Patents by Inventor Ryuichi Matsuda

Ryuichi Matsuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070224364
    Abstract: A plasma film deposition apparatus (plasma processing apparatus) is disclosed, which includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface, and which supplies the second antenna 11b with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11a by power supply means, whereby lines of magnetic force, F2, heading in a direction opposite to the direction of lines of magnetic force, F1, appearing at the site of the antenna 11a are generated at the site of the second antenna 11b. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated in a wide range within a tubular container 2.
    Type: Application
    Filed: May 4, 2007
    Publication date: September 27, 2007
    Inventors: Ryuichi Matsuda, Tadashi Shimazu, Masahiko Inoue
  • Publication number: 20070141274
    Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
    Type: Application
    Filed: December 14, 2006
    Publication date: June 21, 2007
    Inventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
  • Publication number: 20070117363
    Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
    Type: Application
    Filed: December 14, 2006
    Publication date: May 24, 2007
    Inventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
  • Publication number: 20070087577
    Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
    Type: Application
    Filed: December 14, 2006
    Publication date: April 19, 2007
    Inventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
  • Publication number: 20060110535
    Abstract: A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (CuxCly). The precursor (CuxCly) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.
    Type: Application
    Filed: December 29, 2005
    Publication date: May 25, 2006
    Inventors: Ryuichi Matsuda, Naoki Yahata, Hitoshi Sakamoto
  • Publication number: 20060054593
    Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
    Type: Application
    Filed: October 19, 2005
    Publication date: March 16, 2006
    Inventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
  • Publication number: 20060027168
    Abstract: A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equal. The power supply antenna can generate a uniform electric field and a uniform magnetic field, although it has the plural coils.
    Type: Application
    Filed: October 3, 2005
    Publication date: February 9, 2006
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Ryuichi Matsuda, Noriaki Ueda, Kazuto Yoshida
  • Publication number: 20050202183
    Abstract: A plasma film deposition apparatus (plasma processing apparatus) is disclosed, which includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface, and which supplies the second antenna 11b with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11a by power supply means, whereby lines of magnetic force, F2, heading in a direction opposite to the direction of lines of magnetic force, F1, appearing at the site of the antenna 11a are generated at the site of the second antenna 11b. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated in a wide range within a tubular container 2.
    Type: Application
    Filed: June 17, 2003
    Publication date: September 15, 2005
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Ryuichi Matsuda, Tadashi Shimazu, Masahiko Inoue
  • Publication number: 20050174135
    Abstract: The present invention attracts a wafer 6, placed on a susceptor 5, toward the susceptor 5 by the electrostatic attractive power of an electrostatic chuck electrode 7, varies the output voltage of a variable direct current power source 23 for the electrostatic chuck electrode 7 while measuring the temperature of the wafer 6 by a temperature detection sensor 21; and detects the potential of the wafer 6 based on the output voltage of the variable direct current power source 23 at a time when the temperature of the wafer 6 peaks.
    Type: Application
    Filed: June 17, 2003
    Publication date: August 11, 2005
    Inventors: Ryuichi Matsuda, Yuichi Kawano, Masahiko Inoue
  • Publication number: 20040233609
    Abstract: An electrode pattern (3) of an electrostatic chuck (100) includes linear portions (31a, 31b) in a radial direction and a plurality of [i]concentric C-shaped portions (32a, 32b) branching out from the linear portions (31a, 31b). The linear portions are disposed opposite to each other in a diametrical direction and are roughly in a straight line. The C-shaped portions (32a, 32b) are in the form of concentric circles and these concentric circles are engaged alternately like teeth of a comb.
    Type: Application
    Filed: December 22, 2003
    Publication date: November 25, 2004
    Inventors: Kazuto Yoshida, Masahiko Inoue, Ryuichi Matsuda, Hitoshi Sakamoto
  • Publication number: 20030091739
    Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
    Type: Application
    Filed: October 23, 2002
    Publication date: May 15, 2003
    Inventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
  • Publication number: 20030089315
    Abstract: A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (CuxCly). The precursor (CuxCly) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.
    Type: Application
    Filed: October 22, 2002
    Publication date: May 15, 2003
    Inventors: Ryuichi Matsuda, Naoki Yahata, Hitoshi Sakamoto
  • Publication number: 20020018025
    Abstract: A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equal. The power supply antenna can generate a uniform electric field and a uniform magnetic field, although it has the plural coils.
    Type: Application
    Filed: June 18, 2001
    Publication date: February 14, 2002
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Ryuichi Matsuda, Noriaki Ueda, Kazuto Yoshida
  • Patent number: 4985401
    Abstract: A superconductor is produced by electric discharge explosion flame spraying of a composite body of constituents of an immiscible alloy. The electrically discharged composite body is deposited on a substrate and the resultant alloy is oxidized to yield an oxide of the alloy having superconductive property. This process can be applied to the Ln-Ba-Cu system (Ln is at least one of the rare earth elements including Y), typically the Y.sub.1 Ba.sub.2 Cu.sub.3 - or Y.sub.2 Ba.sub.4 Cu.sub.8 system, or other immiscible alloy systems such as the Bi-(Ca, Sr)-Cu system to form an oxide thereof.
    Type: Grant
    Filed: February 24, 1989
    Date of Patent: January 15, 1991
    Assignee: Aisin Seiki Kabushiki Kaisha
    Inventors: Akira Sawaoka, Ryuichi Matsuda, Tadashi Kondo