Abstract: A disclosed setting method includes: in response to an instruction to replace a first component with a second component, determining whether or not data that correlates a surface of the first component with a surface of a third component has been set; upon determining that the data that correlates the surface of the first component with the surface of the third component has been set, extracting a surface of the second component, which corresponds to the surface of the first component; and correlating the extracted surface of the second component with the surface of the third component instead of the surface of the first component in the data.

Abstract: A mesh number prediction method obtains a mesh length for a case in which a mesh having an arbitrary shape is created by approximating an entire analyzing target by a three-dimensional (3D) mesh model based on data of a 3D surface model of the analyzing target, obtains a mesh number of each part forming the analyzing target for a case in which a mesh having an arbitrary shape is created by approximating each part by a 3D mesh model based on the mesh length, and obtains a predicted total mesh number of the entire analyzing target from a ratio of volumes of the entire analyzing target and each part based on the mesh number.

Abstract: A contact defining device includes: a component moving unit that moves a component represented by data of a surface region in a 3D model in a predetermined direction; an overlap determination unit that determines whether or not the surface region of the component moved by the component moving unit includes an overlapping area that overlaps the surface region of another component; and a contact defining unit that, when a determination is made by the overlap determination unit that the surface region of the component includes the overlapping area that overlaps the surface region of another component, defines the overlapping area as a contact area with the another component.

Abstract: A disclosed setting method includes: in response to an instruction to replace a first component with a second component, determining whether or not data that correlates a surface of the first component with a surface of a third component has been set; upon determining that the data that correlates the surface of the first component with the surface of the third component has been set, extracting a surface of the second component, which corresponds to the surface of the first component; and correlating the extracted surface of the second component with the surface of the third component instead of the surface of the first component in the data.

Abstract: A mesh number prediction method obtains a mesh length for a case in which a mesh having an arbitrary shape is created by approximating an entire analyzing target by a three-dimensional (3D) mesh model based on data of a 3D surface model of the analyzing target, obtains a mesh number of each part forming the analyzing target for a case in which a mesh having an arbitrary shape is created by approximating each part by a 3D mesh model based on the mesh length, and obtains a predicted total mesh number of the entire analyzing target from a ratio of volumes of the entire analyzing target and each part based on the mesh number.

Abstract: A contact defining device includes: a component moving unit that moves a component represented by data of a surface region in a 3D model in a predetermined direction; an overlap determination unit that determines whether or not the surface region of the component moved by the component moving unit includes an overlapping area that overlaps the surface region of another component; and a contact defining unit that, when a determination is made by the overlap determination unit that the surface region of the component includes the overlapping area that overlaps the surface region of another component, defines the overlapping area as a contact area with the another component.

Abstract: A magnetoresistive element is located between a lower shielding layer and an upper shielding layer. The magnetoresistive element receives an electric current through the lower shielding layer and the upper shielding layer. A non-magnetic conductive layer is embedded in the insulating film between the slider body and the lower shielding layer. An air layer is formed between the head slider and a storage medium. Capacitive coupling is established between the head slider and the storage medium. The capacitive coupling allows transmission of the noise from the storage medium to the slider body. The noise affects capacitance established between the lower shielding layer and the slider body. The non-magnetic conductive layer serves to prevent variation in a potential difference resulting from transmission of the noise between the lower shielding layer and the upper shielding layer.

Abstract: According to the present invention an S-parameter file input section inputs S-parameters for each device constituting a system subject to a transmission analysis, a port position correspondence conversion section converts the input S-parameters so as to correspond to preset port positions to be connected, an S-parameter/T-parameter conversion section converts S-parameters to T-parameters, a connection calculation section carries out a connection calculation of T-parameters to obtain T-parameters of the entire system, a T-parameter/S-parameter conversion section converts T-parameters of the entire system to S-parameters of the entire system and an S-parameter file output section outputs S-parameters of the entire system.

Abstract: The present invention obtains a plurality of existing parameters each with a different frequency, select a frequency whose parameter should be calculated and calculates a parameter in the selected frequency, using the plurality of obtained existing parameters with different frequencies. Thus, at least one of the parameter of a frequency not prepared in a circuit and a parameter which a circuit obtained by connecting a plurality of such circuits or by connecting a plurality of types of circuits should be prepared is newly generated.

Abstract: According to the present invention an S-parameter file input section inputs S-parameters for each device constituting a system subject to a transmission analysis, a port position correspondence conversion section converts the input S-parameters so as to correspond to preset port positions to be connected, an S-parameter/T-parameter conversion section converts S-parameters to T-parameters, a connection calculation section carries out a connection calculation of T-parameters to obtain T-parameters of the entire system, a T-parameter/S-parameter conversion section converts T-parameters of the entire system to S-parameters of the entire system and an S-parameter file output section outputs S-parameters of the entire system.

Abstract: In order to etch an object to be processed, such as a semiconductor wafer, the object to be processed is placed in a vacuum processing chamber, an etching gas is introduced into the vacuum processing chamber, and electrical power is applied to a pair of electrodes within the vacuum processing chamber by a high-frequency electrical power source. A mixed gas of carbon monoxide and a gas which does not contain hydrogen and which contains at least one element from the group IV elements and at least one element from group VII elements is used as the etching gas. A halogenated carbon gas, typically a fluorocarbon such as C.sub.4 F.sub.8, is used as the gas containing elements from the group IV and group VII elements. The concentration of carbon monoxide in the etching gas could be 50% or more. At least approximately 86% of an inert gas, such as argon, xenon, krypton, or N.sub.2 and O.sub.2 could be added to the etching gas.

Abstract: An etching method comprising the steps of forming an etched layer on a wafer and covering the etched layer with an anti-reflection cover and then the anti-reflection cover with a photoresist film, pattern-exposing the photoresist film, developing the exposed photoresist film to form pattern openings in each of which the anti-reflection cover is exposed, and carrying the wafer into a chamber, exhausting the chamber to decompressed atmosphere, and introducing a mixed gas of C.sub.4 F.sub.8 gas and at least one of O.sub.2 and N.sub.2 gases into the process chamber to generate plasma of this mixed gas and act active species in this plasma on the wafer, whereby the anti-reflection cover which is exposed in each of the pattern openings is etched and the etched layer is then etched without etching the photoresist film formed on an inner surface each pattern opening.