Abstract: There is a problem that an oxide film or high resistance abrasion powder is formed at the contact interface due to micro sliding abrasion in a high temperature environment or temperature cycle to increase the contact resistance at the contact portion of a non-noble metal connection terminal. Provided is an in-vehicle electronic module, a connector, and a connection structure thereof, which have the same connection reliability as noble metals even when exposed to a harsh environment and can reduce cost of members.

Abstract: There is a problem that an oxide film or high resistance abrasion powder is formed at the contact interface due to micro sliding abrasion in a high temperature environment or temperature cycle to increase the contact resistance at the contact portion of a non-noble metal connection terminal. Provided is an in-vehicle electronic module, a connector, and a connection structure thereof, which have the same connection reliability as noble metals even when exposed to a harsh environment and can reduce cost of members.

Abstract: There is a problem that contact resistance increases due to formation of an oxide film on a contact interface or biting of abrasion powder caused by micro-sliding when a contact connecting portion of a connection terminal including non-noble metal members is exposed to high temperature environment or a repetitious temperature cycle. An object of the present invention is to provide an in-vehicle electronic module that has connection reliability equivalent to that of the conventional in-vehicle electronic module even when being placed in the environment of an engine compartment and can achieve cost reduction by reducing the number of parts and assembly steps.

Abstract: There is a problem that contact resistance increases due to formation of an oxide film on a contact interface or biting of abrasion powder caused by micro-sliding when a contact connecting portion of a connection terminal including non-noble metal members is exposed to high temperature environment or a repetitious temperature cycle. An object of the present invention is to provide an in-vehicle electronic module that has connection reliability equivalent to that of the conventional in-vehicle electronic module even when being placed in the environment of an engine compartment and can achieve cost reduction by reducing the number of parts and assembly steps.

Abstract: Pb free solder is used in die bonding. A thermal stress reduction plate is disposed between a semiconductor chip and a die pad made of a Cu alloy. The semiconductor chip and the thermal stress reduction plate are joined and the thermal stress reduction plate and the die pad are joined by a joint material of Pb free solder having Sn—Sb—Ag—Cu as its main constituent elements and having a solidus temperature not lower than 270° C. and a liquidus temperature not higher than 400° C. Thus, die bonding can be performed using the Pb free solder without generating any chip crack.

Abstract: The present invention provides a semiconductor device comprising a semiconductor element and a copper member which are bonded to each other by a bismuth-based (Bi-based) bonding material having its melting temperature of not less than 250° C., wherein silver (Ag) is diffused in a region of the bonding material in the vicinity of an interface thereof to the semiconductor element with an inclination of concentration of the silver from the interface, in order to realize a manufacture of the semiconductor device without using lead (Pb) at low cost.

Abstract: A semiconductor device is provided, in which buffer layers having a coefficient of linear expansion of 3×10?6/° C. to 8×10?6/° C. are joined to upper and lower surfaces of a silicon chip through a Pb-free solder having a thickness of not more than 0.05 mm and a melting point of not less than 250° C. The upper surface of the upper buffer layer and the lower surface of the lower buffer layer are respectively joined to a lead and a base through Pb-free solders having a thickness of not less than 0.15 mm and a melting point of not less than 250° C.

Abstract: The present invention provides a semiconductor device comprising a semiconductor element and a copper member which are bonded to each other by a bismuth-based (Bi-based) bonding material having its melting temperature of not less than 250° C., wherein silver (Ag) is diffused in a region of the bonding material in the vicinity of an interface thereof to the semiconductor element with an inclination of concentration of the silver from the interface, in order to realize a manufacture of the semiconductor device without using lead (Pb) at low cost.

Abstract: A semiconductor device is provided, in which buffer layers having a coefficient of linear expansion of 3×10?6/° C. to 8×10?6/° C. are joined to upper and lower surfaces of a silicon chip through a Pb-free solder having a thickness of not more than 0.05 mm and a melting point of not less than 250° C. The upper surface of the upper buffer layer and the lower surface of the lower buffer layer are respectively joined to a lead and a base through Pb-free solders having a thickness of not less than 0.15 mm and a melting point of not less than 250° C.

Abstract: Pb free solder is used in die bonding. A thermal stress reduction plate is disposed between a semiconductor chip and a die pad made of a Cu alloy. The semiconductor chip and the thermal stress reduction plate are joined and the thermal stress reduction plate and the die pad are joined by a joint material of Pb free solder having Sn—Sb—Ag—Cu as its main constituent elements and having a solidus temperature not lower than 270° C. and a liquidus temperature not higher than 400° C. Thus, die bonding can be performed using the Pb free solder without generating any chip crack.