Patents by Inventor Ryusei NAITO
Ryusei NAITO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240038810Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: ApplicationFiled: October 10, 2023Publication date: February 1, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke OTAKE, Akira MATSUMOTO, Junpei YAMAMOTO, Ryusei NAITO, Masahiko NAKAMIZO, Toshifumi WAKANO
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Publication number: 20220020789Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: ApplicationFiled: September 30, 2021Publication date: January 20, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke OTAKE, Akira MATSUMOTO, Junpei YAMAMOTO, Ryusei NAITO, Masahiko NAKAMIZO, Toshifumi WAKANO
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Patent number: 10804309Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: GrantFiled: November 25, 2019Date of Patent: October 13, 2020Assignee: Sony Semiconductor Solutions CorporationInventors: Yusuke Otake, Akira Matsumoto, Junpei Yamamoto, Ryusei Naito, Masahiko Nakamizo, Toshifumi Wakano
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Publication number: 20200321369Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: ApplicationFiled: June 18, 2020Publication date: October 8, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke OTAKE, Akira MATSUMOTO, Junpei YAMAMOTO, Ryusei NAITO, Masahiko NAKAMIZO, Toshifumi WAKANO
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Publication number: 20200091208Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: ApplicationFiled: November 25, 2019Publication date: March 19, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke OTAKE, Akira MATSUMOTO, Junpei YAMAMOTO, Ryusei NAITO, Masahiko NAKAMIZO, Toshifumi WAKANO
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Patent number: 10580817Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: GrantFiled: May 10, 2019Date of Patent: March 3, 2020Assignee: Sony Semiconductor Solutions CorporationInventors: Yusuke Otake, Akira Matsumoto, Junpei Yamamoto, Ryusei Naito, Masahiko Nakamizo, Toshifumi Wakano
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Patent number: 10446601Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode (105) and a cathode (101). The cathode is in a well region (103) of the first substrate. The first pixel includes an isolation region (108) that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region (107a) between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: GrantFiled: October 18, 2017Date of Patent: October 15, 2019Assignee: Sony Semiconductor Solutions CorporationInventors: Yusuke Otake, Akira Matsumoto, Junpei Yamamoto, Ryusei Naito, Masahiko Nakamizo, Toshifumi Wakano
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Publication number: 20190267414Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: ApplicationFiled: May 10, 2019Publication date: August 29, 2019Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke OTAKE, Akira MATSUMOTO, Junpei YAMAMOTO, Ryusei NAITO, Masahiko NAKAMIZO, Toshifumi WAKANO
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Patent number: 10192912Abstract: The present technology relates to a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device, in which degradation of transfer characteristics of a photo diode can be suppressed. A floating diffusion is formed to reach the same depth as a layer of a photo diode formed on a silicon substrate, and a transfer transistor gate is formed therebetween. A channel that is opened/closed by control of the transfer transistor gate is formed in the silicon substrate formed with the photo diode. With this configuration, charge accumulated in the photo diode can be transferred to the floating diffusion in a vertical direction relative to the depth direction, and degradation of transfer characteristics caused by elimination of the transfer channel can be suppressed by setting the transfer channel in the depth direction. The present technology can be applied to a solid-state imaging device.Type: GrantFiled: January 17, 2018Date of Patent: January 29, 2019Assignee: Sony Semiconductor Solutions CorporationInventors: Takuya Sano, Ryusei Naito, Kazunobu Ota
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Publication number: 20190006399Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode (105) and a cathode (101). The cathode is in a well region (103) of the first substrate. The first pixel includes an isolation region (108) that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region (107a) between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: ApplicationFiled: October 18, 2017Publication date: January 3, 2019Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke OTAKE, Akira MATSUMOTO, Junpei YAMAMOTO, Ryusei NAITO, Masahiko NAKAMIZO, Toshifumi WAKANO
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Publication number: 20180145101Abstract: The present technology relates to a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device, in which degradation of transfer characteristics of a photo diode can be suppressed. A floating diffusion is formed to reach the same depth as a layer of a photo diode formed on a silicon substrate, and a transfer transistor gate is formed therebetween. A channel that is opened/closed by control of the transfer transistor gate is formed in the silicon substrate formed with the photo diode. With this configuration, charge accumulated in the photo diode can be transferred to the floating diffusion in a vertical direction relative to the depth direction, and degradation of transfer characteristics caused by elimination of the transfer channel can be suppressed by setting the transfer channel in the depth direction. The present technology can be applied to a solid-state imaging device.Type: ApplicationFiled: January 17, 2018Publication date: May 24, 2018Inventors: Takuya SANO, Ryusei NAITO, Kazunobu OTA
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Patent number: 9887219Abstract: The present technology relates to a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device, in which degradation of transfer characteristics of a photo diode can be suppressed. A floating diffusion is formed to reach the same depth as a layer of a photo diode formed on a silicon substrate, and a transfer transistor gate is formed therebetween. A channel that is opened/closed by control of the transfer transistor gate is formed in the silicon substrate formed with the photo diode. With this configuration, charge accumulated in the photo diode can be transferred to the floating diffusion in a vertical direction relative to the depth direction, and degradation of transfer characteristics caused by elimination of the transfer channel can be suppressed by setting the transfer channel in the depth direction. The present technology can be applied to a solid-state imaging device.Type: GrantFiled: May 1, 2015Date of Patent: February 6, 2018Assignee: Sony Semiconductor Solutions CorporationInventors: Takuya Sano, Ryusei Naito, Kazunobu Ota
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Publication number: 20170077155Abstract: The present technology relates to a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device, in which degradation of transfer characteristics of a photo diode can be suppressed. A floating diffusion is formed to reach the same depth as a layer of a photo diode formed on a silicon substrate, and a transfer transistor gate is formed therebetween. A channel that is opened/closed by control of the transfer transistor gate is formed in the silicon substrate formed with the photo diode. With this configuration, charge accumulated in the photo diode can be transferred to the floating diffusion in a vertical direction relative to the depth direction, and degradation of transfer characteristics caused by elimination of the transfer channel can be suppressed by setting the transfer channel in the depth direction. The present technology can be applied to a solid-state imaging device.Type: ApplicationFiled: May 1, 2015Publication date: March 16, 2017Inventors: Takuya SANO, Ryusei NAITO, Kazunobu OTA