Abstract: An etching method includes providing a substrate on a substrate support in a chamber of a plasma processing apparatus. The etching method further includes etching the substrate with plasma generated in the chamber, thereby forming a recess in the substrate. In the etching, an electrical bias is supplied to the substrate support, to attract ions from the plasma into the substrate. In the etching, at least one of a bias frequency, which is a reciprocal of a time length of a waveform cycle of the electrical bias, and a pulse duty ratio of a pulsed electrical bias is modified to maintain an ion energy flux to the substrate.

Abstract: An etching method includes: steps a), b), c), and d). Step a) provides a substrate having an underlying layer and an etching target film formed on the underlying layer, on a stage. Step b) generates plasma from a processing gas. Step c) supplies a bias power having a first frequency to the stage to etch the etching target film, thereby forming a recess. Step d) changes a frequency of the bias power to a second frequency different from the first frequency according to an aspect ratio of the recess after step c), to further etch the etching target film. After a generation of the plasma, the etching target film is continuously etched during a time period until the underlying layer is exposed.

Abstract: An etching method includes (a) providing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes (b) etching the silicon-containing film with a chemical species in plasma generated from a process gas in the chamber. The process gas contains a hydrogen fluoride gas and a phosphorus-containing gas.

Abstract: An etching method comprises (a) providing a substrate in a chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film; and (b) etching the silicon-containing film, including (b-1) etching the silicon-containing film using plasma generated from a first process gas, the first process gas containing a hydrogen fluoride gas and a reaction control gas to control a reaction between hydrogen fluoride and the silicon-containing film, the first process gas containing, as the reaction control gas, at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction, and (b-2) etching the silicon-containing film using plasma generated from a second process gas, the second process gas containing a hydrogen fluoride gas, and containing at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction.

Abstract: A substrate processing method includes providing a substrate with a silicon-containing film in a chamber, supplying a process gas containing an HF gas, a phosphorus halide gas, and at least one gas selected from the group consisting of a C4H2F6 gas, a C4H2F8 gas, a C3H2F4 gas, and a C3H2F6 gas into the chamber to generate plasma, and etching the silicon-containing film in the substrate.

Abstract: A technique increases verticality in etching. An etching method is a method for etching a target film with a plasma processing apparatus including a chamber and a substrate support located in the chamber to support a substrate, the substrate support holding a substrate that includes the target film, the target film including a patterned mask film having at least one opening. The etching method includes supplying a process gas containing an HF gas into the chamber, and etching the target film by: generating plasma from the process gas in the chamber with radio-frequency power having a first frequency, and applying a pulsed voltage periodically to the substrate support at a second frequency lower than the first frequency.

Abstract: A substrate processing method includes placing a substrate with a dielectric film on a substrate support in a chamber, and etching the dielectric film with plasm generated from a reaction gas containing an HF gas and at least one CxHyFz gas selected from the group consisting of a C4H2F6 gas, a C4H2F8 gas, a C3H2F4 gas, and a C3H2F6 gas. The etching includes setting the substrate support at a temperature of 0° C. or lower and setting the HF gas to a flow rate greater than a flow rate of the CxHyFz gas.

Abstract: An etching method enables plasma etching of a silicon-containing film with reduced lateral etching. The etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes setting a flow rate proportion of a phosphorus-containing gas with respect to a total flow rate of the process gas so as to establish a predetermined ratio of an etching rate of an alternate stack of a silicon oxide film and a silicon nitride film to an etching rate of the silicon oxide film.

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

Abstract: An etching method enables plasma etching of a silicon-containing film with reduced lateral etching. The etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes setting a flow rate proportion of a phosphorus-containing gas with respect to a total flow rate of the process gas so as to establish a predetermined ratio of an etching rate of an alternate stack of a silicon oxide film and a silicon nitride film to an etching rate of the silicon oxide film.

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

Abstract: A shower head for plasma processing includes a body part having a first surface, a second surface opposite to the first surface, and a plurality of inner side surfaces. The plurality of inner side surfaces is configured to define a plurality of gas holes penetrating through the body part from the first surface to the second surface. The second surface is made of a first corrosion-resistant material.

Abstract: A substrate processing method includes: providing a substrate including a silicon-containing film in a chamber; supplying a processing gas including HF gas into the chamber; etching the silicon-containing film with plasma generated from the processing gas, thereby forming a recess in the silicon-containing film; and controlling a partial pressure of the HF gas to decrease the partial pressure of the HF gas with an increase of an aspect ratio of the recess.

Abstract: A substrate processing method comprising: providing a substrate having a silicon-containing dielectric film in the substrate support; and generating plasma from a processing gas including a hydrogen- and fluorine-containing gas to etch the silicon-containing dielectric film, wherein the etching step comprises supplying the processing gas into the chamber, supplying a first radio-frequency signal for generating the plasma to the substrate support or the upper electrode, and supplying a first electrical bias to the upper electrode.

Abstract: An etching method includes: providing, on a stage, a substrate including an etching film containing a silicon oxide film, and a mask formed on the etching film; setting a temperature of the stage to be 0° C. or less; and generating plasma from a gas containing fluorine, nitrogen, and carbon, and having a ratio of the number of fluorine to the number of nitrogen (F/N) in a range of 0.5 to 10, thereby etching the silicon oxide film through the mask.

Abstract: An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.

Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 25 vol % of a total flow rate of the non-inert components of the first process gas.

Abstract: An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.

Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 80 vol % of a total flow rate of now-inert components of the first process gas.