Abstract: A preferred aspect of the present invention is a fuel cell stack provided with a plurality of fuel cells each including a solid electrolyte layer and first and second electrode layers formed across the solid electrolyte layer. The fuel cells are stacked with the first or second electrode layers of adjacent cells facing each other. A common flow path for supplying a first gas to both of the first electrode layers facing each other is formed in an area where the first electrode layers face each other. A common flow path for supplying a second gas to both of the second electrode layers facing each other is formed in an area where the second electrode layers face each other. A connection electrode is formed at the end of the fuel cell. At least some of the stacked cells are connected in series via the connection electrode.

Abstract: An object of the present invention is to provide a fuel cell that obtains high output density and prevents stress application to the cell during stack assembling and breakage. The fuel cell is equipped with a unit cell including a structure in which an electrolyte layer is sandwiched between an anode electrode layer and a cathode electrode layer. The unit cell is disposed between a first member and a second member. An intermediate substrate is disposed between the first member and the second member. The unit cell is supported at the outer peripheral portion thereof by the intermediate substrate. The width of the electrolyte layer is the maximum width or less of a hollow portion formed between at least one of the first member and the second member and the unit cell.

Abstract: Dielectric breakdown resistance of a power module including a SiC-IGBT and a SiC diode is improved. The power module includes a SiC-IGBT 110 and a SiC diode 111, and a film thickness of a resin layer 323 covering an upper portion of an electric field relaxation region 320 of the SiC-IGBT 110 is larger than a chip thickness of the SiC-IGBT 110, that is, for example, 200 ?m or more.

Abstract: Dielectric breakdown resistance of a power module including a SiC-IGBT and a SiC diode is improved. The power module includes a SiC-IGBT 110 and a SiC diode 111, and a film thickness of a resin layer 323 covering an upper portion of an electric field relaxation region 320 of the SiC-IGBT 110 is larger than a chip thickness of the SiC-IGBT 110, that is, for example, 200 ?m or more.

Abstract: An object of the present invention is to increase the reliability of a power module and a power converter and to extend their life. In order to achieve this, a power module includes: two switching devices each including a diode and a transistor, the two switching devices being electrically connected in parallel; and an insulating substrate on which the two switching devices are mounted. Further, a gate electrode of MOFET that each of the two switching device has is electrically connected to a gate resistance. Further, of the two switching devices, the gate resistance that is electrically connected to the switching device, whose current value is smaller when a predetermined voltage is applied in the forward direction of the body diode, is greater than the gate resistance that is electrically connected to the switching device whose current value is larger.

Abstract: A gate drive circuit to prevent a false turn-on phenomenon includes a first, second, third and fourth switching element, and a capacitor. A source of the first switching element is connected to a first voltage, and a drain of the same is connected to the main switching element's gate electrode. A source of the second switching element is connected to a second voltage, and a drain of the same is connected to the gate electrode. A source of the third switching element is connected to the first voltage, and a drain of the same is connected to a first electrode of the capacitor. A source of the fourth switching element is connected to the second voltage, and a drain of the same is connected to the first electrode and to the drain of the third switching element. A second electrode of the capacitor is connected to the gate electrode.

Abstract: Provided is a silicon carbide semiconductor device in which SiC-MOSFETs are formed within an active region of an n-type silicon carbide semiconductor substrate, and a p+-type semiconductor region is formed on an upper surface of an epitaxial layer so as to surround the active region.

Abstract: An object of the present invention is to increase the reliability of a power module and a power converter and to extend their life. In order to achieve this, a power module includes: two switching devices each including a diode and a transistor, the two switching devices being electrically connected in parallel; and an insulating substrate on which the two switching devices are mounted. Further, a gate electrode of MOFET that each of the two switching device has is electrically connected to a gate resistance. Further, of the two switching devices, the gate resistance that is electrically connected to the switching device, whose current value is smaller when a predetermined voltage is applied in the forward direction of the body diode, is greater than the gate resistance that is electrically connected to the switching device whose current value is larger.

Abstract: Provided is a silicon carbide semiconductor device in which SiC-MOSFETs are formed within an active region of an n-type silicon carbide semiconductor substrate, and a p+-type semiconductor region is formed on an upper surface of an epitaxial layer so as to surround the active region.

Abstract: A gate drive circuit to prevent a false turn-on phenomenon includes a first, second, third and fourth switching element, and a capacitor. A source of the first switching element is connected to a first voltage, and a drain of the same is connected to the main switching element's gate electrode. A source of the second switching element is connected to a second voltage, and a drain of the same is connected to the gate electrode. A source of the third switching element is connected to the first voltage, and a drain of the same is connected to a first electrode of the capacitor. A source of the fourth switching element is connected to the second voltage, and a drain of the same is connected to the first electrode and to the drain of the third switching element. A second electrode of the capacitor is connected to the gate electrode.

Abstract: The object of the present invention is to compensate for a difference in threshold voltage between a plurality of switching devices incorporated in a power module. The present invention solves the subject described above by mounting a switching device having a high threshold voltage in comparison with a different switching device at a location at which the temperature of the power module during operation is higher than that at another location at which the different switching device is mounted. Eventually, a power conversion apparatus of a high performance and a vehicle drive apparatus of a high performance can be provided.

Abstract: The object of the present invention is to compensate for a difference in threshold voltage between a plurality of switching devices incorporated in a power module. The present invention solves the subject described above by mounting a switching device having a high threshold voltage in comparison with a different switching device at a location at which the temperature of the power module during operation is higher than that at another location at which the different switching device is mounted. Eventually, a power conversion apparatus of a high performance and a vehicle drive apparatus of a high performance can be provided.