Patents by Inventor Sadayoshi Horii

Sadayoshi Horii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11476112
    Abstract: Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: October 18, 2022
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Akinori Tanaka, Hideto Tateno, Sadayoshi Horii
  • Patent number: 11168396
    Abstract: There is provided a technique that includes a first act of modifying a film containing a silazane bond by heating a substrate, in which the film containing the silazane bond is formed over a surface of the substrate, to a first temperature and by supplying a first processing gas containing hydrogen peroxide to the substrate; and after the first act, a second act of modifying the film containing the silazane bond by heating the substrate to a second temperature higher than the first temperature and by supplying a second processing gas containing hydrogen peroxide to the substrate.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: November 9, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Toru Kakuda, Masahisa Okuno, Katsuhiko Yamamoto, Takuya Joda, Sadayoshi Horii
  • Patent number: 10985017
    Abstract: Described herein is a technique capable of improving a quality of a substrate processing performed using hydrogen peroxide. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and (b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: April 20, 2021
    Assignee: Kokusai Electric Corporation
    Inventors: Katsuhiko Yamamoto, Takuya Joda, Toru Kakuda, Sadayoshi Horii
  • Patent number: 10604839
    Abstract: A substrate processing apparatus, including: a processing chamber having a first and a second processing regions; a substrate mounting table rotatably installed in the processing chamber on which a substrate is mounted, and a rotation instrument configured to rotate the substrate mounting table such that the substrate passes through the first processing region and the second processing region in this order, at least one of the first and the second processing regions including: a gas supply part including a line-shaped opening portion extending in a radial direction of the substrate mounting table and configured to supply a gas from the opening portion into the region; and a gap holding member protruding from a ceiling of the processing chamber opposing the substrate, around the opening portion, toward the substrate such that a space on the substrate has a predetermined gap to serve as a passage of the supplied gas.
    Type: Grant
    Filed: August 14, 2015
    Date of Patent: March 31, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Tetsuaki Inada, Yuichi Wada, Mitsunori Ishisaka, Mitsuhiro Hirano, Sadayoshi Horii, Hideharu Itatani, Satoshi Takano, Motonari Takebayashi
  • Publication number: 20200002816
    Abstract: There is provided a technique that includes a first act of modifying a film containing a silazane bond by heating a substrate, in which the film containing the silazane bond is formed over a surface of the substrate, to a first temperature and by supplying a first processing gas containing hydrogen peroxide to the substrate; and after the first act, a second act of modifying the film containing the silazane bond by heating the substrate to a second temperature higher than the first temperature and by supplying a second processing gas containing hydrogen peroxide to the substrate.
    Type: Application
    Filed: September 13, 2019
    Publication date: January 2, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Toru KAKUDA, Masahisa OKUNO, Katsuhiko YAMAMOTO, Takuya JODA, Sadayoshi HORII
  • Publication number: 20190304778
    Abstract: Described herein is a technique capable of improving a quality of a substrate processing performed using hydrogen peroxide. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and (b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).
    Type: Application
    Filed: February 26, 2019
    Publication date: October 3, 2019
    Inventors: Katsuhiko YAMAMOTO, Takuya JODA, Toru KAKUDA, Sadayoshi HORII
  • Publication number: 20190003047
    Abstract: Described herein is a technique capable of preventing an occurrence of the metal contamination in a vaporizer for vaporizing a liquid source. According to the technique described herein, there is provided a vaporizer including: a vaporization vessel constituted by a quartz body; and an atomizer made of a fluorine resin and configured to atomize a liquid source using a carrier gas (atomization gas) and to supply the atomized liquid source into the vaporization vessel.
    Type: Application
    Filed: September 7, 2018
    Publication date: January 3, 2019
    Inventors: Hideto TATENO, Akinori TANAKA, Daisuke HARA, Masahisa OKUNO, Takuya JODA, Takashi TSUKAMOTO, Sadayoshi HORII, Toru KAKUDA
  • Publication number: 20180204742
    Abstract: A substrate processing apparatus, includes: a process chamber accommodating a substrate; a vaporizer vaporizing a liquid precursor to generate reaction gas and deliver a processing gas containing the reaction gas and a carrier gas, the vaporizer including: a vaporization vessel; and a heater heating the liquid precursor introduced into the vessel; a carrier gas flow rate controller controlling flow rate of the carrier gas supplied to the vaporizer; a liquid precursor flow rate controller controlling flow rate of the liquid precursor; a processing gas supply pipe introducing the processing gas delivered from the vaporizer into the process chamber; and a gas concentration sensor detecting a gas concentration of the reaction gas contained in the processing gas delivered from the vaporizer into the processing gas supply pipe.
    Type: Application
    Filed: March 13, 2018
    Publication date: July 19, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hideto TATENO, Daisuke HARA, Masahisa OKUNO, Takuya JODA, Takashi TSUKAMOTO, Akinori TANAKA, Toru KAKUDA, Sadayoshi HORII
  • Publication number: 20180204720
    Abstract: Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.
    Type: Application
    Filed: March 12, 2018
    Publication date: July 19, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Akinori TANAKA, Hideto TATENO, Sadayoshi HORII
  • Patent number: 9653301
    Abstract: Provided is a semiconductor device including a metal film which can be formed with lower costs but still manage to have a necessary work function and oxidation resistance. The semiconductor device includes an insulating film disposed on a substrate; and a metal film disposed on the insulating film. The metal film includes a stacked structure of: a first metal film disposed on the insulating film to directly contact the insulating film; a second metal film disposed on the first metal film to directly contact the first metal film; and the first metal film disposed on the second metal film to directly contact the second metal film, the second metal film having a work function greater than 4.8 eV and being different from the first metal film in material, wherein an oxidation resistance of the first metal film is greater than that of the second metal film.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: May 16, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Sadayoshi Horii, Arito Ogawa, Hideharu Itatani
  • Publication number: 20160343573
    Abstract: Provided is a semiconductor device including a metal film which can be formed with lower costs but still manage to have a necessary work function and oxidation resistance. The semiconductor device includes an insulating film disposed on a substrate; and a metal film disposed on the insulating film. The metal film includes a stacked structure of: a first metal film disposed on the insulating film to directly contact the insulating film; a second metal film disposed on the first metal film to directly contact the first metal film; and the first metal film disposed on the second metal film to directly contact the second metal film, the second metal film having a work function greater than 4.8 eV and being different from the first metal film in material, wherein an oxidation resistance of the first metal film is greater than that of the second metal film.
    Type: Application
    Filed: August 4, 2016
    Publication date: November 24, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Sadayoshi HORII, Arito OGAWA, Hideharu ITATANI
  • Patent number: 9472637
    Abstract: Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes: an insulating film disposed on a substrate; and a metal film disposed on the insulating film to directly contact the insulating film, the metal film including a laminated structure where a first metal film and a second metal film are alternately and repeatedly laminated, wherein the second metal film has a work function different from that of the first metal film and is different from the first metal film in material, and an oxidation resistance of the first metal film is greater than that of the second metal film.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: October 18, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Sadayoshi Horii, Arito Ogawa, Hideharu Itatani
  • Patent number: 9437704
    Abstract: Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes an insulating film disposed on a substrate; and a metal film disposed on the insulating film. The metal film includes a stacked structure of: a first metal film disposed on the insulating film to directly contact the insulating film; a second metal film disposed on the first metal film to directly contact the first metal film; and the first metal film disposed on the second metal film to directly contact the second metal film, the second metal film having a work function greater than 4.8 eV and being different from the first metal film in material, wherein an oxidation resistance of the first metal film is greater than that of the second metal film.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: September 6, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Sadayoshi Horii, Arito Ogawa, Hideharu Itatani
  • Publication number: 20160053373
    Abstract: A substrate processing apparatus, including: a processing chamber having a first and a second processing regions; a substrate mounting table rotatably installed in the processing chamber on which a substrate is mounted, and a rotation instrument configured to rotate the substrate mounting table such that the substrate passes through the first processing region and the second processing region in this order, at least one of the first and the second processing regions including: a gas supply part including a line-shaped opening portion extending in a radial direction of the substrate mounting table and configured to supply a gas from the opening portion into the region; and a gap holding member protruding from a ceiling of the processing chamber opposing the substrate, around the opening portion, toward the substrate such that a space on the substrate has a predetermined gap to serve as a passage of the supplied gas.
    Type: Application
    Filed: August 14, 2015
    Publication date: February 25, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Tetsuaki INADA, Yuichi WADA, Mitsunori ISHISAKA, Mitsuhiro HIRANO, Sadayoshi HORII, Hideharu ITATANI, Satoshi TAKANO, Motonari TAKEBAYASHI
  • Publication number: 20150171180
    Abstract: Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes an insulating film disposed on a substrate; and a metal film disposed on the insulating film. The metal film includes a stacked structure of: a first metal film disposed on the insulating film to directly contact the insulating film; a second metal film disposed on the first metal film to directly contact the first metal film; and the first metal film disposed on the second metal film to directly contact the second metal film, the second metal film having a work function greater than 4.8 eV and being different from the first metal film in material, wherein an oxidation resistance of the first metal film is greater than that of the second metal film.
    Type: Application
    Filed: February 23, 2015
    Publication date: June 18, 2015
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Sadayoshi HORII, Arito OGAWA, Hideharu ITATANI
  • Publication number: 20150171179
    Abstract: Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes: an insulating film disposed on a substrate; and a metal film disposed on the insulating film to directly contact the insulating film, the metal film including a laminated structure where a first metal film and a second metal film are alternately and repeatedly laminated, wherein the second metal film has a work function different from that of the first metal film and is different from the first metal film in material, and an oxidation resistance of the first metal film is greater than that of the second metal film.
    Type: Application
    Filed: February 23, 2015
    Publication date: June 18, 2015
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Sadayoshi HORII, Arito OGAWA, Hideharu ITATANI
  • Patent number: 8741731
    Abstract: A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming a first amorphous insulating film comprising a first element on a substrate; adding a second element different from the first element to the first amorphous insulating film so as to form a second amorphous insulating film on the substrate; and annealing the second amorphous insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second amorphous insulating film. The concentration of the second element added to the first amorphous insulating film is controlled according to the annealing temperature.
    Type: Grant
    Filed: December 13, 2012
    Date of Patent: June 3, 2014
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yuji Takebayashi, Hirohisa Yamazaki, Sadayoshi Horii, Hideharu Itatani, Arito Ogawa
  • Patent number: 8728935
    Abstract: A method of manufacturing a semiconductor device capable of minimally preventing the property deterioration caused by the oxidation of a metal film, and a substrate processing apparatus are provided.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: May 20, 2014
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Kazuhiro Harada, Hideharu Itatani, Sadayoshi Horii
  • Patent number: 8685866
    Abstract: A method of manufacturing a semiconductor device including alternately repeating a process of forming a first metal oxide film including a first metal element and a process of forming a second metal oxide film including a second metal element on a substrate accommodated in a processing chamber, so as to form a third metal oxide film including the first and second metal elements with a predetermined composition ratio on the substrate. One of the first and second metal elements of the third metal oxide film has a concentration higher than a concentration of the other, and one of the first and second metal oxide films including the higher-concentration metal element is formed in a chemical vapor deposition (CVD) mode or an atomic layer deposition (ALD) saturation mode, and the other of the first and second metal oxide films is formed in an ALD unsaturation mode.
    Type: Grant
    Filed: June 24, 2010
    Date of Patent: April 1, 2014
    Assignees: Hitachi Kokusai Electric, Inc., Renesas Electronics Corp.
    Inventors: Sadayoshi Horii, Atsushi Sano, Masahito Kitamura, Yoshitake Kato
  • Patent number: 8580671
    Abstract: A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminum, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminum, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
    Type: Grant
    Filed: May 1, 2012
    Date of Patent: November 12, 2013
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Sadayoshi Horii, Yoshinori Imai, Mika Karasawa