Abstract: In an FET amplifier comprising a series connection of a coaxial-to-waveguide converter and a circulator for supplying an FET with an input signal of a wide microwave band, such as an octave band between about 1 GHz and 12 GHz, a d.c. bias voltage is applied to the FET through the circulator from a terminator therefor. For this purpose, the terminator comprises an inner and an outer conductor insulated ohmically from each other and shunted for the microwave band, as by a capacitor of several picofarads. Preferably, a resistor and a third conductor are successively connected to the inner conductor with the capacitor placed at an end of the resistor remoter from the inner conductor and with a dummy for the input signal positioned between the outer and the third conductors.