Patents by Inventor Ryutaro SUDA

Ryutaro SUDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220148884
    Abstract: An etching method that is disclosed includes providing a substrate into a chamber. The substrate has a silicon-containing film including a silicon nitride film. The etching method includes generating plasma from a processing gas in the chamber to etch the silicon-containing film. The processing gas includes a fluorine-containing gas and a boron-containing gas. In the etching, a temperature of a substrate support supporting the substrate is set to a temperature of less than 0° C.
    Type: Application
    Filed: November 3, 2021
    Publication date: May 12, 2022
    Applicant: Tokyo Electron Limited
    Inventors: Takatoshi ORUI, Ryutaro SUDA, Maju TOMURA, Yoshihide KIHARA
  • Publication number: 20220093367
    Abstract: A disclosed etching method includes (a) forming a protective film on a surface in a chamber. The etching method further includes (b) etching an etch film of a substrate by using hydrogen fluoride within the chamber. The substrate includes the etch film and a mask provided on the etch film. The protective film is formed of the same type of material as a material of the mask.
    Type: Application
    Filed: September 9, 2021
    Publication date: March 24, 2022
    Applicant: Tokyo Electron Limited
    Inventors: Koki TANAKA, Ryu NAGAI, Takatoshi ORUI, Ryutaro SUDA
  • Publication number: 20220051899
    Abstract: An etching method is provided that includes: (a) providing a substrate including an etching target film on a substrate support stage arranged in a process chamber; (b) setting a temperature of the substrate support stage; (c) generating plasma from an etching gas;(d) increasing the temperature of the substrate; (e) decreasing the temperature of the substrate; and (f) repeating (d) and (e) a predetermined number of times.
    Type: Application
    Filed: August 6, 2021
    Publication date: February 17, 2022
    Inventors: Ryutaro SUDA, Maju TOMURA
  • Publication number: 20210375633
    Abstract: A substrate processing apparatus performs a method of etching a substrate that includes etching the substrate to form a first portion of a recess in the substrate, the first portion of the recess including a bottom surface and a sidewall. The method also includes forming an ammonium fluorosilicate (AFS) layer in or on the sidewall, and then etching the bottom surface to form a second portion of the recess. The etching the bottom surface is performed while maintaining protection of the sidewall with the AFS layer.
    Type: Application
    Filed: May 27, 2020
    Publication date: December 2, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Ryutaro SUDA, Kae KUMAGAI, Maju TOMURA
  • Patent number: 11171012
    Abstract: A substrate processing apparatus performs a method of etching a substrate that includes etching the substrate to form a first portion of a recess in the substrate, the first portion of the recess including a bottom surface and a sidewall. The method also includes forming an ammonium fluorosilicate (AFS) layer in or on the sidewall, and then etching the bottom surface to form a second portion of the recess. The etching the bottom surface is performed while maintaining protection of the sidewall with the AFS layer.
    Type: Grant
    Filed: May 27, 2020
    Date of Patent: November 9, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Ryutaro Suda, Kae Kumagai, Maju Tomura
  • Publication number: 20210343539
    Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes providing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes controlling a temperature of a substrate support on which the substrate is placed to 0° C. or lower. The substrate processing method further includes etching the silicon-containing film with plasma generated from a first process gas containing a hydrogen fluoride gas and at least one carbon-containing gas selected from the group consisting of a fluorocarbon gas and a hydrofluorocarbon gas. The etching includes etching the film with a chemical species contained in the plasma. The hydrogen fluoride gas has a highest flow rate among non-inert components of the first process gas.
    Type: Application
    Filed: April 30, 2021
    Publication date: November 4, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Ryutaro SUDA, Maju TOMURA
  • Patent number: 11094550
    Abstract: An etching method include: etching a silicon-containing film or a metal-containing film formed on a substrate; and heating the substrate by temporarily irradiating the substrate with electromagnetic waves during the etching.
    Type: Grant
    Filed: January 16, 2020
    Date of Patent: August 17, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Sho Kumakura, Ryutaro Suda
  • Publication number: 20210202261
    Abstract: An etching method includes: providing, on a stage, a substrate including an etching film containing a silicon oxide film, and a mask formed on the etching film; setting a temperature of the stage to be 0° C. or less; and generating plasma from a gas containing fluorine, nitrogen, and carbon, and having a ratio of the number of fluorine to the number of nitrogen (F/N) in a range of 0.5 to 10, thereby etching the silicon oxide film through the mask.
    Type: Application
    Filed: December 22, 2020
    Publication date: July 1, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Ryutaro SUDA, Maju TOMURA
  • Publication number: 20210159089
    Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 80 vol % of a total flow rate of non-inert components of the first process gas.
    Type: Application
    Filed: November 9, 2020
    Publication date: May 27, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Ryutaro SUDA, Maju TOMURA
  • Publication number: 20210159085
    Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 25 vol % of a total flow rate of the non-inert components of the first process gas.
    Type: Application
    Filed: November 9, 2020
    Publication date: May 27, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Ryutaro SUDA, Maju TOMURA
  • Publication number: 20210143028
    Abstract: An etching method enables plasma etching of a silicon-containing film with reduced lateral etching. The etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes setting a flow rate proportion of a phosphorus-containing gas with respect to a total flow rate of the process gas so as to establish a predetermined ratio of an etching rate of an alternate stack of a silicon oxide film and a silicon nitride film to an etching rate of the silicon oxide film.
    Type: Application
    Filed: November 6, 2020
    Publication date: May 13, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Takahiro YOKOYAMA, Maju TOMURA, Yoshihide KIHARA, Ryutaro SUDA, Takatoshi ORUI
  • Publication number: 20210143016
    Abstract: An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.
    Type: Application
    Filed: July 16, 2020
    Publication date: May 13, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Takahiro YOKOYAMA, Maju TOMURA, Yoshihide KIHARA, Ryutaro SUDA, Takatoshi ORUI
  • Publication number: 20200234963
    Abstract: An etching method include: etching a silicon-containing film or a metal-containing film formed on a substrate; and heating the substrate by temporarily irradiating the substrate with electromagnetic waves during the etching.
    Type: Application
    Filed: January 16, 2020
    Publication date: July 23, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Sho KUMAKURA, Ryutaro SUDA