Patents by Inventor Ryuichi Matsuda

Ryuichi Matsuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8480912
    Abstract: Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).
    Type: Grant
    Filed: February 15, 2007
    Date of Patent: July 9, 2013
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Ryuichi Matsuda, Masahiko Inoue, Kazuto Yoshida, Tadashi Shimazu
  • Publication number: 20130088146
    Abstract: Provided is an inductively coupled plasma generation device capable of having both a wide matching range and reduced loss. An inductively coupled plasma generation device in which high harmonic waves from a high harmonic wave power source (11) are supplied to an antenna (14) by way of a matching device (12) which matches impedance, and plasma is generated in a vacuum vessel by electromagnetic waves from the antenna (14), wherein an L-type matching circuit is used as the matching device (12) and a capacitor (C3) is provided parallel to the antenna (14) at a position closer to the antenna (14) than capacitors (C1, C2) in the L-type matching circuit.
    Type: Application
    Filed: June 13, 2011
    Publication date: April 11, 2013
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Ryuichi Matsuda, Seiji Nishikawa
  • Publication number: 20120135164
    Abstract: Provided are a plasma processing apparatus and a plasma processing method, wherein a substrate supporting table is supported such that nonuniformity of heat release is eliminated and maintenance is facilitated. In the plasma CVD apparatus (10), a supporting beam (12), which has inside thereof a through hole (12c) penetrating the facing side walls (11a) of a vacuum chamber (11) and traverses the vacuum chamber (11) by passing through the center of the vacuum chamber, is integrally formed with the vacuum chamber (11). In the center portion of the upper surface of the supporting beam (12), an upper surface opening (12a) for attaching a substrate supporting table (13) is provided, and a substrate supporting table (13) having a cylindrical shape is attached to the upper surface opening (12a) by having therebetween a first seal member that seals together the vacuum side and the atmosphere side.
    Type: Application
    Filed: May 24, 2010
    Publication date: May 31, 2012
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Ryuichi Matsuda, Kazuto Yoshida
  • Publication number: 20120132619
    Abstract: A gas discharge structure, and a device and a method for plasma processing which are capable of a uniform gas discharge and have improved maintainability. A pendulum gate valve (15) is eccentrically mounted to a vacuum chamber (11) in such a manner that the center (Mc) of the area of an opening region (M) corresponding to the center value of the recommended value for the use of the opening ratio of the pendulum gate valve (15) coincides with the axis center (Cc) of the vacuum chamber (11).
    Type: Application
    Filed: May 24, 2010
    Publication date: May 31, 2012
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Ryuichi Matsuda, Kazuto Yoshida
  • Publication number: 20120125891
    Abstract: Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber (11), the inner cylinder (15) composed of a surface-alumited aluminum, disposes a substrate in a plasma diffusion region, and performs plasma processing. A plurality of protruding portions (15a) in point-contact with the vacuum chamber (11) are provided on the lower end portion of the inner cylinder (15), the alumite film (16) on the leading end portion (15b) of each of the protruding portion (15a) is removed, and the inner cylinder and the vacuum chamber (11) are electrically connected to each other.
    Type: Application
    Filed: May 24, 2010
    Publication date: May 24, 2012
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Ryuichi Matsuda, Kazuto Yoshida, Yuichi Kawano
  • Publication number: 20120111502
    Abstract: Disclosed is the structure of a substrate supporting table wherein corrosion of a bellows is eliminated, generation of dusts from the bellows is suppressed, and the volume and the weight of the sections to be driven are reduced. A plasma processing apparatus is also disclosed. In the substrate supporting table for the plasma processing apparatus (10), a cylindrical inner tube (12), the bellows (13), an outer tube (14) and a cover member (15) are sequentially disposed concentrically from the inner side, and a drive member (21) to be driven by means of a drive mechanism (24) is attached to the rear surface of the placing table (16) through an opening (11b) and the inside of the inner tube (12).
    Type: Application
    Filed: May 24, 2010
    Publication date: May 10, 2012
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Ryuichi Matsuda, Kazuto Yoshida
  • Publication number: 20110297321
    Abstract: An object is to provide a substrate support stage of a plasma processing apparatus, in which electrical discharge from a connection terminal is prevented with a simple structure. In the substrate support stage of a plasma processing apparatus, an electrostatic attraction plate (13) configured to electrostatically attract a substrate (W) and to apply a bias to the substrate (W) is provided on an upper surface of a support stage (10) in a vacuum chamber, a sealing member (12) is provided on the upper surface of the support stage (10), an outer periphery side of the sealing member (12) is hermetically sealed as the vacuum chamber, and a connection terminal (17) commonly used for electrostatic attraction voltage supply and bias power supply is disposed on an atmosphere side which is an inner periphery side of the sealing member (12).
    Type: Application
    Filed: October 15, 2009
    Publication date: December 8, 2011
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Ryuichi Matsuda, Akihiko Matsukura, Kenjiro Uemitsu, Hisashi Yanagida
  • Patent number: 7977243
    Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
    Type: Grant
    Filed: January 26, 2010
    Date of Patent: July 12, 2011
    Assignee: Canon Anelva Corporation
    Inventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
  • Publication number: 20110104363
    Abstract: An object is to provide a plasma processing apparatus and a method for controlling a substrate attraction force in a plasma processing apparatus by which the substrate attraction force is controlled to be constant without being influenced by the number of processed substrates.
    Type: Application
    Filed: March 9, 2009
    Publication date: May 5, 2011
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Ryuichi Matsuda, Akihiko Matsukura
  • Publication number: 20100236482
    Abstract: An object is to provide a plasma film forming apparatus capable of reducing particles even in the case in which a film is formed by applying a bias to a substrate. In the plasma film forming apparatus in which a bias is applied to a substrate (5) placed on a supporting table (4) in a chamber and forming a thin film on the substrate (5) by using plasma, the supporting table (4) has a columnar supporting table main body (4b) having a contact surface in contact with the substrate (5), the contact surface (4a) having an outer diameter (c) smaller than an outer diameter (W) of the substrate (5); and a flange portion (4c) extended in an outer circumferential direction from a side surface (4d) of the supporting table main body (4b); wherein a predetermined first gap (G1) is formed between the flange portion (4c) and a rear surface of the outer circumference of the substrate (5).
    Type: Application
    Filed: October 14, 2008
    Publication date: September 23, 2010
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Hidetaka Kafuku, Tadashi Shimazu, Ryuichi Matsuda, Akihiko Matsukura, Seiji Nishikawa
  • Publication number: 20100124825
    Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
    Type: Application
    Filed: January 26, 2010
    Publication date: May 20, 2010
    Applicant: CANON ANELVA CORPORATION
    Inventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
  • Publication number: 20100047471
    Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
    Type: Application
    Filed: October 27, 2009
    Publication date: February 25, 2010
    Applicant: CANON ANELVA CORPORATION
    Inventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
  • Patent number: 7659209
    Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
    Type: Grant
    Filed: May 17, 2007
    Date of Patent: February 9, 2010
    Assignee: Canon Anelva Corporation
    Inventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
  • Publication number: 20090324848
    Abstract: A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (CuxCly). The precursor (CuxCly) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.
    Type: Application
    Filed: July 29, 2009
    Publication date: December 31, 2009
    Applicant: CANON ANELVA CORPORATION
    Inventors: Ryuichi Matsuda, Naoki Yahata, Hitoshi Sakamoto
  • Patent number: 7588799
    Abstract: A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (CuxCly). The precursor (CuxCly) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.
    Type: Grant
    Filed: December 29, 2005
    Date of Patent: September 15, 2009
    Assignee: Canon Anelva Corporation
    Inventors: Ryuichi Matsuda, Naoki Yahata, Hitoshi Sakamoto
  • Publication number: 20090127227
    Abstract: Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).
    Type: Application
    Filed: February 15, 2007
    Publication date: May 21, 2009
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Ryuichi Matsuda, Masahiko Inoue, Kazuto Yoshida, Tadashi Shimazu
  • Patent number: 7520246
    Abstract: A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equal. The power supply antenna can generate a uniform electric field and a uniform magnetic field, although it has the plural coils.
    Type: Grant
    Filed: October 3, 2005
    Date of Patent: April 21, 2009
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Ryuichi Matsuda, Noriaki Ueda, Kazuto Yoshida
  • Publication number: 20080115728
    Abstract: When the size of a substrate 1 is instructed, a map of uniform sputter-etching possible region based on the relationship between the diameter-size Dp of a high-density plasma region and the height H from the center of the high-density plasma region to the bottom of a plasma diffusion region is read out; on the basis of the internal pressure and the frequency of electromagnetic waves from an antenna 116, the value of the height Hp from the center of the high-density plasma region to the upper surface inside a vacuum chamber 111, and the value of the Dp are obtained; on the basis of the internal pressure and the magnitude of the self-bias potential of the substrate 1, the height Hs between the bottom of the plasma diffusion region and the top surface of a supporting table 113 is obtained; on the basis of the above-mentioned values of Dp, Hp and Hs, the value of the H in the uniform sputter-etching possible region is obtained from the map; and a lifting-and-lowering device 121 is controlled so that H can have th
    Type: Application
    Filed: February 22, 2006
    Publication date: May 22, 2008
    Applicant: Mitsubishi Heavy Industries, Ltd
    Inventors: Ryuichi Matsuda, Masahiko Inoue
  • Patent number: 7335315
    Abstract: The present invention attracts a wafer 6, placed on a susceptor 5, toward the susceptor 5 by the electrostatic attractive power of an electrostatic chuck electrode 7, varies the output voltage of a variable direct current power source 23 for the electrostatic chuck electrode 7 while measuring the temperature of the wafer 6 by a temperature detection sensor 21; and detects the potential of the wafer 6 based on the output voltage of the variable direct current power source 23 at a time when the temperature of the wafer 6 peaks.
    Type: Grant
    Filed: June 17, 2003
    Date of Patent: February 26, 2008
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Ryuichi Matsuda, Yuichi Kawano, Masahiko Inoue
  • Publication number: 20070272655
    Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
    Type: Application
    Filed: May 17, 2007
    Publication date: November 29, 2007
    Inventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori