Patents by Inventor Ryota Sasajima

Ryota Sasajima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120045905
    Abstract: Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying at least two types of source gases into the process vessel, each of the at least two types of source gases containing the element, and (b) changing the layer containing the element by supplying reaction gas into the process vessel, the reaction gas being different from the at least two types of source gases; and unloading the processed substrate from the process vessel.
    Type: Application
    Filed: November 1, 2011
    Publication date: February 23, 2012
    Inventors: Naonori AKAE, Yoshiro Hirose, Yushin Takasawa, Yosuke Ota, Ryota Sasajima
  • Patent number: 8076251
    Abstract: Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an oxide, nitride, or oxynitride film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying and exhausting first and second source gases containing the element into and from the process vessel; and (b) changing the layer containing the element into an oxide, nitride, or oxynitride layer by supplying and exhausting reaction gas different from the first and second source gases into and from the process vessel; and unloading the substrate from the process vessel. The first source gas is more reactive than the second source gas, and an amount of the first source gas supplied into the process vessel is set to be less than that of the second source gas supplied into the process vessel.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: December 13, 2011
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Naonori Akae, Yoshiro Hirose, Yushin Takasawa, Yosuke Ota, Ryota Sasajima
  • Publication number: 20110256733
    Abstract: An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed.
    Type: Application
    Filed: April 8, 2011
    Publication date: October 20, 2011
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshiro HIROSE, Yushin TAKASAWA, Tsukasa KAMAKURA, Yoshinobu NAKAMURA, Ryota SASAJIMA
  • Publication number: 20110130011
    Abstract: Provided is a method of manufacturing a semiconductor device.
    Type: Application
    Filed: November 18, 2010
    Publication date: June 2, 2011
    Applicant: HITACHI-KOKUSAI ELECTRIC INC.
    Inventors: Ryota SASAJIMA, Yoshiro HIROSE, Yosuke OTA, Naonori AKAE, Kojiro YOKOZAWA
  • Publication number: 20110076857
    Abstract: Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an oxide, nitride, or oxynitride film on the substrate by alternately repeating: (a) forming a layer containing a predetermined element on the substrate by supplying and exhausting first and second source gases containing the element into and from the process vessel; and (b) changing the layer containing the element into an oxide, nitride, or oxynitride layer by supplying and exhausting reaction gas different from the first and second source gases into and from the process vessel; and unloading the substrate from the process vessel. The first source gas is more reactive than the second source gas, and an amount of the first source gas supplied into the process vessel is set to be less than that of the second source gas supplied into the process vessel.
    Type: Application
    Filed: September 29, 2010
    Publication date: March 31, 2011
    Applicant: HITACHI-KOKUSAI ELECTRIC INC.
    Inventors: Naonori AKAE, Yoshiro HIROSE, Yushin TAKASAWA, Yosuke OTA, Ryota SASAJIMA
  • Patent number: 7901206
    Abstract: A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.
    Type: Grant
    Filed: March 27, 2006
    Date of Patent: March 8, 2011
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Akira Morohashi, Iwao Nakamura, Ryota Sasajima, Keishin Yamazaki, Sadao Nakashima
  • Patent number: 7891975
    Abstract: Heat treatment apparatus and a method of manufacturing a substrate are provided, in which drop of particles produced by a rubbing action between a support strip and a support member can be prevented. Heat treatment apparatus 10 has a reactor 40 for treating a substrate, and a support tool 30 for supporting the substrate 54 in the reactor 40. The support tool 30 has a support part 57 to be contacted to the substrate 54, and a support strip 67 for supporting the support part 57. A back of the support part 57 has a convex portion or a concave portion, and the back of the support part 54 is configured to be not contacted to an edge of the support strip 67, and contacted to a top of the support strip 67 at inner than the edge of the support strip 67.
    Type: Grant
    Filed: August 1, 2005
    Date of Patent: February 22, 2011
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Ryota Sasajima, Iwao Nakamura, Akira Morohashi, Ryuji Yamamoto
  • Patent number: 7820118
    Abstract: To provide a substrate treatment apparatus capable of performing temperature control in a reaction tube with accuracy. A substrate treatment apparatus 100 includes: a reaction tube 42 for treating a substrate 54; a heater 46 for heating the substrate 54 in the reaction tube 42; a cooling air channel 72 for circulating cooling air 70 outside the reaction tube 42; and a thermocouple 82 for detecting temperature around the reaction tube 42. The thermocouple 82 is disposed in the cooling air channel 72 for circulating cooling air 70 in a state where the thermocouple 82 is covered with a protection tube 86, and a cover 88 for intercepting flow toward the protection tube 86 of the cooling air 70 is disposed outside the protection tube 86.
    Type: Grant
    Filed: August 4, 2006
    Date of Patent: October 26, 2010
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Keishin Yamazaki, Iwao Nakamura, Ryota Sasajima
  • Publication number: 20100029092
    Abstract: A method is provided with a step of supplying a reacting furnace (200) with a plurality of gases which react each other and an inert gas and oxidizing a substrate (20) under an atmospheric pressure, and a step of carrying out the substrate (20) after oxidizing from the reacting furnace. In the oxidizing step, the partial pressure of the oxidizing gas is kept constant by changing a flow quantity of the inert gas in accordance with atmospheric pressure variation, and a flow quantity of the inert gas is calculated based on a previously calculated flow quantity of a gas generated by the reaction of the gases and a gas remained without being consumed by the reaction.
    Type: Application
    Filed: March 30, 2006
    Publication date: February 4, 2010
    Applicant: HITACHI KIKUSAI ELECTRIC INC.
    Inventors: Naoto Nakamura, Iwao Nakamura, Ryota Sasajima
  • Patent number: 7625205
    Abstract: A heat treatment device and a method of manufacturing substrates capable of reducing the slippage of the substrates when the substrates are supported on support parts comprising plate-like members. The device comprises a support device having the support parts in contact with the substrates and a body part supporting the support parts. Each of the support parts comprises the plate-like members supporting the substrate so as not to come into contact with the peripheral edge portion of the substrate, and a non-contact part communication with the outside without coming into contact with the substrate is formed in the substrate placing surface of the support part. The overall opening area of the portion of the non-contact part communicating with the outside is 25 to 94% of the overall area of the substrate placing surface.
    Type: Grant
    Filed: September 29, 2005
    Date of Patent: December 1, 2009
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Ryota Sasajima, Iwao Nakamura
  • Publication number: 20090111285
    Abstract: [Problem] To provide a substrate treatment apparatus capable of performing temperature control in a reaction tube with accuracy. [Means for Resolution] A substrate treatment apparatus 100 includes: a reaction tube 42 for treating a substrate 54; a heater 46 for heating the substrate 54 in the reaction tube 42; a cooling air channel 72 for circulating cooling air 70 outside the reaction tube 42; and a thermocouple 82 for detecting temperature around the reaction tube 42. The thermocouple 82 is disposed in the cooling air channel 72 for circulating cooling air 70 in a state where the thermocouple 82 is covered with a protection tube 86, and a cover 88 for intercepting flow toward the protection tube 86 of the cooling air 70 is disposed outside the protection tube 86.
    Type: Application
    Filed: August 4, 2006
    Publication date: April 30, 2009
    Applicant: Hitachi Kokusai Electric Inc.
    Inventors: Keishin Yamazaki, Iwao Nakamura, Ryota Sasajima
  • Publication number: 20090016854
    Abstract: A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.
    Type: Application
    Filed: March 27, 2006
    Publication date: January 15, 2009
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Akira Morohashi, Iwao Nakamura, Ryota Sasajima, Keishin Yamazaki, Sadao Nakashima
  • Publication number: 20070297876
    Abstract: Heat treatment apparatus and a method of manufacturing a substrate are provided, in which drop of particles produced by a rubbing action between a support strip and a support member can be prevented. Heat treatment apparatus 10 has a reactor 40 for treating a substrate, and a support tool 30 for supporting the substrate 54 in the reactor 40. The support tool 30 has a support part 57 to be contacted to the substrate 54, and a support strip 67 for supporting the support part 57. A back of the support part 57 has a convex portion or a concave portion, and the back of the support part 54 is configured to be not contacted to an edge of the support strip 67, and contacted to a top of the support strip 67 at inner than the edge of the support strip 67.
    Type: Application
    Filed: August 1, 2005
    Publication date: December 27, 2007
    Inventors: Ryota Sasajima, Iwao Nakamura, Akira Morohashi, Ryuji Yamamoto
  • Publication number: 20070292814
    Abstract: A heat treatment device and a method of manufacturing substrates capable of reducing the slippage of the substrates when the substrates are supported on support parts comprising plate-like members. The device comprises a support device having the support parts in contact with the substrates and a body part supporting the support parts. Each of the support parts comprises the plate-like members supporting the substrate so as not to come into contact with the peripheral edge portion of the substrate, and a non-contact part communication with the outside without coming into contact with the substrate is formed in the substrate placing surface of the support part. The overall opening area of the portion of the non-contact part communicating with the outside is 25 to 94% of the overall area of the substrate placing surface.
    Type: Application
    Filed: September 29, 2005
    Publication date: December 20, 2007
    Inventors: Ryota Sasajima, Iwao Nakamura
  • Publication number: 20040018650
    Abstract: Pollution caused by chemical pollutants can be estimated automatically. A chemical pollutants detecting unit 60 installed in a duct 33 includes a supporting shaft 61, which is inserted into a sidewall 11a of a housing, for supporting the chemical pollutants detecting unit 60, a quartz crystal microbalance 62 for detecting organic matters in a clean air 53 passing through the duct 33, an oscillating circuit 63 for oscillating the quartz crystal microbalance 62, an oscillation frequency detecting block 64, a chemical pollutants calculating block 65, a controller 66, an output unit 67, a heater 68 for heating the quartz crystal microbalance 62, and a thermo-hygrometer 70. A chemical filter is examined automatically whether an ability of removing the chemical pollutants thereby is degraded or not. If the ability is found to have been degraded, efficiency in an IC manufacturing method can be prevented from being degraded by issuing an alarming signal beforehand.
    Type: Application
    Filed: June 10, 2003
    Publication date: January 29, 2004
    Applicant: Hitachi Kokusai Electric Inc.
    Inventors: Ryota Sasajima, Hironobu Miya, Naoto Nakamura