Patents by Inventor Sadao Nakashima

Sadao Nakashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9074284
    Abstract: Provided is a heat treatment apparatus that can form films having a uniform thickness on a plurality of substrates. The heat treatment apparatus comprises a process chamber configured to grow silicon carbide (SiC) films on wafers, a boat configured to hold a plurality of wafers in a state where the wafers are vertically arranged and approximately horizontally oriented so as to hold the wafers in the process chamber, a heating unit installed in the process chamber, and a gas supply nozzle configured to supply a reaction gas. The heating unit comprises a susceptor configured to cover at least a part of the boat, and a susceptor wall disposed between the boat and the susceptor.
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: July 7, 2015
    Assignee: HITACHI KOKUSAI ELECTRIC, INC.
    Inventors: Masanao Fukuda, Kenji Shirako, Akihiro Sato, Kazuhiro Morimitsu, Sadao Nakashima
  • Patent number: 8889533
    Abstract: A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.
    Type: Grant
    Filed: February 22, 2011
    Date of Patent: November 18, 2014
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Takafumi Sasaki, Yoshinori Imai, Koei Kuribayashi, Sadao Nakashima
  • Patent number: 8679989
    Abstract: A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type betwee
    Type: Grant
    Filed: March 27, 2007
    Date of Patent: March 25, 2014
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Sadao Nakashima, Takahiro Maeda, Kiyohiko Maeda, Kenji Kameda, Yushin Takasawa
  • Patent number: 8450220
    Abstract: There are provided a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing a substrate, for growing a SiC epitaxial film at a high-temperature condition. The substrate processing apparatus comprises: a reaction chamber; a first gas supply system configured to supply at least a gas containing silicon atoms and a gas containing chlorine atoms, or a gas containing silicon and chlorine atoms; a second gas supply system configured to supply at least a reducing gas; a third gas supply system configured to supply at least a gas containing carbon atoms; a first gas supply nozzle connected to the first gas supply system or the first and third gas supply systems; a second gas supply nozzle connected to the second gas supply system or the second and third gas supply systems; and a controller configured to control the first to third gas supply systems.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: May 28, 2013
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Takafumi Sasaki, Sadao Nakashima, Yoshinori Imai, Koei Kuribayashi
  • Patent number: 8409352
    Abstract: An apparatus including a reaction chamber in which substrates are stacked; a first gas supply nozzle installed in a region in which the substrates are stacked; a second gas supply nozzle installed in a different position; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the substrates, a line of which is branched in a direction of the second gas supply nozzle, and including a first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the substrates, a line of which is branched in a direction of the first gas supply nozzle, and including a second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the substrates are stacked.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: April 2, 2013
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Koei Kuribayashi, Yoshinori Imai, Sadao Nakashima, Takafumi Sasaki
  • Publication number: 20120315767
    Abstract: A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.
    Type: Application
    Filed: February 22, 2011
    Publication date: December 13, 2012
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takafumi Sasaki, Yoshinori Imai, Koei Kuribayashi, Sadao Nakashima
  • Patent number: 8246749
    Abstract: Disclosed is a substrate processing apparatus, including a reaction tube to process a substrate therein, wherein the reaction tube includes an outer tube, an inner tube disposed inside the outer tube, and a support section to support the inner tube, the inner tube and the support section are made of quartz or silicon carbide, and a shock-absorbing member is provided between the support section and the inner tube.
    Type: Grant
    Filed: July 20, 2006
    Date of Patent: August 21, 2012
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Jie Wang, Ryuji Yamamoto, Sadao Nakashima
  • Publication number: 20110212599
    Abstract: Provided is a method of manufacturing a semiconductor device using a substrate processing apparatus including a reaction chamber in which a plurality of substrates are stacked at a predetermined distance; a first gas supply nozzle installed to extend to a region in which the plurality of substrates are stacked; a second gas supply nozzle installed to extend to a different position from a position at which the first gas supply nozzle is installed in the region in which the plurality of substrates are stacked; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the second gas supply nozzle, and including at least one first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the first gas supply nozzle, a
    Type: Application
    Filed: February 28, 2011
    Publication date: September 1, 2011
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Koei Kuribayashi, Yoshinori Imai, Sadao Nakashima, Takafumi Sasaki
  • Patent number: 7901206
    Abstract: A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.
    Type: Grant
    Filed: March 27, 2006
    Date of Patent: March 8, 2011
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Akira Morohashi, Iwao Nakamura, Ryota Sasajima, Keishin Yamazaki, Sadao Nakashima
  • Patent number: 7865070
    Abstract: To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing. The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 ?m to 1,000 ?m. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.
    Type: Grant
    Filed: March 22, 2005
    Date of Patent: January 4, 2011
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Iwao Nakamura, Naoto Nakamura, Sadao Nakashima
  • Publication number: 20100330781
    Abstract: There are provided a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing a substrate, for growing a SiC epitaxial film at a high-temperature condition. The substrate processing apparatus comprises: a reaction chamber; a first gas supply system configured to supply at least a gas containing silicon atoms and a gas containing chlorine atoms, or a gas containing silicon and chlorine atoms; a second gas supply system configured to supply at least a reducing gas; a third gas supply system configured to supply at least a gas containing carbon atoms; a first gas supply nozzle connected to the first gas supply system or the first and third gas supply systems; a second gas supply nozzle connected to the second gas supply system or the second and third gas supply systems; and a controller configured to control the first to third gas supply systems.
    Type: Application
    Filed: June 28, 2010
    Publication date: December 30, 2010
    Applicant: HITACHI-KOKUSAI ELECTRIC INC.
    Inventors: Takafumi SASAKI, Sadao NAKASHIMA, Yoshinori IMAI, Koei KURIBAYASHI
  • Publication number: 20100275848
    Abstract: Provided is a heat treatment apparatus that can form films having a uniform thickness on a plurality of substrates. The heat treatment apparatus comprises a process chamber configured to grow silicon carbide (SiC) films on wafers, a boat configured to hold a plurality of wafers in a state where the wafers are vertically arranged and approximately horizontally oriented so as to hold the wafers in the process chamber, a heating unit installed in the processing chamber, and a gas supply nozzle configured to supply a reaction gas. The heating unit comprises a susceptor configured to cover at least a part of the boat, and a susceptor wall disposed between the boat and the susceptor.
    Type: Application
    Filed: April 27, 2010
    Publication date: November 4, 2010
    Applicant: HITACHI-KOKUSAI ELECTRIC INC.
    Inventors: Masanao Fukuda, Kenji Shirako, Akihiro Sato, Kazuhiro Morimitsu, Sadao Nakashima
  • Publication number: 20100148415
    Abstract: A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support is formed from a main body portion and a supporting portion. In the main body portion, a plurality of placing portions extend parallel, and supporting portions are provided on the placing portions. A substrate is placed on the supporting portion. The supporting portion has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion.
    Type: Application
    Filed: January 6, 2010
    Publication date: June 17, 2010
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Naoto Nakamura, Iwao Nakamura, Tomoharu Shimada, Kenichi Ishiguro, Sadao Nakashima
  • Patent number: 7667301
    Abstract: A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
    Type: Grant
    Filed: September 26, 2003
    Date of Patent: February 23, 2010
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Naoto Nakamura, Iwao Nakamura, Tomoharu Shimada, Kenichi Ishiguro, Sadao Nakashima
  • Publication number: 20090311873
    Abstract: Disclosed is a substrate processing apparatus, including a reaction tube to process a substrate therein, wherein the reaction tube includes an outer tube, an inner tube disposed inside the outer tube, and a support section to support the inner tube, the inner tube and the support section are made of quartz or silicon carbide, and a shock-absorbing member is provided between the support section and the inner tube.
    Type: Application
    Filed: July 20, 2006
    Publication date: December 17, 2009
    Applicant: HITACHI KOKUSAI ELECTRIC, INC.
    Inventors: Jie Wang, Ryuji Yamamoto, Sadao Nakashima
  • Publication number: 20090305517
    Abstract: A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type betwee
    Type: Application
    Filed: March 27, 2007
    Publication date: December 10, 2009
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Sadao Nakashima, Takahiro Maeda, Kiyohiko Maeda, Kenji Kameda, Yushin Takasawa
  • Publication number: 20090186489
    Abstract: A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
    Type: Application
    Filed: March 16, 2009
    Publication date: July 23, 2009
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Naoto Nakamura, Iwao Nakamura, Tomoharu Shimada, Kenichi Ishiguro, Sadao Nakashima
  • Publication number: 20090061651
    Abstract: A substrate processing apparatus comprising: a reaction tube that processes a substrate; a support portion that supports the substrate in the reaction tube; a process gas supply line that supplies a process gas into the reaction tube; and an exhaust line that exhausts an inside of the reaction tube, wherein the process gas is supplied into the reaction tube to form a silicon nitride film on the substrate, at least the reaction tube is made of quartz, a plurality of projections are provided on the inner wall of the reaction tube, and the diameter of the projections is larger than 2 ?m but smaller than 86 ?m.
    Type: Application
    Filed: September 3, 2008
    Publication date: March 5, 2009
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Sadao Nakashima, Takahiro Maeda, Jie Wang
  • Publication number: 20090016854
    Abstract: A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.
    Type: Application
    Filed: March 27, 2006
    Publication date: January 15, 2009
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Akira Morohashi, Iwao Nakamura, Ryota Sasajima, Keishin Yamazaki, Sadao Nakashima
  • Publication number: 20080268644
    Abstract: There are provided the steps of loading a substrate into a reaction vessel; forming a film on the substrate while supplying a film forming gas into the reaction vessel; unloading the substrate after film formation from the reaction vessel; supplying a cleaning gas into the reaction vessel while lowering a temperature in the reaction vessel and removing a deposit deposited on at least an inner wall of the reaction vessel in the film forming step.
    Type: Application
    Filed: February 5, 2008
    Publication date: October 30, 2008
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kenji Kameda, Naonori Akae, Kenichi Suzaki, Yushin Takasawa, Sadao Nakashima