Abstract: This image sensor is so formed as to control at least either the potential of a portion of a transfer channel corresponding to a third electrode or the potential of another portion of the transfer channel corresponding to a fourth electrode to be lower than the potentials of portions of the transfer channel corresponding to a first electrode and a second electrode respectively in a signal charge transferring operation and a signal charge increasing operation.

Abstract: A solid-state image sensor capable of suppressing color mixture while suppressing increase of load capacitances of transfer gates and a short circuit between two adjacent transfer gates is provided. This solid-state image sensor comprises a plurality of transfer gates and a shielding material line blocking light incident from above a prescribed pixel upon another pixel adjacent to the prescribed pixel. The shielding material line has a downward projecting portion on a region corresponding to at least one transfer gate entering an ON-state in photoreception.

Abstract: An image sensor includes a charge storage portion for storing and transferring signal charges, a first electrode for forming an electric field storing the signal charges in the charge storage portion, a charge increasing portion for increasing the signal charges stored in the charge storage portion and a second electrode for forming another electric field increasing the signal charges in the charge increasing portion, wherein the quantity of the signal charges storable in the charge storage portion is not less than the quantity of the signal charges storable in the charge increasing portion.

Abstract: An image sensor according to the present invention includes a second conductivity type first impurity region provided on a surface of a first conductivity type semiconductor substrate for constituting a transfer channel for signal charges, a charge increasing portion provided on the first impurity region for increasing the amount of signal charges by impact ionization, an increasing electrode provided on the side of the surface of the semiconductor substrate for applying a voltage to the charge increasing portion, and a second conductivity type second impurity region opposed to the first impurity region through a prescribed region of the semiconductor substrate and suppliable with charges.

Abstract: An imaging device includes a first electrode for generating an electric field storing signal charges, a charge multiplication section for multiplying the stored signal charges, a second electrode for generating the electric field in the charge multiplication section, a voltage conversion portion for converting the signal charges into a voltage, a third electrode for transferring the signal charges to the voltage conversion portion, provided between the first electrode and the voltage conversion portion, wherein the second electrode is provided on a side opposite to the third electrode and the voltage conversion portion with respect to the first electrode.

Abstract: This charge increaser includes a charge supplying portion having a signal source formed by a measurement object other than visible light and supplying signal charges corresponding to the signal source and a charge increasing portion for increasing the amount of charges corresponding to the signal charges stored in the charge supplying portion by measuring the measurement object other than visible light.

Abstract: This image sensor includes a charge transfer region transferring signal charge, a transfer electrode formed on the surface of the charge transfer region through a first insulating film, an increasing portion provided on the charge transfer region for increasing the signal charge and a transistor, provided on a region other than the charge transfer region, having a second insulating film smaller in thickness than the first insulating film.

Abstract: This image sensor includes a charge increasing portion for increasing the quantity of charges, a first electrode for applying a voltage regulating a region adjacent to the charge increasing portion to a prescribed potential, a second electrode provided adjacently to the first electrode for applying another voltage increasing the quantity of charges in the charge increasing portion, a first wire formed on a prescribed layer for supplying a signal to the first electrode and a second wire formed on a layer different from the prescribed layer for supplying another signal to the second electrode.

Abstract: An image sensor includes an increase portion for impact-ionizing and increasing signal charges, a charge increasing electrode for applying a voltage increasing the signal charges to the increase portion and an insulating film provided between the charge increasing electrode and the increase portion, wherein the insulating film includes a first insulating film made of a thermal oxide film and a second insulating film made of an oxide film, formed on the first insulating film.

Abstract: An image sensor includes a first electrode for applying a voltage to a charge storage portion, a second electrode for applying a voltage to a charge increasing portion, a third electrode provided between the first electrode and the second electrode and an impurity region of a first conductive type for forming a path through which the signal charges are transferred, wherein an impurity concentration of a region of the impurity region corresponding to a portion located under the second electrode is higher than an impurity concentration of a region of the impurity region corresponding to a portion located under the third electrode.

Abstract: An image sensor includes a carrier generating portion having a photoelectric conversion function, a voltage conversion portion for converting signal charges to a voltage, a charge increasing portion for increasing carriers generated by the carrier generating portion and a light shielding film formed to cover at least one part of the charge increasing portion.

Abstract: An imaging device that improves properties for multiplying signal charges. The imaging device includes an accumulation section which accumulates signal charges. A transfer section transfers the signal charges accumulated in the accumulation section. A multiplier section increases the signal charges accumulated in the accumulation section. The transfer section includes a first insulating member arranged on a substrate and a first electrode arranged on the first insulating member. The multiplier section includes a second insulating member arranged on the substrate and a second electrode arranged on the second insulating member. The second insulating member has a thickness which is greater than that of the first insulating member.

Abstract: In an image sensor, a first electrode, a second electrode, a third electrode and a fourth electrode are formed between a photoelectric conversion portion and a voltage conversion portion and are provided so as not to overlap with at least a part of the photoelectric conversion portion in plan view.

Abstract: A CMOS image sensor includes an impurity region provided under at least the first electrode, the second electrode and the third electrode for forming a path through which the signal charges transfer, wherein the impurity concentration of a region of the impurity region corresponding to a portion located under the first electrode is higher than the impurity concentration of a region of the impurity region corresponding to each of portions located under at least the second electrode and the third electrode.

Abstract: An image sensor includes a photoelectric conversion portion generating signal charges, a first electrode for forming an electric field transferring the signal charges generated by the photoelectric conversion portion, formed to be adjacent to the photoelectric conversion portion; and a second electrode for forming an electric field transferring the signal charges, provided on a side opposite to the photoelectric conversion portion with respect to the first electrode and formed to partially extend on the first electrode.

Abstract: An image sensor includes a charge storage portion for storing and transferring signal charges, a first electrode for forming an electric field storing the signal charges in the charge storage portion, a charge increasing portion for increasing the signal charges stored in the charge storage portion and a second electrode for forming another electric field increasing the signal charges in the charge increasing portion, wherein the quantity of the signal charges storable in the charge storage portion is not less than the quantity of the signal charges storable in the charge increasing portion.

Abstract: This image sensor is so formed as to control at least either the potential of a portion of a transfer channel corresponding to a third electrode or the potential of another portion of the transfer channel corresponding to a fourth electrode to be lower than the potentials of portions of the transfer channel corresponding to a first electrode and a second electrode respectively in a signal charge transferring operation and a signal charge increasing operation.

Abstract: A solid-state image pickup device improvable in photosensitivity also in the vicinity of an end of a substrate is provided. This solid-state image pickup device comprises a photodetection part formed on a substrate, a color filter layer and a lens, formed between the substrate and the color filter for condensing light on the photodetection part, having a lens center deviated from the center of the photodetection part by a prescribed distance.

Abstract: This image sensor includes a charge increasing portion for increasing the quantity of charges, a first electrode for applying a voltage regulating a region adjacent to the charge increasing portion to a prescribed potential, a second electrode provided adjacently to the first electrode for applying another voltage increasing the quantity of charges in the charge increasing portion, a first wire formed on a prescribed layer for supplying a signal to the first electrode and a second wire formed on a layer different from the prescribed layer for supplying another signal to the second electrode.

Abstract: An imaging device includes a first electrode for generating an electric field storing signal charges, a charge multiplication section for multiplying the stored signal charges, a second electrode for generating the electric field in the charge multiplication section, a voltage conversion portion for converting the signal charges into a voltage, a third electrode for transferring the signal charges to the voltage conversion portion, provided between the first electrode and the voltage conversion portion, wherein the second electrode is provided on a side opposite to the third electrode and the voltage conversion portion with respect to the first electrode.