Patents by Inventor Ryuji Sugiura
Ryuji Sugiura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11817319Abstract: A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.Type: GrantFiled: November 24, 2021Date of Patent: November 14, 2023Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Takeshi Sakamoto, Ryuji Sugiura, Yuta Kondoh, Naoki Uchiyama
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Publication number: 20230326748Abstract: A manufacturing method of a semiconductor device, includes: forming a gas vent recess in a first surface of a compound semiconductor substrate, which includes a plurality of device regions adjacent to the first surface, along an interface between the plurality of device regions; forming an altered layer inside the compound semiconductor substrate to extend along the first surface at a depth corresponding to a range of a depth of the gas vent recess by applying a laser beam; dividing the compound semiconductor substrate at the altered layer into a first part including the first surface and a second part including a second surface of the compound semiconductor substrate opposite to the first surface; and forming a metal film to cover a divided surface of the first part while exposing the gas vent recess.Type: ApplicationFiled: March 23, 2023Publication date: October 12, 2023Inventors: SHOSUKE NAKABAYASHI, MASATAKE NAGAYA, CHIAKI SASAOKA, SHOICHI ONDA, JUN KOJIMA, DAISUKE KAWAGUCHI, RYUJI SUGIURA, TOSHIKI YUI, KEISUKE HARA, TOMOMI ARATANI
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Publication number: 20230230829Abstract: A method of manufacturing a semiconductor element includes formation of a modified layer, detection of a first region, and cutting of a semiconductor wafer. In the formation of the modified layer, a laser is irradiated on the semiconductor wafer to form the modified layer extending along a surface of the semiconductor wafer inside the semiconductor wafer. The surface of the semiconductor wafer includes a peripheral portion having the first region and a second region. The first region is a region in which the modified layer is not located, and the second region is a region in which the modified layer is formed. In the cutting of the semiconductor wafer, the semiconductor wafer is cut at the modified layer starting from the second region.Type: ApplicationFiled: December 29, 2022Publication date: July 20, 2023Inventors: SHOSUKE NAKABAYASHI, JUNJI OHARA, MASATAKE NAGAYA, CHIAKI SASAOKA, SHOICHI ONDA, JUN KOJIMA, DAISUKE KAWAGUCHI, RYUJI SUGIURA, TOSHIKI YUI, KEISUKE HARA
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Publication number: 20220084827Abstract: A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.Type: ApplicationFiled: November 24, 2021Publication date: March 17, 2022Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Takeshi SAKAMOTO, Ryuji Sugiura, Yuta Kondoh, Naoki Uchiyama
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Patent number: 11211250Abstract: A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.Type: GrantFiled: July 13, 2018Date of Patent: December 28, 2021Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Takeshi Sakamoto, Ryuji Sugiura, Yuta Kondoh, Naoki Uchiyama
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Patent number: 11158601Abstract: A laminating step includes a first bonding step of bonding a circuit layer of a second wafer to a circuit layer of a first wafer, a grinding step of grinding a semiconductor substrate of the second wafer, and a second bonding step of bonding a circuit layer of the third wafer to the semiconductor substrate of the second wafer. In a laser light irradiation step, a modified region is formed and a fracture extends from the modified region along a laminating direction of a laminated body by irradiating the semiconductor substrate of the first wafer with a laser light.Type: GrantFiled: July 18, 2018Date of Patent: October 26, 2021Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Takeshi Sakamoto, Ryuji Sugiura, Yuta Kondoh, Naoki Uchiyama
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Patent number: 11069672Abstract: A laminated element manufacturing method includes a first forming step of forming a first gettering region for each of functional elements by irradiating a semiconductor substrate of a first wafer with a laser light, a first grindsing step of grinding the semiconductor substrate of the first wafer and removing a portion of the first gettering region, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second gettering region for each of the functional elements by irradiating the semiconductor substrate of the second wafer with a laser light, and a second grinding step of grinding the semiconductor substrate of the second wafer and removing a portion of the second gettering region.Type: GrantFiled: July 13, 2018Date of Patent: July 20, 2021Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Takeshi Sakamoto, Ryuji Sugiura, Yuta Kondoh, Naoki Uchiyama
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Publication number: 20210057402Abstract: A laminated element manufacturing method includes a first forming step of forming a first gettering region for each of functional elements by irradiating a semiconductor substrate of a first wafer with a laser light, a first grindsing step of grinding the semiconductor substrate of the first wafer and removing a portion of the first gettering region, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second gettering region for each of the functional elements by irradiating the semiconductor substrate of the second wafer with a laser light, and a second grinding step of grinding the semiconductor substrate of the second wafer and removing a portion of the second gettering region.Type: ApplicationFiled: July 13, 2018Publication date: February 25, 2021Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Takeshi SAKAMOTO, Ryuji SUGIURA, Yuta KONDOH, Naoki UCHIYAMA
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Publication number: 20210057222Abstract: A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.Type: ApplicationFiled: July 13, 2018Publication date: February 25, 2021Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Takeshi SAKAMOTO, Ryuji SUGIURA, Yuta KONDOH, Naoki UCHIYAMA
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Publication number: 20200176415Abstract: A laminating step includes a first bonding step of bonding a circuit layer of a second wafer to a circuit layer of a first wafer, a grinding step of grinding a semiconductor substrate of the second wafer, and a second bonding step of bonding a circuit layer of the third wafer to the semiconductor substrate of the second wafer. In a laser light irradiation step, a modified region is formed and a fracture extends from the modified region along a laminating direction of a laminated body by irradiating the semiconductor substrate of the first wafer with a laser light.Type: ApplicationFiled: July 18, 2018Publication date: June 4, 2020Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Takeshi SAKAMOTO, Ryuji SUGIURA, Yuta KONDOH, Naoki UCHIYAMA
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Patent number: 9409256Abstract: To provide a laser processing method which is capable of enhancing the dividing performance according to a required quality. By irradiating an object to be processed with a laser light L having a pulse waveform in which its half width and its bottom width are equal to one another, a plurality of modified spots are formed along a line to cut inside the object, and a modified region is formed with the plurality of modified spots. Here, a laser light source 101 controls a drive power source 51 by a laser light source controller 102, to switch among a pulse waveform among first to third pulse waveforms according to a PE value of the laser light L. In the case of a low PE value, a first pulse waveform formed such that a peak value is located on its first half side and into a saw-blade shape is set as the pulse waveform, and in the case of a high PE value, a second pulse waveform formed such that a peak value is located on its latter half side and into a saw-blade shape is set as the pulse waveform.Type: GrantFiled: May 20, 2011Date of Patent: August 9, 2016Assignee: HAMAMATSU PHOTONICS K.K.Inventor: Ryuji Sugiura
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Patent number: 9076855Abstract: An object to be processed 1 is irradiated with laser light L along a line to cut 5a while locating a converging point within the object 1, so as to form a modified region 7a. Thereafter, the irradiation with the laser light L is performed again along the line 5a, so as to form a modified region 7b between a front face 3 and the first modified region 7a in the object 1 and generate a fracture Cb extending from the modified region 7b to the front face 3. Therefore, a deflecting force F1 occurring when forming the modified region 7a in the object 1 can be released and canceled out by the fracture Cb. As a result, the object 1 can be inhibited from deflecting.Type: GrantFiled: March 19, 2010Date of Patent: July 7, 2015Assignee: HAMAMATSU PHOTONICS K.K.Inventor: Ryuji Sugiura
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Patent number: 9035216Abstract: A laser processing device (100) comprises a laser light source (101) for emitting a laser light (L) and a laser light source controller (102) for controlling the pulse width of the laser light (L) and irradiates an object to be processed (1) with the laser light (L) while locating a converging point (P) within the object (1), so as to form a modified region along a line to cut (5) of the object (1) and generate a fracture extending in a thickness direction of the object (1) from the modified region as the modified region is formed. In the laser processing device (100), the laser light source controller (102) changes the pulse width of the laser light (L) according to a data table in which the fracture length, the thickness of the object (1), and the pulse width of the laser light (L) are associated with each other. That is, the pulse width is changed according to the fracture length generated from the modified region.Type: GrantFiled: March 29, 2010Date of Patent: May 19, 2015Assignee: HAMAMATSU PHOTONICS K.K.Inventor: Ryuji Sugiura
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Patent number: 8865566Abstract: Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.Type: GrantFiled: March 14, 2013Date of Patent: October 21, 2014Assignee: Hamamatsu Photonics K.K.Inventors: Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama, Ryuji Sugiura
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Patent number: 8551817Abstract: A wafer having a front face formed with a functional device is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting due to a molten processed region within the wafer along a line. Consequently, a fracture can be generated from the starting point region for cutting naturally or with a relatively small force, so as to reach the front face and rear face. Therefore, when an expansion film is attached to the rear face of the wafer by way of a die bonding resin layer after forming the starting point region for cutting and then expanded, the wafer and die bonding resin layer can be cut along the line.Type: GrantFiled: October 7, 2011Date of Patent: October 8, 2013Assignee: Hamamatsu Photonics K.K.Inventors: Kenshi Fukumitsu, Fumitsugu Fukuyo, Naoki Uchiyama, Ryuji Sugiura, Kazuhiro Atsumi
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Publication number: 20130252403Abstract: Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.Type: ApplicationFiled: March 14, 2013Publication date: September 26, 2013Applicant: Hamamatsu Photonics K.K.Inventors: Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama, Ryuji Sugiura
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Patent number: 8513567Abstract: In the laser processing method, the cross-sectional form of laser light L at a converging point P is such that the maximum length in a direction perpendicular to a line to cut 5 is shorter than the maximum length in a direction parallel to the line to cut 5. Therefore, when seen from the incident direction of the laser light L, a modified region 7 formed within a silicon wafer 11 has such a shape that the maximum length in the direction perpendicular to the line to cut 5 is shorter than the maximum length in the direction parallel to the line to cut 5. Forming the modified region 7 having such a shape within the object 1 can restrain twist hackles from occurring on cut surfaces when cutting the object 1 from the modified region 7 acting as a cutting start point, thereby making it possible to improve the flatness of the cut surfaces.Type: GrantFiled: September 13, 2006Date of Patent: August 20, 2013Assignee: Hamamatsu Photonics K.K.Inventors: Tetsuya Osajima, Ryuji Sugiura, Kazuhiro Atsumi
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Patent number: 8450187Abstract: Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.Type: GrantFiled: September 10, 2012Date of Patent: May 28, 2013Assignee: Hamamatsu Photonics K.K.Inventors: Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama, Ryuji Sugiura
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Patent number: 8409968Abstract: Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.Type: GrantFiled: August 9, 2011Date of Patent: April 2, 2013Assignee: Hamamatsu Photonics K.K.Inventors: Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama, Ryuji Sugiura
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Publication number: 20130068739Abstract: To provide a laser processing method which is capable of enhancing the dividing performance according to a required quality. By irradiating an object to be processed with a laser light L having a pulse waveform in which its half width and its bottom width are equal to one another, a plurality of modified spots are formed along a line to cut inside the object, and a modified region is formed with the plurality of modified spots. Here, a laser light source 101 controls a drive power source 51 by a laser light source controller 102, to switch among a pulse waveform among first to third pulse waveforms according to a PE value of the laser light L. In the case of a low PE value, a first pulse waveform formed such that a peak value is located on its first half side and into a saw-blade shape is set as the pulse waveform, and in the case of a high PE value, a second pulse waveform formed such that a peak value is located on its latter half side and into a saw-blade shape is set as the pulse waveform.Type: ApplicationFiled: May 20, 2011Publication date: March 21, 2013Applicant: HAMAMATSU PHOTONICS K.K.Inventor: Ryuji Sugiura