Abstract: A method of manufacturing a vibrator element having a vibrating part which vibrates in a thickness-shear mode, and a thin-wall part which is coupled to the vibrating part, and which is thinner than the vibrating part includes a preparation step of preparing a quartz crystal substrate, a resist film formation step of forming a resist film in a vibrating part area of the quartz crystal substrate where the vibrating part is formed, an etching step of etching the quartz crystal substrate via the resist film, then ending the etching in a state in which the resist film remains in the vibrating part area to thereby form the vibrating part and the thin-wall part, and a resist film removal step of removing the resist film remaining.

Abstract: A method for manufacturing a vibration element that includes a base portion, a first vibration arm and a second vibration arm that extend from the base portion along a first direction and are arranged along a second direction intersecting the first direction, and bottomed grooves on both main surfaces of the first vibration arm and both main surfaces of the second vibration arm includes: a preparing step of preparing a crystal substrate; a protective film forming step of forming a protective film on the crystal substrate except for groove regions that are regions in which the grooves are formed; and a dry etching step of dry etching the crystal substrate through the protective film to form the grooves. The grooves provided in at least one of the first vibration arm and the second vibration arm include a first groove and a second groove arranged along the second direction.

Abstract: A vibrator device includes a vibrator element, a base to which the vibrator element is coupled, and a lid bonded to the base. The vibrator element is accommodated in an accommodation space between the lid and the base. At least one of the base or the lid includes a first semiconductor substrate connected to a ground potential and having a conductivity type that is p-type or n-type. The vibrator element includes a vibrator substrate, a first electrode disposed on a side of the vibrator substrate closer to the first semiconductor substrate, and a second electrode disposed on a side of the vibrator substrate farther from the first semiconductor substrate. L1?0.2×10?3 and d1??×S1×1012, wherein L1 [m] is the height of the accommodation space, d1 [m] is the distance between the first semiconductor substrate and the first electrode, S1 [m2] is the area of the first electrode, and ? [F/m] is the permittivity of the accommodation space.

Abstract: A method for manufacturing a vibrator device includes a first dry etching step of dry-etching a quartz crystal substrate having a first surface and a second surface from the side facing the first surface to form first grooves and part of the outer shapes of a first vibrating arm and a second vibrating arm, a second dry etching step of dry-etching the quartz crystal substrate from the side facing the second surface to form second grooves and part of the outer shapes of the first vibrating arm and the second vibrating arm, and thereafter, a wet etching step of wet-etching the side surfaces of the first vibrating arm and the second vibrating arm.

Abstract: A method for manufacturing a vibration element includes: a first dry etching step of dry etching the quartz crystal substrate from a first surface and forming first grooves and contours of a first vibrating arm and a second vibrating arm on the first surface; and a second dry etching step of dry etching the quartz crystal substrate from a second surface side and forming second grooves and contours of the first vibrating arm and the second vibrating arm on the second surface, in which Wa/Aa<1 in at least one of the first and second dry etching steps, Wa is a depth of the first and second grooves formed in the first and second dry etching steps, and Aa is a depth of the contours formed in the first and second dry etching steps.

Abstract: A method of manufacturing a resonator element including a substrate having a thin-wall part and a thick-wall part, and an electrode part having an excitation electrode arranged in an excitation electrode placement area of the thin-wall part, a pad electrode arranged in a pad electrode placement area of the thick-wall part, and an extraction electrode which is configured to couple the excitation electrode and the pad electrode to each other, and which is arranged in an extraction electrode placement area of the substrate, includes a metal layer formation step of forming a metal layer on the substrate, a protective film formation step of forming a protective film in an area overlapping at least a part of the extraction electrode placement area in a plan view on the metal layer, and a metal layer etching step of etching the metal layer arranged in the excitation electrode placement area via the protective film to thereby reduce a wall thickness of the metal layer.

Abstract: A resonator element includes a substrate including a thin-wall part and a thick-wall part, and an electrode part including an excitation electrode, a pad electrode, and an extraction electrode, wherein the electrode part includes a first electrode layer arranged in the pad electrode placement area and the first area on the substrate, a second electrode layer which is arranged in an area overlapping the first electrode layer on the first electrode layer, and which is larger in thickness than the first electrode layer, a third electrode layer which is arranged throughout an area overlapping the pad electrode placement area and the first area in a plan view on the second electrode layer, and an area overlapping the second area and the excitation electrode placement area in a plan view on the substrate, and which is smaller in thickness than the second electrode layer, and a fourth electrode layer which is arranged in an area overlapping the third electrode layer on the third electrode layer, and which is smaller

Abstract: A vibration device includes a quartz substrate including a first vibration section, a second vibration section, and a third vibration section, a pair of first excitation electrodes formed at two principal surfaces of the quartz substrate, a pair of second excitation electrodes so formed as to sandwich the second vibration section in the thickness direction of the quartz substrate, and a pair of third excitation electrodes so formed as to sandwich the third vibration section in the thickness direction of the quartz substrate. At least one of the pair of second excitation electrodes is formed at a first inclining surface that inclines with respect to the two principal surfaces. At least one of the pair of third excitation electrodes is formed at a second inclining surface that inclines with respect to the two principal surfaces. The second inclining surface inclines with respect to the first inclining surface.

Abstract: A resonator device includes: a base; a resonator element that includes a resonator substrate and an electrode; a conductive layer that is disposed on the base; a metal bump that is disposed between the conductive layer and the resonator element, and that electrically couples the conductive layer and the electrode while bonding the conductive layer and the resonator element; and at least one of a first low elastic modulus layer that is interposed between the base and the conductive layer, that overlaps the metal bump in a plan view of the base, and that has an elastic modulus smaller than that of the metal bump, and a second low elastic modulus layer that is interposed between the resonator substrate and the electrode, that overlaps the metal bump in the plan view of the base, and that has an elastic modulus smaller than that of the metal bump.

Abstract: A vibrator device includes: a base including a semiconductor substrate having an integrated circuit disposed at a second surface; a vibration element electrically coupled to the integrated circuit; and a lid having an end surface of a side wall bonded to a first surface at a bonding portion. A first circuit of the integrated circuit includes a first circuit element disposed in a second region surrounded by a first region that overlaps the bonding portion in a plan view. The first circuit element is a passive element or a transistor, and ?<90° is satisfied, ? being an angle formed by the first surface and an inner side surface of the side wall.

Abstract: A vibrator device includes: a base including a semiconductor substrate having an integrated circuit disposed at a first surface; a vibration element electrically coupled to the integrated circuit; and a lid having an end surface of a side wall bonded to the first surface at a bonding portion. A first circuit of the integrated circuit includes a first circuit element disposed in a first region overlapping the bonding portion in a plan view. The first circuit element is a passive element or a transistor, and ?<90° is satisfied, ? being an angle formed by the first surface and an inner side surface of the side wall.

Abstract: A vibrator device includes: a base having an integrated circuit disposed at a second surface; a vibration element; and a lid having an end surface of a side wall bonded to a first surface of the base at a bonding portion. The integrated circuit includes a first circuit and a second circuit, the first circuit includes a plurality of first circuit elements disposed in a first region ARA, and the second circuit includes a second circuit element disposed in a second region ARB. At this time, the following relations are established. { 1 - L ? 1 ? A / WX } ? 0.95 ? { 1 - L ? 2 ? A / WX } ? 0.95 ? { 1 - L ? 3 ? A / WY } ? 0.95 ? { 1 - L ? 4 ? A / WY } ? 0.95 ? { 1 - L ? 1 ? B / WX } ? 0.8 ? { 1 - L ? 2 ? B / WX } ? 0.8 ? { 1 - L ? 3 ? B / WY } ? 0.8 ? { 1 - L ? 4 ? B / WY } ? 0.

Abstract: A vibrator device includes: a base including a semiconductor substrate having an integrated circuit disposed at a second surface; a vibration element electrically coupled to the integrated circuit; and a lid having an end surface of a side wall bonded to a first surface at a bonding portion. A first circuit of the integrated circuit includes a first circuit element disposed in a first region overlapping the bonding portion in a plan view. The first circuit element is a passive element or a transistor, and ?>90° is satisfied, ? being an angle formed by the first surface and an inner side surface of the side wall.

Abstract: A resonator device includes: a base; a resonator element that includes a resonator substrate and an electrode; a conductive layer that is disposed on the base; a metal bump that is disposed between the conductive layer and the resonator element, and that electrically couples the conductive layer and the electrode while bonding the conductive layer and the resonator element; and at least one of a first low elastic modulus layer that is interposed between the base and the conductive layer, that overlaps the metal bump in a plan view of the base, and that has an elastic modulus smaller than that of the metal bump, and a second low elastic modulus layer that is interposed between the resonator substrate and the electrode, that overlaps the metal bump in the plan view of the base, and that has an elastic modulus smaller than that of the metal bump.

Abstract: The vibrator device includes a vibrator element, a relay substrate, a base, an element-side bonding member for bonding the vibrator element and the relay substrate to each other, and a base-side bonding member for bonding the base and the relay substrate to each other. Further, the element-side bonding member has a first bonding member and s second bonding member arranged side by side along an A axis. Further, an X axis of a first quartz crystal substrate provided to the vibrator element is parallel to the A axis, and a second quartz crystal substrate provided to the relay substrate is a Z-cut quartz crystal substrate.

Abstract: A method for manufacturing a vibrator includes a preparation step of preparing a quartz crystal substrate having a first surface and a second surface which are in a front and back relationship, a first film formation step of forming a first stacked body by sequentially stacking a first underlying film, a second underlying film, and a first protective film at the first surface, a first patterning step of patterning the first stacked body in a manner in which the first underlying film, the second underlying film, and the first protective film remain in a region of an element formation region other than a first groove formation region and a second groove formation region, the first underlying film and the second underlying film remain in the first groove formation region, and the first underlying film remains in the second groove formation region, and a first dry etching step of dry etching the quartz crystal substrate from the first surface through the first stacked body.

Abstract: A method for manufacturing a vibrator includes a preparation step of preparing a quartz crystal substrate having a first surface and a second surface which are in a front and back relationship, a first protective film formation step of forming a first protective film in an element formation region of the quartz crystal substrate at the first surface where the vibrator is formed; and a first dry etching step of dry etching the quartz crystal substrate from the first surface through the first protective film. R1>R2, in which R1 is a thickness of the first protective film in a first groove formation region of the quartz crystal substrate where the first groove is formed and R2 is a thickness of the first protective film in the second groove formation region where the second groove is formed.

Abstract: A method for manufacturing a vibrator includes a preparation step of preparing a quartz crystal substrate having a first surface and a second surface which are in a front and back relationship, a first protective film formation step of forming a first protective film in a region of an element formation region other than a first groove formation region and a second groove formation region when a region of the quartz crystal substrate where the vibrator is formed is referred to as the element formation region, a region where the first groove is formed is referred to as the first groove formation region, and a region where the second groove is formed is referred to as the second groove formation region, a first dry etching step of dry etching the quartz crystal substrate from the first surface through the first protective film, a second protective film formation step of forming a second protective film in the first groove formation region, and a second dry etching step of dry etching the quartz crystal substrate

Abstract: A method for manufacturing a vibrator includes a preparation step of preparing a quartz crystal substrate having a first surface and a second surface that are in a front and back relationship, a first protective film formation step of forming a first protective film in an element formation region of the first surface, the first protective film having a first opening overlapping a first groove formation region and a second opening overlapping a second groove formation region, in which a region of the quartz crystal substrate where the vibrator is formed is referred to as the element formation region, a region where the first groove is formed is referred to as the first groove formation region, and a region where the second groove is formed is referred to as the second groove formation region, and a first dry etching step of dry etching the quartz crystal substrate from the first surface through the first protective film.

Abstract: A method for manufacturing a vibrator includes a preparation step of preparing a quartz crystal substrate having a first surface and a second surface which are in a front and back relationship, a first protective film formation step of forming a first protective film in a second groove formation region when a region of the quartz crystal substrate where the vibrator is formed is referred to as an element formation region, a region where the first groove is formed is referred to as a first groove formation region, and a region where the second groove is formed is referred to as the second groove formation region, a second protective film formation step of forming, in the first groove formation region, a second protective film having a lower etching rate than the first protective film, a third protective film formation step of forming a third protective film in a region of the element formation region other than the first groove formation region and the second groove formation region, and a first dry etching st