Patents by Inventor Sadayoshi Horii
Sadayoshi Horii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240096615Abstract: Described herein is a technique capable of acquiring, monitoring, and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.Type: ApplicationFiled: December 1, 2023Publication date: March 21, 2024Applicant: Kokusai Electric CorporationInventors: Akinori TANAKA, Hideto TATENO, Sadayoshi HORII
-
Patent number: 11869764Abstract: Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.Type: GrantFiled: September 13, 2022Date of Patent: January 9, 2024Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Akinori Tanaka, Hideto Tateno, Sadayoshi Horii
-
Publication number: 20230294145Abstract: A gas cleaning method includes: (a) removing a first metal element as one of contaminants from a process chamber by supplying a chlorine-containing gas into the process chamber without supplying an oxygen-containing gas; and (b) removing a second metal element as another one of the contaminants from the process chamber by supplying the oxygen-containing gas into the process chamber, wherein (b) is performed after (a).Type: ApplicationFiled: February 1, 2023Publication date: September 21, 2023Applicant: Kokusai Electric CorporationInventors: Takahiro KOBAYASHI, Iwao NAKAMURA, Toru HARADA, Hisashi NOMURA, Sadayoshi HORII
-
Publication number: 20230227979Abstract: There is provided a technique that includes: a first nozzle arranged to correspond to a first region where a plurality of product substrates are arranged in a substrate arrangement region where a plurality of substrates are arranged in a reaction tube, the first nozzle supplying a hydrogen-containing gas into the reaction tube; a second nozzle arranged to correspond to the first region and supplying an oxygen-containing gas into the reaction tube; a third nozzle arranged closer to the bottom opening than the first region to correspond to a second region where a dummy substrate or a heat insulator or both is arranged, the third nozzle supplying a dilution gas into the reaction tube; and a controller configured to be capable of controlling the hydrogen-containing gas and the dilution gas so that a concentration of the hydrogen-containing gas in the second region is lower than that in the first region.Type: ApplicationFiled: March 20, 2023Publication date: July 20, 2023Applicant: Kokusai Electric CorporationInventors: Takafumi SASAKI, Sadayoshi Horii, Mika Urushihara
-
Publication number: 20230077197Abstract: Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.Type: ApplicationFiled: September 13, 2022Publication date: March 9, 2023Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Akinori TANAKA, Hideto TATENO, Sadayoshi HORII
-
Patent number: 11476112Abstract: Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.Type: GrantFiled: March 12, 2018Date of Patent: October 18, 2022Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Akinori Tanaka, Hideto Tateno, Sadayoshi Horii
-
Patent number: 11168396Abstract: There is provided a technique that includes a first act of modifying a film containing a silazane bond by heating a substrate, in which the film containing the silazane bond is formed over a surface of the substrate, to a first temperature and by supplying a first processing gas containing hydrogen peroxide to the substrate; and after the first act, a second act of modifying the film containing the silazane bond by heating the substrate to a second temperature higher than the first temperature and by supplying a second processing gas containing hydrogen peroxide to the substrate.Type: GrantFiled: September 13, 2019Date of Patent: November 9, 2021Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Toru Kakuda, Masahisa Okuno, Katsuhiko Yamamoto, Takuya Joda, Sadayoshi Horii
-
Patent number: 10985017Abstract: Described herein is a technique capable of improving a quality of a substrate processing performed using hydrogen peroxide. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and (b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).Type: GrantFiled: February 26, 2019Date of Patent: April 20, 2021Assignee: Kokusai Electric CorporationInventors: Katsuhiko Yamamoto, Takuya Joda, Toru Kakuda, Sadayoshi Horii
-
Patent number: 10604839Abstract: A substrate processing apparatus, including: a processing chamber having a first and a second processing regions; a substrate mounting table rotatably installed in the processing chamber on which a substrate is mounted, and a rotation instrument configured to rotate the substrate mounting table such that the substrate passes through the first processing region and the second processing region in this order, at least one of the first and the second processing regions including: a gas supply part including a line-shaped opening portion extending in a radial direction of the substrate mounting table and configured to supply a gas from the opening portion into the region; and a gap holding member protruding from a ceiling of the processing chamber opposing the substrate, around the opening portion, toward the substrate such that a space on the substrate has a predetermined gap to serve as a passage of the supplied gas.Type: GrantFiled: August 14, 2015Date of Patent: March 31, 2020Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Tetsuaki Inada, Yuichi Wada, Mitsunori Ishisaka, Mitsuhiro Hirano, Sadayoshi Horii, Hideharu Itatani, Satoshi Takano, Motonari Takebayashi
-
Publication number: 20200002816Abstract: There is provided a technique that includes a first act of modifying a film containing a silazane bond by heating a substrate, in which the film containing the silazane bond is formed over a surface of the substrate, to a first temperature and by supplying a first processing gas containing hydrogen peroxide to the substrate; and after the first act, a second act of modifying the film containing the silazane bond by heating the substrate to a second temperature higher than the first temperature and by supplying a second processing gas containing hydrogen peroxide to the substrate.Type: ApplicationFiled: September 13, 2019Publication date: January 2, 2020Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Toru KAKUDA, Masahisa OKUNO, Katsuhiko YAMAMOTO, Takuya JODA, Sadayoshi HORII
-
Publication number: 20190304778Abstract: Described herein is a technique capable of improving a quality of a substrate processing performed using hydrogen peroxide. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and (b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).Type: ApplicationFiled: February 26, 2019Publication date: October 3, 2019Inventors: Katsuhiko YAMAMOTO, Takuya JODA, Toru KAKUDA, Sadayoshi HORII
-
Publication number: 20190003047Abstract: Described herein is a technique capable of preventing an occurrence of the metal contamination in a vaporizer for vaporizing a liquid source. According to the technique described herein, there is provided a vaporizer including: a vaporization vessel constituted by a quartz body; and an atomizer made of a fluorine resin and configured to atomize a liquid source using a carrier gas (atomization gas) and to supply the atomized liquid source into the vaporization vessel.Type: ApplicationFiled: September 7, 2018Publication date: January 3, 2019Inventors: Hideto TATENO, Akinori TANAKA, Daisuke HARA, Masahisa OKUNO, Takuya JODA, Takashi TSUKAMOTO, Sadayoshi HORII, Toru KAKUDA
-
Publication number: 20180204720Abstract: Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.Type: ApplicationFiled: March 12, 2018Publication date: July 19, 2018Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Akinori TANAKA, Hideto TATENO, Sadayoshi HORII
-
Publication number: 20180204742Abstract: A substrate processing apparatus, includes: a process chamber accommodating a substrate; a vaporizer vaporizing a liquid precursor to generate reaction gas and deliver a processing gas containing the reaction gas and a carrier gas, the vaporizer including: a vaporization vessel; and a heater heating the liquid precursor introduced into the vessel; a carrier gas flow rate controller controlling flow rate of the carrier gas supplied to the vaporizer; a liquid precursor flow rate controller controlling flow rate of the liquid precursor; a processing gas supply pipe introducing the processing gas delivered from the vaporizer into the process chamber; and a gas concentration sensor detecting a gas concentration of the reaction gas contained in the processing gas delivered from the vaporizer into the processing gas supply pipe.Type: ApplicationFiled: March 13, 2018Publication date: July 19, 2018Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Hideto TATENO, Daisuke HARA, Masahisa OKUNO, Takuya JODA, Takashi TSUKAMOTO, Akinori TANAKA, Toru KAKUDA, Sadayoshi HORII
-
Patent number: 9653301Abstract: Provided is a semiconductor device including a metal film which can be formed with lower costs but still manage to have a necessary work function and oxidation resistance. The semiconductor device includes an insulating film disposed on a substrate; and a metal film disposed on the insulating film. The metal film includes a stacked structure of: a first metal film disposed on the insulating film to directly contact the insulating film; a second metal film disposed on the first metal film to directly contact the first metal film; and the first metal film disposed on the second metal film to directly contact the second metal film, the second metal film having a work function greater than 4.8 eV and being different from the first metal film in material, wherein an oxidation resistance of the first metal film is greater than that of the second metal film.Type: GrantFiled: August 4, 2016Date of Patent: May 16, 2017Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Sadayoshi Horii, Arito Ogawa, Hideharu Itatani
-
Publication number: 20160343573Abstract: Provided is a semiconductor device including a metal film which can be formed with lower costs but still manage to have a necessary work function and oxidation resistance. The semiconductor device includes an insulating film disposed on a substrate; and a metal film disposed on the insulating film. The metal film includes a stacked structure of: a first metal film disposed on the insulating film to directly contact the insulating film; a second metal film disposed on the first metal film to directly contact the first metal film; and the first metal film disposed on the second metal film to directly contact the second metal film, the second metal film having a work function greater than 4.8 eV and being different from the first metal film in material, wherein an oxidation resistance of the first metal film is greater than that of the second metal film.Type: ApplicationFiled: August 4, 2016Publication date: November 24, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Sadayoshi HORII, Arito OGAWA, Hideharu ITATANI
-
Patent number: 9472637Abstract: Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes: an insulating film disposed on a substrate; and a metal film disposed on the insulating film to directly contact the insulating film, the metal film including a laminated structure where a first metal film and a second metal film are alternately and repeatedly laminated, wherein the second metal film has a work function different from that of the first metal film and is different from the first metal film in material, and an oxidation resistance of the first metal film is greater than that of the second metal film.Type: GrantFiled: February 23, 2015Date of Patent: October 18, 2016Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Sadayoshi Horii, Arito Ogawa, Hideharu Itatani
-
Patent number: 9437704Abstract: Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes an insulating film disposed on a substrate; and a metal film disposed on the insulating film. The metal film includes a stacked structure of: a first metal film disposed on the insulating film to directly contact the insulating film; a second metal film disposed on the first metal film to directly contact the first metal film; and the first metal film disposed on the second metal film to directly contact the second metal film, the second metal film having a work function greater than 4.8 eV and being different from the first metal film in material, wherein an oxidation resistance of the first metal film is greater than that of the second metal film.Type: GrantFiled: February 23, 2015Date of Patent: September 6, 2016Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Sadayoshi Horii, Arito Ogawa, Hideharu Itatani
-
Publication number: 20160053373Abstract: A substrate processing apparatus, including: a processing chamber having a first and a second processing regions; a substrate mounting table rotatably installed in the processing chamber on which a substrate is mounted, and a rotation instrument configured to rotate the substrate mounting table such that the substrate passes through the first processing region and the second processing region in this order, at least one of the first and the second processing regions including: a gas supply part including a line-shaped opening portion extending in a radial direction of the substrate mounting table and configured to supply a gas from the opening portion into the region; and a gap holding member protruding from a ceiling of the processing chamber opposing the substrate, around the opening portion, toward the substrate such that a space on the substrate has a predetermined gap to serve as a passage of the supplied gas.Type: ApplicationFiled: August 14, 2015Publication date: February 25, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Tetsuaki INADA, Yuichi WADA, Mitsunori ISHISAKA, Mitsuhiro HIRANO, Sadayoshi HORII, Hideharu ITATANI, Satoshi TAKANO, Motonari TAKEBAYASHI
-
Publication number: 20150171180Abstract: Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes an insulating film disposed on a substrate; and a metal film disposed on the insulating film. The metal film includes a stacked structure of: a first metal film disposed on the insulating film to directly contact the insulating film; a second metal film disposed on the first metal film to directly contact the first metal film; and the first metal film disposed on the second metal film to directly contact the second metal film, the second metal film having a work function greater than 4.8 eV and being different from the first metal film in material, wherein an oxidation resistance of the first metal film is greater than that of the second metal film.Type: ApplicationFiled: February 23, 2015Publication date: June 18, 2015Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Sadayoshi HORII, Arito OGAWA, Hideharu ITATANI