagi
  • Publication number: 20180363137
    Abstract: Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.
    Type: Application
    Filed: August 22, 2018
    Publication date: December 20, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kosuke TAKAGI, Ryota SASAJIMA, Shintaro KOGURA, Naonori AKAE, Risa YAMAKOSHI, Toshiki FUJINO, Masato TERASAKI, Masanori MINAMI
  • Publication number: 20180305817
    Abstract: There is provided a technique that includes: forming a film on a substrate in a process chamber by performing: supplying a precursor gas to the substrate through a first nozzle; and supplying at least one selected from a group consisting of an oxygen-containing gas and a nitrogen-and-hydrogen-containing gas to the substrate through a second nozzle that is configured such that gas stagnation on a surface of the second nozzle caused by the second nozzle is less than gas stagnation on a surface of the first nozzle caused by the first nozzle, or such that contact of the second nozzle with gas staying on the surface of the second nozzle is less than contact of the first nozzle with gas staying on the surface of the first nozzle.
    Type: Application
    Filed: March 19, 2018
    Publication date: October 25, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Shintaro KOGURA, Ryota SASAJIMA, Kosuke TAKAGI
  • Patent number: 10081868
    Abstract: Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: September 25, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kosuke Takagi, Ryota Sasajima, Shintaro Kogura, Naonori Akae, Risa Yamakoshi, Toshiki Fujino, Masato Terasaki, Masayoshi Minami
  • Patent number: 10066294
    Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor gas to the substrate in a process chamber through a first nozzle; supplying an oxygen-containing gas to the substrate in the process chamber through a second nozzle made of quartz and differing from the first nozzle; and supplying a hydrogen-containing gas to the substrate in the process chamber through the second nozzle. The method further includes, prior to performing the act of forming the film, etching a surface of the second nozzle to a depth which falls within a range of 15 ?m or more and 30 ?m or less from the surface of the second nozzle.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: September 4, 2018
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Ryota Sasajima, Shintaro Kogura, Masayoshi Minami
  • Patent number: 10036092
    Abstract: A Technique includes forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a precursor gas to the substrate, exhausting the precursor gas from the process chamber, supplying an oxygen-containing gas to the substrate, exhausting the oxygen-containing gas from the process chamber, supplying a hydrogen-containing gas to the substrate, and exhausting the hydrogen-containing gas from the process chamber. At least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the oxygen-containing gas is set greater than that in the act of exhausting the precursor gas, and at least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the hydrogen-containing gas is set greater than that in the act of exhausting the precursor gas.
    Type: Grant
    Filed: September 21, 2015
    Date of Patent: July 31, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Shintaro Kogura, Ryota Sasajima
  • Patent number: 9966251
    Abstract: Provided is a method of manufacturing a semiconductor device.
    Type: Grant
    Filed: April 7, 2015
    Date of Patent: May 8, 2018
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Ryota Sasajima, Yoshiro Hirose, Yosuke Ota, Naonori Akae, Kojiro Yokozawa
  • Patent number: 9966252
    Abstract: Provided is a method of manufacturing a semiconductor device.
    Type: Grant
    Filed: April 7, 2015
    Date of Patent: May 8, 2018
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Ryota Sasajima, Yoshiro Hirose, Yosuke Ota, Naonori Akae, Kojiro Yokozawa
  • Patent number: 9881789
    Abstract: A method of manufacturing a semiconductor device includes: providing a substrate having an oxide film; performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate, supplying a carbon-containing gas to the substrate, and supplying a nitrogen-containing gas to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate and supplying a gas containing carbon and nitrogen to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas containing carbon to the substrate and supplying a nitrogen-containing gas to the substrate, the oxide film being used as an oxygen source to form a nitride layer containing oxygen and carbon as a seed layer; and forming a nitride film containing no oxygen and carbon as a first film on the seed layer.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: January 30, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC, INC.
    Inventors: Yoshitomo Hashimoto, Yoshiro Hirose, Shingo Nohara, Ryota Sasajima, Katsuyoshi Harada, Yuji Urano
  • Patent number: 9837262
    Abstract: A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times after supplying a nitriding gas to the substrate. The cycle includes performing the following steps in the following order: supplying a carbon-containing gas to the substrate; supplying a predetermined element-containing gas to the substrate; supplying the carbon-containing gas to the substrate; supplying an oxidizing gas to the substrate; and supplying the nitriding gas to the substrate.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: December 5, 2017
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Ryota Sasajima, Yoshinobu Nakamura
  • Patent number: 9691606
    Abstract: There is provided a method of manufacturing a semiconductor device, including pre-treating a surface of an insulating film formed on a substrate by supplying a precursor containing a first element and a halogen element to the substrate; and forming a film containing the first element and a second element on the pre-treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle including supplying the precursor to the substrate; and supplying a reactant containing the second element to the substrate, wherein the act of supplying the precursor and the act of supplying the reactant are performed non-simultaneously.
    Type: Grant
    Filed: July 8, 2015
    Date of Patent: June 27, 2017
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Yoshitomo Hashimoto, Yoshiro Hirose, Katsuyoshi Harada, Yoshinobu Nakamura, Ryota Sasajima
  • Publication number: 20170178902
    Abstract: A method of manufacturing a semiconductor device includes: providing a substrate having an oxide film; performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate, supplying a carbon-containing gas to the substrate, and supplying a nitrogen-containing gas to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate and supplying a gas containing carbon and nitrogen to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas containing carbon to the substrate and supplying a nitrogen-containing gas to the substrate, the oxide film being used as an oxygen source to form a nitride layer containing oxygen and carbon as a seed layer; and forming a nitride film containing no oxygen and carbon as a first film on the seed layer.
    Type: Application
    Filed: March 8, 2017
    Publication date: June 22, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshitomo HASHIMOTO, Yoshiro HIROSE, Shingo NOHARA, Ryota SASAJIMA, Katsuyoshi HARADA, Yuji URANO
  • Patent number: 9620357
    Abstract: A method of manufacturing a semiconductor device includes: providing a substrate having an oxide film; performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate, supplying a carbon-containing gas to the substrate, and supplying a nitrogen-containing gas to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate and supplying a gas containing carbon and nitrogen to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas containing carbon to the substrate and supplying a nitrogen-containing gas to the substrate, the oxide film being used as an oxygen source to form a nitride layer containing oxygen and carbon as a seed layer; and forming a nitride film containing no oxygen and carbon as a first film on the seed layer.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: April 11, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshitomo Hashimoto, Yoshiro Hirose, Shingo Nohara, Ryota Sasajima, Katsuyoshi Harada, Yuji Urano
  • Publication number: 20170051408
    Abstract: Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.
    Type: Application
    Filed: July 15, 2016
    Publication date: February 23, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kosuke TAKAGI, Ryota SASAJIMA, Shintaro KOGURA, Naonori AKAE, Risa YAMAKOSHI, Toshiki FUJINO, Masato TERASAKI, Masayoshi MINAMI
  • Publication number: 20170025271
    Abstract: A method of manufacturing a semiconductor device includes: providing a substrate having an oxide film; performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate, supplying a carbon-containing gas to the substrate, and supplying a nitrogen-containing gas to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate and supplying a gas containing carbon and nitrogen to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas containing carbon to the substrate and supplying a nitrogen-containing gas to the substrate, the oxide film being used as an oxygen source to form a nitride layer containing oxygen and carbon as a seed layer; and forming a nitride film containing no oxygen and carbon as a first film on the seed layer.
    Type: Application
    Filed: July 22, 2016
    Publication date: January 26, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshitomo HASHIMOTO, Yoshiro HIROSE, Shingo NOHARA, Ryota SASAJIMA, Katsuyoshi HARADA, Yuji URANO
  • Publication number: 20160314959
    Abstract: A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times after supplying a nitriding gas to the substrate. The cycle includes performing the following steps in the following order: supplying a carbon-containing gas to the substrate; supplying a predetermined element-containing gas to the substrate; supplying the carbon-containing gas to the substrate; supplying an oxidizing gas to the substrate; and supplying the nitriding gas to the substrate.
    Type: Application
    Filed: July 5, 2016
    Publication date: October 27, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Ryota SASAJIMA, Yoshinobu NAKAMURA
  • Patent number: 9455137
    Abstract: An insulating film including characteristics such as low permittivity, a low etching rate and a high insulation property is formed. Supplying a gas containing an element, a carbon-containing gas and a nitrogen-containing gas to a heated substrate in a processing vessel to form a carbonitride layer including the element, and supplying the gas containing the element and an oxygen-containing gas to the heated substrate in the processing vessel to form an oxide layer including the element are alternately repeated to form on the substrate an oxycarbonitride film having the carbonitride layer and the oxide layer alternately stacked therein.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: September 27, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshiro Hirose, Yushin Takasawa, Tsukasa Kamakura, Yoshinobu Nakamura, Ryota Sasajima
  • Patent number: 9431236
    Abstract: A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas. The act of supplying the nitriding gas is performed before the act of supplying the specific element-containing gas, and the act of supplying the carbon-containing gas and the act of supplying the oxidizing gas are not performed until the act of supplying the specific element-containing gas is performed.
    Type: Grant
    Filed: January 12, 2015
    Date of Patent: August 30, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Ryota Sasajima, Yoshinobu Nakamura
  • Publication number: 20160244875
    Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor gas to the substrate in a process chamber through a first nozzle; supplying an oxygen-containing gas to the substrate in the process chamber through a second nozzle made of quartz and differing from the first nozzle; and supplying a hydrogen-containing gas to the substrate in the process chamber through the second nozzle. The method further includes, prior to performing the act of forming the film, etching a surface of the second nozzle to a depth which falls within a range of 15 ?m or more and 30 ?m or less from the surface of the second nozzle.
    Type: Application
    Filed: February 25, 2016
    Publication date: August 25, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Ryota SASAJIMA, Shintaro KOGURA, Masayoshi MINAMI
  • Patent number: D783351
    Type: Grant
    Filed: November 9, 2015
    Date of Patent: April 11, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Toshiki Fujino, Kosuke Takagi, Ryota Sasajima