Patents by Inventor Ryuuji UMEMOTO

Ryuuji UMEMOTO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11362207
    Abstract: A semiconductor device according to an embodiment comprises: a cell portion in which a vertical type MOSFET is formed; and a termination portion arranged adjacent to the cell portion. The termination portion includes a connection trench gate provided along a first direction. The cell portion includes: a plurality of first column regions provided along a second direction intersecting the first direction; and a plurality of trench gates provided along the second direction such that two trench gates are arranged between the two adjacent first column regions. The plurality of trench gates extend from the cell portion to the termination portion and are connected to the connection trench gate. The plurality of first column regions extend from the cell portion to the termination portion, and the termination portion includes a plurality of second column regions different from the plurality of first column regions.
    Type: Grant
    Filed: November 11, 2020
    Date of Patent: June 14, 2022
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Atsushi Sakai, Satoru Tokuda, Ryuuji Umemoto, Katsumi Eikyu, Hiroshi Yanagigawa
  • Publication number: 20210159331
    Abstract: A semiconductor device according to an embodiment comprises: a cell portion in which a vertical type MOSFET is formed; and a termination portion arranged adjacent to the cell portion. The termination portion includes a connection trench gate provided along a first direction. The cell portion includes: a plurality of first column regions provided along a second direction intersecting the first direction; and a plurality of trench gates provided along the second direction such that two trench gates are arranged between the two adjacent first column regions. The plurality of trench gates extend from the cell portion to the termination portion and are connected to the connection trench gate. The plurality of first column regions extend from the cell portion to the termination portion, and the termination portion includes a plurality of second column regions different from the plurality of first column regions.
    Type: Application
    Filed: November 11, 2020
    Publication date: May 27, 2021
    Inventors: Atsushi SAKAI, Satoru TOKUDA, Ryuuji UMEMOTO, Katsumi EIKYU, Hiroshi YANAGIGAWA