Patents by Inventor Sabina Centazzo

Sabina Centazzo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8885413
    Abstract: Systems and techniques for performing write operations on non-volatile memory are described. A described system includes a memory structure including non-volatile memory cells that are arranged on word lines and bit lines and a microcontroller that is communicatively coupled with the memory structure. The memory structure can include non-volatile memory cells that are arranged on word lines and bit lines. The microcontroller can be configured to receive data to write to the memory structure, write the data to the memory structure using a selected word line of the word lines, detect a failure to write the data, apply, based on the failure, a negative bias voltage to one or more unselected word lines of the word lines during a negative bias period, and write the data to the portion of the memory cells using the selected word line during the negative bias period.
    Type: Grant
    Filed: March 20, 2012
    Date of Patent: November 11, 2014
    Assignee: Atmel Corporation
    Inventors: Danut Manea, Erwin Castillon, Uday Mudumba, Sabina Centazzo, Stephen Trinh, Dixie Nguyen
  • Publication number: 20130250692
    Abstract: Systems and techniques for performing write operations on non-volatile memory are described. A described system includes a memory structure including non-volatile memory cells that are arranged on word lines and bit lines and a microcontroller that is communicatively coupled with the memory structure. The memory structure can include non-volatile memory cells that are arranged on word lines and bit lines. The microcontroller can be configured to receive data to write to the memory structure, write the data to the memory structure using a selected word line of the word lines, detect a failure to write the data, apply, based on the failure, a negative bias voltage to one or more unselected word lines of the word lines during a negative bias period, and write the data to the portion of the memory cells using the selected word line during the negative bias period.
    Type: Application
    Filed: March 20, 2012
    Publication date: September 26, 2013
    Applicant: ATMEL CORPORATION
    Inventors: Danut Manea, Erwin Castillon, Uday Mudumba, Sabina Centazzo, Stephen Trinh, Dixie Nguyen